- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
Patent holdings for IPC class H10B 51/10
Total number of patents in this class: 286
10-year publication summary
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0
|
0
|
0
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0
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0
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12
|
53
|
59
|
95
|
65
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 43400 |
152 |
| Samsung Electronics Co., Ltd. | 147622 |
49 |
| Micron Technology, Inc. | 26210 |
12 |
| Sandisk Technologies Inc. | 4830 |
12 |
| SK Hynix Inc. | 11484 |
9 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1389 |
5 |
| Sunrise Memory Corporation | 213 |
5 |
| Yangtze Memory Technologies Co., Ltd. | 2739 |
5 |
| Kioxia Corporation | 10441 |
5 |
| Intel Corporation | 47129 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11481 |
3 |
| Sandisk Technologies LLC | 1464 |
3 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1425 |
3 |
| Renesas Electronics Corporation | 5987 |
2 |
| Korea Advanced Institute of Science and Technology | 4403 |
2 |
| The Regents of the University of California | 20087 |
1 |
| Tokyo Electron Limited | 12899 |
1 |
| Huawei Technologies Co., Ltd. | 113853 |
1 |
| Macronix International Co., Ltd. | 2552 |
1 |
| Lam Research Corporation | 5310 |
1 |
| Other owners | 11 |