- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/60 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
Patent holdings for IPC class H10B 41/60
Total number of patents in this class: 17
10-year publication summary
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0
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0
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0
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0
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0
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3
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6
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1
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6
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0
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| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 141952 |
4 |
| Micron Technology, Inc. | 26067 |
4 |
| United Microelectronics Corp. | 4174 |
2 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 41489 |
1 |
| eMemory Technology Inc. | 381 |
1 |
| FlashSilicon Incorporation | 25 |
1 |
| Semiconductor Manufacturing International (Beijing) Corporation | 1032 |
1 |
| Semiconductor Manufacturing International (Shanghai) Corporation | 1773 |
1 |
| STMicroelectronics International N.V. | 2968 |
1 |
| SK Keyfoundry Inc. | 244 |
1 |
| Other owners | 0 |