• All sections
  • H - Electricity
  • H10D - Inorganic electric semiconductor devices
  • H10D 86/85 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

Patent holdings for IPC class H10D 86/85

Total number of patents in this class: 74

10-year publication summary

0
0
0
1
1
1
17
22
15
11
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
48248
8
Rohm Co., Ltd.
6824
8
Murata Manufacturing Co., Ltd.
25722
6
Intel Corporation
47102
4
Texas Instruments Incorporated
19663
4
Boe Technology Group Co., Ltd.
44004
4
Qualcomm Incorporated
91997
3
Renesas Electronics Corporation
5879
3
TDK Corporation
6855
3
Psemi Corporation
1076
3
Beijing BOE Technology Development Co., Ltd.
4185
3
Samsung Electronics Co., Ltd.
157557
2
SK Hynix Inc.
12452
2
Microchip Technology Incorporated
3315
2
Beijing BOE Sensor Technology Co., Ltd.
483
2
Pragmatic Semiconductor Limited
119
2
SK Keyfoundry Inc.
256
2
Mitsubishi Electric Corporation
47971
1
Xilinx, Inc.
3948
1
Cirrus Logic, Inc.
1803
1
Other owners 10