- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/30 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Patent holdings for IPC class H10B 43/30
Total number of patents in this class: 240
10-year publication summary
|
0
|
0
|
0
|
1
|
4
|
30
|
42
|
52
|
62
|
47
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 10285 |
40 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42549 |
28 |
| Samsung Electronics Co., Ltd. | 145630 |
26 |
| SK Hynix Inc. | 11307 |
20 |
| Micron Technology, Inc. | 26258 |
13 |
| Yangtze Memory Technologies Co., Ltd. | 2618 |
11 |
| United Microelectronics Corp. | 4254 |
10 |
| Macronix International Co., Ltd. | 2561 |
6 |
| Longitude Flash Memory Solutions Ltd. | 277 |
6 |
| Winbond Electronics Corp. | 1276 |
5 |
| Sunrise Memory Corporation | 211 |
5 |
| Semiconductor Energy Laboratory Co., Ltd. | 11388 |
4 |
| Sandisk Technologies Inc. | 4795 |
4 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1376 |
4 |
| Infineon Technologies LLC | 544 |
4 |
| Renesas Electronics Corporation | 6020 |
3 |
| Atomera Incorporated | 224 |
3 |
| eMemory Technology Inc. | 388 |
3 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1382 |
3 |
| Monolithic 3D Inc. | 308 |
3 |
| Other owners | 39 |