GLOBALFOUNDRIES U.S. Inc.

United States of America

 
Total IP 6,427
Total IP incl. subs 7,244 (+ 817 for subs)
Total IP Rank # 160
IP Activity Score 3.9/5.0    1,753
IP Activity Rank # 404
IP AS incl. subs 3.7/5.0    2,234
Parent Entity Globalfoundries Inc.
Dominant Nice Class Scientific and electric apparatu...

Patents

Trademarks

6,425 1
0 0
1 0
0
 
Last Patent 2025 - Stacked trench capacitors and me...
First Patent 1991 - Method for making a superconduct...
Last Trademark 2022 - TRUSTED GAN
First Trademark 2022 - TRUSTED GAN

Subsidiaries

5 subsidiaries with IP (817 patents, 0 trademarks)

6 subsidiaries without IP

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Industry (Nice Classification)

Latest Inventions, Goods, Services

2025 Invention Optical components with one or more embedded bragg reflectors. Structures for an optical compone...
Invention Single ended sense amplifier with current pulse circuit. Embodiments of the disclosure provide m...
2024 Invention Photodetectors with multiple light-absorbing semiconductor layers. Structures for a photonic chip...
Invention Ic structure with mfmis memory cell and cmos transistor. An IC structure includes an MFMIS memory...
Invention Integrated circuit structures having a watermark. Structures for an integrated circuit having a w...
Invention Structures for a field-effect transistor that include a spacer structure. Structures for a field-...
Invention Vertical device triggered silicon control rectifier. The present disclosure relates to semiconduc...
Invention Shielded inductor structures and methods of forming the same. A structure including a first chip ...
Invention Bipolar transistor. The present disclosure relates to semiconductor structures and, more particul...
2023 Invention Stacked trench capacitors and methods of making thereof. Stacked trench capacitors and methods o...
Invention Heterojunction bipolar transistor wafers with backside sub-collector contact. The present disclo...
Invention Waveguide escalators for a photonics chip. Structures for a waveguide escalator, as well as meth...
Invention Iq phase imbalance calibration using sampling clock delay adjustment. A system for phase imbalan...
Invention Nanosheet devices with reduced width inner spacer and method. A structure and method include a t...
Invention High voltage power switch. A power switch, including: a PFET including a gate, a source coupled ...
Invention Photonics chips including a photonic coupler and a photodetector. Structures for a photonics chi...
Invention Structure with barrier-free metal via and metal wire including non-copper conductor, and method t...
Invention Silicon controlled rectifier integrated heterojunction bipolar transistor. The present disclosur...
Invention Fully depleted semiconductor-on-insulator switch with built-in electrostatic discharge protection...
Invention Real-time process margin-based layout optimization. Layout design for an electronic device may b...
Invention Structure and method for inductor with windings having different widths. The disclosure provides...
Invention Structures for a photonics chip that enable external communication. Structures for a photonics c...
Invention Vertical heterojunction bipolar transistor. The present disclosure relates to semiconductor stru...
Invention Memory structure including a low cell supply voltage programming circuit. A disclosed memory str...
Invention Switching memory elements accessed by heterojunction bipolar transistors. Structures that includ...
Invention Silicon control rectifier integrated with a transistor. The present disclosure relates to semico...
Invention Bipolar transistor structure with bounding structure at horizontal end and methods to form same. ...
Invention Hybrid bonding with selectively formed dielectric material. A method for hybrid bonding a first ...
Invention Signal propagation simulation including photonic device-to-photonic device connectivity awareness...
Invention Photonics chips with an integrated semiconductor laser. Structures for a photonics chip that inc...
Invention Photodetectors with a notched light-absorbing layer. Structures for a photonics chip that includ...
Invention High electron mobility transistor with regrown barrier structure. The present disclosure relates...
Invention Device with isolation structures. The present disclosure relates to semiconductor structures and...
Invention Buried interconnect traversing trench isolation. The present disclosure relates to semiconductor...
Invention Nonvolatile memory with isolation structure and method of forming the same. A non-volatile memor...
Invention Silicon controlled rectifiers. The present disclosure relates to semiconductor structures and, m...
Invention Temperature-adaptive gate driver for gan switch. A temperature-adaptive gate driver for a GaN sw...
Invention High electron mobility transistor. The present disclosure relates to semiconductor structures an...
Invention Area-efficient fully depleted semiconductor-on-insulator structure with mixed threshold voltage t...
Invention Compact memory-in-pixel display structure. Disclosed are a pixel and a compact memory-in-pixel di...
Invention Bipolar transistor structures with cavity below extrinsic base and methods to form same. The dis...
Invention Optical switches including a ring resonator. Structures for an optical switch and methods of for...
Invention High-electron-mobility transistor. The present disclosure relates to semiconductor structures an...
Invention Power amplifier with biasing scheme enabling high power operation. A disclosed structure include...
Invention Multi-gate differential power amplifier. A differential power amplifier circuit, including: a fi...
Invention Silicon carbide channel with capping semiconductor having higher charge carrier mobility. The di...
Invention Quantum dot structures. The present disclosure relates to semiconductor structures and, more par...
Invention Power splitters including a tunable multimode interference coupler. Structures for a power split...
Invention Hierarchical memory architecture including on-chip multi-bank non-volatile memory with low leakag...
Invention Integrated circuit structure with diffusion break in p-type field effect transistor region and me...
2022 G/S high-electronic-mobility-transistor (HEMT) semiconductor computer chips fabricated with Gallium n...