A method of treating wastewater stream from a trivalent chromium plating process. The wastewater stream typically contains one or more of monomeric species of chromium ions having attached ligands comprising water, hydroxyl ions, and complexants, oxygen-bridged oligomers of chromium, and boric acid. The method includes the steps of (a) providing a feed tank of the wastewater stream; and (b) circulating the wastewater from the feed tank and into a membrane fibration unit comprising a nanofiltration membrane wherein the nanofiltration membrane separates the wastewater stream into a concentrate containing the one or more of monomeric species of chromium ions having attached ligands comprising water, hydroxyl ions and complexants, and oxygen-bridged oligomers of chromium and a permeate comprising the boric acid and water. The permeate and the concentrate can be further treated for use as a feedstock for a trivalent chromium electrolyte bath or for discharge to a wastewater treatment plant.
C02F 103/16 - Nature de l'eau, des eaux résiduaires ou des eaux ou boues d'égout à traiter provenant de procédés métallurgiques, c.-à-d. de la production, de la purification ou du traitement de métaux, p. ex. déchets de procédés électrolytiques
2.
RHENIUM-COBALT ALLOY COMPOSITION AND PROCESS FOR EFFECTIVE METAL ELECTRODEPOSITION IN 3D-INTEGRATION
A method of creating one or more metal interconnects in an electronic device, wherein the electronic device comprises one or more features within which the one or more metal interconnects are created, the method comprising the steps of (a) depositing a copper layer on the one or more features; (b) depositing a rhenium-cobalt alloy layer on the copper layer; and (c) depositing a tin or tin alloy layer on the rhenium-cobalt alloy layer; wherein the rhenium-cobalt alloy layer comprises greater than 50 wt.% rhenium.
A method of creating one or more metal interconnects in an electronic device, wherein the electronic device comprises one or more features within which the one or more metal interconnects are created, the method comprising the steps of (a) depositing a copper layer on the one or more features; (b) depositing a rhenium-cobalt alloy layer on the copper layer; and (c) depositing a tin or tin alloy layer on the rhenium-cobalt alloy layer; wherein the rhenium-cobalt alloy layer comprises greater than 50 wt. % rhenium.
A method of producing a flexible nickel phosphorus plating layer on a substrate. The substrate comprises a dielectric material with a copper layer thereon. The method includes the steps of (1) activating the substrate with a palladium activation solution to catalyze the substrate, and (2) contacting the activated substrate with an electroless nickel phosphorus plating solution comprising (i) a source of nickel ions; (ii) a source of hypophosphite ions; (iii) at least one complexing agent; and (iv) an organic flex additive. The nickel phosphorus plating layer deposited on the substrate exhibits a columnar grain structure.
C23C 18/36 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs d'hypophosphites
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
A process for the electroless deposition palladium on a substrate, the process comprising the steps of: (a) preparing the substrate to accept electroless palladium deposited thereon; and (b) bringing the substrate into contact with an electroless palladium composition, the electroless palladium composition comprising: (i) a source of palladium ions; (ii) one or more complexing agents; (iii) a reducing agent; and (iv) a plating rate enhancer, wherein the plating rate enhancer comprises a source of antimony ions.
C23C 18/44 - Revêtement avec des métaux nobles en utilisant des agents réducteurs
C23C 22/48 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 ne contenant ni phosphates, ni composés du chrome hexavalent, ni fluorures ou fluorures complexes, molybdates, tungstates, vanadates ou oxalates
A process for the electroless deposition palladium on a substrate, the process comprising the steps of: (a) preparing the substrate to accept electroless palladium deposited thereon; and (b) bringing the substrate into contact with an electroless palladium composition, the electroless palladium composition comprising: (i) a source of palladium ions; (ii) one or more complexing agents; (iii) a reducing agent; and (iv) a plating rate enhancer, wherein the plating rate enhancer comprises a source of antimony ions.
C23C 18/44 - Revêtement avec des métaux nobles en utilisant des agents réducteurs
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
A method of electrodepositing a copper film comprising a fine grain copper structure on a substrate. The method includes the steps of: (a) bringing the substrate into contact with an electrodeposition composition; and (b) depositing the copper film having the fine grain copper structure on the substrate. A largest dimension of the copper grains in the copper film is typically less than about 200 nm. In addition, the largest dimension of the copper grains in the copper film remains at less than about 200 nm when the copper film is annealed at a temperature of up to and including 170°C for a period of time. The copper grains grow by at least 20% or more when the copper film is annealed at a temperature of 200°C or higher.
A copper electrolyte comprising a copper salt, a source of halide ions, and a reaction product of an amine or sulfur-containing compound with 2,3-epoxy-1-propanol for producing a nanotwinned copper deposit, optionally in combination with one or more of a leveler or an accelerator. The copper electrolyte is used to initiate a high density nanotwinned copper deposit on various surfaces.
A method of selectively metallizing a multi-component molded plastic part. The multi-component molded plastic part comprises at least one first region to be metallized formed of a first plastic and at least one second region that is not to be metallized formed of a second plastic. The method includes the steps of (a) contacting the multi-component molded plastic part with a chromic acid-free etchant, wherein the chromic acid-free etchant comprises manganese sulfate; (b) optionally, neutralizing the manganese sulfate to Mn2+ ions; (c) activating surfaces of the plastic part with an activator; (d) contacting the activated surfaces of the plastic part with an accelerator; and (e) depositing an electroless plating layer on the surfaces of the multi-component molded plastic part with an electroless plating electrolyte comprising nickel and copper to form an electroless copper-nickel layer on substantially only the first region formed of the first plastic.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemical compositions for use in metal deposition processes and addition agents therefor, namely, chemicals for use in electroless nickel plating processes
17.
Composition and Method for Fabrication of Nickel Interconnects
A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
A method of metallizing plastic parts, the method comprising the steps of: (a) etching a plastic part, by introducing the plastic part into an aqueous, acidic ozone etching solution, (b) metallizing the ozone etched, plastic part, and (c) heating the metallized part in an oven at an elevated temperature for a period of time. The ozone-etched and metallized plastic part after being heated in the oven exhibits increased peel strength and improved adhesion.
A method of metallizing plastic parts, the method, comprising the steps of: (a) etching a plastic part, by introducing the plastic part, into an aqueous, acidic ozone etching solution, (b) metallizing the ozone-etched, plastic part, and (c) heating the metallized part in an oven at an elevated temperature for a period of time. The ozone-etched and metallized plastic part after being heated in the oven exhibits increased peel strength and improved adhesion.
A method of metallizing plastic parts, the method, comprising the steps of: (a) etching a plastic part, by introducing the plastic part, into an aqueous, acidic ozone etching solution, (b) metallizing the ozone-etched, plastic part, and (c) heating the metallized part in an oven at an elevated temperature for a period of time. The ozone-etched and metallized plastic part after being heated in the oven exhibits increased peel strength and improved adhesion.
A.method is provided for stabilizing manganese(III)-based etching solutions containing manganese(III) ions and one or more acids, in which the one or more acids have a concentration of at least 18 molar acidity, The method includes the step of adding an. effective amount of one or more stabilizing metal ions to the etching solution. The stabilizing metal ions eliminate or at least substantially reduce the tendency of the etching solution to form manganese dioxide during extended operation of the solution in long-term production plant operations and prevent any resulting build-up of manganese dioxide precipitate on surfaces.
C23F 1/38 - Compositions alcalines pour les métaux réfractaires
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
22.
SUPPRESSION OF MANGANESE DIOXIDE FORMATION IN MANGANESE (III)-BASED ETCHING SOLUTIONS
A.method is provided for stabilizing manganese(III)-based etching solutions containing manganese(III) ions and one or more acids, in which the one or more acids have a concentration of at least 18 molar acidity, The method includes the step of adding an. effective amount of one or more stabilizing metal ions to the etching solution. The stabilizing metal ions eliminate or at least substantially reduce the tendency of the etching solution to form manganese dioxide during extended operation of the solution in long-term production plant operations and prevent any resulting build-up of manganese dioxide precipitate on surfaces.
C23F 1/38 - Compositions alcalines pour les métaux réfractaires
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
23.
SUPPRESSION OF MANGANESE DIOXIDE FORMATION IN MANGANESE (III)-BASED ETCHING SOLUTIONS
A method is provided for stabilizing manganese(III)-based etching solutions containing manganese(III) ions and one or more acids, in which the one or more acids have a concentration of at least 18 molar acidity. The method includes the step of adding an effective amount of one or more stabilizing metal ions to the etching solution. The stabilizing metal ions eliminate or at least substantially reduce the tendency of the etching solution to form manganese dioxide during extended operation of the solution in long-term production plant operations and prevent any resulting build-up of manganese dioxide precipitate on surfaces.
A method of metallizing a dielectric substrate with a nickel-boron alloy or cobalt-boron alloy to deposit a thin layer of the alloy that exhibits good conductivity. The process includes an activation step that includes two stages of activation with a noble metal such as palladium. Thereafter, the dielectric substrate is metallized with a nickel-boron or cobalt-boron alloy by electroless deposition.
The present invention is directed to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of two aromatic amines, a complexing agent for copper (II) ions, and an accelerator such as dithiodiglycolic acid, thioglycolic acid, thiourea, ammonium thiocyanate, thiocyanic acid, or combinations of the foregoing. The invention is also directed to a process for creating copper interconnects comprising a step of electroplating copper with said electrolyte into cavities. The electrolyte makes it possible to manufacture copper interconnects with an improved bottom-up effect during the copper filling electroplating step.
A nickel electrolyte for depositing a satin nickel layer that includes (a) at least one source of nickel ions, (b) at least one source of chloride ions, (c) at least one source of alkylsulfonic zwitterions, (d) a primary brightener, wherein the primary brightener comprises saccharine or a salt thereof, (e) at least one sulfonic acid, (f) at least one polymer and/or copolymer based on polyethylene glycol and/or polypropylene glycol, (g) optionally, at least one wetting agent, and (h) optionally, at least one additional brightener. A method of electrodepositing a satin nickel layer on a substrate is also included.
A nickel electrolyte for depositing a satin nickel layer that includes (a) at least one source of nickel ions, (b) at least one source of chloride ions, (c) at least one source of alkylsulfonic zwitterions, (d) a primary brightener, wherein the primary brightener comprises saccharine or a salt thereof, (e) at least one sulfonic acid, (f) at least one polymer and/or copolymer based on polyethylene glycol and/or polypropylene glycol, (g) optionally, at least one wetting agent, and (h) optionally, at least one additional brightener. A method of electrodepositing a satin nickel layer on a substrate is also included.
The present invention relates to an electrolyte and its use in a process for fabricating copper interconnects. The electrolyte of pH greater than 6.0 comprises copper ions, manganese or zinc ions, and ethylenediamine which complexes the copper. A thin barrier layer is formed by annealing the deposited copper alloy, which causes manganese or zinc to migrate to the interface between the insulating dielectric material and the copper.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
A method of producing a flexible nickel phosphorus plating layer on a substrate. The substrate comprises a dielectric material with a copper layer thereon. The method includes the steps of (1) activating the substrate with a palladium activation solution to catalyze the substrate, and (2) contacting the activated substrate with an electroless nickel phosphorus plating solution comprising (i) a source of nickel ions; (ii) a source of hypophosphite ions; (iii) at least one complexing agent; and (iv) an organic flex additive. The nickel phosphorus plating layer deposited on the substrate exhibits a columnar grain structure.
C23C 18/00 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 18/36 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs d'hypophosphites
A method of producing a flexible nickel phosphorus plating layer on a substrate. The substrate comprises a dielectric material with a copper layer thereon. The method includes the steps of (1) activating the substrate with a palladium activation solution to catalyze the substrate, and (2) contacting the activated substrate with an electroless nickel phosphorus plating solution comprising (i) a source of nickel ions; (ii) a source of hypophosphite ions; (iii) at least one complexing agent; and (iv) an organic flex additive. The nickel phosphorus plating layer deposited on the substrate exhibits a columnar grain structure.
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 18/32 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux
C23C 18/36 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs d'hypophosphites
C23C 18/34 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs
32.
Method of Metallization by a Nickel or Cobalt Alloy for the Manufacture of Semiconductor Devices
A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface, of a mineral oxide substrate with a noble metal, such as palladium, followed by a step of depositing a nickel or cobalt alloy containing boron and at least one of phosphorus and tungsten by electroless deposition.
C23C 18/50 - Revêtement avec des alliages avec des alliages à base de fer, de cobalt ou de nickel
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 18/36 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs d'hypophosphites
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
33.
COMPOSITIONS AND METHODS FOR THE ELETRODEPOSITION OF NANOTWINNED COPPER
A copper electrolyte comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electrolyte is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxy] may comprise a reaction product between 2,3-epoxy-1-propanol and an amine compound. A leveler comprising a polymeric quaternary nitrogen species and/or an accelerator comprising an organic sulfur compound may also be added to the copper electrolyte so long as the nanotwinned columnar copper grains are maintained.
C30B 7/12 - Croissance des monocristaux à partir de solutions en utilisant des solvants liquides à la température ordinaire, p. ex. à partir de solutions aqueuses par électrolyse
C30B 29/60 - Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme caractérisés par la forme
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and blind micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to. receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more blind micro-vias in the electronic substrate: and (3) electroplating copper in the at one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias using a complex waveform including pulse reverse plating, DC plating and/or synchronous pulse plating. The complex waveforms can be used for filling through-holes and blind microvias with copper without defects.
A copper electrolyte comprising (a) a water soluble copper salt; (b) a complexant; (c) a leveler; (d) optionally a polar solvent; (e) optionally, a pH adjuster; and (f) balance water. The copper electrolyte has a pH in the range of about 8 to about 11, preferably about 8.2 to about 9.5. The copper electrolyte can be used to deposit an ultrathin copper layer on a conductive substrate that is free of pinholes and other defects and that suppresses metal dissolution.
A method of treating wastewater stream from a trivalent chromium plating process. The wastewater stream typically contains one or more of monomeric species of chromium ions having attached ligands comprising water, hydroxyl ions, and complexants, oxygen-bridged oligomers of chromium, and boric acid. The method includes the steps of (a) providing a feed tank of the wastewater stream; and (b) circulating the wastewater from the feed tank and into a membrane fibration unit comprising a nanofiltration membrane wherein the nanofiltration membrane separates the wastewater stream into a concentrate containing the one or more of monomeric species of chromium ions having attached ligands comprising water, hydroxyl ions and complexants, and oxygen-bridged oligomers of chromium and a permeate comprising the boric acid and water. The permeate and the concentrate can be further treated for use as a feedstock for a trivalent chromium elecrolyte bath or for discharge to a wastewater treatment plant.
B01D 36/04 - Combinaisons de filtres avec des bacs de décantation
B01D 46/54 - Séparateurs de particules utilisant des feuilles ou diaphragmes filtrants à structure ultra-fine, p. ex. appareils de précipitation de poussières
C02F 1/70 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par réduction
C25D 3/02 - Dépôt électrochimiqueBains utilisés à partir de solutions
37.
Electrolyte and Method for Cobalt Electrodeposition
The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/14 - Dépôt d'un seul autre élément métallique
38.
Single step electrolytic method of filling through-holes in printed circuit boards and other substrates
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at least one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias. A first pulse reverse plating waveform sequence is used to create a copper bridge in the center of the through-holes followed by direct plating until metallization is complete.
An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.
C25D 3/48 - Dépôt électrochimiqueBains utilisés à partir de solutions d'or
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
A copper electrolyte comprising a copper salt, a source of halide ions, and a reaction product of an amine or sulfur-containing compound with 2,3-epoxy-1-propanol for producing a nanotwinned copper deposit, optionally in combination with one or more of a leveler or an accelerator. The copper electrolyte is used to initiate a high density nanotwinned copper deposit on various surfaces.
A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.
A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H10B 43/27 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p. ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p. ex. avec des canaux inclinés les canaux comprenant des parties verticales, p. ex. des canaux en forme de U
45.
Electrolyte and Deposition of a Copper Barrier Layer in a Damascene Process
The present invention relates to an electrolyte and its use in a process for fabricating copper interconnects. The electrolyte of pH greater than 6.0 comprises copper ions, manganese or zinc ions, and ethylenediamine which complexes the copper. A thin barrier layer is formed by annealing the deposited copper alloy, which causes manganese or zinc to migrate to the interface between the insulating dielectric material and the copper.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
46.
METHOD OF METALLIZATION BY A NICKEL OR COBALT ALLOY FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES
A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface, of a mineral oxide substrate with a noble metal, such as palladium, followed by a step of depositing a nickel or cobalt alloy containing boron and at least one of phosphorus and tungsten by electroless deposition.
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
A copper electrolyte comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electrolyte is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxy] may comprise a reaction product between 2,3-epoxy-1-propanol and an amine compound. A leveler comprising a polymeric quaternary nitrogen species and/or an accelerator comprising an organic sulfur compound may also be added to the copper electrolyte so long as the nanotwinned columnar copper grains are maintained.
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and blind micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to. receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more blind micro-vias in the electronic substrate: and (3) electroplating copper in the at one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias using a complex waveform including pulse reverse plating, DC plating and/or synchronous pulse plating. The complex waveforms can be used for filling through-holes and blind microvias with copper without defects.
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at least one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias. A first pulse reverse plating waveform sequence is used to create a copper bridge in the center of the through-holes followed by direct plating until metallization is complete.
A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.
A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
A method of forming a diffusion harrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric· or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide,.Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a. diffusion barrier layer thereon.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
54.
Silver/tin electroplating bath and method of using the same
An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
C25D 3/64 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids d'argent
C25D 3/32 - Dépôt électrochimiqueBains utilisés à partir de solutions d'étain caractérisé par les constituants organiques utilisés pour le bain
C25D 3/12 - Dépôt électrochimiqueBains utilisés à partir de solutions de nickel ou de cobalt
C25D 3/46 - Dépôt électrochimiqueBains utilisés à partir de solutions d'argent
C25D 5/12 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome
H01R 43/26 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour engager ou séparer les deux pièces d'un dispositif de couplage
An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
B32B 15/04 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 3/26 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche continue dont le périmètre de la section droite a une allure particulièreProduits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche comportant des cavités ou des vides internes
C25D 5/00 - Dépôt électrochimique caractérisé par le procédéPrétraitement ou post-traitement des pièces
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
An electroless copper deposition composition, comprising: (a) a source of copper ions; (b) a chelator; (c) a source of alkalinity; (d) a reducing agent; (e) nickel ions; (f) a bipyridine; (g) optionally, an additional stabilizer; and (h) optionally, a water soluble polymer. The electroless copper deposition composition can be used to deposit a ductile copper deposit on a substrate that exhibits high % elongation and high tensile strength.
C23C 18/40 - Revêtement avec du cuivre en utilisant des agents réducteurs
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
57.
Compositions and methods for the electrodeposition of nanotwinned copper
A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3 -epoxy- 1 -propanol and aminic alcohol or ammonium alcohol.
An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
C08G 65/333 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant de l'azote
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromoléculePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
C25D 3/46 - Dépôt électrochimiqueBains utilisés à partir de solutions d'argent
C25D 3/32 - Dépôt électrochimiqueBains utilisés à partir de solutions d'étain caractérisé par les constituants organiques utilisés pour le bain
C25D 5/12 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome
H01R 43/26 - Appareils ou procédés spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation de connecteurs de lignes ou de collecteurs de courant ou pour relier les conducteurs électriques pour engager ou séparer les deux pièces d'un dispositif de couplage
62.
SILVER/TIN ELECTROPLATING BATH AND METHOD OF USING THE SAME
An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.
An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
66.
Cobalt filling of interconnects in microelectronics
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more micro-vias by contacting the electronic substrate with an acid copper electroplating solution. The acid copper plating solution comprises a source of copper ions; sulfuric acid; a source of chloride ions; a brightener; a wetter; and a leveler. The acid copper electroplating solution plates the one or more through-holes and/or the one or more micro-vias until metallization is complete.
A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more micro-vias by contacting the electronic substrate with an acid copper electroplating solution. The acid copper plating solution comprises a source of copper ions; sulfuric acid; a source of chloride ions; a brightener; a wetter; and a leveler. The acid copper electroplating solution plates the one or more through-holes and/or the one or more micro-vias until metallization is complete.
A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
A method of creating a selectively plated three-dimensional thermoplastic part. The method includes the steps of: a) providing a film of uncured polycarbonate film having a hardcoated layer on a first surface thereof; b) selectively catalyzing the polycarbonate film by depositing a catalyst in a desired pattern on the first surface of the polycarbonate film; c) thermoforming the polycarbonate film to form a three-dimensional polycarbonate film; d) UV- curing the hardcoated polycarbonate film by irradiating the film with UV rays; e) molding the hardcoated polycarbonate film to produce a three-dimensional molded part comprising the hardcoated polycarbonate film; f) activating the selectively catalyzed hardcoated polycarbonate film; and g) plating a metal layer on the catalyzed portions of the hardcoated polycarbonate film, wherein the plated metal only deposits on the catalyzed portions of the hardcoated polycarbonate film.
C09D 5/44 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte pour des applications électrophorétiques
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
73.
SELECTIVE PLATING OF THREE DIMENSIONAL SURFACES TO PRODUCE DECORATIVE AND FUNCTIONAL EFFECTS
A method of creating a selectively plated three-dimensional thermoplastic part. The method includes the steps of: a) providing a film of uncured polycarbonate film having a hardcoated layer on a first surface thereof; b) selectively catalyzing the polycarbonate film by depositing a catalyst in a desired pattern on the first surface of the polycarbonate film; c) thermoforming the polycarbonate film to form a three-dimensional polycarbonate film; d) UV- curing the hardcoated polycarbonate film by irradiating the film with UV rays; e) molding the hardcoated polycarbonate film to produce a three-dimensional molded part comprising the hardcoated polycarbonate film; f) activating the selectively catalyzed hardcoated polycarbonate film; and g) plating a metal layer on the catalyzed portions of the hardcoated polycarbonate film, wherein the plated metal only deposits on the catalyzed portions of the hardcoated polycarbonate film.
C09D 5/44 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte pour des applications électrophorétiques
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
74.
Selective plating of three dimensional surfaces to produce decorative and functional effects
A method of creating a selectively plated three-dimensional thermoplastic part. The method includes the steps of: a) providing a film of uncured polycarbonate film having a hardcoated layer on a first surface thereof; b) selectively catalyzing the polycarbonate film by depositing a catalyst in a desired pattern on the first surface of the polycarbonate film; c) thermoforming the polycarbonate film to form a three-dimensional polycarbonate film; d) UV-curing the hardcoated polycarbonate film by irradiating the film with UV rays; e) molding the hardcoated polycarbonate film to produce a three-dimensional molded part comprising the hardcoated polycarbonate film; f) activating the selectively catalyzed hardcoated polycarbonate film; and g) plating a metal layer on the catalyzed portions of the hardcoated polycarbonate film, wherein the plated metal only deposits on the catalyzed portions of the hardcoated polycarbonate film.
The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C08G 65/333 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant de l'azote
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
77.
Cobalt filling of interconnects in microelectronics
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.
An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
C08G 65/333 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant de l'azote
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromoléculePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.
C23C 22/05 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses
C23G 1/26 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions neutres avec emploi d'inhibiteurs
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
C23G 1/00 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus
A method of preparing a non-conductive substrate to allow metal plating thereon. The method includes the steps of a) contacting the non-conductive substrate with a conditioner comprising a conditioning agent; b) applying a carbon-based dispersion to the conditioned substrate, wherein the carbon-based dispersion comprises carbon or graphite particles dispersed in a liquid solution; and c) etching the non-conductive substrate. The etching step is performed before the liquid carbon-based dispersion dries on the non-conductive substrate.
C25D 5/54 - Dépôt électrochimique sur des surfaces non métalliques
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.
C23G 1/00 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus
C23G 1/02 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions acides
C23G 1/24 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions neutres
C23C 22/00 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux
C23C 22/05 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses
C23C 22/06 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6
C23C 22/07 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des phosphates
C23C 22/13 - Orthophosphates contenant des cations du zinc et des anions nitrites ou nitrates
C11D 11/00 - Méthodes particulières pour la préparation de compositions contenant des mélanges de détergents
A method of preparing a non-conductive substrate to allow metal plating thereon. The method includes the steps of a) contacting the non-conductive substrate with a conditioner comprising a conditioning agent; b) applying a carbon-based dispersion to the conditioned substrate, wherein the carbon-based dispersion comprises carbon or graphite particles dispersed in a liquid solution; and c) etching the non-conductive substrate. The etching step is performed before the liquid carbon-based dispersion dries on the non-conductive substrate.
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
C23G 1/26 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions neutres avec emploi d'inhibiteurs
C23G 1/00 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus
85.
Compositions including a high molecular weight acid suitable for conductive polymer formation on dielectric substrate
The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions. The acid is typically a high molecular weight polymeric acid having molecular weight of at least 500,000 Da including, for example, polystyrene sulfonic acid having a molecular weight of approximately 1,000,000 Da.
C09D 5/44 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte pour des applications électrophorétiques
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
Textured hardcoat films are disclosed for preferable use in film insert moulding. Texture in the hardcoat film is created through the use of a textured protective overlayer, which can impart texture to the curable coating of the hardcoat film. This process preferably avoids the need to alter the composition of the curable coating to allow for texture and preferably produces a hardcoat film with a matte and reduced-glare finish. An apparatus and a method embodying the invention are disclosed.
B29C 41/20 - Façonnage par revêtement d'un moule, noyau ou autre support, c.-à-d. par dépôt de la matière à mouler et démoulage de l'objet forméAppareils à cet effet pour la fabrication d'objets de longueur définie, c.-à-d. d'objets séparés en incorporant des parties ou des couches préformées, p. ex. moulage autour d'inserts ou sur des objets à recouvrir
B29C 67/00 - Techniques de façonnage non couvertes par les groupes , ou
C09D 4/06 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable en combinaison avec un composé macromoléculaire autre qu'un polymère non saturé des groupes
Textured hardcoat films are disclosed for preferable use in film insert moulding. Texture in the hardcoat film is created through the use of a textured protective overlayer, which can impart texture to the curable coating of the hardcoat film. This process preferably avoids the need to alter the composition of the curable coating to allow for texture and preferably produces a hardcoat film with a matte and reduced-glare finish. An apparatus and a method embodying the invention are disclosed.
B05D 5/02 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir une surface mate ou rugueuse
B29C 45/14 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet en incorporant des parties ou des couches préformées, p. ex. moulage par injection autour d'inserts ou sur des objets à recouvrir
B29C 69/02 - Combinaisons de techniques de façonnage non prévues dans un seul des groupes principaux , p. ex. associations de techniques de moulage et d'assemblageAppareils à cet effet de techniques de moulage uniquement
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B29C 69/00 - Combinaisons de techniques de façonnage non prévues dans un seul des groupes principaux , p. ex. associations de techniques de moulage et d'assemblageAppareils à cet effet
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
B29K 669/00 - Utilisation de polycarbonates pour des pièces préformées, p. ex. pour des inserts
B05D 1/28 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par transfert de liquides ou d'autres matériaux fluides, à partir de la surface d'éléments porteurs, p. ex. de pinceaux, tampons, rouleaux
B29C 51/10 - Formage par une différence de pression, p. ex. sous vide
B05D 7/04 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers à des substances macromoléculaires, p. ex. à du caoutchouc à la surface de films ou de feuilles
B05D 1/42 - Distribution des liquides ou d'autres matériaux fluides, appliqués par des éléments se déplaçant par rapport à la surface à couvrir par des éléments non rotatifs
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.
Features such as bumps, pillars and/or vias can be plated best using current with either a square wave or square wave with open circuit wave form. Using the square wave or square wave with open circuit wave forms of plating current, produces features such as bumps, pillars, and vias with optimum shape and filling characteristics. Specifically, vias are filled uniformly and completely, and pillars are formed without rounded tops, bullet shape, or waist curves. In the process, the metalizing substrate is contacted with an electrolytic copper deposition composition. The deposition composition comprises a source of copper ions, an acid component selected from among an inorganic acid, an organic sulfonic acid, and mixtures thereof, an accelerator, a suppressor, a leveler, and chloride ions.
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
92.
ELIMINATION OF H2S IN IMMERSION TIN PLATING SOLUTION
22S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
C23C 18/54 - Dépôt par contact, c.-à-d. dépôt électrochimique sans courant
93.
Elimination of H2S in immersion tin plating solution
2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
94.
Flexible color adjustment for dark Cr(III) platings
The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.
An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.
A process for electrodepositing a copper layer on a metalizing substrate is described. The metalizing substrate comprising a seminal conductive layer positioned on and in electrically conductive communication with a photovoltaic cell panel comprising a semiconductor material. The process comprises the steps of (i) contacting the metalizing substrate with an aqueous electrodeposition composition, and (ii) supplying electrolytic current to the aqueous electrodeposition composition to cause deposit of copper on the metalizing substrate. The aqueous electrodeposition composition comprises (a) a source of copper ions, (b) an acid, (c) chloride ions, and (d) a depolarizer comprising an organic sulfonate anion selected from the group consisting of an O-alkyl-S-sulfohydrocarbylxanthate, mercaptopropane sulfonate, bis(sulfopropyl)disulfide, N,N-dimethylamino-dithiocarbamoyl-l -propane sulfonate, acid hydrolysis products of said organic sulfonates, and mixtures of said organic sulfonates and hydrolysis products.
An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
C07C 333/20 - Esters d'acides dithiocarbamiques ayant des atomes d'azote de groupes dithiocarbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques
C07D 213/04 - Composés hétérocycliques contenant des cycles à six chaînons, non condensés avec d'autres cycles, ne comportant qu'un atome d'azote comme unique hétéro-atome du cycle et avec au moins trois doubles liaisons entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques comportant trois liaisons doubles ne comportant pas de liaison entre l'atome d'azote du cycle et un chaînon non cyclique ou ne comportant que des atomes d'hydrogène ou de carbone liés directement à l'atome d'azote du cycle
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
The present invention relates to the use of water soluble lanthanide compounds as stabilizer in electrolytes for electroless metal deposition, an electrolyte as well as a method for the electroless deposition of metals, particularly layers of nickel, copper, cobalt, boron, silver, palladium or gold, as well as layers of alloys comprising at least one of the aforementioned metals as alloying metal.
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 18/40 - Revêtement avec du cuivre en utilisant des agents réducteurs
99.
Leveler compositions for use in copper deposition in manufacture of microelectronics
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C08G 65/333 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant de l'azote
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
100.
LEVELER COMPOSITIONS FOR USE IN COPPER DEPOSITION IN MANUFACTURE OF MICROELECTRONICS
An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure IN and p repeating units corresponding to structure IP:
