- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/1159 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the memory core region
Patent holdings for IPC class H01L 27/1159
Total number of patents in this class: 429
10-year publication summary
|
23
|
45
|
59
|
68
|
116
|
92
|
18
|
9
|
0
|
0
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46877 |
88 |
| Micron Technology, Inc. | 27235 |
53 |
| SK Hynix Inc. | 12014 |
34 |
| Sandisk Technologies Inc. | 5317 |
26 |
| Samsung Electronics Co., Ltd. | 152534 |
21 |
| Sandisk Technologies LLC | 1451 |
17 |
| Intel Corporation | 46625 |
15 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1511 |
15 |
| Sony Semiconductor Solutions Corporation | 11123 |
15 |
| Kioxia Corporation | 10680 |
14 |
| Ferroelectric Memory GmbH | 80 |
11 |
| International Business Machines Corporation | 62076 |
10 |
| Renesas Electronics Corporation | 5881 |
8 |
| Semiconductor Energy Laboratory Co., Ltd. | 11643 |
6 |
| National Institute of Advanced Industrial Science and Technology | 3794 |
6 |
| IMEC VZW | 1728 |
5 |
| NaMLab gGmbH | 25 |
5 |
| Sony Corporation | 30518 |
4 |
| GLOBALFOUNDRIES U.S. Inc. | 6401 |
4 |
| Tokyo Institute of Technology | 1340 |
4 |
| Other owners | 68 |