Abrégé

A plasma generator and a method of using the same are proposed. The disclosed relates to a plasma generator and a method of using the same capable of improving the uniformity of plasma used in a semiconductor manufacturing process and forming fine patterns and patterns having a high aspect ratio by precisely controlling ion energy. The plasma generator includes a vacuum chamber, a source electrode provided in the vacuum chamber, a bias electrode provided to correspond to the source electrode in the vacuum chamber and on which a substrate seated thereon, a shower head unit provided on a lower part of the source electrode to supply reaction gas to a plasma space above the substrate, an RF power supply unit for applying RF power to the source electrode, and a bias power supply unit connected to the bias electrode to apply bias power.

Classes IPC  ?

• H01J 37/32 - Tubes à décharge en atmosphère gazeuse

Abrégé

A triple-electrode device for a fusing and mixing device of mixed gas/separated gas is proposed. The device includes an electrode cover to which RF power is applied, a first shower head unit provided with the electrode cover at an upper part thereof, provided with a first gas supply section into which a first gas is introduced, and provided with a plurality of nozzle stems protruding from a lower part thereof through which the first gas diffused in the first gas supply section is exhausted, and a second shower head unit coupled to the lower part of the first shower head unit, provided with a second gas supply section into which a second gas is introduced, and formed with through holes into which the nozzle stems are respectively inserted and a plurality of exhaust holes through which the second gas diffused in the second gas supply section is exhausted.

Classes IPC  ?

• C23C 16/505 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

The present invention relates to a surface treatment apparatus for cleaning or treating (micro etching, etc.) a surface of a TEM sample (substrate) by converting plasma ions into a neutral beam and a separator including an RF cathode connected to an RF supply unit and accelerating ions by self bias is disposed between a plasma generating chamber and a neutral chamber and the ions generated in the plasma generating chamber are converted into a neutral beam through a separator and accelerated and irradiated to a neutral chamber to enable surface treatment without damaging a sample.

Classes IPC  ?

• C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
• H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement Détails
• H01J 37/32 - Tubes à décharge en atmosphère gazeuse

Abrégé

Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.

Classes IPC  ?

• H01J 7/24 - Dispositifs de réfrigérationDispositifs de chauffageMoyens de circulation de gaz ou vapeurs à l'intérieur de l'espace de décharge
• H05B 31/26 - Action sur la forme de la décharge par des dispositifs de soufflage de gaz
• H01J 37/32 - Tubes à décharge en atmosphère gazeuse

Abrégé

A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna.

Classes IPC  ?

• C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
• C23F 1/00 - Décapage de matériaux métalliques par des moyens chimiques
• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
• H05B 31/26 - Action sur la forme de la décharge par des dispositifs de soufflage de gaz

Abrégé

Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, an antenna cover, and a cover holder. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

Classes IPC  ?

• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
• H01L 21/208 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant un dépôt liquide

Abrégé

Provided is a plasma generating apparatus. The apparatus includes a vacuum, an ElectroStatic Chuck (ESC), and an antenna unit. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a plurality of gas jet holes. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit covers and seals the gas jet holes with being spaced a predetermined distance apart from a surface of the vacuum plate, has a gas inlet communicating with the gas jet holes, and receives an external source RF.

Classes IPC  ?

• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs

Abrégé

Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

Classes IPC  ?

• H05H 1/24 - Production du plasma