- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
Patent holdings for IPC class H10B 51/10
Total number of patents in this class: 383
10-year publication summary
|
0
|
0
|
0
|
0
|
12
|
58
|
72
|
96
|
98
|
42
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48302 |
188 |
| Samsung Electronics Co., Ltd. | 157719 |
68 |
| Micron Technology, Inc. | 27657 |
22 |
| Sandisk Technologies Inc. | 5438 |
18 |
| Kioxia Corporation | 10815 |
12 |
| SK Hynix Inc. | 12486 |
10 |
| Sunrise Memory Corporation | 216 |
8 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1459 |
7 |
| Yangtze Memory Technologies Co., Ltd. | 3306 |
6 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1656 |
5 |
| Semiconductor Energy Laboratory Co., Ltd. | 11821 |
4 |
| Intel Corporation | 47106 |
3 |
| Sandisk Technologies LLC | 1423 |
3 |
| The Regents of the University of California | 20745 |
2 |
| Renesas Electronics Corporation | 5870 |
2 |
| Tokyo Electron Limited | 13807 |
2 |
| Korea Advanced Institute of Science and Technology | 4664 |
2 |
| TetraMem Inc. | 182 |
2 |
| National Yang Ming Chiao Tung University | 384 |
2 |
| Mitsubishi Electric Corporation | 48018 |
1 |
| Other owners | 16 |