Provided is a method for preparing diiodosilane including: reacting a compound represented by the following Chemical Formula 1 with iodine (I2) to prepare diiodosilane (SiH2I2), and the method may secure process safety and productivity and provide high-purity diiodosilane:
Provided is a method for preparing diiodosilane including: reacting a compound represented by the following Chemical Formula 1 with iodine (I2) to prepare diiodosilane (SiH2I2), and the method may secure process safety and productivity and provide high-purity diiodosilane:
wherein R and A are as defined in the specification.
A cyclosilazane compound, a composition for depositing a silicon-containing thin film including the same, and a method of producing a silicon-containing thin film using the same are described. The silicon-containing thin film produced using the cyclosilazane compound as a silicon precursor has both excellent chemical and thermal stability and has a low dielectric constant. Therefore, it may be usefully applied as an insulating film of a semiconductor device, in particular, a spacer of a semiconductor miniaturization process.
Provided are a silicon compound, a composition for depositing a silicon-containing thin film including the silicon compound, and a method of producing a silicon-containing thin film using the silicon composition. Since the silicon-containing thin film produced using the silicon compound as a silicon precursor has both excellent chemical and thermal stability and has a low dielectric constant, it may be usefully applied as an insulating film of a semiconductor device, in particular, a spacer of a semiconductor miniaturization process.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
4.
SILICON-BEARING ENCAPSULATION FILM COMPOSITION INCLUDING SILAZANE COMPOUND AND METHOD FOR MANUFACTURING SILICON-BEARING ENCAPSULATION FILM USING SAME
The present invention provides a silicon-bearing encapsulation film composition including a silazane compound and a method for manufacturing a silicon-bearing film using same, wherein the film blocks moisture and oxygen to prevent the deterioration of organic light-emitting diodes. The silicon-bearing encapsulation film composition according to the present invention can exhibit an excellent deposition rate due to the high vapor pressure thereof, and can provide a high-quality silicon-bearing encapsulation film with high purity and high durability.
C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
5.
INDIUM COMPOUND, INDIUM-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING SAME, AND INDIUM-CONTAINING THIN FILM MANUFACTURING METHOD
The present invention provides a novel indium compound, a preparation method therefor, an indium-containing thin film deposition composition comprising same, and an indium-containing thin film manufacturing method employing same. A high quality indium-containing thin film, which contains uniform components, can be manufactured to have a stable deposition rate.
The present invention provides a method for manufacturing a pellicle and a pellicle for extreme ultraviolet exposure manufactured by the method, the method comprising a step of forming a metal silicide capping layer by using a silicon precursor and a metal precursor, wherein the pellicle can exhibit excellent performance in terms of transmittance and thermal emissivity.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
7.
SILICON COMPOUNDS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
Silicon compounds may be represented by the following formula:
Silicon compounds may be represented by the following formula:
Silicon compounds may be represented by the following formula:
Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.
C07F 7/08 - Compounds having one or more C—Si linkages
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
8.
THIN-FILM FORMING COMPOSITION INCLUDING ALUMINUM COMPOUND, METHOD OF FORMING THIN FILM BY USING THE THIN-FILM FORMING COMPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A thin-film forming composition includes an aluminum compound represented by General Formula (1).
A thin-film forming composition includes an aluminum compound represented by General Formula (1).
A thin-film forming composition includes an aluminum compound represented by General Formula (1).
In General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
9.
NOVEL ALKOXYAMINOSILYLAMINE COMPOUND, PREPARATION METHOD THEREFOR, SILICON-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING SAME, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM BY USING SAME
The present invention relates to a novel alkoxyaminosilylamine compound, a preparation method therefor, a silicon-containing thin film deposition composition comprising same, and a method for manufacturing a silicon-containing thin film by using same. The alkoxyaminosilylamine compound according to the present invention is thermally stable and has high volatility and reactivity, and thus is very useful for stably manufacturing a silicon-containing thin film having excellent properties in a wide temperature range.
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
10.
METHOD FOR MANUFACTURING RUTHENIUM-CONTAINING THIN FILM AND RUTHENIUM-CONTAINING THIN FILM MANUFACTURED THEREBY
The present invention provides a method for manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured thereby. The method for manufacturing a ruthenium-containing thin film of the present invention can easily produce a high-purity thin film through a simple process by using a ruthenium compound and a specific reaction gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
The present invention relates to a composition for depositing an antimony-containing thin film, and a method for manufacturing an antimony-containing thin film by using same, the composition comprising an antimony compound, which can be effectively used as a precursor of an antimony-containing thin film. The antimony compound according to an implementation is in a liquid state at room temperature, and thus has excellent storability and handling and has high reactivity, thereby enabling a metal thin film to be efficiently formed.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
12.
NOVEL AMINOALKOXYSILYLAMINE COMPOUND, PREPARATION METHOD THEREFOR, AND SILICON-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING SAME
The present invention relates to a novel aminoalkoxysilylamine compound, a preparation method therefor, a silicon-containing thin film deposition composition comprising same, and a method for manufacturing a silicon-containing thin film by using same. The aminoalkoxysilylamine compound according to the present invention is thermally stable and has high volatility and reactivity, and thus is very useful for stably manufacturing a silicon-containing thin film having excellent properties in a wide temperature range.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
13.
COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM AND SILICON-CONTAINING THIN FILM MANUFACTURED USING SAME
The present invention relates to a composition, containing a fluoroaminosilane compound as a precursor, for depositing a silicon-containing thin film and a method for manufacturing a silicon-containing thin film using same. The silicon-containing thin film manufactured therefrom has not only excellent chemical and thermal stability but also a sufficiently low dielectric constant, and thus is expected to be usefully applied as an insulating film for a semiconductor device, especially as an insulating film for a spacer.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
14.
FLUORODISILAZANE COMPOUND, COMPOSITION COMPRISING SAME FOR DEPOSITING SILICON-CONTAINING THIN FILM, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING SAME
The present invention relates to a fluorodisilazane compound, a composition comprising same for depositing a silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using same. The silicon-containing thin film produced from the fluorodisilazane compound according to the present invention exhibits excellent chemical and thermal stability, as well as a low dielectric constant, and thus can be advantageously applied as an insulating layer in semiconductor devices, especially as a spacer in semiconductor miniaturization processes.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
15.
CYCLODISILAZANE COMPOUND, COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM COMPRISING SAME, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING SAME
The present invention relates to a cyclodisilazane compound, a composition for depositing a silicon-containing thin film comprising same, and a method for manufacturing a silicon-containing thin film using same, wherein the cyclodisilazane compound according to the present invention is a thermally stable and highly reactive and volatile compound and is in a liquid state at room temperature and at a pressure that allows for easy handling, and can form a high-purity silicon-containing thin film having excellent physical and electrical properties through various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
16.
METHOD FOR PREPARING RUTHENIUM-CONTAINING THIN FILM
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
17.
COMPOSITION FOR DEPOSITING THIN FILM CONTAINING METAL COMPOUND, METHOD FOR MANUFACTURING METAL-CONTAINING THIN FILM USING SAME, AND METAL-CONTAINING THIN FILM MANUFACTURED BY USING SAME
The present invention relates to a metal-containing composition for depositing thin film containing a metal compound, a method for manufacturing a metal-containing thin film employing same, and a metal-containing thin film manufactured by using same, and the present invention enables manufacturing a high-quality metal-containing thin film that has uniform components deposited at an improved rate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
18.
METHOD FOR MANUFACTURING PELLICLE WITH METAL SILICIDE CAPPING LAYER AND PELLICLE MANUFACTURED THEREBY
The present invention provides a method for manufacturing a pellicle and a pellicle for extreme ultraviolet exposure manufactured by the method, the method comprising a step of forming a metal silicide capping layer by using a silicon precursor and a metal precursor, wherein the pellicle can exhibit excellent performance in terms of transmittance and thermal emissivity.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
19.
INDIUM COMPOUND, INDIUM-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING SAME, AND INDIUM-CONTAINING THIN FILM MANUFACTURING METHOD
The present invention provides a novel indium compound, a preparation method therefor, an indium-containing thin film deposition composition comprising same, and an indium-containing thin film manufacturing method employing same. A high quality indium-containing thin film, which contains uniform components, can be manufactured to have a stable deposition rate.
The present invention provides a silicon-bearing encapsulation film composition including a silazane compound and a method for manufacturing a silicon-bearing film using same, wherein the film blocks moisture and oxygen to prevent the deterioration of organic light-emitting diodes. The silicon-bearing encapsulation film composition according to the present invention can exhibit an excellent deposition rate due to the high vapor pressure thereof, and can provide a high-quality silicon-bearing encapsulation film with high purity and high durability.
C07F 7/16 - Preparation thereof from silicon and halogenated hydrocarbons
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
21.
SILICON PRECURSOR HAVING A HETEROCYCLIC GROUP, COMPOSITION FOR DEPOSITING A SILICON-CONTAINING LAYER COMPRISING THE SAME AND METHOD OF DEPOSITING A SILICON-CONTAINING LAYER USING THE SAME
Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
3 may be an alkyl group of 1˜6 carbon atoms.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
23.
Iodine-containing metal compound and composition for depositing thin film including the same
Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
24.
METHOD FOR MANUFACTURING EUV PELLICLE ON BASIS OF MULTILAYER MEMBRANE STRUCTURE CONTAINING CAPPING LAYER COMPRISING METAL NANO-ISLANDS
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
DNF CO.,LTD. (Republic of Korea)
Inventor
Han, Hee
Ahn, Chi Won
Lee, Yong Hee
Lee, Sang Ick
Byun, Tae Seok
Jeon, Sang Yong
Kwone, Yong Hee
Lee, Sang Chan
Abstract
Provided in one embodiment of the present invention is a pellicle membrane capable of minimizing light loss while having thermal and durability properties. A method for manufacturing an EUV pellicle on the basis of a multilayer membrane structure containing a capping layer comprising metal nano-islands, according to an embodiment of the present invention, comprises: a first step of preparing a silicon wafer, forming a first thin film layer on the upper surface of the wafer, and forming a second thin film layer on the lower surface of the wafer; a second step of forming, on the upper surface of the first thin film layer, a core layer, which is transparent so that extreme ultraviolet rays can pass therethrough; a third step of forming a third thin film layer on the upper surface of the core layer, and forming a fourth thin film layer on the lower surface of the second thin film layer; a fourth step of depositing a metal precursor on the upper surface of the third thin film layer, thereby forming a metal pattern layer, which has a predetermined pattern; a fifth step of forming, on the metal pattern layer, a capping layer, which reduces the reflectance of extreme ultraviolet rays incident on the core layer; a sixth step of forming a fifth thin film layer on the upper surface of the capping layer, and forming a sixth thin film layer on the lower surface of the fourth thin film layer; a seventh step of patterning a thin film layer-coupled body, which is a coupled body of the second thin film layer, the fourth thin film layer and the sixth thin film layer; an eighth step of etching the wafer in the patterned shape of the thin film layer-coupled body; and a ninth step of etching one region of the first thin film layer in the shape of the etched region on the lower surface of the wafer, and removing, by means of etching, the fifth thin film layer and the sixth thin film layer, thereby forming a pellicle membrane.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
25.
Indium compound, method of producing the same, composition for depositing indium-containing thin film, and indium-containing thin film
Provided are an indium compound, a method of producing the same, a composition for depositing an indium-containing thin film including the same, and a method of producing an indium-containing thin film using the same. The provided indium compound has excellent thermal stability, high volatility, and improved vapor pressure, thereby producing an indium-containing thin film having a uniform thickness with an improved deposition speed by adopting the indium compound.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
26.
Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same
Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to: a molybdenum compound; a method for preparing same; a molybdenum-containing thin film deposition composition comprising same; and a method for manufacturing a molybdenum-containing thin film using same. The molybdenum compound of the present invention has excellent thermal stability, high volatility, and enhanced vapor pressure, and thus may be employed to manufacture a molybdenum-containing thin film having a uniform thickness at an enhanced deposition rate.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a molybdenum compound, a method for preparing same, a composition comprising same for depositing a molybdenum film-containing thin film, and a method for manufacturing a molybdenum-containing thin film by using same. The employment of the molybdenum compound of the present invention having excellent thermal stability, high volatility, and improved vapor pressure can manufacture a molybdenum-containing thin film with a uniform thickness at an improved deposition rate.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
30.
Atomic layer etching method and semiconductor device manufacturing method using the same
An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula
4 alkyl group, and N is nitrogen.
Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
32.
Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor
The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H10K 102/00 - Constructional details relating to the organic devices covered by this subclass
33.
Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same
Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
C01B 33/18 - Preparation of finely divided silica neither in sol nor in gel formAfter-treatment thereof
C01B 21/068 - Binary compounds of nitrogen with metals, with silicon, or with boron with silicon
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
36.
Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same
Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
37.
NOVEL SILYLCYCLODISILAZANE COMPOUND AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
38.
Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
39.
Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same
Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
40.
Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom
Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same
Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same
Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C01B 33/18 - Preparation of finely divided silica neither in sol nor in gel formAfter-treatment thereof
C01B 21/068 - Binary compounds of nitrogen with metals, with silicon, or with boron with silicon
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C07F 11/00 - Compounds containing elements of Groups 6 or 16 of the Periodic Table
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 27/108 - Dynamic random access memory structures
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
The present invention relates to a method of manufacturing a cobalt containing thin film. According to the present invention, it is possible to provide a capping layer which is deposited on a metal wiring at a high deposition rate and planarized without deforming a shape of the cavity or a shape of the metal wiring due to a high aspect ratio in a highly integrated semiconductor device. Further, according to the present invention, it is possible to more improve the reliability of the metal wiring by providing a high-density, high-purity cobalt containing thin film by remarkably improving gap fill characteristics.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
47.
COMPOSITION FOR DEPOSITION OF SILICON-CONTAINING THIN FILM, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM BY USING SAME
The present invention relates to: a composition for deposition of a silicon-containing thin film, comprising a trisilylamine compound; and a method for manufacturing a silicon-containing thin film by using the same and, more specifically, provides: a composition for deposition of a silicon-containing thin film, comprising a trisilylamine compound, which is capable of forming a silicon-containing thin film at a very excellent deposition rate at a low temperature, so as to be effectively usable as a precursor of a silicon-containing thin film and a display packaging material; and a method for manufacturing a silicon-containing thin film by using the same.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
48.
Method of forming tin-containing material film and method of synthesizing a tin compound
A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I):
4 are each independently a C1 to C4 linear or branched alkyl group.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
50.
METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM, AND RUTHENIUM-CONTAINING THIN FILM PRODUCED THEREBY
The present invention provides a method for producing a ruthenium-containing thin film and a ruthenium-containing thin film produced thereby. The method for producing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and a specific reaction gas, and is thereby capable of easily producing a high-purity thin film by means of a simple process.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
51.
METAL TRIAMINE COMPOUND, METHOD FOR PREPARING SAME, AND COMPOSITION CONTAINING SAME FOR DEPOSITING METAL-CONTAINING THIN FILM
The present invention relates to a novel metal triamine compound, a method for preparing the same, a composition containing the same for depositing a metal-containing thin film, and a method for forming a metal-containing thin film by using the same. The metal triamine compound of the present invention has excellent reactivity, thermal stability, high volatility, and high storage stability, and thus a high-density and high-purity metal-containing thin film can be easily formed by using the metal triamine compound as a metal-containing precursor.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
52.
DISILYLAMINE COMPOUND, METHOD FOR PREPARING SAME AND SILICON-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING SAME
The present invention relates to a novel disilylamine compound, a method for preparing same and a silicon-containing thin film deposition composition comprising same. A disilylamine compound of the present invention shows excellent reactivity, thermal stability and high volatility and thus enables preparation of a high-quality silicon-containing thin film when used for a silicon-containing precursor.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
SILICON-CONTAINING THIN FILM DEPOSITION COMPOSITION COMPRISING DISILYLAMINE COMPOUND AND METHOD FOR PREPARING SILICON-CONTAINING THIN FILM BY MEANS OF SAME
The present invention relates to a silicon-containing thin film deposition composition comprising a disilylamine compound and a method for preparing a silicon-containing thin film by means of same. A silicon-containing thin film deposition composition of the present invention enables preparation of a high-quality silicon-containing thin film by means of comprising as a silicon precursor a disilylamine compound which shows excellent reactivity, thermal stability and high volatility.
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
54.
SILYLAMINE COMPOUND, COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM CONTAINING THE SAME, AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE COMPOSITION
Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
55.
COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM CONTAINING BIS(AMINOSILYL)ALKYLAMINE COMPOUND AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
56.
COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
Provided are a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
57.
Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same
An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
59.
METHOD FOR MANUFACTURING SILICON NITRIDE THIN FILM USING PLASMA ATOMIC LAYER DEPOSITION
The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature.
An anti-glare glass of the present invention has excellent anti-glare properties and visibility by forming glass in which polysilazane-derived surface unevenness are applied to a glass surface without mixing a heterogeneous element, and has remarkably improved wear resistance and durability since the polysilazane is changed for glass on the glass surface by thermal treatment.
C03C 17/32 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
C03C 17/02 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with glass
C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
61.
TRANSITION METAL COMPOUND, PREPARATION METHOD THEREFOR, AND COMPOSITION FOR DEPOSITING TRANSITION METAL-CONTAINING THIN FILM, CONTAINING SAME
The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C01B 21/068 - Binary compounds of nitrogen with metals, with silicon, or with boron with silicon
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
The present invention relates to a fire extinguisher management system. The fire extinguisher management system of the present invention comprises: a fire extinguisher management device identified by a near field communication (NFC) tag attached to a fire extinguisher, and detecting a velocity change and an angular velocity according to a fire extinguisher inspection operation of a manager; a manager mobile for receiving, from the fire extinguisher management device, fire extinguisher inspection operation information through NFC tagging, and determining whether the received fire extinguisher inspection operation information corresponds to a pre-stored, regulated inspection operation so as to identify whether the fire extinguisher inspection operation is normally performed; and a management server for monitoring the state of the fire extinguisher by using the fire extinguisher inspection operation information received from the manager mobile, and determining a fire extinguisher inspection time and providing an inspection schedule for at least one fire extinguisher to be inspected by the manager mobile to the manager mobile.
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
H04W 4/02 - Services making use of location information
65.
FIRE EXTINGUISHER MANAGEMENT APPARATUS AND FIRE EXTINGUISHER
The present invention relates to a fire extinguisher management apparatus and a fire extinguisher equipped with the same, the fire extinguisher management apparatus being mounted to a fire extinguisher and comprising: a reception unit for receiving a near field communication (NFC) signal transmitted by a mobile; a transmission unit for transmitting an NFC signal to the mobile; an acceleration sensor for detecting changes in velocity per unit of time with respect to X, Y, and Z axes, which correspond to an operation of inspecting the fire extinguisher by a manager; a gyro sensor for detecting angular velocity per unit of time, which corresponds to the operation of inspecting the fire extinguisher by the manager; an inspection information management unit for storing signals received from the acceleration sensor and the gyro sensor as fire extinguisher inspection state information; a manager approval unit for providing the fire extinguisher inspection state information to a manager mobile when an NFC-tagged mobile is identified as the manager mobile through identification information of the mobile, received by the reception unit; and a power supply unit for supplying power to each element.
A62C 37/50 - Testing or indicating devices for determining the state of readiness of the equipment
A62C 37/36 - Control of fire-fighting equipment an actuating signal being generated by a sensor separate from an outlet device
A62C 11/00 - Portable extinguishers with manually-operated pumps
G08B 21/02 - Alarms for ensuring the safety of persons
G08B 25/10 - Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using wireless transmission systems
G08B 3/10 - Audible signalling systemsAudible personal calling systems using electric transmissionAudible signalling systemsAudible personal calling systems using electromagnetic transmission
G08B 5/00 - Visible signalling systems, e.g. personal calling systems, remote indication of seats occupied
The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si-N bond under the condition of lower power and film-forming temperature, by applying an amino silane derivative having a specific Si-N bond to a plasma atomic layer deposition method.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
67.
Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
68.
Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same
Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.
C08G 8/04 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
C09D 161/06 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
70.
Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si-N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si-N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
72.
NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
73.
NOVEL CYCLODISILAZANE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.
C08G 61/02 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
C08G 61/10 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
C08L 65/00 - Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chainCompositions of derivatives of such polymers
75.
Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
76.
NOVEL AMINO-SILYL AMINE COMPOUND, METHOD FOR PERPARING THE 'SAME AND SILICON-CONTAINING THIN-FILM USING THE SAME
Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film haying high purity and excellent physical and electrical properties by various deposition methods.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
77.
SILICONE BASED WATER REPELLENT COATING COMPOSITION FOR MODIFYING THE SURFACE OF NON-POROUS SUBSTRATE
Disclosed is a silicon based water repellent coating compositon that can increase an adhesive property on the surface of substrate, such as a glass, a glass lens, a mirror, a plastic, a plastic lens, a metal, a type of ceramic, a porcelain, a pottery, and acrylic panel, having excellent water repellency and durability of the water repellent, and also includes polysilazane, polysiloxane, and solvent.
C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes
C09K 3/18 - Materials not provided for elsewhere for application to surface to minimize adherence of ice, mist or water theretoThawing or antifreeze materials for application to surfaces
78.
POLYSILAZANE TREATING SOLVENT AND METHOD FOR TREATING POLYSILAZANE USING THE SAME
Provided are a polysilazane treating solvent including one or more compound(s) selected from toluene and heptane and a (Cl2-C16)isoparaffin mixture, and a method for treating polysilazane using the same. More specifically, provided are a polysilazane treating solvent capable of chemically removing unwanted polysilazane coat film formed on a substrate, which may result in a severe problem in the semiconductor process if let alone, and a method for treating polysilazane using the same.
The present invention relates to a precursor compound used for vapor -depositing an aluminum film on a substrate by means of chemical vapor deposition, and a process for preparing the compound. The present invention provides an organometallic complex defined by Chemical Formula 1, and a process for preparing the same. H2AlBH4: Ln In the Formula, L is a Lewis base, an aminic organic compound which can provide unshared electron pair to the center of aluminum metal, such as a heterocyclic amine or an alkylamine, and n is an integer of 1 or 2.
The present invention relates to synthesis method of a precursor compound to deposit aluminum films on the substrate by chemical vapor deposition, and it provides the synthesis method of a compound defined as Formula 1 below. H2AlBH4 :N (CH3) 3
patents
