- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 62/852 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
Patent holdings for IPC class H10D 62/852
Total number of patents in this class: 46
10-year publication summary
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0
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0
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0
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1
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0
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0
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2
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3
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13
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21
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| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| GLOBALFOUNDRIES U.S. Inc. | 6394 |
4 |
| Toshiba Corporation | 12732 |
3 |
| The Regents of the University of Michigan | 5051 |
3 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11136 |
2 |
| Toshiba Electronic Devices & Storage Corporation | 2435 |
2 |
| Taiwan-Asia Semiconductor Corporation | 113 |
2 |
| Samsung Electronics Co., Ltd. | 159298 |
1 |
| The Regents of the University of California | 20924 |
1 |
| Toyota Motor Corporation | 36327 |
1 |
| Sumitomo Electric Industries, Ltd. | 16404 |
1 |
| Hon Hai Precision Industry Co., Ltd. | 4021 |
1 |
| Texas Instruments Incorporated | 19622 |
1 |
| Denso Corporation | 25799 |
1 |
| Industrial Technology Research Institute | 5199 |
1 |
| United Microelectronics Corp. | 4530 |
1 |
| Rohm Co., Ltd. | 6916 |
1 |
| Analog Devices, Inc. | 3316 |
1 |
| Fuji Electric Co., Ltd. | 5541 |
1 |
| Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. | 5297 |
1 |
| Northwestern University | 3577 |
1 |
| Other owners | 16 |