- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
Patent holdings for IPC class H10B 51/30
Total number of patents in this class: 717
10-year publication summary
|
0
|
0
|
0
|
1
|
28
|
119
|
156
|
181
|
197
|
23
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46813 |
345 |
| Samsung Electronics Co., Ltd. | 152304 |
89 |
| Micron Technology, Inc. | 27221 |
35 |
| Semiconductor Energy Laboratory Co., Ltd. | 11631 |
19 |
| Sandisk Technologies Inc. | 5307 |
18 |
| SK Hynix Inc. | 11996 |
16 |
| Intel Corporation | 46597 |
14 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1510 |
11 |
| Renesas Electronics Corporation | 5882 |
9 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1414 |
9 |
| Versum Materials US, LLC | 661 |
9 |
| Kioxia Corporation | 10586 |
9 |
| International Business Machines Corporation | 62049 |
8 |
| Tokyo Electron Limited | 13452 |
8 |
| Sunrise Memory Corporation | 214 |
8 |
| IMEC VZW | 1725 |
7 |
| TetraMem Inc. | 164 |
6 |
| Ferroelectric Memory GmbH | 80 |
6 |
| Huawei Technologies Co., Ltd. | 118879 |
5 |
| Yangtze Memory Technologies Co., Ltd. | 3083 |
5 |
| Other owners | 81 |