Abstract

A method for preparing bis(methylcyclopentadienyl)nickel, according to one embodiment of the present invention, does not require preparation of an anhydrous solvent, and uses a cheap and safe alkali metal hydroxide, and thus has excellent process stability. Furthermore, bis(methylcyclopentadienyl)nickel prepared by the method has excellent yield and purity. In addition, a method for manufacturing a nickel oxide thin film, according one embodiment of the present invention, exhibits an economic effect of reducing process time through an improved deposition rate, and a nickel oxide thin film manufactured thereby has excellent physical properties, for example, excellent resistance and transparency, and thus is suitable for application to a hole transport layer of a perovskite solar cell.

IPC Classes  ?

• C07F 17/02 - Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/40 - Oxides
• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• H10K 30/81 - Electrodes
• H10K 30/85 - Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
• H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
• H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Abstract

An etching gas and an etching method, the etching gas includes hydrogen gas; a halogen gas; a first gas; and a second gas, wherein the first gas includes a phosphorus atom, and the second gas includes a carbon atom and two or more halogen atoms that are different from each other.

IPC Classes  ?

• C09K 13/00 - Etching, surface-brightening or pickling compositions
• H01L 21/311 - Etching the insulating layers

Abstract

The present invention relates to a method for purifying 6FDA with high purity. According to the present invention, the use of activated carbon and phosphoric acid together in the purification process makes it possible to remove heavy metal ion impurities contained in 6FDA in a single process while maintaining an excellent yield, thereby enabling the production of high-quality and high-purity 6FDA.

IPC Classes  ?

• C07D 307/89 - Benzo [c] furansHydrogenated benzo [c] furans with two oxygen atoms directly attached in positions 1 and 3
• C07B 63/04 - Use of additives

Abstract

266) and hydrofluoric acid (HF), and a surface treatment method using same. The composition can be used for processing (for example, etching) of a substrate such as glass.

IPC Classes  ?

• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C09K 13/04 - Etching, surface-brightening or pickling compositions containing an inorganic acid
• C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• C09K 13/02 - Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide

Abstract

A composition for surface treatment includes fluorosilicic acid (H2SiF6) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.

IPC Classes  ?

• C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching

Abstract

The present invention relates to a silicon nitride film etching composition and a preparation method therefor, and the silicon nitride film etching composition of the present invention may comprise phosphoric acid, hydrogen fluoride, silicate ions and water. The silicon nitride film etching composition of the present invention can provide the excellent effects of excellent etch selectivity, which is maintained as ∞, a high silicon nitride film etching rate and post-etching particle generation suppression.

IPC Classes  ?

• C09K 13/06 - Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
• C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• H01L 21/311 - Etching the insulating layers
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

According to an embodiment of the present inventive concept, an electrolyte additive represented by the compounds of Chemical Formulas 1 to 4 may be provided. In addition, according to another embodiment of the present inventive concept, a method for preparing an electrolyte additive of the compounds of Chemical Formulas 1 to 4 may be provided, wherein the method for preparing the electrolyte additive includes reacting hexafluorophosphate and 2-monofluoromalonic acid, further adding an HF scavenger to the mixed solution produced by the reaction, and concentrating and drying the reaction solution obtained therefrom.

IPC Classes  ?

• H01M 10/0567 - Liquid materials characterised by the additives
• C07F 9/6574 - Esters of oxyacids of phosphorus
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• H01M 10/0569 - Liquid materials characterised by the solvents

Abstract

The present invention relates to a surface treatment method for the inside of a container for storing high-purity hydrogen fluoride, comprising: a cylinder pretreatment step for removing moisture inside a cylinder; and a fluorinated passive film formation step for forming a fluorinated passive film on the inner surface of the cylinder by means of anhydrous hydrofluoric acid. The present invention can provide: a surface treatment method which, even in the case of long-term storage of high-purity hydrogen fluoride, can minimize the amounts of impurity gases (hydrogen, oxygen, etc.) generated; and a container, surface-treated according to the method, for storing high-purity hydrogen fluoride.

IPC Classes  ?

• C23C 8/08 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
• C23C 8/02 - Pretreatment of the material to be coated
• F17C 1/10 - Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge with provision for protection against corrosion, e.g. due to gaseous acid

Abstract

According to one embodiment of the present invention, provided is an electrolyte additive which is a compound represented by chemical formulas 1-4. In addition, according to another embodiment of the present invention, provided is an electrolyte additive preparation method for preparing the compound of chemical formulas 1-4, and the electrolyte additive preparation method can comprise the steps of: reacting a hexafluorophosphate and 2-monofluoromalonic acid; further adding an HF scavenger to a mixture solution produced by the reaction; and concentrating and drying the obtained reaction solution.

IPC Classes  ?

• H01M 10/0567 - Liquid materials characterised by the additives
• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 4/587 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
• H01M 10/052 - Li-accumulators
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• C07F 9/6568 - Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom having phosphorus atoms, with or without nitrogen, oxygen, sulfur, selenium or tellurium atoms, as ring hetero atoms having phosphorus atoms as the only ring hetero atoms

Abstract

Provided are method for producing alkali metal hexafluorophosphate, alkali metal hexafluorophosphate powder, method for producing electrolyte concentrate comprising alkali metal hexafluorophosphate, and method for producing secondary battery. The method for preparing alkali metal hexafluorophosphate includes a step of obtaining an alkali metal hexafluorophosphate by reacting phosphorus pentafluoride with alkali metal fluoride in a haloformate solvent.

IPC Classes  ?

• H01M 10/0568 - Liquid materials characterised by the solutes
• H01M 10/0569 - Liquid materials characterised by the solvents

Abstract

Disclosed is a method of simultaneously preparing 1,1,1-trifluoro-2-chloropropene and 1,1,1,2-tetrafluoropropene, the method including i) a step of elevating a temperature of a reactor charged with a gas phase catalyst up to a reaction temperature; ii) a step of feeding 1,1,1-trifluoro-2,3-dichloropropane and 2-chloro-1,1,1,2-tetrafluoropropane into the reactor, the temperature of which has been elevated; iii) a step of performing dehydrochlorination while maintaining the temperature of the reactor; and iv) a step of performing washing and distillation after the dehydrochlorination. In accordance with the present disclosure, a high-efficient gas-phase process of continuously, simultaneously preparing 1,1,1-trifluoro-2-chloropropene and 1,1,1,2-tetrafluoropropene is provided.

IPC Classes  ?

• C07C 17/20 - Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms
• C07C 19/10 - Acyclic saturated compounds containing halogen atoms containing fluorine and chlorine
• B01J 23/06 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of zinc, cadmium or mercury
• B01D 3/14 - Fractional distillation

Abstract

3) as a fluid catalyst, thereby improving the reaction stability and readily adjusting the optimum conversion rate and selectivity.

IPC Classes  ?

• C07C 17/04 - Preparation of halogenated hydrocarbons by addition of halogens to unsaturated halogenated hydrocarbons
• C07C 19/08 - Acyclic saturated compounds containing halogen atoms containing fluorine
• B01J 19/20 - Stationary reactors having moving elements inside in the form of helices, e.g. screw reactors
• B01J 27/06 - HalogensCompounds thereof
• B01J 27/28 - Regeneration or reactivation
• B01J 8/10 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with moving particles moved by stirrers or by rotary drums or rotary receptacles
• B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes

Abstract

Disclosed herein is a method of preparing a perfluoroalkadiene. A dihaloperfluorocarbon used as a starting material is added dropwise to a nonpolar organic solvent, a metal powder and an organic metal compound. The dihaloperfluorocarbon is slowly added dropwise in a temperature range from 30° C. to 150° C. for a certain period of time. Moreover, the nonpolar organic solvent used may be benzene, toluene, xylene, etc., and the organic metal compound is used by being dissolved in ethyl ether or tetrahydrofuran at a concentration of 1 to 3M. The metal powder used may be Mg, Zn, Cd, etc.

IPC Classes  ?

• C07C 17/00 - Preparation of halogenated hydrocarbons
• C07C 21/18 - Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds containing fluorine

Abstract

8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.

IPC Classes  ?

• C07C 17/20 - Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms
• C09K 13/00 - Etching, surface-brightening or pickling compositions

Abstract

2 and HF, and then at 320-380° C. using HF gas. The fluorination catalyst prepared using the method of this invention can be effectively used to prepare pentafluoroethane at a high yield using a chloroethane compound.

IPC Classes  ?

• B01J 23/00 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group

Abstract

3 by gas-liquid phase reaction of fluorine and ammonia in molten ammonium acid fluoride (AAF) in a static reactor in which the reactants are conveyed primarily by thermal conduction or siphon. Optimally, the reactor contains one or more static mixing elements with little, if any, mechanical agitation. Reactant flow rate and reaction temperature are regulated by the rate of introduction of ammonia and cooling, as necessary The ratio of hydrogen fluoride (generated by the reaction) to ammonia in the reactor is significantly lower than taught in the prior art. This allows a lower reaction temperature. The present invention is an improved synthetic method that offers enhanced selectivity and higher yields, improved control of reaction kinetics, reduced operational and energy costs, and a greater margin of safety.

IPC Classes  ?

• C01B 21/083 - Compounds containing nitrogen and non-metals containing one or more halogen atoms
• C01B 7/19 - FluorineHydrogen fluoride

Abstract

2 mixture gas to produce FEC, thus a purification process is simple and it is possible to produce FEC at high conversion efficiency and selectivity.

IPC Classes  ?

• C07D 317/42 - Halogen atoms or nitro radicals