Abrégé

A filter comprises a stack of wafers (28). Each of the wafers has a through hole (6). Edges (7) of the holes together define an internal tube. An interface (32) between adjacent wafers defines filter channels. The filter channels comprises first coarse filter channels (20), second coarse filter channels (22) and fine filter channels (26). The first coarse filter channels are open towards an outer rim (5), extend in a direction from the outer rim and are closed towards the internal tube. The second coarse filter channels are arranged in an opposite manner. The fine filter channels connect the first and second coarse filter channels. The first and second coarse filter channels extend radially (R) and the fine filter channels extend tangentially (T). The first and second coarse filter channels are defined by recesses in a surface of a first wafer and the fine filter channels are defined by recesses, each one encircling the hole, in a surface of a second wafer.

Classes IPC  ?

• B01D 29/46 - Éléments filtrants à arêtes, c.-à-d. utilisant des surfaces imperméables adjacentes à éléments plats empilés
• B01D 29/44 - Éléments filtrants à arêtes, c.-à-d. utilisant des surfaces imperméables adjacentes
• B01D 29/56 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants à plusieurs éléments filtrants caractérisés par leur agencement relatif montés en série
• B01D 29/58 - Filtres à éléments filtrants stationnaires pendant la filtration, p. ex. filtres à aspiration ou à pression, non couverts par les groupes Leurs éléments filtrants à plusieurs éléments filtrants caractérisés par leur agencement relatif montés en série disposés de façon concentrique ou coaxiale

Abrégé

A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ. The driving gas comprises preferably a compound exhibiting an exothermic reaction when coming into contact with a catalytically active material. If the gas is exposed to heater microstructures being covered with the catalytically active material, the gas is further heated by the catalytic reaction.

Classes IPC  ?

• B64G 1/40 - Aménagements ou adaptations des systèmes de propulsion
• F03H 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe

Abrégé

A micromechanical pressure relief valve arrangement (10) comprises a stack of wafers (13). An active pressure relief valve (20) is realized within the stack of wafers (13). A passive pressure relief valve (30) is also realized within said stack of wafers (13), arranged in parallel to the active pressure relief valve (20). A check valve (50), also realized within the stack of wafers (13), is arranged in series with both the active pressure relief valve (20) and the passive pressure relief valve (30).

Classes IPC  ?

• B81B 7/00 - Systèmes à microstructure
• F16K 15/14 - Soupapes, clapets ou valves de retenue à corps de soupapes flexibles
• F16K 17/28 - Soupapes ou clapets limiteurs de débit fonctionnant par différence de pression entre deux points de l'écoulement et agissant directement sur l'élément d'obturation dans un sens uniquement

Abrégé

A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.

Classes IPC  ?

• H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
• H05K 1/09 - Emploi de matériaux pour réaliser le parcours métallique
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
• H01L 21/44 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes

Abrégé

A high-pressure fire safety valve (1) comprises a disc (10) that is capable of mechanically withstanding a high-pressure difference. The disc (10) has a multitude of holes (12) penetrating through the disc (10). Each of the holes (12) has a smallest diameter (d) of less than 100 micrometer. The high- pressure fire safety valve ( 1) further comprises a sealing substance (20) in a solid phase, sealing each of the holes (12). The sealing substance (20) exhibits a phase transition into a fluid state at elevated temperatures. This configuration results in that the multitude of holes (12) constitute straight evacuation channels for the high pressure when the sealing substance (20) has performed said phase transition. A high-pressure gas container comprising such a high-pressure fire safety valve and a manufacturing method for such a high-pressure fire safety valve are also disclosed.

Classes IPC  ?

• F16K 17/38 - Soupapes ou clapets de sûretéSoupapes ou clapets d'équilibrage fonctionnant sous l'action de circonstances extérieures, p. ex. un choc, un changement de position d'une température excessive
• F17C 13/06 - Fermetures, p. ex. couvercles, organes frangibles

Abrégé

A single use valve (10) comprises a plate (12) having an internal filter structure (28). A sealing substance (20) covers an inlet (14) to the filter structure (28). A heater arrangement (16) is arranged at the plate (12) in the vicinity of the sealing substance (20) for converting electrical current into heat and thereby melting or evaporating the sealing substance (20). The heater arrangement (16) conducts at least a part of the current, and preferably the entire current, along a conduction path not including the sealing substance (20). The melting of the sealing substance (20) thereby becomes independent on the existence of a complete electrical connection through the sealing substance (20). The heater arrangement (16) has therefore preferably its main heat emission in an area surrounding the sealing substance (20). The sealing substance (20) can be of any non-porous material.

Classes IPC  ?

• F16K 17/14 - Soupapes ou clapets de sûretéSoupapes ou clapets d'équilibrage ouvrant sur excès de pression d'un côtéSoupapes ou clapets de sûretéSoupapes ou clapets d'équilibrage fermant sur insuffisance de pression d'un côté avec élément de rupture
• F16K 17/40 - Soupapes ou clapets de sûretéSoupapes ou clapets d'équilibrage avec élément de rupture, p. ex. un diaphragme de rupture, un joint fusible

Abrégé

A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ. The driving gas comprises preferably a compound exhibiting an exothermic reaction when coming into contact with a catalytically active material. If the gas is exposed to heater microstructures being covered with the catalytically active material, the gas is further heated by the catalytic reaction.

Classes IPC  ?

• F02K 9/62 - Chambres de combustion ou de poussée
• B64G 1/40 - Aménagements ou adaptations des systèmes de propulsion
• F03H 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe

Abrégé

A wafer assembly (30) comprises a substrate (71), in turn comprising a wafer (70) or a stack of wafers. The wafer assembly (30) further comprises an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.

Classes IPC  ?

• H05K 3/36 - Assemblage de circuits imprimés avec d'autres circuits imprimés
• F03H 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
• H01R 12/58 - Connexions fixes pour circuits imprimés rigides ou structures similaires caractérisées par les bornes bornes pour insertion dans des trous

Abrégé

A single use valve (10) comprises a plate (12) having an internal filter structure (28). A sealing substance (20) covers an inlet (14) to the filter structure (28). A heater arrangement (16) is arranged at the plate (12) in the vicinity of the sealing substance (20) for converting electrical current into heat and thereby melting or evaporating the sealing substance (20) . The heater arrangement (16) conducts at least a part of the current, and preferably the entire current, along a conduction path not including the sealing substance (20) . The melting of the sealing substance (20) thereby becomes independent on the existence of a complete electrical connection through the sealing substance (20). The heater arrangement (16) has therefore preferably its main heat emission in an area surrounding the sealing substance (20). The sealing substance (20) can be of any non-porous material.

Classes IPC  ?

• F16K 31/00 - Moyens de fonctionnementDispositifs de retour à la position de repos
• F03G 7/06 - Mécanismes produisant une puissance mécanique, non prévus ailleurs ou utilisant une source d'énergie non prévue ailleurs utilisant la dilatation ou la contraction des corps produites par le chauffage, le refroidissement, l'humidification, le séchage ou par des phénomènes similaires
• F16K 13/10 - Agencements pour obturer au moyen d'une substance liquide ou granulaire

Abrégé

An isolation valve system comprises a main body (32), an actuator body (34) and a sealing membrane (307). The sealing membrane (307) is arranged at a high pressure portion (36) of the isolation valve system. The sealing membrane (307) mechanically attaches the actuator body (34) to the main body (32). The sealing membrane (307) further seals the high pressure portion (36) from a low pressure portion (38). A burst plug (315) is arranged against the main body (32) and supports the actuator body (34). An activation arrangement (50) is arranged for allowing an at least partial displacement of the burst plug (315), typically causing a phase transition. The sealing membrane (307) is dimensioned to break when the actuator body (34) is moved due to the displacement of the burst plug (315). The isolation valve system comprises preferably a stack (30) of substrates (301- 304) being bonded together. The substrates (301-304) have micromechanical structures, which form at least the actuator body (34) and the sealing membrane (307).

Classes IPC  ?

• F16K 31/02 - Moyens de fonctionnementDispositifs de retour à la position de repos électriquesMoyens de fonctionnementDispositifs de retour à la position de repos magnétiques
• F16K 13/00 - Autres types structuraux de dispositifs obturateursAgencements pour obturer
• F16K 7/12 - Dispositifs d'obturation à diaphragme, p. ex. dont un élément est déformé, sans être déplacé entièrement, pour fermer l'ouverture à diaphragme plat, en forme d'assiette ou en forme de bol
• G01L 9/12 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pressionTransmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent en faisant usage des variations de la capacité
• B64G 1/40 - Aménagements ou adaptations des systèmes de propulsion