Micron Technology, Inc.
États‑Unis d’Amérique
Nouveaux brevets et marques déposées la semaine dernière
Dernière mise à jour : 2026-07-11
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Viewing 1 - 55 of 55
marques
brevets
| # | ID | Juridiction | Title |
|---|---|---|---|
| 1 | 19342194 |
|
Conductive Interconnects and Methods of Forming Conductive Interconnects |
| 2 | 19013783 |
|
MEMORY DEVICE RELIABILITY VIA READ NOISE CANCELLATION |
| 3 | 19553101 |
|
SYSTEM FOR HANDLING REPEATED PROGRAMMING ERRORS |
| 4 | 19412543 |
|
MEMORY WRITE PERFORMANCE TECHNIQUES |
| 5 | 19552422 |
|
MEMORY APPARATUS FOR PROVIDING RELIABILITY, AVAILABILITY, AND SERVICEABILITY |
| 6 | 19015070 |
|
Release of Resources Allocated and/or Used in Accessing a Storage Space of a Memory Sub-System |
| 7 | 19558309 |
|
VIRTUAL MACHINE REGISTER IN A COMPUTER PROCESSOR |
| 8 | 19550828 |
|
PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK |
| 9 | 19559814 |
|
RELIABILITY GAIN IN MEMORY DEVICES WITH ADAPTIVELY SELECTED ERASE POLICIES |
| 10 | 19012432 |
|
PROGRAM PULSE OVERDRIVE FOR PERFORMANCE GAIN IN A MEMORY DEVICE |
| 11 | 19555235 |
|
MEMORY MITIGATING SCL AFFECTS DURING POWER-ON |
| 12 | 19550176 |
|
FILLING CRACKS ON A SUBSTRATE VIA |
| 13 | 19416620 |
|
THREE-DIMENSIONAL DYNAMIC RAM WORD LINE COMB STRUCTURE |
| 14 | 19552585 |
|
ENHANCED ERROR HANDLING IN MEMORY SYSTEMS |
| 15 | 19407737 |
|
COLD MEMORY TRACKING FOR POWER SAVING ON CXL DEVICES |
| 16 | 19015283 |
|
HEALTH SCAN OF A MEMORY DEVICE USING A CODE WORD ERROR RATE MACHINE LEARNING MODEL |
| 17 | 19015038 |
|
Allocation of Memory from a Memory Space of a Memory Sub-System in Response to a Request to Access a Storage Space of the Memory Sub-System |
| 18 | 19552797 |
|
Integrated Assemblies and Methods of Forming Integrated Assemblies |
| 19 | 19015000 |
|
Allocation of Memory from a Memory Space of a Memory Sub-System to Access a Storage Space of the Memory Sub-System |
| 20 | 19010503 |
|
METHODS OF MANUFACTURING AN ELECTRONIC CIRCUIT HAVING AIR GAPS BETWEEN CONDUCTIVE LINES |
| 21 | 19407781 |
|
OFF-DIE ERROR CORRECTION FOR MEMORY DEVICES |
| 22 | 19557559 |
|
APPARATUSES, SYSTEMS, AND METHODS FOR STORING ERROR INFORMATION AND PROVIDING RECOMMENDATIONS BASED ON SAME |
| 23 | US2025061850 |
|
SHARDED CHECKPOINTING USING NON-VOLATILE MEMORY (NVM) DIES IN CACHE ON COMPUTE DEVICE |
| 24 | US2025061429 |
|
DEDICATED CHANNELS FOR DATA TRANSMISSION |
| 25 | US2025060024 |
|
MEMORY SUB-SYSTEM OPERABLE WITH MULTIPLE CONNECTIONS FOR CONCURRENT STORAGE ACCESS COMMUNICATIONS AND MEMORY ACCESS COMMUNICATIONS |
| 26 | US2025060023 |
|
MEMORY SUB-SYSTEM HAVING A CONNECTION TO A HOST SYSTEM FOR STORAGE SPACE ACCESS AND FOR MEMORY SPACE ACCESS |
| 27 | US2025060022 |
|
ACCESSING A STORAGE SPACE OF A MEMORY SUB-SYSTEM VIA A MEMORY SPACE OF THE MEMORY SUB-SYSTEM |
| 28 | US2025061736 |
|
COMBINED NON-VOLATILE MEMORY (NVM) AND DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE |
| 29 | US2025061752 |
|
TRAFFIC LOAD MANAGEMENT BETWEEN HIGH-BANDWIDTH MEMORY (HBM) AND NON-VOLATILE MEMORY (NVM) ON A SINGLE DIE |
| 30 | US2025061755 |
|
PREFETCHING AND CACHING BETWEEN HIGH BANDWIDTH MEMORY (HBM) AND NON-VOLATILE (NVM) CACHE ON PROCESSING DIE |
| 31 | US2025060228 |
|
VERTICAL THREE-DIMENSIONAL (3D) DRAM ARRAY WITH DIGITLINE SELECT CIRCUITRY |
| 32 | 19557706 |
|
READ PASS VOLTAGE ADJUSTMENT AMONG MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING |
| 33 | 19557003 |
|
MULTIPLE WRITE PROGRAMMING FOR A SEGMENT OF A MEMORY DEVICE |
| 34 | 19559218 |
|
OPTIMIZING DATABASE CURSOR OPERATIONS IN KEY-VALUE STORES |
| 35 | 19558951 |
|
VERTICAL DIGIT LINES FOR SEMICONDUCTOR DEVICES |
| 36 | 19560813 |
|
ERROR CONTROL IN MEMORY SYSTEMS USING COMBINATIONAL CIRCUITS |
| 37 | 19554376 |
|
SEMICONDUCTOR DEVICE CIRCUITRY FORMED FROM REMOTE RESERVOIRS |
| 38 | 19554136 |
|
MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE |
| 39 | 19012629 |
|
SELECTIVE BLOCK RETIREMENT FOR A MEMORY DEVICE |
| 40 | 19557635 |
|
BLOOM FILTER INTEGRATION INTO A CONTROLLER |
| 41 | 19556929 |
|
CONCURRENTLY WRITING LESS-DENSELY-PROGRAMMED AND MORE-DENSELY-PROGRAMMED MEMORY WITHOUT ADDITIONAL HARDWARE |
| 42 | 19414032 |
|
MICROELECTRONIC DEVICES HAVING SPLIT SOURCE DESIGNS, AND RELATED METHODS AND ELECTRONIC SYSTEMS |
| 43 | 19559152 |
|
SLOW CHARGE LOSS MONITOR FOR POWER UP PERFORMANCE BOOSTING |
| 44 | 19436915 |
|
TECHNIQUES TO CONFIGURE ZONAL ARCHITECTURES OF MEMORY SYSTEMS |
| 45 | 19406471 |
|
TECHNIQUES FOR EFFICIENTLY HANDLING MISALIGNED SEQUENTIAL READS |
| 46 | 19550900 |
|
BALANCING WEAR ACROSS MULTIPLE RECLAIM GROUPS |
| 47 | 19392470 |
|
BIT CONTACT LANDING AREA |
| 48 | 19392464 |
|
MULTIPLE PASS TRAINING PROCEDURES |
| 49 | US2025061431 |
|
BUFFER CHIP FOR ROUTING COMMAND/ADDRESS AND DATA SIGNALS TO A STACK OF MEMORY DIES WITHIN A MEMORY SYSTEM |
| 50 | US2025061432 |
|
THERMAL DISTRIBUTION IN COUPLED SEMICONDUCTOR SYSTEMS |
| 51 | US2025061873 |
|
SELECTIVELY ENABLING NON-VOLATILE MEMORY (NVM) DIES IN CACHE ON COMPUTE DEVICE |
| 52 | US2025061741 |
|
ADDRESS TRANSLATION FOR COMBINED NON-VOLATILE MEMORY (NVM) AND DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE |
| 53 | US2025061747 |
|
DIRECT TRANSFER BETWEEN INTERNAL MEMORY AND EXTERNAL MEMORY |
| 54 | US2025061521 |
|
MECHANISMS OF DATA TRANSFER BETWEEN VOLATILE MEMORY AND NON-VOLATILE MEMORY IN A HYBRID COMPUTE DEVICE |
| 55 | US2025061522 |
|
DEDICATED INTERFACE FOR FOLDING DATA FROM VOLATILE MEMORY (VM) DIES TO STACKED NON-VOLATILE MEMORY (NVM) DIE |
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