In described examples, a method of operating a charged particle beam tool including a charged particle beam column configured to generate a charged particle beam includes capturing an under-focused image of a calibration target using the beam and capturing an over-focused image of the target using the beam. After determining an offset vector between the under-focused and over-focused images, if a magnitude of the offset vector is greater than a threshold, a charge distribution of the alignment electrodes is adjusted so that the charged particle beam has an adjusted alignment. The adjustment is made in response to the offset vector, to reduce a disalignment of the beam from an optical axis of the column. The method is then repeated using the adjusted alignment. If the magnitude of the offset vector is less than the threshold, the substrate is processed using the adjusted alignment.
Methods, systems and devices for using different encryption keys written into interconnects of different functional blocks in different integrated circuits to securely encrypt and authenticate firmware, data, instructions and other messages transmitted among said functional blocks; and methods, systems and devices to obfuscate encryption keys to significantly increase the time and resources required to compromise those keys, ensuring encrypted data is only decrypted by authorized functional blocks, applications or users. Unique keys, small enough not to impact substrate surface area available for other device functions, can be written by charged particle beams such that multiple (or each of) functional blocks has a corresponding key unique within an IC and across a line of ICs and so that access to said keys is as limited (or nonexistent) as desired. Circuits embodying key bits can also be distributed throughout ICs and across layers, uniquely to individual functional blocks in individual ICs, to obfuscate patterns implementing keys and thereby raising time and resource cost to reverse engineer keys to prohibitive levels.
G06F 21/00 - Dispositions de sécurité pour protéger les calculateurs, leurs composants, les programmes ou les données contre une activité non autorisée
H04L 9/30 - Clé publique, c.-à-d. l'algorithme de chiffrement étant impossible à inverser par ordinateur et les clés de chiffrement des utilisateurs n'exigeant pas le secret
Methods, systems and devices for using charged particle beams (CPBs) to write different die-specific, non-volatile, electronically readable data to different dies on a substrate. CPBs can fully write die-specific data within the chip interconnect structure during the device fabrication process, at high resolution and within a small area, allowing one or multiple usefully-sized values to be securely written to service device functions. CPBs can write die-specific data in areas readable or unreadable through a (or any) communications bus. Die-specific data can be used for, e.g.: encryption keys; communications addresses; manufacturing information (including die identification numbers); random number generator improvements; or single, nested, or compartmentalized security codes. Die-specific data and locations for writing die-specific data can be kept in encrypted form when not being written to the substrate to conditionally or permanently prevent any knowledge of said data and locations.
H04L 29/06 - Commande de la communication; Traitement de la communication caractérisés par un protocole
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
H04L 9/14 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité utilisant plusieurs clés ou algorithmes
H04L 9/30 - Clé publique, c.-à-d. l'algorithme de chiffrement étant impossible à inverser par ordinateur et les clés de chiffrement des utilisateurs n'exigeant pas le secret
Methods, systems and devices for using charged particle beams (CPBs) to write different die-specific, non-volatile, electronically readable data to different dies on a substrate. CPBs can fully write die-specific data within the chip interconnect structure during the device fabrication process, at high resolution and within a small area, allowing one or multiple usefully-sized values to be securely written to service device functions. CPBs can write die-specific data in areas readable or unreadable through a (or any) communications bus. Die-specific data can be used for, e.g.: encryption keys; communications addresses; manufacturing information (including die identification numbers); random number generator improvements; or single, nested, or compartmentalized security codes. Die-specific data and locations for writing die-specific data can be kept in encrypted form when not being written to the substrate to conditionally or permanently prevent any knowledge of said data and locations.
H04L 9/30 - Clé publique, c.-à-d. l'algorithme de chiffrement étant impossible à inverser par ordinateur et les clés de chiffrement des utilisateurs n'exigeant pas le secret
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
7.
Precision material modification using miniature-column charged particle beam arrays
Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
H01J 37/244 - DétecteursComposants ou circuits associés
8.
Precision substrate material removal using miniature-column charged particle beam arrays
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.
The present application discloses methods, systems and devices for using charged particle beam tools to inspect and perform lithography on a substrate using a combination of vectoring to move a beam to features to be imaged, and raster scanning to obtain an image of the feature(s). The inventors have discovered that it is highly advantageous to use an extra step, a fast raster scan to image the substrate at a lower resolution, to determine which features receive priority for inspection; this extra step can reduce total inspection time, enhance inspection results, and improve beam alignment and manufacturing yield. Using multiple beam-producing columns, with multiple control computers local to the columns, provides various synergies. Preferably, miniature, non-magnetic, electrostatically-driven columns are used.
H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam lithography and inspection tools. Further, superior substrate alignment and layer-to-layer pattern registration accuracy can be achieved using Hadamard targets patterned in edge-proximal portions of the substrate that are typically stripped bare of resist prior to lithography, in addition to Hadamard targets patterned in inner substrate portions. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking. Superior alignment and registration, and column parameter optimization, allow significant yield gains.
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
H01J 37/06 - Sources d'électronsCanons à électrons
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam lithography and inspection tools. Further, superior substrate alignment and layer-to-layer pattern registration accuracy can be achieved using Hadamard targets patterned in edge-proximal portions of the substrate that are typically stripped bare of resist prior to lithography, in addition to Hadamard targets patterned in inner substrate portions. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking. Superior alignment and registration, and column parameter optimization, allow significant yield gains.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
13.
Charged particle beam substrate inspection using both vector and raster scanning
The present application discloses methods, systems and devices for using charged particle beam tools to inspect and perform lithography on a substrate using a combination of vectoring to move a beam to features to be imaged, and raster scanning to obtain an image of the feature(s). The inventors have discovered that it is highly advantageous to use an extra step, a fast raster scan to image the substrate at a lower resolution, to determine which features receive priority for inspection; this extra step can reduce total inspection time, enhance inspection results, and improve beam alignment and manufacturing yield. Using multiple beam-producing columns, with multiple control computers local to the columns, provides various synergies. Preferably, miniature, non-magnetic, electrostatically-driven columns are used.
H01J 49/00 - Spectromètres pour particules ou tubes séparateurs de particules
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
14.
Precision substrate material removal using miniature-column charged particle beam arrays
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/05 - Dispositifs électronoptiques ou ionoptiques pour la séparation des électrons ou des ions en fonction de leur énergie
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
15.
Precision deposition using miniature-column charged particle beam arrays
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement par irradiation, p. ex. par photolyse, radiolyse ou rayonnement corpusculaire
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
17.
Matched multiple charged particle beam systems for lithographic patterning, inspection, and accelerated yield ramp
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
The invention provides a method for patterning a resist coated substrate carried on a stage, where the patterning utilizes a charged particle beam. The method comprises the steps of: moving the stage at a nominally constant velocity in a first direction; while the stage is moving, deflecting the charged particle beam in the first direction to compensate for the movement of the stage, the deflecting including: (a) compensating for an average velocity of the stage; and (b) separately compensating for the difference between an instantaneous position of the stage and a calculated position based on the average velocity. The separately compensating step uses a bandwidth of less than 10 MHz. The invention also provides a deflector control circuit for implementing the separate compensation functions.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
21.
Charged particle optics with azimuthally-varying third-order aberrations for generation of shaped beams
A charged particle shaped beam column includes: a charged particle source; a gun lens configured to provide a charged particle beam approximately parallel to the optic axis of the column; an objective lens configured to form the charged particle shaped beam on the surface of a substrate, wherein the disk of least confusion of the objective lens does not coincide with the surface of the substrate; an optical element with 8N poles disposed radially symmetrically about the optic axis of the column, the optical element being positioned between the condenser lens and the objective lens, wherein N is an integer greater than or equal to 1; and a power supply configured to apply excitations to the 8N poles of the optical element to provide an octupole electromagnetic field. The octupole electromagnetic field is configured to induce azimuthally-varying third-order deflections to the beam trajectories passing through the 8N-pole optical element. By controlling the excitation of the 8N poles a shaped beam, such as a square beam, can be formed at the surface of the substrate. The 8N-pole element can be magnetic or electrostatic.
A detector optics system for collecting secondary electrons (SEs) and/or backscattered electrons (BSEs) in a multiple charged particle beam test system is disclosed. Aspects of the detector optics system include: the ability to image and/or electrically test a number of locations simultaneously across the full width of a large substrate with high throughput and uniform collection efficiency while avoiding crosstalk between signals generated by neighboring beams. In one embodiment, a linear array of N electron beams causes SEs to be emitted from the substrate, which are then collected by one or more linear arrays of ≧2N detectors. Each linear array is connected to a signal combiner circuit which dynamically determines which detectors are collecting SEs generated by each electron beam as it scans across the substrate surface and then combines the signals from these detectors to form N simultaneous output signals (one per charged particle beam) for each detector array.
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou
23.
Optics for generation of high current density patterned charged particle beams
A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.
A charged particle optical system for testing, imaging or inspecting substrates comprises: a charged particle optical assembly configured to produce a line of charged particle beams equally spaced along a main scan axis, each beam being deflectable through a large angle along the main scan axis; and linear detector optics aligned along the main scan axis. The detector optics includes a linear secondary electron detector, a field free tube, voltage contrast plates and a linear backscattered electron detector. The large beam deflection is achieved using an electrostatic deflector for which the exit aperture is larger than the entrance aperture. One embodiment of the deflector includes: two parallel plates with chamfered inner surfaces disposed perpendicularly to the main scan axis; and a multiplicity of electrodes positioned peripherally in the gap between the plates, the electrodes being configured to maintain a uniform electric field transverse to the main scan axis.
A detector optics system for an electron probe system is disclosed. Aspects of the detector optics system include: the ability to simultaneously detect two electron populations, secondary electrons (SEs) and backscattered electrons (BSEs), wherein both populations are emitted from a substrate due to the impact of the electron probe. The design of the detector optics utilizes a field-free tunnel and substrate electric-field control electrodes to enable separation of the SEs and BSEs into two detectors, allowing simultaneous acquisition of topographic and elemental composition data, with minimal impact on the electron probe. The secondary electron signal is a monotonically-varying function of the voltage on the substrate surface. The ratio of the SE signal to the BSE signal gives a testing signal which is independent of the primary beam current and serves as an absolute voltage probe of surface voltages without the need for an external reference voltage.
