Abrégé

This application provides a chip, a dynamic vision sensor, and a method for outputting pixel information. The chip includes a pixel array and a processing circuit, and each pixel row in the pixel array includes at least two pixel groups. In the processing circuit, based on a change of a light intensity value of at least one pixel in a first pixel group, a first signal including row location information of the first pixel group in the pixel array is generated, and a second signal including column location information of a pixel row in which the first pixel group is located is generated. The first signal and the second signal are sent to a pixel output circuit, to enable the pixel output circuit to accurately output location information of the first pixel group whose light intensity value changes in the pixel array.

Classes IPC  ?

• H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
• H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs

Abrégé

This application provides a pixel of an image sensor and an image sensor. The pixel may include an optical-to-electrical conversion circuit and a composite measurement circuit. The optical-to-electrical conversion circuit may be configured to generate a first current based on incident light that is incident on the pixel. The composite measurement circuit is coupled to the optical-to-electrical conversion circuit. The pixel may have a first operating mode and a second operating mode. The composite measurement circuit may generate a first pulse signal based on the first current when the pixel operates in the first operating mode, where the first pulse signal represents the intensity information of the incident light. When the pixel operates in the second operating mode, the pixel receives a plurality of sampling signals, and generates a plurality of second pulse signals based on the first current and the plurality of sampling signals.

Classes IPC  ?

• H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
• H04N 23/667 - Changement de mode de fonctionnement de la caméra, p. ex. entre les modes photo et vidéo, sport et normal ou haute et basse résolutions
• H04N 25/768 - Capteurs adressés, p. ex. capteurs MOS ou CMOS pour le report et l’intégration [TDI]
• H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N

Abrégé

A gallium nitride-based laser (2000), comprising an active region (2100), an N-type layer (2200) and a P-type layer (2300), wherein the N-type layer (2200) is used for providing electrons to the active region (2100); the P-type layer (2300) is used for providing holes to the active region (2100); and the active region (2100) is used for realizing recombination of the holes and the electrons and emitting laser light. The laser (2000) further comprises a potential balance layer (2400), wherein the potential balance layer (2400) has a P-type doped structure, the potential balance layer (2400) is located on a P side of the active region (2100), the distance between the potential balance layer (2400) and the active region (2100) is less than or equal to 70 nm, and the potential balance layer (2400) is used for adjusting the position of a depletion region of the laser (2000), such that the depletion region of the laser (2000) coincides with the active region (2100).

Classes IPC  ?

• H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]

Abrégé

An SNN accelerator comprising: processing element array comprising multiple processing elements which are used for receiving an input pulse signal and weight information, performing weight accumulation on the input pulse signal within one time step to obtain a partial sum of the time step, and/or performing weight accumulation on the input pulse signals of multiple time steps to obtain the partial sums of the multiple time steps; a membrane potential update module connected to the processing element array and being used for receiving the partial sum of the processing element array and the membrane potential information of the previous time step, for obtaining the membrane potential information of the current time step on the basis of the partial sum of the processing element array and the membrane potential information of the previous time step, and for generating an output pulse signal. When the PE array performs computation on the convolutional layer of the SNN, a single-time-step processing mode is used, so that the weight can be fully multiplexed. When the PE array performs calculation on the fully connected layer of the SNN, a multiple-time-step processing mode is used, and the partial sum and accumulation of multiple time steps can be processed each time, so that the multiplex rate of the weight can be increased.

Classes IPC  ?

• G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques

Abrégé

A spin-orbit torque magnetoresistive random access memory and a method of operating the same. The memory includes memory cells. Each memory cell includes: an orbital Hall layer for generating an orbital polarized current under an action of an in-plane current; an alloy material layer including an alloy material having spin Hall angles with opposite polarities and for generating spin polarized currents in opposite spin directions under an action of the in-plane current flowing through the alloy material layer and the orbital polarized current; a magnetic tunnel junction, including a magnetic free layer, a tunneling insulation layer, a magnetic pinned layer, and an antiferromagnetic layer or artificial antiferromagnetic layer. A competing spin current effect is generated by the spin polarized currents in the opposite spin directions to induce a deterministic magnetization switching of a magnetic moment of the magnetic free layer, so as to store an information in the memory cell.

Classes IPC  ?

• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin

Abrégé

Provided in the present disclosure is a semiconductor laser. The semiconductor laser comprises an active region, a gain regulation and control region, a phase region, a grating region and an isolation region which are arranged side by side on the same substrate, wherein the gain regulation and control region uses the same structure and material as the active region, and is used for generating mutual photoelectric coupling effects with the active region so as to change a gain of the semiconductor laser.

Classes IPC  ?

• H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]

Abrégé

Provided are a high-aluminum component oxidation limiting semiconductor laser and a preparation method therefor, relating to the technical field of semiconductor lasers. The high-aluminum component oxidation limiting semiconductor laser sequentially comprises from bottom to top: an N-face metal electrode, an N-type GaAs substrate, an N-type limiting layer, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type limiting layer, a P-type high-aluminum component layer, a P-type contact layer, and a P-face metal electrode. The P-type high-aluminum component layer and the P-type contact layer are photoetched and etched to form a ridge structure. The P-type high-aluminum component layer is oxidized to form an oxidation limiting layer. The oxidation limiting layer is arranged between the upper surface of the P-type limiting layer and the lower surface of the P-type contact layer, and wraps the two sides of the ridge structure, so that a current injection channel formed below the ridge structure and the two sides of the ridge structure are electrically isolated.

Classes IPC  ?

• H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
• H01S 5/18 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

Provided is a procedure control method for a semiconductor process based on machine learning, which relates to the technical field of epitaxial semiconductor film growth. The method comprises the following steps: S1, acquiring current production condition parameters, and controlling a sample to grow under the production condition parameters; and S2, obtaining current growth data for the sample collected by an in-situ monitoring instrument, and predicting future growth quality corresponding to the current growth data by using a machine learning algorithm, wherein the in-situ monitoring instrument is a non-contact in-situ characterization instrument, and a current growth procedure does not need to be stopped to perform characterization; and S3, judging whether the future growth quality is less than a preset growth quality threshold value; if so, ending growth; otherwise, adjusting the production condition parameters by using a machine learning algorithm, obtaining updated production condition parameters, and repeating steps S1-S2 until the future growth quality is less than a preset growth quality threshold value.

Classes IPC  ?

• H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
• G06N 20/00 - Apprentissage automatique

Abrégé

The present disclosure provides a preparation method for a biological probe based on multi-color resonant cavity light-emitting diodes, comprising: bonding, on a substrate, a plurality of single-color resonant cavity light-emitting diodes having different light-emission wavelengths to form a biological probe precursor, bonding each single-color resonant cavity light-emitting diode comprising: forming a first bonding metal layer on the substrate; sequentially forming a first reflective layer and a second bonding metal layer on a sapphire epitaxial wafer; flip-chip mounting the sapphire epitaxial wafer, and bonding the first bonding metal layer and the second bonding metal layer to form a third bonding metal layer; etching the flip-chipped sapphire epitaxial wafer, and obtaining an epitaxial layer; forming an insulating layer on the epitaxial layer; forming an N electrode and a P electrode on the insulating layer, which are suitable for applying voltage to the epitaxial layer so as to generate a laser; and forming a second reflective layer on the insulating layer, the second reflective layer and the first reflective layer forming a resonant cavity for controlling the laser light emitting angle; sharpening a tip of the biological probe precursor, and obtaining a biological probe; and forming a biological encapsulation layer on the surface of the biological probe.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
• H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• A61N 5/06 - Thérapie par radiations utilisant un rayonnement lumineux

Abrégé

The present application provides a chip, a dynamic vision sensor and a method for outputting pixel information. The chip comprises a pixel array and a processing circuit, and each pixel row in the pixel array comprises at least two pixel groups. In the processing circuit, on the basis of a change in a light intensity value of at least one pixel of a first pixel group, a first signal comprising row position information of the first pixel group in the pixel array is generated, and a second signal comprising column position information of a pixel row where the first pixel group is located is generated. By sending the first signal and the second signal to a pixel output circuit, the pixel output circuit may accurately output the position information of the first pixel group having the change in the light intensity value in the pixel array.

Classes IPC  ?

• H04N 25/441 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en lisant partiellement une matrice de capteurs SSIS en lisant des pixels contigus dans des rangées ou des colonnes sélectionnées de la matrice, p. ex. par balayage entrelacé

Abrégé

The present application provides a pixel of an image sensor, and an image sensor, providing intensity information and time of flight information of incident light. The pixel comprises a photoelectric conversion circuit and a composite measurement circuit. The photoelectric conversion circuit may be configured to generate a first current on the basis of incident light incident on the pixel. The composite measurement circuit is coupled to the photoelectric conversion circuit. The pixel may have a first operating mode and a second operating mode. When the pixel works in the first operating mode, the composite measurement circuit can generate a first pulse signal on the basis of the first current, the first pulse signal representing intensity information of the incident light. When the pixel works in the second operating mode, a plurality of sampling signals are received, and a plurality of second pulse signals are generated on the basis of the first current and the plurality of sampling signals, the plurality of second pulse signals being used for representing a phase offset between the phase of the incident light and a set phase, and the phase offset being used for determining a distance between the pixel and a target object.

Classes IPC  ?

• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
• H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs

Abrégé

A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect includes: providing a substrate; and growing a germanium quantum well on the substrate. A silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well. The silicon atomic layer includes one or more monolayers.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/161 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée comprenant plusieurs des éléments prévus en
• H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux

Abrégé

Provided is a light transmitter, including: a substrate; a semiconductor refrigeration assembly arranged on the substrate; a light emitting assembly mounted on the semiconductor refrigeration assembly, so that the semiconductor refrigeration assembly cools the light emitting assembly, and the light emitting assembly is configured to generate a laser beam; a tube shell mounted on the substrate to package the semiconductor refrigeration assembly and the light emitting assembly; an optical fiber configured to output the laser beam generated by the light emitting assembly to an outside of the tube shell; and a transparent filling glue filled in a space between an inner wall of the tube shell and the substrate, and configured to guide the laser beam generated by the light emitting assembly to the optical fiber and transfer a heat generated by the light emitting assembly to the tube shell.

Classes IPC  ?

• H01S 5/024 - Dispositions pour la gestion thermique
• H01S 5/02251 - Découplage de lumière utilisant des fibres optiques
• H01S 5/02216 - SupportsBoîtiers caractérisés par la forme des boîtiers du type papillon, c.-à-d. avec les broches d’électrode s’étendant latéralement depuis le boîtier

Abrégé

Provided in the present disclosure is a polygonal microcavity chaotic laser, comprising a semiconductor microcavity (11), having a cross section of a regular polygon or of a regular polygon with arc edges, and used for forming total internal reflection of light; a hole (12), coaxial with the semiconductor microcavity (11) and arranged inside the semiconductor microcavity (11); an annular electrode window (13), located at the upper end of the semiconductor microcavity (11) and coaxial with the semiconductor microcavity (11); and a waveguide (14), in contact connection with the outer wall of the semiconductor microcavity (11) and used for directionally outputting a chaotic laser. Further provided in the present disclosure are a regulation and control method for the polygonal microcavity chaotic laser, and a high-speed random number generator using the polygonal microcavity chaotic laser. The laser has a simple structure and has an output chaotic laser with high power and a large bandwidth. The high-speed random number generator exhibits a high random number generation rate, and has a simple structure, a small size, and a stable system.

Classes IPC  ?

• H01S 5/10 - Structure ou forme du résonateur optique

Abrégé

The present invention provides a deep ultraviolet light modulation reflectance spectrometer, comprising: a laser pumping module at least comprising a first laser; a searchlight module sequentially comprising a wide-spectrum light source, an incident monochromator, and a searchlight chopper along an optical path direction; a vacuum sample cavity module sequentially comprising, along a pump light path direction, a first laser incident window, a pump light chopper, a lens set, and a sample to be measured, and sequentially comprising a searchlight incident window, a first planar reflector, a first parabolic reflector, said sample, a second parabolic reflector, a second planar reflector, and a reflected light emergent window along a searchlight path direction; and a signal acquisition module sequentially comprising an emergent monochromator, a detector, a lock-in amplifier, and a signal processing apparatus along the optical path direction, and used for acquiring and analyzing a reflected light signal. The light modulation reflectance spectrometer disclosed in the present invention is suitable for a deep ultraviolet band, and can be widely applied to the research of an electronic energy band structure of an ultra-wide forbidden band semiconductor material.

Classes IPC  ?

• G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
• G01N 21/64 - FluorescencePhosphorescence

Abrégé

A fabrication method for a semiconductor structure with a hole spin qubit includes: providing a substrate; growing a germanium quantum well on the substrate, in which the germanium quantum well is an inclined quantum well structure grown in a [110] direction, and the germanium quantum well is grown by a complementary metal oxide semiconductor process; and fabricating a two-dimensional gate-defined quantum dot in the germanium quantum well.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/165 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée comprenant plusieurs des éléments prévus en dans différentes régions semi-conductrices
• G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p. ex. couplage ou commande de qubit

Abrégé

The present disclosure provides a data simulation apparatus and method. The apparatus comprises: a programmable logic device, which is used for implementing at least one interface protocol so as to send and receive simulation data and test data according to the interface protocol, wherein the simulation data comprises first data and second data, and the transmission rate of the first data is smaller than that of the second data; at least one first interface, which is used for connecting the programmable logic device and at least one piece of first equipment to be tested so as to transmit the first data and the test data; and/or at least one second interface, which is used for connecting the programmable logic device and at least one piece of second equipment to be tested so as to transmit the second data and the test data. According to the data simulation apparatus provided by the present disclosure, simulation data communication between respective interfaces of an external large-scale and complex visual processing system, etc. may be implemented in a centralized and unified manner, thereby greatly increasing the test efficiency of the external system.

Classes IPC  ?

• G06F 11/36 - Prévention d'erreurs par analyse, par débogage ou par test de logiciel
• G01R 31/28 - Test de circuits électroniques, p. ex. à l'aide d'un traceur de signaux

Abrégé

An enhancement method for a hole linear Rashba spin-orbit coupling effect, relating to the technical field of semiconductors. The method comprises: one or more silicon atom layers are inserted into an interface on the basis of a traditional germanium quantum well structure, and one order of magnitude increase in hole linear Rashba spin splitting can be achieved. Further provided is a better solution for constructing the germanium quantum well by replacing silicon-germanium alloy barriers with superlattice barriers. In the solution, the hole linear Rashba effect can be continuously enhanced multiple times on the basis of an interface quantum well solution.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

The present application proposes a preparation method for a hole spin qubit and relates to the technical field of semiconductors. The method comprises the following two steps: preparing a tilted quantum well structure on the basis of a CMOS process, controlling the tilt angle so as to achieve growth of a [110] direction quantum well, the structure of the quantum well being a P-type doped germanium quantum well; and, on the basis of electric dipole spin resonance (EDSR) technology, preparing a two-dimensional gate-controlled quantum dot in the quantum well structure so as to achieve a high-quality hole-spin qubit.

Classes IPC  ?

• H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage

Abrégé

The present application relates to the technical field of optoelectronic display, and provides a MicroLED three-primary-color light-emitting structure and a manufacturing method therefor. The light-emitting structure comprises: a display substrate; a substrate-free high-temperature polycrystalline silicon-thin film transistor structure located on the display substrate; a substrate-free red light OLED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; a substrate-free green light LED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; and a substrate-free blue light LED structure located on the display substrate, and connected to the substrate-free high-temperature polycrystalline silicon-thin film transistor structure. According to the MicroLED three-primary-color light-emitting structure disclosed by the present application, energy consumption can be reduced; an AlGaInP red light LED structure is replaced with a substrate-free red light OLED structure, and thus, the light-emitting efficiency can be improved; the substrate-free high-temperature polycrystalline silicon-thin film transistor structure is used for driving, and thus, the carrier mobility can be improved.

Classes IPC  ?

• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
• H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
• H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 51/56 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives

Abrégé

A method and a system for optimizing problem-solving based on probabilistic bit circuits are provided. The method includes: performing a modeling transformation on an objective problem to obtain a corresponding Hamiltonian relationship; obtaining a column Hamiltonian of said probabilistic bit circuit based on said Hamiltonian relationship; and performing parallel annealing iterations on multicolumn Hamiltonian based on row-flipping operations on said probabilistic bit circuits to obtain an updated probabilistic bit configuration, so as to achieve optimization of said problem.

Classes IPC  ?

• G06N 7/00 - Agencements informatiques fondés sur des modèles mathématiques spécifiques

Abrégé

Provided are a function switchable random access memory, including: two electromagnetic portions configured to connect a current; a magnetic recording portion between the two electromagnetic portions and including a spin-orbit coupling layer and a magnetic tunnel junction; a pinning region between each of the electromagnetic portions and the magnetic recording portion; a cut-off region on a side of each of the electromagnetic portions opposite to the pinning region, the spin-orbit coupling layer is configured to generate a spin current under an action of the current; the two electromagnetic portions is configured to generate two magnetic domains with magnetization pointing in opposite directions under an action of the spin current; the magnetic tunnel junction is configured to generate a magnetic domain wall based on the two opposite magnetic domains and is configured to drive the magnetic domain wall to reciprocate under the action of the spin current.

Classes IPC  ?

• G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• G11C 11/18 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des dispositifs à effet Hall
• H10N 50/85 - Matériaux de la région active
• H10N 52/00 - Dispositifs à effet Hall

Abrégé

A photonic chip and a preparation method thereof are provided. The chip includes a lithium niobate film modulator array, a first optical coupling array, and a silica waveguide wavelength-division multiplexer, and the lithium niobate film modulator array includes one or more lithium niobate film modulators and is used to modulate an optical signal; the first optical coupling array includes one or more first optical coupling structures, and the first optical coupling structure has one end connected to a corresponding lithium niobate thin film modulator and the other end connected to the silica waveguide wavelength-division multiplexer so as to transmit the modulated optical signal to the silica waveguide wavelength-division multiplexer; and the silica waveguide wavelength-division multiplexer is used to perform wavelength-division multiplexing on the modulated optical signal.

Classes IPC  ?

• G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré

Abrégé

A tunable external cavity laser with dual gain chips, including: a polarization beam splitter having a beam splitting surface arranged at an angle of 45° with respect to a first direction and a second direction perpendicular to the first direction; a first gain chip arranged in the first direction; a second gain chip arranged in the second direction; a feedback cavity arranged in the first direction, wherein the feedback cavity and the first gain chip are respectively arranged on two opposite sides of the polarization beam splitter, and the feedback cavity includes at least one independent Fabry-Perot etalon, at least one air gap Fabry-Perot cavity and a mirror that are arranged in the first direction. The polarization beam splitter and the two gain chips cooperate to share the feedback cavity, so that a wavelength and a phase may be adjusted, and a larger tuning range may be obtained.

Classes IPC  ?

• H01S 3/106 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande de dispositifs placés dans la cavité
• H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
• H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation

Abrégé

Disclosed is a microwave photonic Ising machine, including: a closed loop including a phase and electro-optical conversion module and a storage, correlation and photoelectric conversion module connected in turn; a laser light source configured to generate and input an optical signal to the phase and electro-optical conversion module; and a microwave pulse local oscillator source configured to generate and input a microwave pulse signal to the phase and electro-optical conversion module. The phase and electro-optical conversion module is configured to modulate the microwave pulse signal, the optical signal, and a phase-specific two-phase microwave pulse spin electrical signal input from the storage, correlation and photoelectric conversion module to obtain and input a phase-specific two-phase microwave pulse spin optical signal to the storage, correlation and photoelectric conversion module for storage and correlation. The phase-specific two-phase microwave pulse spin electrical signal corresponds to a minimum gain state of the microwave photonic Ising machine.

Classes IPC  ?

• H04B 10/70 - Communications quantiques photoniques
• G06N 10/00 - Informatique quantique, c.-à-d. traitement de l’information fondé sur des phénomènes de mécanique quantique
• H04B 10/548 - Modulation de phase ou de fréquence

Abrégé

The present disclosure provides a tunable broadband random optoelectronic oscillator, including: a laser light source configured to generate continuous laser light; a positive feedback loop formed by an intensity modulator, an optical circulator, an optical filter, an optical amplifier, a photodetector, an electric filter and an electric amplifier connected in sequence, wherein the positive feedback loop is configured to receive the continuous laser light to generate a microwave signal and achieve an optic-electro/electro-optic conversion; a Raman laser configured to generate Raman pump light; a wavelength division multiplexer having a first input terminal connected to the Raman laser and a second input terminal connected to the optical circulator; and a dispersion compensation fiber connected to an output terminal of the wavelength division multiplexer; wherein forward transmission laser light passing through the optical circulator and the Raman pump light are coupled into the dispersion compensation fiber through the wavelength division multiplexer.

Classes IPC  ?

• H01S 3/30 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p. ex. l'effet Brillouin ou Raman stimulé
• H01S 3/067 - Lasers à fibre optique
• H01S 3/13 - Stabilisation de paramètres de sortie de laser, p. ex. fréquence ou amplitude
• H01S 3/16 - Matériaux solides
• H04J 14/02 - Systèmes multiplex à division de longueur d'onde
• H01S 3/094 - Procédés ou appareils pour l'excitation, p. ex. pompage utilisant le pompage optique par de la lumière cohérente
• H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet

Abrégé

A mixer-based microwave signal generation device is provided, and the mixer-based microwave signal generation device includes a microwave local oscillator source, a mixer, a first filter, a laser, an electro-optic modulator, an optical signal delayer, a photodetector, a second filter, an amplifier and a passive power divider.

Classes IPC  ?

• H01S 1/00 - Masers, c.-à-d. dispositifs utilisant l’émission stimulée de rayonnement électromagnétique dans la gamme des micro-ondes
• G01S 7/32 - Récepteurs mettant en forme des signaux échos pulsésRécepteurs formant des signaux non pulsés à partir de signaux échos pulsés

Abrégé

A coherence-adjustable semiconductor laser device and the use thereof. The semiconductor laser device comprises: a deformation resonant cavity, which comprises a first concentric cavity (101), a connection cavity (103) and a second concentric cavity (102); a few-mode electrode injection region (109), which is arranged on an upper surface of the deformation resonant cavity and is used for generating a high-coherence laser; multi-mode electrode injection regions (110, 111), which are arranged in a region, external to the few-mode electrode injection region (109), of the upper surface of the deformation resonant cavity and are used for generating low-coherence lasers; an isolation layer (105), which is arranged on a side wall of the deformation resonant cavity; a first metal layer (106), which is arranged on the isolation layer (105); a second metal layer (107), which is arranged on the first metal layer (106); and a third metal layer (108), which is arranged on the second metal layer (107). According to the coherence-adjustable semiconductor laser device, patterned electrodes are introduced to the upper surface of the cavity and are injected into separate regions, and the magnitudes of currents injected into different electrode regions are different, so that the laser device can achieve coherence adjustability.

Classes IPC  ?

• H01S 5/10 - Structure ou forme du résonateur optique

Abrégé

An optical coupling structure, an optical coupling system and a method for preparing the optical coupling structure are provided. The method includes: step S101: preparing a base substrate; step S102: forming a lithium niobate optical waveguide on the base substrate; step S103: forming a silicon dioxide core layer enclosing the lithium niobate optical waveguide on peripheral walls of the lithium niobate optical waveguide; step S104: forming a silicon dioxide cladding layer enclosing the silicon dioxide core layer on peripheral walls of the silicon dioxide core layer. The optical coupling structure alleviates a technical problem of low coupling efficiency between the lithium niobate optical waveguide and the single-mode optical fiber in the related art, and achieves a technical effect of improving the coupling efficiency between the lithium niobate optical waveguide and the single-mode optical fiber.

Classes IPC  ?

• G02B 6/30 - Moyens de couplage optique pour usage entre fibre et dispositif à couche mince
• G02B 6/136 - Circuits optiques intégrés caractérisés par le procédé de fabrication par gravure
• G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
• G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
• F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
• G02B 6/34 - Moyens de couplage optique utilisant des prismes ou des réseaux

Abrégé

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

Classes IPC  ?

• B01J 27/24 - Composés de l'azote
• H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
• H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
• H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
• C01B 3/04 - Production d'hydrogène ou de mélanges gazeux contenant de l'hydrogène par décomposition de composés inorganiques, p. ex. de l'ammoniac
• C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
• C30B 29/40 - Composés AIII BV
• C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p. ex. borures, carbures, nitrures
• C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
• C25D 7/12 - Semi-conducteurs
• B01J 23/52 - Or
• B01J 23/50 - Argent
• B01J 21/02 - Bore ou aluminiumLeurs oxydes ou hydroxydes
• B01J 35/00 - Catalyseurs caractérisés par leur forme ou leurs propriétés physiques, en général
• B01J 37/02 - Imprégnation, revêtement ou précipitation
• B01J 37/34 - Irradiation ou application d'énergie électrique, magnétique ou ondulatoire, p. ex. d'ondes ultrasonores

Abrégé

An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.

Classes IPC  ?

• H01S 5/00 - Lasers à semi-conducteurs
• H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
• H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
• H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
• H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
• H01S 5/042 - Excitation électrique
• H01S 5/16 - Lasers du type à fenêtre, c.-à-d. avec une région en un matériau non absorbant entre la région active et la surface réfléchissante
• H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs

Abrégé

A broadband tuning system includes a first chip and a second chip. The first chip includes a first light amplification region, a first forward grating region and a first backward grating region that are sequentially arranged in a first direction. The first light amplification region is configured to amplify a first light source and to turn on or turn off the first light source, and the first forward grating region and the first backward grating region are configured to tune the first light source. The second chip includes a second light amplification region, a second forward grating region and a second backward grating region that are sequentially arranged in a second direction. The second light amplification region is configured to amplify a second light source and to turn on or turn off the second light source, and the second forward grating region and the second backward grating region are configured to tune the second light source.

Classes IPC  ?

• H01S 5/068 - Stabilisation des paramètres de sortie du laser
• H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
• H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
• H01S 5/0625 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes dans des lasers à plusieurs sections
• H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]
• H01S 5/00 - Lasers à semi-conducteurs

Abrégé

Provided are a GaN-based normally-off high-electron-mobility transistor and a preparation method therefor. The method comprises: S1, sequentially preparing, on a substrate (10), a nucleation layer (11), a buffer layer (12) and a first high-resistance GaN layer (13); S2, preparing a patterned dielectric layer (20) on the first high-resistance GaN layer (13); S3, epitaxially growing a ridge GaN layer (30) in a transverse direction on the basis of the patterned dielectric layer (20), and then removing the patterned dielectric layer (20) to form a ridge GaN template, wherein sidewalls of the ridge GaN layer (30) are aa crystal faces or bb crystal faces; and S4, epitaxially growing a ridge channel layer (31) and a ridge barrier layer (32) sequentially on the basis of the ridge GaN template, wherein the thickness of the sidewall of the ridge channel layer (31) and the thickness of the sidewall of the ridge barrier layer (32) are both less than the thickness of a platform. The transistor prepared using the method has no etching loss and injection damage in a channel region so as to effectively prevent the influence of etching damage on the device performance, and has a high threshold voltage, a high saturation current and a low on-resistance.

Classes IPC  ?

• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• H01L 21/335 - Transistors à effet de champ

Abrégé

An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Classes IPC  ?

• H01S 3/11 - Blocage de modesCommutation-QAutres techniques d'impulsions géantes, p. ex. vidange de cavité
• H01S 3/117 - Commutation-Q utilisant des dispositifs acousto-optiques dans la cavité

Abrégé

A laser cleaning method and device for improving uniformity of a laser cleaning surface are provided. The laser cleaning method includes: applying a peaked-top sine wave signal to a motor; controlling a galvanometer to swing in a reciprocated manner by the motor; shaping a laser beam emitted by a laser to a linear beam by the reciprocated swing of the galvanometer; and performing laser cleaning using the shaped linear beam.

Classes IPC  ?

• B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
• B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
• B23K 26/073 - Détermination de la configuration du spot laser
• B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples

Abrégé

Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valve may comprise two or more magnetic layers stacked in sequence, wherein the spin valve further comprises at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers.

Classes IPC  ?

• H01L 43/02 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails
• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 43/10 - Emploi de matériaux spécifiés

Abrégé

Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valves may comprise two or more magnetic layers stacked in sequence, wherein any two adjacent magnetic layers among the two or more magnetic layers have different coercive forces, and at least one of the any two adjacent magnetic layers is a van der Waals magnetic layer, wherein the van der Waals magnetic layer refers to a magnetic layer made of a van der Waals magnetic material.

Classes IPC  ?

• G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
• B82Y 25/00 - Nanomagnétisme, p. ex. magnéto-impédance, magnétorésistance anisotropique, magnétorésistance géante ou magnétorésistance à effet tunnel
• H01L 43/10 - Emploi de matériaux spécifiés

Abrégé

A laser cleaning system including a laser source, an energy-transferring optical fiber, a laser cleaning head, a coreless motor, a connection lens barrel, and a mirror.

Classes IPC  ?

• B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
• B08B 9/051 - Nettoyage des surfaces intérieuresÉlimination des bouchons utilisant des dispositifs de nettoyage introduits dans et déplacés le long des tubes les dispositifs de nettoyage comportant des moyens autopropulseurs pour se déplacer dans les tubes les dispositifs de nettoyage comportant des moteurs pour actionner les outils de nettoyage
• B08B 13/00 - Accessoires ou parties constitutives, d'utilisation générale, des machines ou appareils de nettoyage
• B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
• H01S 3/02 - Détails de structure

Abrégé

A Fourier domain mode-locked optoelectronic oscillator includes a laser light source, a phase modulator, an optical notch filter, a photodetector, an electrical amplifier and a power divider; wherein the laser light source, the phase modulator, the optical notch filter and the photodetector together form a swept microwave photonic filter. The passband of the swept microwave photonic filter is determined by the difference in wavelength corresponding to the laser light source and the notch positions of the optical notch filter. In the present disclosure, the laser light source, the phase modulator, the optical notch filter, and the photodetector are configured to form a fast swept microwave photonic filter, the sweeping of a passband of the microwave photonic filter is realized by the sweeping of the laser light source or the optical notch filter, and the change in the filter's passband is matched with the latency for delivering a signal in the optoelectronic oscillator loop for one trip. As such, Fourier domain mode locking is realized, and a broadband adjustable chirped microwave signal can be output.

Classes IPC  ?

• H03B 17/00 - Production d'oscillations au moyen d'une source de rayonnement et d'un détecteur

Abrégé

A frequency spectrum detection system including: a frequency-scan light source, a phase modulator, an optical filter, an optical fiber, a photodetector, a power divider, an electric amplifier, a combiner, an electric filter, and an oscilloscope. The frequency-scan light source, the phase modulator, the optical filter, the photodetector, and the electric amplifier form a ring-shaped optoelectronic oscillator resonant cavity, which is configured to generate a frequency-scan signal. The combiner is configured to receive a signal to be measured. The phase modulator is configured to modulate the combined electrical signal onto a frequency-scan optical signal. The optical filter is configured to selectively attenuate or amplify one sideband of double sidebands of the double-sideband phase-modulated optical signal. The photodetector is configured to detect a signal filtered by the optical filter.

Classes IPC  ?

• G01R 23/165 - Analyse de spectreAnalyse de Fourier en utilisant des filtres
• G01R 23/17 - Analyse de spectreAnalyse de Fourier avec des dispositifs optiques auxiliaires

Abrégé

A laser light source for laser display, relating to the fields of semiconductor lasers and laser display technology and imaging technology. The laser light source comprises: a first optical resonant cavity (101), a second optical resonant cavity (102), and a third optical resonant cavity (103). The first optical resonant cavity (101) and the third optical resonant cavity (103) are circular optical resonant cavities having openings; the second optical resonant cavity (102) is an FP optical resonant cavity, an FP optical resonant cavity having protruding sidewalls, an FP optical resonant cavity having an inclined cavity, or an FP optical resonant cavity having horizontally symmetrical horn-shaped ends; and the first optical resonant cavity (101) and the third optical resonant cavity (103) are respectively located on the left and right sides of the second optical resonant cavity (102). The laser light source can achieve chaotic output of lasers having different wavelength ranges by changing the parameters of the circular structures of the first optical cavity (101) and the third optical cavity (103) as well as the parameters of the second optical cavity (102), and the laser at the light exit surface can be highly directive.

Classes IPC  ?

• H01S 5/10 - Structure ou forme du résonateur optique
• H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
• H01S 5/042 - Excitation électrique

Abrégé

A photonic chip and a preparation method therefor. The chip comprises a lithium niobate film modulator array (1), a first optical coupling array (2), and a silica waveguide wavelength division multiplexer (3), wherein the lithium niobate film modulator array (1) is composed of one or more lithium niobate film modulators and used for modulating light signals; the first optical coupling array (2) is composed of one or more first optical coupling structures, one end of each first optical coupling structure is connected to the corresponding lithium niobate film modulator, and the other end of the first optical coupling structure is connected to the silica waveguide wavelength division multiplexer (3) to transfer the modulated light signals to the silica waveguide wavelength division multiplexer (3); the silica waveguide wavelength division multiplexer (3) is used for carrying out wavelength division multiplexing on the modulated light signals. Single chip integration of on-chip lithium niobate film modulators and on-chip wavelength division multiplexing structures is achieved, and a device integration level is improved.

Classes IPC  ?

• G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
• G02B 6/122 - Éléments optiques de base, p. ex. voies de guidage de la lumière

Abrégé

A laser having an output silicon waveguide comprises: a group III-V active structure used to form a light source of a laser, the group III-V active structure comprising a tunnel junction layer (4, 5) used to form a reverse tunneling current channel; an N-type substrate (2) provided at an upper surface of the tunnel junction layer (4, 5); a P-type layer (6, 7, 8) provided at a lower surface of the tunnel junction layer (4, 5); a quantum well active layer (9) provided at a lower surface of the P-type layer (6, 7, 8); an N-type layer (10, 11, 12) provided at a lower surface of the quantum well active layer (9); and a silicon waveguide structure (18) provided under the group III-V active structure and used to form an optical resonant cavity and a laser output waveguide together with the group III-V active structure.

Classes IPC  ?

• H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
• H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs

Abrégé

Embodiments of the present disclosure disclose an optoelectronic oscillator including an optical chip and a microwave chip. The optical chip is implemented by fabricating different optoelectronic devices on an integrated optical substrate, comprising: a laser assembly; a mode selection device coupled to the laser assembly, and configured to receive the laser and perform mode selection; an optical delay module coupled to the mode selection device; and a detector coupled to the optical delay module. The microwave chip is a microwave integrated circuit formed by fabricating microwave elements on a semiconductor substrate, comprising: a microwave processing circuit configured to receive microwave signal and perform signal processing; a coupler coupled to the microwave processing circuit, and configured to provide a part of the microwave signal to a phase shifter and output the other part thereof; and a phase shifter configured to feed the phase-shifted microwave signal to the laser assembly.

Classes IPC  ?

• H03B 17/00 - Production d'oscillations au moyen d'une source de rayonnement et d'un détecteur
• H01P 1/20 - Sélecteurs de fréquence, p. ex. filtres
• H01S 5/00 - Lasers à semi-conducteurs
• H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
• H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
• H03F 3/189 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence

Abrégé

An integrated Fourier domain mode-locked optoelectronic oscillator and its application and a communication system are provided, which relates to the technical field of microwave photonics. The integrated Fourier domain mode-locked optoelectronic oscillator includes an optoelectronic chip and an electronic chip. The optoelectronic chip includes a laser, a modulator, an optical notch filter, and a photodetector coupled via an optical waveguide. The electronic chip includes an electrical amplifier and a power splitter coupled via a coplanar microwave waveguide. The volume, weight and power consumption of the Fourier domain mode-locked optoelectronic oscillator is greatly reduced by integrating all the devices on the chip. A tunable sweeping microwave signal output is realized, and the sweeping speed of the output signal is increased. The integrated Fourier domain mode-locked optoelectronic oscillator can be used in radars and communication systems.

Classes IPC  ?

• H01S 3/11 - Blocage de modesCommutation-QAutres techniques d'impulsions géantes, p. ex. vidange de cavité
• G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
• H01S 3/067 - Lasers à fibre optique
• H01S 3/30 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p. ex. l'effet Brillouin ou Raman stimulé

Abrégé

The present disclosure provides a method for forming a pattern on a lateral epitaxial thin film by self-alignment, comprising: preparing a patterned substrate; preparing, on the patterned substrate, a surface-merged lateral epitaxial thin film by means of laterally epitaxially merged growth; and performing exposure treatment on the back of the patterned substrate, and forming a pattern on the lateral epitaxial thin film by self-alignment.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
• H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques

Abrégé

An on-chip integrated semiconductor laser structure and a manufacturing method thereof. The structure comprises: an epitaxial structure consisting of the following components sequentially deposited at a substrate (1): a first n-contact layer (2), a first n-confinement layer (3), a first active region (4), a first p-confinement layer (5), a first p-contact layer (6), an isolation layer (7), a second n-contact layer (8), a second n-confinement layer (9), a second active region (10), a second p-confinement layer (11) and a second p-contact layer (12); a waveguide structure comprising a waveguide structure (14) of a first laser and a waveguide structure (13) of a second laser; gratings (15, 16) provided at two sides of the waveguide structure (14) of the first laser and the waveguide structure (13) of the second laser to realize laser mode selection; and current injection windows (17, 18, 19, 20). In the invention, epitaxial materials of semiconductor lasers having different wavebands are grown at the same epitaxial layer, thereby realizing on-chip integration of lasers having different wavelengths, and emission of laser light having different wavelengths from the same laser device.

Classes IPC  ?

• H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
• H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique

Abrégé

A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer. The invention generates ferroelectric polarization by applying a voltage to both ends of the ferroelectric layer, thereby generating a non-uniform spin-orbit coupling effect, which can modulate the direction in which the current induces the magnetic switching of the magnetic film.

Classes IPC  ?

• G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
• G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
• H01L 27/22 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun utilisant des effets de champ magnétique analogues
• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 43/10 - Emploi de matériaux spécifiés
• H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives
• H03K 19/18 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs galvanomagnétiques, p. ex. des dispositifs à effet Hall

Abrégé

Provided are an optical coupling structure, an optical coupling system, and a method for preparing the optical coupling structure. The method comprises: step S101: preparing a substrate; step S102: forming a lithium niobate optical waveguide on the substrate; step S103: forming a silicon dioxide core layer covering the lithium niobate optical waveguide on a peripheral wall of the lithium niobate optical waveguide; and step S104: forming a silicon dioxide cladding layer covering the silicon dioxide core layer on a peripheral wall of the silicon dioxide core layer. The present optical coupling structure alleviates the technical problem of low coupling efficiency between a lithium niobate optical waveguide and a single-mode fiber in the prior art, and achieves the technical effect of improving the coupling efficiency between the lithium niobate optical waveguide and the single-mode fiber.

Classes IPC  ?

• G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
• G02B 6/124 - Lentilles géodésiques ou réseaux intégrés
• G02B 6/136 - Circuits optiques intégrés caractérisés par le procédé de fabrication par gravure

Abrégé

A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on the transparent electrode in the recess of the p-electrode.

Classes IPC  ?

• H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
• H01S 5/042 - Excitation électrique
• H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
• H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs

Abrégé

Provided is a tunnel junction photonic crystal laser, comprising: a substrate; and a plurality of laminated structures successively formed on the substrate, wherein each of the laminated structures comprises an active layer and a photonic crystal layer, and a tunnel junction is formed between adjacent laminated structures. According to the tunnel junction photonic crystal laser of the present disclosure, the peak power is improved, the detection range of the laser is increased, the laser output with a narrow vertical far-field divergence angle at the peak power is realized, and the tunnel junction photonic crystal laser has broad application prospects in the fields of laser ranging, laser imaging, laser radar, etc.

Classes IPC  ?

• H01S 5/00 - Lasers à semi-conducteurs
• H01S 5/30 - Structure ou forme de la région activeMatériaux pour la région active
• H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
• H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures

Abrégé

An LED of vertical pyramid structure and a manufacturing method therefor, relating to the technical field of semiconductors. The LED of a vertical pyramid structure comprises: a substrate and an epitaxial layer located on the substrate and comprising a dielectric layer and a pyramid structure. The dielectric layer is deposited on the substrate, and has a patterning mask of a periodic pore structure opened to the substrate. The pyramid structure is formed by filling the pore structure and continuously growing. According to the present invention, a GaN-based vertical pyramid LED is performed selective area epitaxial growth by perforating a novel substrate. A technical route of a simple vertical pyramid structure without growing a nitride thin film layer, substrate peeling, luminescent layer transfer, and a secondary bond significantly improves the production efficiency and reduces production costs.

Classes IPC  ?

• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13′), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18) formed on the mesa of the n-type GaN layer (13); a p-type electrode (19) formed on a periphery of an upper surface of the sidewall passivation layer (20); a top dielectric DBR layer (17) formed on the transparent conductive layer (16) and the p-type electrode (19).

Classes IPC  ?

• H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
• H01L 31/0216 - Revêtements
• H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV

Abrégé

Provided are a semiconductor material based on a metal nanowire and a porous nitride, and a preparation method therefor. The semiconductor material comprises: a substrate; a buffer layer, formed on the substrate; and a composite material layer, formed on the buffer layer and comprising: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

Classes IPC  ?

• H01L 31/0304 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

Disclosed are a direct bandgap light-emitting silicon-based material for realizing compatibility with a CMOS process, and a preparation method therefor, the method comprising the following steps: and a preparation method therefor, and on-chip light-emitting device preparing a silicon-based material, wherein the silicon-based material is a germanium material or a silicon-germanium alloy; and filling some lattice gap positions in the silicon-based material with inert gas atoms and/or atoms with a small atomic number to achieve lattice volume expansion, thereby achieving the transformation of the energy band structure thereof from indirect band gap to direct band gap, in order to obtain a direct bandgap light-emitting silicon-based material. In addition, also provided is a light-emitting silicon-based device. The preparation method is compatible with CMOS integrated circuit processes, and realizes direct bandgap light-emitting of germanium and silicon germanium alloy materials, and the light-emitting efficiency thereof is comparable to that of Group III-V direct bandgap materials such as InP and GaAs, thus offering a completely new solution for on-chip light sources required for silicon- or germanium-based optoelectronic integration technologies.

Classes IPC  ?

• H01L 33/26 - Matériaux de la région électroluminescente

Abrégé

Provided are an infrared imaging device having a flexible spherical structure, a fabrication method for said device, and a simulation infrared spherical camera. The infrared imaging device having a flexible spherical structure comprises: a substrate and an infrared detector array located on an inner surface of the substrate, wherein the substrate is a flexible spherical substrate. The infrared imaging device having a flexible spherical structure, the fabrication method for said device, and the simulation infrared spherical camera of the present disclosure allow for resilience to repeated bending and can be applied to the fields of wearable devices, bionic tissue, human-computer interaction and the like. The biological integration capability of infrared photoelectric imaging devices is substantially improved, the fabrication process is more mature, and the processing cost is low.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images
• H04N 5/33 - Transformation des rayonnements infrarouges

Abrégé

A curved conical photonic crystal laser device, an array, and an array light source group. The curved conical photonic crystal laser device comprises a ridge waveguide part (3), a bent waveguide part (4) and a conical light amplification part (5) that are sequentially connected. The ridge waveguide part (3) is a straight waveguide, the bent waveguide part (4) has a radian, and the conical light amplification part (5) is gradually expanded in the light output direction. By introducing a photonic crystal structure and adjusting an intra-cavity mode, narrow vertical and horizontal divergence angles are achieved, and an optical collimation and compression system is simplified; by properly designing the waveguide structure, waveguide modes of different parts are matched, and multi-angle wide-range laser output can be achieved in the condition that a machine table does not need to be rotated; in addition, the range and precision of laser irradiation and scanning are improved, the angular resolution is adjustable and low, the structure is compact, the stability is high, costs are low, and the laser device has wide application prospects in the fields of laser ranging, laser imaging, laser radars and the like.

Classes IPC  ?

• H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
• H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
• H01S 5/42 - Réseaux de lasers à émission de surface

Abrégé

A monochromatic light wavelength recognizing device, system and method. The monochromatic light wavelength recognition device comprises: an electrically conductive substrate (10); an insulation layer (20) formed on the electrically conductive substrate (10); and a thermoelectronic emission layer (30), made of a metallic material and formed on the insulation layer (20); the Fermi level of the conductivity band of the insulation layer (20) is higher than that of the metallic material of the thermoelectronic emission layer (30). The present invention provides, on the basis of new thermoelectron energy distribution principles, an unprecedented monochromatic light wavelength recognition device structure; said device structure is a thermoelectronic emission layer (30) - insulation layer (20) - electrically conductive substrate (10) (EIC) structure, which overcomes the limitation of thermoelectron scattering, is not affected by the scattering of the thermoelectrons in the whole insulation layer (20), and only depends on the behavior of the thermoelectrons at the interface between the thermoelectronic emission layer (30) and the insulation layer (20). Therefore, the thickness of the insulation layer (20) can reach tens of nanometers, thereby avoiding the electric leakage of the insulation layer (20), ensuring the reliability of the whole device.

Classes IPC  ?

• H01L 31/08 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances

Abrégé

Disclosed is a laser cleaning system, comprising a laser source, an energy-transmitting optical fibre (2), a laser cleaning head (4), a coreless motor (6), a tube-connecting cylinder (7) and a reflector (9), wherein the laser source is used for outputting laser beams; the energy-transmitting optical fibre (2), with one end thereof being connected to the laser source, is used for transmitting the laser beams to the laser cleaning head (4); the coreless motor (6) is located at an end opening of the laser cleaning head (4), so as to emit the laser beams from the laser cleaning head (4) into the tube-connecting cylinder (7); and the reflector (9) is located at an outlet of the tube-connecting cylinder (7), and is used for reflecting the laser beams transmitted in the tube-connecting cylinder (7) onto an inner wall face of a pipeline. The system has a simple structure, can complete large-angle cleaning according to the cleaning requirements, is flexible and convenient to operate, and can effectively complete laser cleaning of an inner wall of a pipeline.

Classes IPC  ?

• B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
• B08B 9/051 - Nettoyage des surfaces intérieuresÉlimination des bouchons utilisant des dispositifs de nettoyage introduits dans et déplacés le long des tubes les dispositifs de nettoyage comportant des moyens autopropulseurs pour se déplacer dans les tubes les dispositifs de nettoyage comportant des moteurs pour actionner les outils de nettoyage

Abrégé

Disclosed is a multi-wavelength hybrid integrated light emitting array, comprising a plurality of light processing units, wherein each of the light processing units comprises: an active optical device (1), including a first substrate (11), with the material of the first substrate being an III-V group semiconductor material and same being used for emitting laser, and a beam splitting optical waveguide (2), including a second substrate (21), with the material of the second substrate being the same as that of the first substrate, and being used for splitting the laser to form beam split laser. The substrates of the active optical device and the beam splitting optical waveguide are the same III-V group semiconductor material, so that optical loss caused by coupling of different materials is reduced, the power consumption of the light emitting array is favorably reduced, and moreover, the preparation process and the size of the multi-wavelength hybrid integrated light emitting array are improved.

Classes IPC  ?

• H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
• H04J 14/02 - Systèmes multiplex à division de longueur d'onde
• G02B 6/122 - Éléments optiques de base, p. ex. voies de guidage de la lumière

Abrégé

A porous DBR- and InGaN-based enhanced detector chip having a resonant cavity. The chip comprises: a substrate (10); a buffer layer (11) formed on the substrate (10); a lower porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the lower porous DBR layer (12) and having a lower platform (13') on one side and a protrusion on anoother side; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a side wall passivation layer (20) formed on an upper surface of a portion of the p-type GaN layer (15), and on side walls of the protruding portion of the n-type GaN layer (13), the active region (14), and p-type GaN layer (150), wherein a window is provided at a middle portion of the side wall passivation layer (20) on the upper surface of the p-type GaN layer (15); a transparent conductive layer (16) formed on the side wall passivation layer (20) and on the p-type GaN layer (15) at the window; a negative electrode (18) formed on the platform of the n-type GaN layer (13); a positive electrode (19) fabricated at a periphery of an upper surface of the side wall passivation layer (20); and an upper dielectric DBR layer (17) formed on the transparent conductive layer (16) and the positive electrode (19).

Classes IPC  ?

• H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif

Abrégé

A porous DBR- and GaN-based VCSEL chip, and manufacturing method thereof. The chip comprises: a substrate (10); a buffer layer (11) fabricated on the substrate (10); a lower porous DBR layer (12) fabricated on the buffer layer (11); an n-doped GaN layer (13) fabricated on the lower porous DBR layer (12), wherein the n-doped GaN layer is etched to form a lower platform (13'); an active layer (14) fabricated on the n-doped GaN layer (13); an electron barrier layer (15) fabricated on the active layer (14); a p-doped GaN layer (16) fabricated on the electron barrier layer (15); a current limiting layer (17) fabricated on the p-doped GaN layer (16) and having an electrical current window (17') formed at a middle portion thereof, wherein the current limiting layer (17) covers side walls of the active layer (14), the electron barrier layer (15), and a protruding portion (13") of the n-doped GaN layer (13); a transparent electrode (18) fabricated on the p-doped GaN layer (16); a negative electrode (20) fabricated on the platform (13') of the n-doped GaN layer (13); a positive electrode (21) fabricated on the transparent electrode (18) and having a recess at a middle portion thereof; and a dielectric DBR layer (19) fabricated on the transparent electrode (18) in the recess of the positive electrode (21).

Classes IPC  ?

• H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]

Abrégé

Provided are a voltage control magnetic random storage unit, a memory and a logic device composed thereby. The storage unit comprises: a ferroelectric layer, a positive or negative first voltage being applied thereon, thereby controlling flip in orientation of the magnetization; a spin-orbit coupling layer located above the ferroelectric layer, a second voltage being applied on the layer, generating a spin current perpendicular to the direction of the layer; and a first magnetic layer located above the spin-orbit coupling layer, the spin current being able to induce magnetism of the first magnetic layer to randomly flip up and down. Combined with the first voltage applied on the ferroelectric layer, the spin current can induce a flip in orientation of the first magnetic layer. By applying voltage on two ends of the ferroelectric layer to generate ferroelectric polarization, a non-uniform spin-orbit coupling effect is generated, enabling modulation of the current inducing the direction of the flip of magnetism of a magnetic thin film.

Classes IPC  ?

• H01L 43/12 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

The present disclosure provides an analog readout preprocessing circuit for a CMOS image sensor and a control method thereof. The analog readout preprocessing circuit comprises an extended count-type integration cycle-successive approximation hybrid analog-to-digital conversion capacitor network 1 configured to achieve readout and analog-to-digital conversion of signals output from the CMOS image sensor; an operational amplifier configured to utilize “virtual short” of two input terminals of the operational amplifier and the charge conservation principle, to achieve a function of extended count-type integration cycle-successive approximation hybrid analog-to-digital conversion, where the extended count-type integration can effectively reduce a thermal noise and a flicker noise within the image sensor; a comparator configured to compare voltages at two terminals to achieve a function of quantization of signals; and a control signal generator configured to provide control signals.

Classes IPC  ?

• H03M 1/06 - Compensation ou prévention continue de l'influence indésirable de paramètres physiques
• H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
• H03M 1/10 - Calibrage ou tests
• H03M 1/80 - Conversion simultanée utilisant des impédances pondérées
• H03M 1/02 - Convertisseurs réversibles analogiques/numériques
• H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p. ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur

Abrégé

The present invention discloses a semiconductor laser comprising an optical waveguide structure which may include a lower waveguide layer, an active layer of multiple quantum wells and an upper waveguide layer, which are successively stacked from bottom to top, a grating layer being formed on upper portion of the active layer, wherein the upper waveguide layer, a cladding layer and a contact layer are formed as a ridge which has a light incidence end surface and a light output end surface, wherein a beam expanding structure is formed on one end of the output end surface. The beam expanding structure has a beam expanding portion with a shape gradually contracted inwards from the light output end surface. Preferably, the beam expanding portion has a horizontal divergence angle of 5° to 20°.

Classes IPC  ?

• H01S 5/10 - Structure ou forme du résonateur optique
• H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
• H01S 5/028 - Revêtements
• H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
• H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
• H01S 5/022 - SupportsBoîtiers

Abrégé

An integral chip is disclosed by embodiments of the present disclosure, including: two mono-mode vertical coupling gratings, two modulation modules, one 2×1 multi-mode interference coupler, and one dual-mode vertical coupling grating. The integral chip is capable of operating in dual wavelengths and dual polarization states by combination of polarization multiplexing and wavelength division multiplexing so as to realize modulation of complex formats and to enhance data modulation rate.

Classes IPC  ?

• G02F 1/035 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des céramiques ou des cristaux électro-optiques, p. ex. produisant un effet Pockels ou un effet Kerr dans une structure de guide d'ondes optique
• G02F 1/225 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence dans une structure de guide d'ondes optique
• G02F 1/025 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments à semi-conducteurs ayant des barrières de potentiel, p. ex. une jonction PN ou PIN dans une structure de guide d'ondes optique
• G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
• G02F 1/21 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur par interférence

Abrégé

An ultraviolet laser 3D printing device includes a thermostat, a laser head, a non-contact type temperature monitoring device, a scanning galvanometer, a processing platform, a powder laying device, a material to be processed, a computer control system. The device is configured to perform the following functions: presetting a processing temperature by the control system; during the processing procedure, the temperature rise condition of the processed object is monitored by the non-contact type temperature monitoring device and fed back in real time to the control system; and by recording the rise value of the temperature within a certain period, the system can obtain the absorption capability of the laser and the temperature rise degree of the processed material, so that the laser output power can be calculated according to the preset processing temperature value, and the laser power can be adjusted in real time to precisely control the processing temperature.

Classes IPC  ?

• B33Y 10/00 - Procédés de fabrication additive
• B23K 26/364 - Gravure au laser pour faire une rainure ou une saignée, p. ex. pour tracer une rainure d'amorce de rupture
• B23K 26/12 - Travail par rayon laser, p. ex. soudage, découpage ou perçage sous atmosphère particulière, p. ex. dans une enceinte
• B33Y 30/00 - Appareils pour la fabrication additiveLeurs parties constitutives ou accessoires à cet effet
• B23K 103/00 - Matières à braser, souder ou découper
• B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
• B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
• B29C 64/282 - Agencements pour irradiation utilisant des moyens de rayonnement multiples, p. ex. des micro-miroirs ou des diodes électroluminescentes multiples [LED] du même type, p. ex. utilisant des niveaux d’énergie différents
• B23K 26/342 - Soudage de rechargement
• B23K 26/354 - Travail par rayon laser, p. ex. soudage, découpage ou perçage pour le traitement de surface par fusion

Abrégé

A multi-band channel encrypting switch control device is provided. The device comprises a transmission part and a receiving part. The transmission part comprises: a first controller to store a secret key and to send a digital signal; an encrypting unit to encrypt the digital signal; a multi-band transmitter to select a plurality of wavebands to transmit the encrypted signal on the plurality of wavebands under control of the secret key; and a switch. The receiving part comprises: a multi-band detector to receive the encrypted signal transmitted on the plurality of wavebands; a decrypting unit to decrypt the encrypted signal; and a second controller to store the secret key and to decide whether or not to issue a switch signal by processing the signal and making decisions using the process result. A transmission device, a receiving device, and a control method are also provided. The encrypted data is transmitted via different channels to reduce possibility of signal interception during the transmission, thereby improving security significantly.

Classes IPC  ?

• H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
• H04W 72/04 - Affectation de ressources sans fil
• H04W 12/00 - Dispositions de sécuritéAuthentificationProtection de la confidentialité ou de l'anonymat
• H04L 29/06 - Commande de la communication; Traitement de la communication caractérisés par un protocole
• H04K 1/10 - Communications secrètes en utilisant deux signaux transmis simultanément ou successivement

Abrégé

The present disclosure discloses a multi-standard performance reconfigurable I/Q orthogonal carrier generator. The generator may implement a continuously covered I/Q carrier output of 0.1-5 GHz and continuously covered differential signal outputs of 5-10 GHz and 1.5-3 GHz by means of reasonable frequency assignment; also, carrier signals under various frequencies with different loop bandwidths, different phase noises, different power consumption levels and different locking times can be generated by configuring a programmable charge pump (102), a loop filter (103) parameter, a multi-path voltage-controlled oscillator (104) and a first multiplexer (105) corresponding thereto, a five-stage-division-by-two frequency division link (109) and a corresponding second multiplexer (110) and third multiplexer (112), so as to implement generation of a multi-standard performance reconfigurable I/Q orthogonal carrier.

Classes IPC  ?

• H03L 7/093 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
• H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
• H04B 1/40 - Circuits
• H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
• H03L 7/089 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence engendrant des impulsions d'augmentation ou de diminution
• H03L 7/193 - Synthèse de fréquence indirecte, c.-à-d. production d'une fréquence désirée parmi un certain nombre de fréquences prédéterminées en utilisant une boucle verrouillée en fréquence ou en phase en utilisant un diviseur de fréquence ou un compteur dans la boucle une différence de temps étant utilisée pour verrouiller la boucle, le compteur entre des nombres fixes ou le diviseur de fréquence divisant par un nombre fixe le compteur/diviseur de fréquence comportant un prédiviseur commutable, p. ex. un diviseur à double module

Abrégé

A wireless radio-frequency transmission apparatus includes a phase frequency detector, a charge pump, a loop filter and a twin voltage-controlled oscillator. The twin voltage-controlled oscillator includes a first oscillator and a second oscillator. When the twin voltage-controlled oscillator is in a reception mode, the first and the second oscillators are coupled to each other to form a quadrature voltage-controlled oscillator, and the quadrature voltage-controlled oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-locked loop to generate quadrature carriers. When the twin voltage-controlled oscillator is in a transmission mode, the first oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-locked loop, and the second oscillator performs frequency modulation on transmitted data. The present disclosure can maintain a carrier frequency to be stable during high data rate transmission, and have a relatively short locking time of frequency hopping.

Classes IPC  ?

• H03L 7/089 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence engendrant des impulsions d'augmentation ou de diminution
• H04B 1/04 - Circuits
• H04B 1/403 - Circuits utilisant le même oscillateur pour générer à la fois la fréquence de l’émetteur et la fréquence de l’oscillateur local du récepteur
• H04L 27/12 - Circuits de modulationCircuits émetteurs
• H04L 27/152 - Circuits de démodulationCircuits récepteurs avec démodulation utilisant les propriétés spectrales du signal reçu, p. ex. en utilisant des éléments sélectifs de la fréquence ou sensibles à la fréquence utilisant des oscillateurs commandés, p. ex. dispositions PLL
• H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
• H04L 7/033 - Commande de vitesse ou de phase au moyen des signaux de code reçus, les signaux ne contenant aucune information de synchronisation particulière en utilisant les transitions du signal reçu pour commander la phase de moyens générateurs du signal de synchronisation, p. ex. en utilisant une boucle verrouillée en phase

Abrégé

The present invention provides a dopant-free AlGaN-based ultraviolet (UV) light emitting diode (LED) and preparation method thereof. The dopant-free AlGaN-based UV LED comprises: a substrate (1); a dopant-free n-type layer (2) deposited on the substrate (1); an active area (3) deposited on the dopant-free n-type layer (2); and a dopant-free p-type layer (4) deposited on the active area (3). The dopant-free AlGaN-based UV LED does not adopt any dopant, increasing material quality of transistor and simplifying steps of growing layers to form the material.

Classes IPC  ?

• H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails

Abrégé

An analogue readout pre-processing circuit for a CMOS image sensor and a control method therefor. The analogue readout pre-processing circuit comprises: an extended counting-type integration cycle-successive approximation mixed-type analogue-digital conversion capacitor network (1) for realizing the readout and analogue-digital conversion of an output signal of a CMOS image sensor; an operational amplifier (2) for achieving an extended counting-type integration cycle-successive approximation mixed-type analogue-digital conversion function by means of "virtual short" of two input ends of the operational amplifier and the principle of charge conservation, wherein an extended counting-type integration can effectively reduce thermal noise and flicker noise in the image sensor; a comparator (3) for comparing magnitudes of voltages at both ends and completing a signal quantization function; and a control signal generator (4) for providing a control signal.

Classes IPC  ?

• H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
• H03M 1/12 - Convertisseurs analogiques/numériques

Abrégé

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

Classes IPC  ?

• G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
• G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p. ex. marquages d'alignement sur le substrat du masque

Abrégé

Disclosed in the present invention is a wireless radio frequency transmission device. The wireless radio frequency transmission device comprises a phase frequency detector, a charge pump, a loop filter and a twin voltage controlled oscillator, and the twin voltage controlled oscillator comprises a first voltage controlled oscillator and a second voltage controlled oscillator which are of the same structure; when the twin voltage controlled oscillator is in a reception mode, the first voltage controlled oscillator and second voltage controlled oscillator are coupled to each other to form a orthogonal voltage controlled oscillator. The orthogonal voltage controlled oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-lock loop for generating orthogonal carriers for receiving information. When the twin voltage controlled oscillator is in a transmission mode, the first voltage controlled oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-lock loop, and the second voltage controlled oscillator is used for performing frequency modulation on the transmission data. The present invention can maintain a stable carrier frequency while high data rate transmission, and the lock time of frequency hopping is rather short.

Classes IPC  ?

• H03L 7/08 - Détails de la boucle verrouillée en phase
• H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle

Abrégé

A multi-standard performance reconfigurable I/Q quadrature carrier generator. By means of reasonable frequency assignment, 0.1-5GHz continuously covered I/Q carrier output as well as 5-10GHz and 1.5-3GHz continuously covered differential signal output can be realized; meanwhile, by configuring a programmable charge pump (102), a loop filter (103) parameter, a multichannel voltage-controlled oscillator (104), a first multiplexer (105) corresponding thereto, a five-grade-division-by-two frequency division link (109) as well as a corresponding second multichannel selector (110) and third multichannel selector (112), carrier signals under various frequencies and with different loop bandwidths, different phase noises, different power consumption and different locking times can be generated, and the generation of a multi-standard performance reconfigurable I/Q quadrature carrier can be realized.

Classes IPC  ?

• H04B 1/40 - Circuits
• H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
• H03L 7/085 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie

Abrégé

A high polymer material ultraviolet laser 3D printing device for precise temperature control. The device comprises a thermostat (8), a laser head (1), a non-contact type temperature monitoring device (2), a scanning galvanometer (3), a machining platform (5), a powder paving device (6), a machining material (7) and a computer control system (9). A method for 3D printing using the printing device comprises: presetting a machining temperature by the control system (9); during the process of machining, monitoring in real time the temperature rise condition of a material (7) to be machined under the irradiation of laser by the non-contact type temperature monitoring device (2) and feeding back the temperature rise condition to the control system (9); recording the increased value of the temperature within a certain time; and obtaining the laser absorption capability and the temperature rise degree of the material (7) to be machined by the system, so that the laser output power is calculated according to the preset machining temperature value, the laser power is timely adjusted, and the machining temperature is precisely controlled. By means of the device and the method, precise temperature control of high polymer material ultraviolet laser 3D printing forming can be implemented.

Classes IPC  ?

• B29C 67/04 - Frittage
• B23K 26/12 - Travail par rayon laser, p. ex. soudage, découpage ou perçage sous atmosphère particulière, p. ex. dans une enceinte

Abrégé

The present invention proposes a dynamically reconfigurable multi-level parallel single instruction multiple data array processing system which has a pixel level parallel image processing element array and a row-parallel array processor. The PE array mainly implements a linear operation which is adapted to be executed in parallel in the low and middle levels of image processing and the RP array implements an operation which is adapted to execute in row-parallel in the low and middle levels of image processing or more complex nonlinear operations. In particularly, such a system can be dynamically reconfigured as an SOM neural network at a low cost of area, and the neural network supports high level of image processing such as a high speed online neural network training and image feature recognition, and completely overcomes a defect that a high level of image processing can't be done by pixel-level parallel processing array in the existing programmable vision chips and parallel vision processors, and facilitates an intelligent and portable real time on-chip vision image system with a complete function at low device cost and low power consumption.

Classes IPC  ?

• G06K 9/62 - Méthodes ou dispositions pour la reconnaissance utilisant des moyens électroniques
• G06F 15/80 - Architectures de calculateurs universels à programmes enregistrés comprenant un ensemble d'unités de traitement à commande commune, p. ex. plusieurs processeurs de données à instruction unique
• G06T 1/20 - Architectures de processeursConfiguration de processeurs p. ex. configuration en pipeline
• G06N 3/04 - Architecture, p. ex. topologie d'interconnexion
• G06N 3/063 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques

Abrégé

A GaN-based Schottky barrier diode rectifier and a manufacturing method thereof, the GaN-based Schottky barrier diode rectifier comprising: a substrate (100), a GaN intrinsic layer (200) and a barrier layer (300) sequentially grown on the substrate (100); a p-type 2 dimension electron gas (2DEG) depletion layer (501) located on the upper surface of the barrier layer (300), covering a partial area of the upper surface thereof, or being formed to partially or completely lie in the upper surface of the barrier layer (300); a negative electrode (702) separate from the p-type 2DEG depletion layer (501) on the barrier layer (300); a positive electrode comprising electrically connected first portion (711) and second portion (712); the first portion of the positive electrode is located on the upper surface of the p-type 2DEG depletion layer (501); and the second portion of the positive electrode is in contact with the upper surface of the barrier layer (300) not covered by the 2DEG depletion layer (501); and the second portion of the positive electrode and the negative electrode (702) are on the two sides of the 2DEG depletion layer (501) respectively.

Classes IPC  ?

• H01L 29/872 - Diodes Schottky
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
• H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type

Abrégé

Provided is a method for aligning a square wafer in a first photolithographic process, the method comprising: step A, masking the periphery of a graphic on a mask plate where first exposure of a square wafer is conducted, and making alignment marks; step B, during the first exposure process, utilizing the alignment marks on the mask plate to set the square wafer within a preset area, and exposing the square wafer via the mask graphic; and step C, during a second exposure process and subsequent exposure processes, utilizing the alignment marks left by the previous photolithographic process to align the square wafer, thus ensuring an integral margin die of the square wafer, and improving chip productivity.

Classes IPC  ?

• G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique

Abrégé

Provided is a method for forming a crystal bar with an orientation identification or a chamfer and a polygonal cross section, and the crystal bar and a substrate formed according to the method. The method comprises: on a crystal bar (20) whose cross section is a polygon, selecting a cylindrical surface parallel to the axial direction of the crystal bar (20) as a first characteristic (21) of a surface orientation identification; in the axial direction of the crystal bar (20) and in parallel with an edge on in the cylindrical surface with the first characteristic (21), forming a micro trench as a second characteristic (22) of the surface orientation identification; forming a chamfer on the crystal bar (20); and cutting the crystal bar (20) to form a sheet-shaped substrate.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
• C30B 29/60 - Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme caractérisés par la forme

Abrégé

The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system includes an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.

Classes IPC  ?

• G01R 31/00 - Dispositions pour tester les propriétés électriquesDispositions pour la localisation des pannes électriquesDispositions pour tests électriques caractérisées par ce qui est testé, non prévues ailleurs
• G01R 31/26 - Test de dispositifs individuels à semi-conducteurs

Abrégé

The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure has an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filled with conductive metal. Additionally, a n-type layer, an active layer, a p-type layer, an insulating layer and a p-type electrode are formed on the insulating substrate. The structure further may include a n-type electrode provided on a side of the upper surface of the n-type layer; a first back electrode provided at one side of the back surface of the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate; and an optical element packaged on the base substrate.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
• H01L 29/22 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIBVI
• H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
• H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
• H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
• H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
• H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
• H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière

Abrégé

Disclosed is a dynamically reconfigurable multistage parallel single-instruction multiple-data array processing system, comprising a pixel-level parallel processing element (PE) array and a row-parallel row processor (RP) array, wherein the PE array mainly completes a linear operation part suitable for being parallelly executed as a full pixel in low-level and middle-level image processing, and the RP array completes operations suitable for being completed in a row-parallel mode or relatively complicated non-linear operations in low-level and middle-level processing. Particularly, the PE array also can be dynamically reconfigured into a two-dimensional self-organizing mapping (SOM) neural network at an extremely low performance and area consumption, and the neural network can realize a high-level image processing function, such as high-speed parallel online training and feature identification under the cooperation of the RP, thoroughly overcoming the defect that a pixel-level parallel processing array in an existing programmable vision chip and parallel vision processor cannot be used for high-level image processing, and promoting the realization of a low cost, low power consumption and intelligent portable high-speed real-time on-chip vision image system with complete function.

Classes IPC  ?

• G06F 9/38 - Exécution simultanée d'instructions, p. ex. pipeline ou lecture en mémoire

Abrégé

A 3D package device of a photonic integrated chip matching circuit, comprising: a first carrier substrate; a first microwave transmission line array formed by evaporation on the top surface of the first carrier substrate to provide bias voltages and high-frequency modulation signals to the photonic integrated chip; a second carrier substrate formed perpendicularly to the first carrier substrate or to have a certain angle with respect to the first carrier substrate, so as to constitute a 3D structure; a second microwave transmission line array formed by evaporation on the bottom surface of the second carrier substrate to match electrodes of the first microwave transmission line array, the second microwave transmission line array being soldered or sintered with the electrodes of the first microwave transmission line array; an electrode array formed by evaporation on a side surface or two opposite side surfaces of the second carrier substrate; and a microwave circuit.

Classes IPC  ?

• H01Q 11/02 - Antennes non résonnantes, p. ex. antennes à onde progressive
• H01Q 13/20 - Antennes constituées par un guide non résonnant à ondes de fuite ou une ligne de transmissionStructures équivalentes produisant un rayonnement le long du trajet de l'onde guidée
• G02F 1/01 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
• H01L 23/66 - Adaptations pour la haute fréquence
• H01P 11/00 - Appareils ou procédés spécialement adaptés à la fabrication de guides d'ondes, résonateurs, lignes ou autres dispositifs du type guide d'ondes

Abrégé

A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
• H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
• H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
• H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]

Abrégé

The present invention provide a light emitting diode encapsulation structure and a manufacturing method thereof. The light emitting diode encapsulation structure comprises: an insulating substrate, a through hole being provided at two sides of the insulating substrate, and conductive metal being filled in the through hole; an n-type layer formed on the insulating substrate, a hole being provided on the n-type layer and conductive metal being filled in the hole; an active layer formed on the n-type layer; a p-type layer formed on the active layer; an insulating layer located on a side of the n-type layer, the active layer and the p-type layer and partially covering an upper surface of the p-type layer; a p electrode covering the insulating layer and partially covering the upper surface of the p-type layer; an n electrode formed on a side of an upper surface of the n-type layer, the n electrode being connected to the conductive metal in the through hole on the insulating substrate; a first back electrode formed on a side of the back of the insulating substrate, the first back electrode being connected to the p electrode through the conductive metal in the through hole on the insulating substrate; and a second back electrode formed on another side of the back of the insulating substrate, the second back electrode being connected to the n electrode through the conductive metal in the through hole on the insulating substrate. All the above parts form a base of a device. The manufacturing of the device is completed after an optical element is encapsulated on the base.

Classes IPC  ?

• H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
• H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
• H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote

Abrégé

A GaN-based vertical structure LED applying a graphene film current expansion layer, including: a p-type metallic electrode (10) including a metallic support substrate (101) and a metallic mirror (102) provided on the metallic support substrate (101); a hole injection layer (11) provided on the metallic mirror (102) of the p-type metallic electrode (10); an electron barrier layer (12) provided on the hole injection layer (11); a luminescence layer (13) provided on the electron barrier layer (12); an electron restriction layer (14) provided on the luminescence layer (13); an electron injection layer (15) provided on the electron restriction layer (14); a current expansion layer (16) provided on the electron injection layer (15); and two n-type metallic electrodes (17) provided on the current expansion layer (16) and coating a part of the current expansion layer (16).

Classes IPC  ?

• H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
• H01L 33/40 - Matériaux

Abrégé

An optical fiber secure communication apparatus and a data encryption method therefor are provided. The apparatus comprises a transmitter and a receiver being connected with each other via an optical fiber. The transmitter comprises a PPC processor unit, a field programmable gate array test board, a light-emitting module, an optical fiber coupler and a connection optical fiber. The receiver comprises a wavelength division multiplexer, a connection optical fiber, a photodetector, a field programmable gate array test board, a PPC processor unit and a signal output interface. At the transmitter end, two or more paths of input data are forwarded by the PPC, encrypted by the FPGA and then transmitted to the light-emitting module of two or more wavelengths for conversion from electrical signals into optical signals. At the receiver end, signals of two or more wavelengths enter the photodetector for conversion into electrical signals, which are decrypted by the FPGA and then forwarded by the PPC for output. With the present invention, the security of transmission data is improved and the difficulty in cracking data is increased.

Classes IPC  ?

• H04K 1/04 - Communications secrètes par mélange des fréquences, p. ex. par transposition ou inversion de parties du spectre de fréquences ou par inversion de tout le spectre

Abrégé

Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives

Abrégé

2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

Classes IPC  ?

• H04N 7/00 - Systèmes de télévision

Abrégé

This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives