GLOBALFOUNDRIES U.S. Inc.

United States of America

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Total IP 6,430
Total IP incl. subs 7,251 (+ 821 for subs)
Total IP Rank # 163
IP Activity Score 3.9/5.0    1,739
IP Activity Rank # 405
IP AS incl. subs 3.7/5.0    2,217
Parent Entity Globalfoundries Inc.
Dominant Nice Class Scientific and electric apparatu...

Patents

Trademarks

6,428 1
0 0
1 0
0
 
Last Patent 2025 - High-voltage schmitt trigger
First Patent 1991 - Method for making a superconduct...
Last Trademark 2022 - TRUSTED GAN
First Trademark 2022 - TRUSTED GAN

Subsidiaries

5 subsidiaries with IP (821 patents, 0 trademarks)

6 subsidiaries without IP

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Industry (Nice Classification)

Latest Inventions, Goods, Services

2025 Invention Cell layouts. The present disclosure relates to semiconductor structures and, more particularly,...
Invention Back-gate controlled power amplifier. The present disclosure relates to semiconductor structures...
Invention Optical components with one or more embedded bragg reflectors. Structures for an optical compone...
Invention Single ended sense amplifier with current pulse circuit. Embodiments of the disclosure provide m...
2024 Invention High-voltage semiconductor device structures. Device structures for a high-voltage semiconductor ...
Invention Semiconductor layers formed by lateral epitaxial growth. Structures that include a semiconductor...
Invention Device structures for a high-voltage semiconductor device. Device structures for a high-voltage s...
Invention Photodetectors with multiple light-absorbing semiconductor layers. Structures for a photonic chip...
Invention Ic structure with mfmis memory cell and cmos transistor. An IC structure includes an MFMIS memory...
Invention Integrated circuit structures having a watermark. Structures for an integrated circuit having a w...
Invention Structures for a field-effect transistor that include a spacer structure. Structures for a field-...
Invention Vertical device triggered silicon control rectifier. The present disclosure relates to semiconduc...
Invention Shielded inductor structures and methods of forming the same. A structure including a first chip ...
Invention Bipolar transistor. The present disclosure relates to semiconductor structures and, more particul...
Invention Structures including a semiconductor layer formed by lateral epitaxial growth. Structures that i...
Invention High-voltage schmitt trigger. In a disclosed Schmitt trigger, an input stage includes a first p-...
Invention Integrated circuit design method and system employing parasitic diode analysis. Disclosed are em...
Invention Structure and method for an inductor having a winding with a first segment connected to two secon...
Invention Compact high power radio frequency (rf) switch. A radio frequency (RF) switch includes a transis...
Invention Structure with two work function metals over conductive bridge, and method to form same. A struc...
Invention Extended drain metal oxide semiconductor (edmos) field effect transistor (fet) with dual thicknes...
Invention Silicon control rectifiers. The present disclosure relates to semiconductor structures and, more...
Invention Crystalline semiconductor layer between bipolar transistor and field effect transistor structures...
Invention Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth ...
Invention Bipolar transistor base structure coupled to field effect transistor gate structure. Embodiments...
Invention Photodetectors with an adjoined slotted waveguiding structure. Structures for a photonics chip t...
Invention Photodetectors with an integrated waveguide core. Structures for a photonics chip that include a...
Invention Transistor triggered silicon control rectifier. The present disclosure relates to semiconductor ...
Invention Device triggered silicon control rectifier. The present disclosure relates to semiconductor stru...
Invention Three dimensional serpentine resistor. A serpentine resistor within a back end of line (BEOL) le...
2023 Invention Stacked trench capacitors and methods of making thereof. Stacked trench capacitors and methods o...
Invention Heterojunction bipolar transistor wafers with backside sub-collector contact. The present disclo...
Invention Waveguide escalators for a photonics chip. Structures for a waveguide escalator, as well as meth...
Invention Iq phase imbalance calibration using sampling clock delay adjustment. A system for phase imbalan...
Invention Nanosheet devices with reduced width inner spacer and method. A structure and method include a t...
Invention High voltage power switch. A power switch, including: a PFET including a gate, a source coupled ...
Invention Photonics chips including a photonic coupler and a photodetector. Structures for a photonics chi...
Invention Structure with barrier-free metal via and metal wire including non-copper conductor, and method t...
Invention Silicon controlled rectifier integrated heterojunction bipolar transistor. The present disclosur...
Invention Fully depleted semiconductor-on-insulator switch with built-in electrostatic discharge protection...
Invention Real-time process margin-based layout optimization. Layout design for an electronic device may b...
Invention Structure and method for inductor with windings having different widths. The disclosure provides...
Invention Structures for a photonics chip that enable external communication. Structures for a photonics c...
Invention Vertical heterojunction bipolar transistor. The present disclosure relates to semiconductor stru...
Invention Memory structure including a low cell supply voltage programming circuit. A disclosed memory str...
Invention Switching memory elements accessed by heterojunction bipolar transistors. Structures that includ...
Invention Silicon control rectifier integrated with a transistor. The present disclosure relates to semico...
Invention Bipolar transistor structure with bounding structure at horizontal end and methods to form same. ...
Invention Photonics chips with an integrated semiconductor laser. Structures for a photonics chip that inc...
Invention Photodetectors with a notched light-absorbing layer. Structures for a photonics chip that includ...
2022 G/S high-electronic-mobility-transistor (HEMT) semiconductor computer chips fabricated with Gallium n...