• All sections
  • H - Electricity
  • H10D - Inorganic electric semiconductor devices
  • H10D 86/85 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

Patent holdings for IPC class H10D 86/85

Total number of patents in this class: 76

10-year publication summary

0
0
0
1
1
1
17
23
16
11
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
48760
9
Rohm Co., Ltd.
6898
8
Murata Manufacturing Co., Ltd.
25893
6
Qualcomm Incorporated
93172
4
Intel Corporation
46449
4
Texas Instruments Incorporated
19639
4
Boe Technology Group Co., Ltd.
44549
4
Renesas Electronics Corporation
5860
3
TDK Corporation
6960
3
Psemi Corporation
1086
3
Beijing BOE Technology Development Co., Ltd.
4357
3
Samsung Electronics Co., Ltd.
158842
2
SK Hynix Inc.
12640
2
Microchip Technology Incorporated
3353
2
Beijing BOE Sensor Technology Co., Ltd.
496
2
Pragmatic Semiconductor Limited
120
2
SK Keyfoundry Inc.
258
2
Mitsubishi Electric Corporation
48287
1
Xilinx, Inc.
3940
1
Cirrus Logic, Inc.
1801
1
Other owners 10