A soft X-ray monochromator that includes a substrate that comprises a polished curved surface; and one or more platelets having one or more corresponding polished surfaces that are optically bonded to the polished curved surface; wherein the one or more platelets are bent to follow a curvature of the polished curved surface.
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
2.
X-RAY FOCUSING WITH WAVELENGTH SELECTION SYSTEMS FOR SEMICONDUCTOR METROLOGY
An x-ray illumination system for use in x-ray based metrology of a sample, the x- ray illumination system includes x-ray energy adjustable optics that comprises a plurality of subsets of one or more x-ray optical elements, different subsets are associated with different x-ray energies out of multitude of selectable and monochromatic x-ray energies; wherein the x-ray energy adjustable optics is arranged to (a) receive an input x-ray beam that is polychromatic or partially monochromatic, and (b) generate a focused monochromatic x-ray beam having a selected x-ray energy, using a selected subset that is associated with the selected x-ray energy, the selected x-ray energy belongs to the multitude of selectable and monochromatic x-ray energies.
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
G21K 5/04 - Irradiation devices with beam-forming means
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
G21K 1/02 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
G01N 23/083 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
H01J 35/14 - Arrangements for concentrating, focusing, or directing the cathode ray
A metrology related radiation source that includes (a) a gas supply unit that includes an outer nozzle that is configured to output a confining gas cloud, and an inner nozzle that is surrounded by the outer nozzle and is configured to outputs a gas puff target in a form of an elongated gas jet that propagates through a hollow core of the confining gas cloud; (b) a laser source that is configured to generate, a pair of laser pulses that comprises (i) a first laser pulse for converting the gas puff target to plasma, and (ii) a second laser pulse for heating the plasma and generating metrology related radiation; and (c) a skimmer nozzle that is configured to evacuate remaining gas that remains following the generation of metrology related radiation.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
4.
ELECTON BEAM SOURCE FOR X-RAY GENERATION FOR SAMPLE EVALUATION
An electron beam source for use in X-ray based sample evaluation, the electron beam source includes (a) an enclosure, (b) a photocathode that is configured to receive a laser beam, to convert the laser beam to a primary electron beam, and to output the primary electron beam within an inner space formed, at least in part, by the enclosure, (c) a diamond unit that comprises a diamond layer that is preceded by a conductive metal layer and is followed by a negative electron affinity surface that is configured to receive the primary electron beam from the inner space, to amplify the primary electron beam to provide an amplified electron beam, and to output the amplified electron beam to an anode aperture; and (d) a bias circuit configured to bias at least one of the photocathode and the diamond amplified photocathode.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
Determining process excursions in a semiconductor processing using unsupervised machine learning on photoelectron emission dataset obtained by XPS or XRF tool. Principal component analysis is applied to the emission dataset and the variances of each principal component is analyzed to thereby select a number of N principal components whose variance is the highest. All data points of the dataset which do not correspond to any of the N principal components are removed from the dataset to obtain a filtered dataset. An emission intensity is then calculated from the filtered dataset and is plotted on a SPC chart to inspect for excursions.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
6.
METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
H01L 21/66 - Testing or measuring during manufacture or treatment
7.
Characterizing and measuring in small boxes using XPS with multiple measurements
A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
A system having local x-ray induced charge compensation capabilities, the system includes low energy electron (LEE) emission source configured to emit LEEs along one or more LEEs paths towards a region of a sample being illuminated by an x-ray beam, the LEEs impinge on the region and reduce a charging of the region due to the illumination by the x- ray beam, wherein each one of the one or more LEEs paths is oriented by a few degrees, to an optical axis of a photoelectron beam that is emitted from the region due the illumination by the x-ray beam.
9.
System and method for measuring a sample by x-ray reflectance scatterometry
A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.
X-ray optics that include (i) achromatic collimating optics that is adapted to collimate an input X-ray beam to provide a collimated X-ray beam; (ii) an adjustable diffraction unit that is adapted to (a) receive the collimated X-ray beam, while being configured according to a current configuration that is associated with a current wavelength selected out of different wavelengths, the current configuration is selected out of different configurations that are associated with the different wavelengths, and (b) filter the collimated X-ray beam to provide a filtered collimated X-ray beam of the current wavelength; and (iii) achromatic focusing optics that is configured to focus the filtered collimated X-ray beam to provide a focused filtered X-ray beam.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
12.
EVALUATING A STRUCTURE HAVING A MICROSCOPIC DIMENSION WITH A LOW ENERGY X-RAY BEAM
A system for evaluating a structure having a microscopic dimension, the system includes: (i) electron optics that is configured to illuminate the structure with an X-ray beam that has an X-ray beam energy that is proximate to but not exclusively a k-edge energy of a chemical element of the structure; (ii) at least one detector out of (i) a X-ray photoelectron spectroscopy (XPS) detector for collecting a XPS signal generated by an illumination of the structure, or (ii) a X-ray fluorescence (XRF) detector for collecting a XRF signal generated by the illumination of the structure; and (iii) a computing device configured to determine, based on least one of the XPS signal or the XRF signal, chemical element information regarding a dose and concentration of the chemical element in the structure.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
13.
METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS
Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
14.
A HIGH BRIGHTNESS PRIMARY X-RAY SOURCE FOR IN-LINE XPS AND XRF METROLOGY
A method for evaluating a sample, the method includes (a) illuminating a liquid metal jet alloyed with aluminum with an electron beam to provide a first x-ray beam; (b) spectral filtering, by a filtering unit, the first x-ray beam to provide a second x-ray beam; (c) illuminating a sample with the second x-ray beam; and (e) detecting x-ray radiation emitted from the sample as a result of the illuminating of the sample.
G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
15.
FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
16.
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
G01N 23/2258 - Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
18.
SECONDARY ION MASS SPECTROSCOPY ADAPTIVE COUNT RATE MODULATION
A method for adaptive secondary ion mass spectroscopy, the method may include (a) adaptively setting a detection parameter that impacts an instantaneous count rate of a detector; (b) scanning an evaluated sample with a focused primary ion beam; (c) sensing, by the detector, secondary ions ejected due to the scanning, to provide detection signals; and (d) analyzing a composition of the evaluated sample based on (i) the detection signals, and (ii) a mapping between values of the detection parameter and the instantaneous count rate of the detector.
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
A method for generating an x-ray beam, the method includes (a) directing an x- ray generating fluid towards a cryogenic x-ray emitting target; (b) freezing, by the cryogenic x-ray emitting target, the x-ray generating fluid to provide a frozen x-ray generating material; and (c) illuminating the frozen x-ray generating material with an electron beam to generate the x-ray beam.
A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
22.
PRODUCTION SOLUTIONS FOR HIGH-THROUGHPUT/PRECISION XPS METROLOGY USING UNSUPERVISED MACHINE LEARNING
Determining process excursions in a semiconductor processing using unsupervised machine learning on photoelectron emission dataset obtained by XPS or XRF tool. Principal component analysis is applied to the emission dataset and the variances of each principal component is analyzed to thereby select a number of N principal components whose variance is the highest. All data points of the dataset which do not correspond to any of the N principal components are removed from the dataset to obtain a filtered dataset. An emission intensity is then calculated from the filtered dataset and is plotted on a SPC chart to inspect for excursions.
A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
H01L 21/66 - Testing or measuring during manufacture or treatment
24.
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
G01N 23/2258 - Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
H01J 49/14 - Ion sourcesIon guns using particle bombardment, e.g. ionisation chambers
H01L 21/66 - Testing or measuring during manufacture or treatment
H01J 49/12 - Ion sourcesIon guns using an arc discharge, e.g. of the duoplasmatron type
XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.
G01N 23/20008 - Constructional details of analysers, e.g. characterised by X-ray source, detector or optical systemAccessories thereforPreparing specimens therefor
G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
H01J 35/24 - Tubes wherein the point of impact of the cathode ray on the anode or anticathode is movable relative to the surface thereof
27.
Mass spectrometer detector and system and method using the same
An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.
Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
09 - Scientific and electric apparatus and instruments
Goods & Services
X-Ray monitoring, measurement and inspection equipment for characterizing dimensional and/or material properties of samples, namely, for measuring and inspecting patterned structures and films in the field of semiconductor manufacturing, and systems comprised of hardware and recorded software for process control of semiconductors manufacturing
30.
Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
31.
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
H01J 49/14 - Ion sourcesIon guns using particle bombardment, e.g. ionisation chambers
H01L 21/66 - Testing or measuring during manufacture or treatment
H01J 49/12 - Ion sourcesIon guns using an arc discharge, e.g. of the duoplasmatron type
G01N 23/2258 - Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.
The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.
XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
35.
Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
36.
METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS
Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.
G01N 23/085 - X-ray absorption fine structure [XAFS], e.g. extended XAFS [EXAFS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01N 23/02 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material
G01N 23/083 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
G01B 15/00 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
37.
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
H01J 49/14 - Ion sourcesIon guns using particle bombardment, e.g. ionisation chambers
H01L 21/66 - Testing or measuring during manufacture or treatment
H01J 49/12 - Ion sourcesIon guns using an arc discharge, e.g. of the duoplasmatron type
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
39.
Methods and systems for measuring periodic structures using multi-angle x-ray reflectance scatterometry (XRS)
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
42.
Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
43.
XPS metrology for process control in selective deposition
XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
44.
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS)
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
G01N 23/201 - Measuring small-angle scattering, e.g. small angle X-ray scattering [SAXS]
H01L 21/66 - Testing or measuring during manufacture or treatment
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology systems comprised of computer hardware and ion beam equipment for measuring physical composition and thickness of material, for use in the semiconductor manufacturing process
46.
Method and system for non-destructive metrology of thin layers
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
47.
MASS SPECTROMETER DETECTOR AND SYSTEM AND METHOD USING THE SAME
An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
H01J 49/14 - Ion sourcesIon guns using particle bombardment, e.g. ionisation chambers
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
H01J 49/26 - Mass spectrometers or separator tubes
50.
Silicon germanium thickness and composition determination using combined XPS and XRF technologies
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
53.
METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
H01J 37/256 - Tubes for spot-analysing by electron or ion beamsMicroanalysers using scanning beams
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
B23Q 17/20 - Arrangements for indicating or measuring on machine tools for indicating or measuring workpiece characteristics, e.g. contour, dimension, hardness
58.
Method and system for non-destructive distribution profiling of an element in a film
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G21K 1/00 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
A method and a system for calibrating an X-ray photoelectron spectroscopy (XPS) measurement are described. The method includes using an X-ray beam to generate an XPS signal from a sample and normalizing the XPS signal with a measured or estimated flux of the X-ray beam. The system includes an X-ray source for generating an X-ray beam and a sample holder for positioning a sample in a pathway of the X-ray beam. A detector is included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. Also included are a flux detector for determining a measured or estimated flux of the X-ray beam and a computing system for normalizing the XPS signal with the measured or estimated flux of the X-ray beam.
An electronic device. The device comprises a printed circuit board, a multilayered capacitor formed on the printed circuit board, and a conductive strip disposed on a top surface of the printed circuit board. The conductive strip interconnects to the multilayered capacitor. The multilayered capacitor includes a plurality of capacitance plates and a plurality of dielectric layers wherein each dielectric layer is disposed between two of the capacitance plates. The printed circuit board further comprises ground plated sidewalls disposed about the printed circuit board. Each of the ground plated sidewalls extends from a top surface to a bottom surface of the printed circuit board.
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
According to one aspect of the invention a robust anode structure and methods of making and using said structure to produce ionizing radiation are disclosed. An ionizing radiation producing layer is bonded to the target side of a highly conductive diamond substrate, by a metal carbide layer. The metal carbide layers improves the strength and durability of the bond, thus improving heat removal from the anode surface and reducing the risk of delaminating the ionizing radiation producing layer, thus reducing degradation and extending the anode's life. A smoothing dopant is alloyed into the radiation producing layer to facilitate keeping the layer surface smooth, thus improving the quality of the x-ray beam emitted from the anode. In an embodiment, the heat sink comprises a metal carbide skeleton cemented diamond material. In another embodiment, the heat sink is bonded to the diamond substrate structure in a high temperature reactive brazing process.
According to one aspect of the present invention, a substrate processing system is provided. The system may include a chamber wall enclosing a chamber, a substrate support positioned within the chamber to support a substrate, an electromagnetic radiation source to emit electromagnetic radiation onto the substrate on the substrate support, the electromagnetic radiation causing photoelectrons to be emitted from a material on the substrate, an analyzer to capture the photoelectrons emitted from the substrate, and a magnetic field generator to generate a magnetic field within the chamber and guide the photoelectrons from the substrate to the analyzer.
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron species or other atom-specific characteristic electron species emitted by the structure when bombarded with photons. A predictive intensity function that is dependent on the thickness of a layer is determined for each photoelectron species. A ratio of two predictive intensity functions is formulated, and the ratio is iterated to determine the thickness of a layer of the structure. According to one embodiment, two photoelectron species may be measured from a single layer to determine a thickness of that layer. According to another embodiment, two photoelectron species from different layers or from a substrate may be measured to determine a thickness of a layer.
According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The method may include providing a semiconductor substrate having a surface and a plurality of features on the surface, each feature being positioned on the surface at a first respective point in a first coordinate system, plotting the position of each feature at a second respective point in a second coordinate system; and generating a translation between the first and the second coordinate systems. The generating of the translation may include calculating an offset between the first and the second coordinate systems. The calculating of the offset may include calculating an offset distance between a reference point of the first coordinate system and a reference point of the second coordinate system and calculating an offset angle between an axis of the first coordinate system and an axis of the second coordinate system.
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology systems comprised of computer hardware and x-ray
equipment for measuring physical composition and thickness
of thin films, for use in the semiconductor manufacturing
process.
