Dowa Holdings Co., Ltd.

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        Patent 64
        Trademark 14
Jurisdiction
        World 40
        United States 30
        Europe 5
        Canada 3
Owner / Subsidiary
[Owner] Dowa Holdings Co., Ltd. 78
Dowa Electronics Materials Co., Ltd. 7
Date
2025 April 2
2025 March 3
2025 February 1
2025 January 2
2025 (YTD) 8
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IPC Class
H01M 4/36 - Selection of substances as active materials, active masses, active liquids 13
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties 9
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries 7
H01M 4/02 - Electrodes composed of, or comprising, active material 6
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy 6
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NICE Class
09 - Scientific and electric apparatus and instruments 9
01 - Chemical and biological materials for industrial, scientific and agricultural use 6
06 - Common metals and ores; objects made of metal 4
11 - Environmental control apparatus 4
02 - Paints, varnishes, lacquers 2
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Status
Pending 8
Registered / In Force 70

1.

METHOD FOR PRODUCING REGENERATED POSITIVE ELECTRODE MATERIAL PRECURSOR AND REGENERATED POSITIVE ELECTRODE MATERIAL, AND METHOD FOR USING REGENERATED POSITIVE ELECTRODE MATERIAL

      
Application Number JP2024035766
Publication Number 2025/079549
Status In Force
Filing Date 2024-10-07
Publication Date 2025-04-17
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • AKITA UNIVERSITY (Japan)
Inventor
  • Yodose Tatsuya
  • Watanabe Ryoei
  • Kumagai Seiji
  • Abe Yusuke

Abstract

Provided is a method for producing a regenerated positive electrode material precursor from a lithium-ion secondary cell that is an object to be processed, the method comprising performing a heat treatment step, a crushing step, a classification and sorting step, a magnetic separation step, an acid leaching step, an iron removal step, an ion exchange step, an alkali treatment step, and a washing step on the lithium-ion secondary cell that is the object to be processed.

IPC Classes  ?

  • C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
  • C01G 53/00 - Compounds of nickel
  • C22B 1/00 - Preliminary treatment of ores or scrap
  • C22B 1/02 - Roasting processes
  • C22B 3/06 - Extraction of metal compounds from ores or concentrates by wet processes by leaching in inorganic acid solutions
  • C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
  • C22B 3/44 - Treatment or purification of solutions, e.g. obtained by leaching by chemical processes
  • H01M 10/54 - Reclaiming serviceable parts of waste accumulators

2.

EXHAUST CYLINDER AND GAS CARBURIZING FURNACE

      
Application Number JP2024035566
Publication Number 2025/075128
Status In Force
Filing Date 2024-10-04
Publication Date 2025-04-10
Owner
  • TOYOTA SCHOOL FOUNDATION (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Okumiya Masahiro
  • Hibino Yoshihiro
  • Takemoto Shinichi
  • Hidaka Yoshinori

Abstract

22222O. The gas carburizing furnace (2) has the exhaust cylinder (1).

IPC Classes  ?

  • F27D 17/20 - Arrangements for treatment or cleaning of waste gases
  • B01D 53/86 - Catalytic processes
  • B01J 27/20 - Carbon compounds
  • C01B 32/05 - Preparation or purification of carbon not covered by groups , , ,

3.

HIGHLY HEAT-RESISTANT Sm-Fe-N-BASED MAGNETIC POWDER AND METHOD FOR PRODUCING SAME

      
Application Number JP2024032977
Publication Number 2025/063149
Status In Force
Filing Date 2024-09-13
Publication Date 2025-03-27
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
  • Yamada Tomoya
  • Michiaki Yoshiyuki
  • Kumon Shoichi
  • Sato Kimitaka
  • Yamaguchi Wataru
  • Hosokawa Akihide
  • Takagi Kenta

Abstract

5050 in the volume-based particle size distribution by the laser diffraction scattering method of, for example, 0.5-5.0 μm (inclusive). As the alkaline earth metal element Ae, for example, one or more elements selected from Mg and Ca can be employed. The coating layer can be formed by performing co-sputtering of Al and Ae using, for example, a sputtering film forming device.

IPC Classes  ?

  • B22F 1/17 - Metallic particles coated with metal
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
  • B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
  • C22C 21/06 - Alloys based on aluminium with magnesium as the next major constituent
  • C22C 23/02 - Alloys based on magnesium with aluminium as the next major constituent
  • C22C 38/00 - Ferrous alloys, e.g. steel alloys
  • H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
  • H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2

4.

DOWA

      
Serial Number 99079668
Status Pending
Filing Date 2025-03-12
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ? 06 - Common metals and ores; objects made of metal

Goods & Services

metals in powder form for use in industry

5.

DOWA

      
Application Number 019153044
Status Pending
Filing Date 2025-03-07
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 09 - Scientific and electric apparatus and instruments

Goods & Services

Battery material, namely silver oxide, silver powder, silver oxide powder, zinc powder, nickel powder, metal powder, ferrite powder,and compositions thereof. Laboratory apparatus and instruments; photographic machines and apparatus; cinematographic machines and apparatus; optical machines and apparatus; measuring or testing machines and instruments; power distribution or control machines and apparatus; rotary converters; phase modifiers; solar batteries; batteries and cells; electric or magnetic meters and testers; electric wires and cables; telecommunication machines and apparatus; personal digital assistants; electronic machines, apparatus and their parts; semi-conductor elements; electronic circuits, not including those recorded with computer programs; magnetic cores; resistance wires; electrodes, other than welding electrodes or medical electrodes; circuit board for power modules.

6.

METHOD FOR TREATING LITHIUM-ION-CONTAINING AQUEOUS SOLUTION

      
Application Number JP2024027048
Publication Number 2025/028499
Status In Force
Filing Date 2024-07-29
Publication Date 2025-02-06
Owner
  • HIROSAKI UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Sasaki Kazuya
  • Shinmura Kiyoto
  • Sato Kimitaka
  • Kato Shogo

Abstract

[Problem] To efficiently obtain, from a lithium-ion-containing aqueous solution containing anions, a lithium-ion-containing aqueous solution which has a reduced content of anions other than hydroxide ions. [Solution] This method for treating lithium-ion-containing aqueous solution uses an electrodialyzer equipped with a raw-solution tank separated from adjacent tanks on both sides by a cation-exchange membrane and an anion-exchange membrane respectively, a first adjoining tank which adjoins the raw-solution tank with the cation-exchange membrane interposed therebetween, and a second adjoining tank which adjoins the raw-solution tank with the anion-exchange membrane interposed therebetween, wherein: a lithium-ion-containing aqueous solution which contains lithium ions, cations other than lithium ions, and anions is put in the raw-solution tank; water or an aqueous solution is put in the first adjoining tank and the second adjoining tank; a voltage is applied between a cathode inside the first adjoining tank and an anode inside the second adjoining tank; and, while the pH of the liquid inside the raw-solution tank is kept at 10.5 or higher, lithium ions inside the raw-solution tank are caused to move into the first adjoining tank through the cation-exchange membrane.

IPC Classes  ?

  • C02F 1/469 - Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
  • B01D 61/44 - Ion-selective electrodialysis

7.

Gd-Co-BASED METALLIC POWDER, METHOD FOR PRODUCING SAME, ELECTROCONDUCTIVE MOLDED BODY, AND THERMOELECTRIC CONVERSION ELEMENT

      
Application Number JP2024024980
Publication Number 2025/023024
Status In Force
Filing Date 2024-07-10
Publication Date 2025-01-30
Owner
  • THE UNIVERSITY OF TOKYO (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Sakai Akito
  • Nakatsuji Satoru
  • Sato Kimitaka
  • Kumon Shoichi
  • Kato Shogo

Abstract

555 as a main component.

IPC Classes  ?

  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
  • B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
  • C22C 1/00 - Making non-ferrous alloys
  • C22C 1/02 - Making non-ferrous alloys by melting
  • C22C 1/04 - Making non-ferrous alloys by powder metallurgy
  • C22C 1/047 - Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
  • C22C 19/07 - Alloys based on nickel or cobalt based on cobalt

8.

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SINGLE CRYSTAL AlN PRODUCTION APPARATUS

      
Application Number 18836855
Status Pending
Filing Date 2023-02-20
First Publication Date 2025-01-30
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS Co., Ltd. (Japan)
Inventor
  • Fukuyama, Hiroyuki
  • Ohtsuka, Makoto
  • Adachi, Masayoshi
  • Miyata, Rintaro
  • Watanabe, Yasuhiro

Abstract

Provided are a method of producing single crystal AlN, single crystal AlN, and a single crystal AlN production apparatus with which single crystal AlN can be cheaply and continuously produced. The method of producing single crystal AlN includes a melt formation step of heating and melting an alloy to form a melt of the alloy and a deposition step of cooling a portion of the melt and providing a temperature gradient in the melt while causing deposition of single crystal AlN. In the deposition step, a nitrogen-containing gas is brought into contact with a high-temperature portion of the melt and a single crystal AlN seed crystal or a substrate for crystal growth is held in a low-temperature portion of the melt so as to continue to take nitrogen into the melt in the high-temperature portion while causing deposition of single crystal AlN.

IPC Classes  ?

  • C30B 19/12 - Liquid-phase epitaxial-layer growth characterised by the substrate
  • C30B 19/06 - Reaction chambersBoats for supporting the meltSubstrate holders
  • C30B 19/10 - Controlling or regulating
  • C30B 29/40 - AIIIBV compounds
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

9.

ALL-SOLID-STATE BATTERY CELL, SOLID ELECTROLYTE POWDER, METHOD FOR PRODUCING SOLID ELECTROLYTE POWDER, AND METHOD FOR PRODUCING COVERED BODY

      
Application Number JP2024015263
Publication Number 2024/262149
Status In Force
Filing Date 2024-04-17
Publication Date 2024-12-26
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Mashimo Suguru
  • Manabe Yusuke
  • Yoshida Masahiro
  • Abe Daisuke
  • Tanoue Koji

Abstract

Provided are: a solid electrolyte powder which contains 0.7% by mass to 5% by mass of Li, 8% by mass to 60% by mass of Nb, and 1.0% by mass to 30% by mass of P with respect to the solid electrolyte powder, with the content of the non-oxygen remainder, which is the remainder excluding oxygen (O), being 10% by mass or less with respect to the solid electrolyte powder, and which has a crystallite diameter of 100 nm or less; and related art thereof.

IPC Classes  ?

  • H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
  • C01B 25/45 - Phosphates containing plural metal, or metal and ammonium
  • H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
  • H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
  • H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 10/052 - Li-accumulators
  • H01M 10/0562 - Solid materials

10.

AQUEOUS SOLUTION CONTAINING LITHIUM AND SILICON, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY

      
Application Number JP2024017629
Publication Number 2024/241942
Status In Force
Filing Date 2024-05-13
Publication Date 2024-11-28
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Yoshida Masahiro
  • Abe Daisuke
  • Tanoue Koji

Abstract

44SiO (lithium orthosilicate) having good Li ion conductivity and a method for producing the aqueous solution, and a method for producing a positive electrode active material for a lithium secondary battery having a coating layer containing lithium orthosilicate using the aqueous solution. [Solution] An aqueous solution containing lithium and silicon that contains 0.1-3.0 mass% of lithium and 0.1-3.0 mass% of silicon and has a molar ratio Li/Si of lithium and silicon of 3.70-5.20 and an absorbance at a wavelength of 660 nm of 0.10 or less.

IPC Classes  ?

  • C01B 33/32 - Alkali metal silicates
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids

11.

SM-FE-N-BASED MAGNETIC POWDER AND METHOD FOR MANUFACTURING SAME

      
Application Number 18686941
Status Pending
Filing Date 2022-10-04
First Publication Date 2024-11-07
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Yamada, Tomoya
  • Yamada, Takahiro
  • Sato, Kimitaka
  • Kato, Shogo
  • Kumon, Shoichi

Abstract

An Sm—Fe—N-based magnetic powder includes particles containing Sm, Fe, and N as main components. The powder has a composition wherein a molar ratio of Sm to Fe (Sm/Fe) is 0.09 or more and 0.25 or less, a molar ratio of N to Fe (N/Fe) is 0.06 or more and 0.30 or less, and a Ca content in the powder is 0.002 mass % or less. When a cumulative 10% particle diameter is represented by D10, a cumulative 50% particle diameter is represented by D50, and a cumulative 90% particle diameter is represented by D90 in a volume-based particle size distribution according to a laser diffraction/scattering method, D50 is 2.0 to 11.0 μm, and D10, D50, and D90 satisfy a relationship of the following formula: (D90−D10)/D50<1.10. The Sm—Fe—N-based magnetic powder is advantageous in improving coercive force, containing few impurities, and improving the performance and manufacturability of a bonded magnet.

IPC Classes  ?

  • H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
  • B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying

12.

AQUEOUS SOLUTION CONTAINING NIOBIUM POLYACID IONS, LITHIUM IONS, AND PHOSPHATE IONS, PRODUCTION METHOD THEREFOR, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY

      
Application Number JP2024011789
Publication Number 2024/204115
Status In Force
Filing Date 2024-03-25
Publication Date 2024-10-03
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Mashimo Suguru
  • Yoshida Masahiro
  • Abe Daisuke
  • Tanoue Koji

Abstract

[Problem] To provide an aqueous solution and a production method therefor, the aqueous solution containing niobium polyacid ions, lithium ions, and phosphate ions, suppressing an increase in the specific surface area of a coated positive electrode active material when the surfaces of positive electrode active material particles of a lithium-ion secondary battery are coated with a coating layer containing niobium, lithium, and phosphorus, which are solid electrolytes, and having excellent storage stability. [Solution] This aqueous solution contains niobium polyacid ions, lithium ions, and phosphate ions, wherein: the ratio P/(Nb+Li+P) of the molar number of the phosphorus to the sum of the molar numbers of the niobium, lithium, and phosphorus contained in the aqueous solution is at least 0.04 and less than 0.5; the molar ratio Li/Nb of the lithium and the niobium is greater than 0.6 and at most 2.0; and 0.01-10 mass% of hydrogen peroxide is preferably further contained.

IPC Classes  ?

  • C01B 25/18 - Phosphoric acid
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy

13.

ARRANGEMENT STRUCTURE OF SOLID ELECTROLYTE IN ALL-SOLID-STATE CELL, AND BATTERY

      
Application Number JP2024005483
Publication Number 2024/190265
Status In Force
Filing Date 2024-02-16
Publication Date 2024-09-19
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Kobayashi Hiroaki
  • Abe Daisuke
  • Tanoue Koji

Abstract

36x3+x3+x, where x is 2.0-5.0, and the second solid electrolyte includes sulfide or oxide as a main component. The first solid electrolyte is interposed between the electroconductive material on the high potential side and the second solid electrolyte, and a contact part is provided between the electroconductive material on the high potential side and the first solid electrolyte, and a contact part is provided between the first solid electrolyte and the second solid electrolyte.

IPC Classes  ?

  • H01M 10/0562 - Solid materials
  • C01F 7/54 - Double compounds containing both aluminium and alkali metals or alkaline earth metals
  • H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
  • H01M 10/052 - Li-accumulators
  • H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators

14.

DOWA

      
Application Number 019065339
Status Registered
Filing Date 2024-08-08
Registration Date 2024-12-25
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

semi-conductors; semiconductor wafers; semiconductor chips; semiconductor elements; LED (light emitting diode) chips; Sensors.

15.

DOWA

      
Application Number 234240500
Status Pending
Filing Date 2024-08-07
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 09 - Scientific and electric apparatus and instruments
  • 11 - Environmental control apparatus

Goods & Services

(1) Semi-conductors; semiconductor wafers; semiconductor chips; semiconductor power elements; LED (light emitting diode) chips; Sensors (2) Furnaces; Industrial furnaces; incinerator, furnaces, other than for laboratory use; Heat treatment furnaces; fittings, shaped, for furnaces; heat treatment equipment for treating metal parts, namely, furnaces and gas generators; Gas burner, heating furnace, non-experimental furnace, incinerator, sintering furnace, blunting furnace, hot air furnace, mobile metal heating furnace, electric furnace.

16.

DOWA

      
Serial Number 98687386
Status Pending
Filing Date 2024-08-07
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Semiconductor wafers; semiconductor power elements; silicon chips for LEDs

17.

METHOD FOR PRODUCING CERAMIC/METAL BONDED OBJECT

      
Application Number JP2023036573
Publication Number 2024/085004
Status In Force
Filing Date 2023-10-06
Publication Date 2024-04-25
Owner
  • OSAKA UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Sato Yuji
  • Takenaka Keisuke
  • Makinoshima Kazuki
  • Tsukamoto Masahiro
  • Kobayashi Koji
  • Osanai Hideyo

Abstract

[Problem] To directly bond a metal layer in the shape of a thin line to a surface of a ceramic substrate. [Solution] A method for producing a ceramic/metal bonded object which comprises: causing laser beams to strike on a surface of a ceramic substrate while sweeping the laser beams; simultaneously therewith, feeding a solid metallic material toward a region (hereinafter, referred to as "irradiated area") in the ceramic-substrate surface, the region being irradiated with the laser beams, so that the metallic material being supplied is also in the state of being irradiated with the laser beams, thereby melting the metallic material while heating the ceramic-substrate surface located in the irradiated area; and causing the molten metallic material to adhere to the ceramic-substrate surface and then solidifying the metallic material.

IPC Classes  ?

  • B23K 26/342 - Build-up welding
  • C23C 24/10 - Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
  • C23C 26/00 - Coating not provided for in groups
  • C23C 26/02 - Coating not provided for in groups applying molten material to the substrate

18.

METHOD FOR PRODUCING ALN SINGLE CRYSTALS, ALN SINGLE CRYSTALS, AND DEVICE FOR PRODUCING ALN SINGLE CRYSTALS

      
Application Number JP2023006081
Publication Number 2023/162936
Status In Force
Filing Date 2023-02-20
Publication Date 2023-08-31
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Fukuyama Hiroyuki
  • Ohtsuka Makoto
  • Adachi Masayoshi
  • Miyata Rintaro
  • Watanabe Yasuhiro

Abstract

Provided are: a method for producing AlN single crystals, the method capable of producing AIN single crystals at low cost and in a continuous manner; AlN single crystals; and a device for producing AlN single crystals. The method for produing AlN single crystals includes: a melt formation step for heating and melting an alloy containing Al to form a melt of the alloy; and a deposition step for depositing AlN single crystals while providing a temperature gradient to the melt by cooling a part of the melt. In the deposition step, by bringing a nitrogen-containing gas into contact with a high-temperature section of the melt and holding AlN seed crystals or a crystal growth substrate for single crystals in a low-temperature section in the melt, with nitrogen being taken into the melt in the high-temperature section, AlN single crystals are deposited on the AlN seed crystals or on the substrate in the low-temperature section, and thereby AlN single crystals continuously grow.

IPC Classes  ?

  • C30B 29/38 - Nitrides
  • C30B 17/00 - Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
  • C30B 19/02 - Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux

19.

SM-FE-N-BASED MAGNETIC POWDER AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2022037132
Publication Number 2023/063171
Status In Force
Filing Date 2022-10-04
Publication Date 2023-04-20
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Yamada Tomoya
  • Yamada Takahiro
  • Sato Kimitaka
  • Kato Shogo
  • Kumon Shoichi

Abstract

[Problem] To provide an Sm-Fe-N-based magnetic powder that is configured from fine-sized particles advantageous for improving coercivity, that contains minimal impurities, and that is useful for improving the productivity and performance of bond magnets. [Solution] A powder composed of particles having Sm, Fe, and N as main components, the powder having a composition in which the molar ratio Sm/Fe of Sm to Fe is 0.09-0.25, the molar ratio N/Fe of N to Fe is 0.06-0.30, and the Ca content of the powder is 0.002 mass% or less, and, in a volume-based grain size distribution measured by laser diffraction/scattering, D50 being 2.0-11.0 μm, and D10, D50, and D90 satisfying the following relationship (1), where D10 is the cumulative 10% particle diameter, D50 is the cumulative 50% particle diameter, and D90 is the cumulative 90% particle diameter. Relationship (1): (D90−D10)/D50≤1.10

IPC Classes  ?

  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
  • B22F 1/065 - Spherical particles
  • B22F 1/14 - Treatment of metallic powder
  • B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
  • C22C 1/04 - Making non-ferrous alloys by powder metallurgy
  • C22C 38/00 - Ferrous alloys, e.g. steel alloys
  • C23C 8/24 - Nitriding
  • H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
  • H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
  • H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets

20.

ULTRAVIOLET LIGHT RECEIVING DEVICE

      
Application Number 17759040
Status Pending
Filing Date 2021-01-15
First Publication Date 2023-02-09
Owner
  • DOWA HOLDINGS Co., Ltd. (Japan)
  • DOWA Electronics Materials Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Watanabe, Yasuhiro

Abstract

Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 105 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

IPC Classes  ?

  • H01L 31/108 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
  • H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
  • H01L 31/0224 - Electrodes

21.

IRON-BASED OXIDE MAGNETIC POWDER AND METHOD FOR PRODUCING SAME

      
Application Number 17764229
Status Pending
Filing Date 2020-09-29
First Publication Date 2022-11-24
Owner
  • THE UNIVERSITY OF TOKYO (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Ohkoshi, Shin-Ichi
  • Namal, Asuka
  • Tokoro, Hiroko
  • Yoshikiyo, Marie
  • Yamaga, Kazuhiro
  • Miyamoto, Yasuto
  • Mineyama, Yuki
  • Sakane, Kenji
  • Kawahito, Tetsuya

Abstract

A raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution are added to a reaction system to adjust the pH of the reaction system from 1.0 to 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and the pH of the reaction system is then neutralized from 7.0 to 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide, followed by heating so as to form particles of ε-iron oxide in which Fe sites are partially substituted by other metal elements, and then, a slurry containing the particles is classified. The iron-based oxide magnetic powder has a particle shape close to a perfect sphere and is suitable for use in a magnetic recording medium.

IPC Classes  ?

  • H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles
  • C01G 49/06 - Ferric oxide [Fe2O3]
  • B82Y 40/00 - Manufacture or treatment of nanostructures
  • B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
  • B82Y 25/00 - Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

22.

Metal negative electrode, method for fabricating the same and secondary battery including the same

      
Application Number 17753694
Grant Number 11652204
Status In Force
Filing Date 2020-09-11
First Publication Date 2022-10-06
Grant Date 2023-05-16
Owner
  • THE DOSHISHA (Japan)
  • DOWA HOLDINGS Co., Ltd. (Japan)
Inventor Morimitsu, Masatsugu

Abstract

Provided is a metal negative electrode used for a secondary battery. The metal negative electrode includes an active material portion, a current collector, and a non-electronically conductive reaction space divider. The active material portion forms metal during charging and forms an oxidation product of the metal during discharging. The metal is used as a negative-electrode active material. The current collector is electrically connected to the active material portion. The non-electronically conductive reaction space divider is integrally formed with or connected to the current collector and/or the active material portion. The reaction space divider has a plurality of electrolyte holder portions configured to hold a liquid electrolyte.

IPC Classes  ?

  • H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
  • H01M 4/134 - Electrodes based on metals, Si or alloys
  • H01M 4/42 - Alloys based on zinc
  • H01M 4/46 - Alloys based on magnesium or aluminium
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 10/054 - Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
  • H01M 4/02 - Electrodes composed of, or comprising, active material

23.

DOWA

      
Serial Number 97326747
Status Registered
Filing Date 2022-03-23
Registration Date 2023-08-15
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Metallic oxides; metal oxide powders for industrial purposes; silver oxides; oxides; magnetic fluid for industrial purposes; chemical compositions for metal plating; catalysts for oxidation processes

24.

ZINC NEGATIVE ELECTRODE AND MANUFACTURING METHOD THEREFOR, AND SECONDARY CELL COMPRISING SAID ZINC NEGATIVE ELECTRODE AND MANUFACTURING METHOD THEREFOR

      
Application Number JP2021004186
Publication Number 2021/161900
Status In Force
Filing Date 2021-02-04
Publication Date 2021-08-19
Owner
  • THE DOSHISHA (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor Morimitsu Masatsugu

Abstract

Provided are: a zinc negative electrode having exceptional repeating resistance, and excellent charge/discharge cycling characteristics even at a high charge/discharge rate; a manufacturing method therefor; a secondary cell using the zinc negative electrode; and a manufacturing method therefor. A zinc negative electrode used in a secondary cell, wherein the zinc negative electrode comprises: an active material part in which zinc is generated during charging, and oxidized zinc is generated during discharging, the zinc being used as a negative electrode active material; a collector that is electrically connected to the active material part; and a non-electron-conductive reaction space restriction part that is integrally formed with or connected to the collector and/or the active material part. The reaction space restriction part has a plurality of electrolyte-holding parts comprising a space that can hold a liquid electrolyte.

IPC Classes  ?

  • H01M 4/24 - Electrodes for alkaline accumulators
  • H01M 4/26 - Processes of manufacture
  • H01M 4/86 - Inert electrodes with catalytic activity, e.g. for fuel cells
  • H01M 4/88 - Processes of manufacture
  • H01M 4/90 - Selection of catalytic material
  • H01M 12/08 - Hybrid cellsManufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type

25.

ULTRAVIOLET-LIGHT-RECEIVING ELEMENT

      
Application Number JP2021001353
Publication Number 2021/149623
Status In Force
Filing Date 2021-01-15
Publication Date 2021-07-29
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • DOWA ELECTRONICS MATERIALS CO., LTD. (Japan)
Inventor
  • Toba Ryuichi
  • Watanabe Yasuhiro

Abstract

Provided is an ultraviolet-light-receiving element that has light-receiving sensitivity effective for a target wavelength in the ultraviolet region. A Schottky-junction-type ultraviolet-light-receiving element, wherein: there is a light-receiving sensitivity peak wavelength in the ultraviolet ray region of 230-320 nm (inclusive); and the rejection rate, which is the ratio (Rp/Rv) of a responsivity Rp at the light-receiving sensitivity peak wavelength to an average value Rv of the responsivity of the visible region of 400-680 nm (inclusive), is 105 or greater.

IPC Classes  ?

  • H01L 31/108 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type

26.

Clad material and method for producing same

      
Application Number 16771730
Grant Number 11876030
Status In Force
Filing Date 2018-12-03
First Publication Date 2021-06-10
Grant Date 2024-01-16
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • THE GOODSYSTEM CORPORATION (Republic of Korea)
Inventor
  • Aoyama, Tomotsugu
  • Narieda, Hiroto
  • Kim, Ilho
  • Cho, Meoung Whan

Abstract

a to contact the Cu-graphite layer 12, the layers are heated while a pressure is applied between the Cu-graphite layer 12 and the Mo—Cu layers 10.

IPC Classes  ?

  • C22C 27/04 - Alloys based on tungsten or molybdenum
  • B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
  • B32B 15/16 - Layered products essentially comprising metal next to a particulate layer
  • B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
  • H01L 23/373 - Cooling facilitated by selection of materials for the device
  • C22C 9/00 - Alloys based on copper
  • C23C 18/38 - Coating with copper
  • H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
  • H01L 23/00 - Details of semiconductor or other solid state devices

27.

IRON-BASED OXIDE MAGNETIC POWDER AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2020036984
Publication Number 2021/065936
Status In Force
Filing Date 2020-09-29
Publication Date 2021-04-08
Owner
  • THE UNIVERSITY OF TOKYO (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Ohkoshi Shin-Ichi
  • Namai Asuka
  • Tokoro Hiroko
  • Yoshikiyo Marie
  • Yamaga Kazuhiro
  • Miyamoto Yasuto
  • Mineyama Yuki
  • Sakane Kenji
  • Kawahito Tetsuya

Abstract

[Problem] To provide an iron-based oxide magnetic powder which has a sufficiently reduced amount of fine particles and coarse particles, has a powder shape that is close to a perfect sphere, and is suitable for magnetic recording medium applications. [Solution] A source solution containing ferric ions or ferric ions and metal element ions which substitute a portion of the Fe site and an alkali aqueous solution for neutralizing the source solution are added to a reaction system so that the reaction system has a pH of 1.0 to 3.0; a hydroxy carboxylic acid is added to the obtained reaction solution and thereafter the pH of the reaction system is neutralized to 7.0 to 10.0; a deposit of the obtained substituted metal element-containing iron oxyhydroxide is coated with a silicon oxide and heated to form particles of ε-iron oxide in which a portion of the Fe site is substituted with another metal element; and the slurry containing the particles is classified.

IPC Classes  ?

  • C01G 51/00 - Compounds of cobalt
  • G11B 5/706 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
  • G11B 5/714 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the dimension of the magnetic particles
  • G11B 5/84 - Processes or apparatus specially adapted for manufacturing record carriers
  • C01G 49/00 - Compounds of iron
  • H01F 1/11 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites in the form of particles

28.

METAL NEGATIVE ELECTRODE, METHOD FOR FABRICATING THE SAME AND SECONDARY BATTERY INCLUDING THE SAME

      
Document Number 03151028
Status In Force
Filing Date 2020-09-11
Open to Public Date 2021-03-18
Grant Date 2023-01-24
Owner
  • THE DOSHISHA (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor Morimitsu, Masatsugu

Abstract

Provided are: a metal negative electrode having exceptional repeating resistance, and excellent charge/discharge cycling characteristics even at a high charge/discharge rate; a method for manufacturing same; and a secondary cell in which the metal negative electrode is used. A metal negative electrode used in a secondary cell, wherein the metal negative electrode comprises: an active material part in which a metal is produced during charging and an oxidation product of the metal is produced during discharging, the metal being used as a negative electrode active material; a collector electrically connected to the active material part; and a non-electron-conductive reaction space restriction part integrally formed with or connected to the collector and/or the active material part. The reaction space restriction part has a plurality of electrolyte-holding parts capable of holding a liquid electrolyte.

IPC Classes  ?

  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • H01M 4/64 - Carriers or collectors
  • H01M 10/00 - Secondary cellsManufacture thereof
  • H01M 12/08 - Hybrid cellsManufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
  • H01M 50/474 - Spacing elements inside cells other than separators, membranes or diaphragmsManufacturing processes thereof characterised by their position inside the cells
  • H01M 50/477 - Spacing elements inside cells other than separators, membranes or diaphragmsManufacturing processes thereof characterised by their shape

29.

METAL NEGATIVE ELECTRODE, METHOD FOR MANUFACTURING METAL NEGATIVE ELECTRODE, AND SECONDARY CELL COMPRISING METAL NEGATIVE ELECTRODE

      
Application Number JP2020034456
Publication Number 2021/049609
Status In Force
Filing Date 2020-09-11
Publication Date 2021-03-18
Owner
  • THE DOSHISHA (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor Morimitsu Masatsugu

Abstract

Provided are: a metal negative electrode having exceptional repeating resistance, and excellent charge/discharge cycling characteristics even at a high charge/discharge rate; a method for manufacturing same; and a secondary cell in which the metal negative electrode is used. A metal negative electrode used in a secondary cell, wherein the metal negative electrode comprises: an active material part in which a metal is produced during charging and an oxidation product of the metal is produced during discharging, the metal being used as a negative electrode active material; a collector electrically connected to the active material part; and a non-electron-conductive reaction space restriction part integrally formed with or connected to the collector and/or the active material part. The reaction space restriction part has a plurality of electrolyte-holding parts capable of holding a liquid electrolyte.

IPC Classes  ?

  • H01M 12/08 - Hybrid cellsManufacture thereof composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/134 - Electrodes based on metals, Si or alloys
  • H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
  • H01M 4/24 - Electrodes for alkaline accumulators
  • H01M 4/26 - Processes of manufacture
  • H01M 4/40 - Alloys based on alkali metals
  • H01M 4/42 - Alloys based on zinc
  • H01M 4/46 - Alloys based on magnesium or aluminium
  • H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
  • H01M 10/052 - Li-accumulators
  • H01M 10/054 - Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
  • H01M 10/0566 - Liquid materials
  • H01M 10/30 - Nickel accumulators
  • H01M 10/32 - Silver accumulators

30.

Deep ultraviolet LED and method for producing the same

      
Application Number 16964881
Grant Number 11309454
Status In Force
Filing Date 2019-01-25
First Publication Date 2021-02-04
Grant Date 2022-04-19
Owner
  • Marubun Corporation (Japan)
  • Shibaura Machine Co., Ltd. (Japan)
  • RIKEN (Japan)
  • ULVAC, Inc. (Japan)
  • Tokyo Ohka Kogyo Co., Ltd. (Japan)
  • Nippon Tungsten Co., Ltd. (Japan)
  • Dai Nippon Printing Co., Ltd. (Japan)
  • Dowa Holdings Co., Ltd. (Japan)
Inventor
  • Kashima, Yukio
  • Matsuura, Eriko
  • Kokubo, Mitsunori
  • Tashiro, Takaharu
  • Hirayama, Hideki
  • Maeda, Noritoshi
  • Jo, Masafumi
  • Kamimura, Ryuichiro
  • Osada, Yamato
  • Furuta, Kanji
  • Iwai, Takeshi
  • Aoyama, Yohei
  • Iwaisako, Yasushi
  • Nagano, Tsugumi
  • Watanabe, Yasuhiro

Abstract

2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

IPC Classes  ?

  • H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
  • H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
  • H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
  • H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
  • H01L 33/40 - Materials therefor

31.

DEEP ULTRAVIOLET LED AND PRODUCTION METHOD FOR SAME

      
Application Number JP2019002392
Publication Number 2019/146737
Status In Force
Filing Date 2019-01-25
Publication Date 2019-08-01
Owner
  • MARUBUN CORPORATION (Japan)
  • TOSHIBA KIKAI KABUSHIKI KAISHA (Japan)
  • RIKEN (Japan)
  • ULVAC, INC. (Japan)
  • TOKYO OHKA KOGYO CO., LTD. (Japan)
  • NIPPON TUNGSTEN CO., LTD. (Japan)
  • DAI NIPPON PRINTING CO., LTD. (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Kashima Yukio
  • Matsuura Eriko
  • Kokubo Mitsunori
  • Tashiro Takaharu
  • Hirayama Hideki
  • Maeda Noritoshi
  • Jo Masafumi
  • Kamimura Ryuichiro
  • Osada Yamato
  • Furuta Kanji
  • Iwai Takeshi
  • Aoyama Yohei
  • Iwaisako Yasushi
  • Nagano Tsugumi
  • Watanabe Yasuhiro

Abstract

1Dneff2Deff2Deff2Deff being the effective refractive index of the two-dimensional photonic crystal, and a being the period of the two-dimensional photonic crystal) satisfies 2≤m≤4, and in that, when the radius of the holes is R, 0.30≤R/a≤0.40.

IPC Classes  ?

  • H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
  • H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

32.

CLADDING AND METHOD FOR PRODUCING SAME

      
Application Number JP2018044388
Publication Number 2019/116946
Status In Force
Filing Date 2018-12-03
Publication Date 2019-06-20
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • THE GOODSYSTEM CORPORATION (Republic of Korea)
Inventor
  • Aoyama Tomotsugu
  • Narieda Hiroto
  • Kim Ilho
  • Cho Meoung Whan

Abstract

Provided are a cladding and a method for producing the same with which it is possible to prevent cracking and peeling from occurring even in the case of punching out (application of shear that is greater than thermal shock) due to press-machining. An Mo-Cu layer 10 on which a metal film 10a is formed on at least one surface thereof, the metal layer 10a comprising one metal selected from the group consisting of Co, Ti, Pd, Pt, and Ni, is disposed on each surface of a Cu-graphite layer 12 obtained by sintering a graphite powder having a Cu film formed on the surface thereof, the Mo-Cu layer 10 being disposed such that the metal film 10a contacts the surface of the Cu-graphite layer 12, and then the Cu-graphite layer 12 and the Mo-Cu layer 10 are heated while pressure is applied therebetween.

IPC Classes  ?

  • B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
  • H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
  • C22C 9/00 - Alloys based on copper
  • C22C 27/04 - Alloys based on tungsten or molybdenum

33.

DOWA

      
Serial Number 88320231
Status Registered
Filing Date 2019-02-28
Registration Date 2021-03-09
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 09 - Scientific and electric apparatus and instruments

Goods & Services

Magnetic metal oxides for industrial purposes Soft magnetic powders for industrial purposes; soft magnetic powders for industrial purpose for use in the manufacturing of electric wave-absorbing materials, sensors, and injectors

34.

Silver nanowires, method for producing same, and ink

      
Application Number 15542109
Grant Number 10391555
Status In Force
Filing Date 2016-01-14
First Publication Date 2018-09-27
Grant Date 2019-08-27
Owner
  • THE UNIVERSITY OF SHIGA PREFECTURE (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Ida, Shohei
  • Hirokawa, Yoshitsugu
  • Balachandran, Jeyadevan
  • Huaman, Jhon Lehman Cuya
  • Sato, Kimitaka

Abstract

Silver nanowires having a thin and long shape that exhibit excellent dispersibility in an aqueous solvent having an alcohol added thereto are provided by silver nanowires having an average diameter of 50 nm or less and an average length of 10 μm or more, covered with a copolymer of a maleimide-based monomer and vinylpyrrolidone. The silver nanowires can be produced by a method for producing silver nanowires, containing reductively depositing silver in a wire form in an alcohol solvent having dissolved therein a silver compound, the deposition being performed in the solvent having dissolved therein a copolymer of a maleimide-based monomer and vinylpyrrolidone.

IPC Classes  ?

  • H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
  • C09C 1/62 - Metallic pigments or fillers
  • C09C 3/10 - Treatment with macromolecular organic compounds
  • C09D 11/52 - Electrically conductive inks
  • H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
  • C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
  • C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
  • C08K 7/24 - Expanded, porous or hollow particles inorganic
  • C08K 9/04 - Ingredients treated with organic substances
  • C08K 3/08 - Metals
  • C08K 9/08 - Ingredients agglomerated by treatment with a binding agent

35.

DOWA

      
Application Number 190028700
Status Registered
Filing Date 2018-05-22
Registration Date 2021-07-28
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 06 - Common metals and ores; objects made of metal
  • 09 - Scientific and electric apparatus and instruments

Goods & Services

(1) Electrically conductive paste for soldering electronic components; industrial chemicals, namely carrier particles for use with electrostatic image development toner; electrically conductive paste mixed with metal powder for printing the conductive pattern of electronic circuits and electrodes. (2) Electronic chips for the manufacture of integrated circuits; gallium arsenide semiconductor wafer; LED (light emitting diode) chips; Laser diodes; Light-emitting diodes (LED); Semiconductors; electronic semiconductors; infrared sensors, biochip sensors, pressure sensors, proximity sensors, sensors for determining temperature; Silicon wafers; Semiconductor wafers; electronic tags for goods; LED's (light emitting diodes), electrical conductors for transformers, for fuel cells, for integrated circuits.

36.

Method for producing negative electrode active material for lithium ion secondary battery

      
Application Number 15459132
Grant Number 10256464
Status In Force
Filing Date 2017-03-15
First Publication Date 2017-06-29
Grant Date 2019-04-09
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi, Norihiro
  • Tohji, Kazuyuki
  • Tanaka, Yasumitsu
  • Zhang, Qiwu
  • Kai, Hiroyuki

Abstract

A method for producing a negative electrode active material for a lithium ion secondary battery, comprising a step of charging either silicon and copper (II) oxide or silicon and copper metal in a pulverization device, pulverizing either the silicon and copper (II) oxide or silicon and copper metal, and simultaneously mixing either silicon and copper (II) oxide or silicon and copper metal thus pulverized. A negative electrode active material for a lithium ion secondary battery is produced by the method.

IPC Classes  ?

  • H01M 4/82 - Multi-step processes for manufacturing carriers for lead-acid accumulators
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • C04B 35/626 - Preparing or treating the powders individually or as batches
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • C04B 35/58 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides
  • C01B 33/32 - Alkali metal silicates
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 10/052 - Li-accumulators

37.

Negative electrode active material for lithium ion secondary battery

      
Application Number 15459088
Grant Number 10044033
Status In Force
Filing Date 2017-03-15
First Publication Date 2017-06-29
Grant Date 2018-08-07
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi, Norihiro
  • Tohji, Kazuyuki
  • Tanaka, Yasumitsu
  • Zhang, Qiwu
  • Kai, Hiroyuki

Abstract

x) measured by an X-ray diffractometry of 50 nm or less, and having elemental ratios, expressed by molar ratios, Cu/(Si+Cu+O) and O/(Si+Cu+O) of from 0.02 to 0.30, wherein the negative electrode active material contains an intermetallic compound of silicon and copper.

IPC Classes  ?

  • H01M 4/00 - Electrodes
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/02 - Electrodes composed of, or comprising, active material

38.

Method for producing silver nanowires, silver nanowires, and ink using same

      
Application Number 15122200
Grant Number 10220441
Status In Force
Filing Date 2015-03-03
First Publication Date 2016-12-22
Grant Date 2019-03-05
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Saito, Hirotoshi
  • Kodama, Daisuke
  • Sato, Kimitaka

Abstract

A method for producing silver nanowires, containing reduction-precipitating silver in the form of wire in an alcohol solvent having dissolved therein a silver compound, the deposition being performed in the alcohol solvent having dissolved therein a chloride, a bromide, an alkali metal hydroxide, an aluminum salt, and an organic protective agent, the molar ratio Al/OH of the total Al amount of the aluminum salt dissolved in the solvent and the total hydroxide ion amount of the alkali metal hydroxide dissolved therein being from 0.01 to 0.40, the molar ratio OH/Ag of the total hydroxide ion amount of the alkali metal hydroxide dissolved in the solvent and the total Ag amount of the silver compound dissolved therein being from 0.005 to 0.50.

IPC Classes  ?

  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • C09D 11/52 - Electrically conductive inks
  • H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
  • B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
  • B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
  • H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys

39.

Active material composite powder, lithium battery, and method for manufacturing the same

      
Application Number 14914682
Grant Number 10680245
Status In Force
Filing Date 2014-07-18
First Publication Date 2016-07-21
Grant Date 2020-06-09
Owner
  • TOYOTA JIDOSHA KABUSHIKI KAISHA (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Uchiyama, Takayuki
  • Miki, Nariaki
  • Aiki, Yoshiaki
  • Tanoue, Koji

Abstract

2/g] is 0.93

IPC Classes  ?

  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 10/0562 - Solid materials
  • H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • C01G 53/00 - Compounds of nickel
  • H01M 4/139 - Processes of manufacture
  • H01M 10/052 - Li-accumulators
  • H01M 4/02 - Electrodes composed of, or comprising, active material

40.

SILVER NANOWIRE, METHOD FOR MANUFACTURING SAME, AND INK

      
Application Number JP2016051051
Publication Number 2016/114370
Status In Force
Filing Date 2016-01-14
Publication Date 2016-07-21
Owner
  • THE UNIVERSITY OF SHIGA PREFECTURE (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Ida Shohei
  • Hirokawa Yoshitsugu
  • Jeyadevan Balachandran
  • Jhon Lehman Cuya Huaman
  • Sato Kimitaka

Abstract

Provided is a silver nanowire having a long, thin shape that demonstrates excellent dispersibility in an aqueous medium to which alcohol has been added, the silver nanowire being coated with a copolymer of a maleimide monomer and vinylpyrrolidone and having an average diameter of 50 nm or less and an average length of 10 μm or less. A method for manufacturing a silver nanowire in which silver has been reduced and precipitated into a wire shape in an alcohol solvent in which a silver compound has been dissolved, wherein the silver nanowire is manufactured using a technique that promotes the precipitation with the copolymer of a maleimide monomer and vinylpyrrolidone having been dissolved in the solvent.

IPC Classes  ?

  • B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
  • C09C 1/62 - Metallic pigments or fillers
  • C09C 3/10 - Treatment with macromolecular organic compounds
  • C09D 11/52 - Electrically conductive inks
  • H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
  • H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
  • H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
  • H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables

41.

Positive-electrode active-material powder and manufacturing method therefor

      
Application Number 14787004
Grant Number 09761907
Status In Force
Filing Date 2014-05-06
First Publication Date 2016-03-31
Grant Date 2017-09-12
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Tanoue, Koji
  • Aiki, Yoshiaki

Abstract

3, wherein 0 £ X £ 0.5. An average proportion of a total atom number of Al, Ti and P in a total atom number of Al, Ti, M and P within an etching depth of 1 nm from the outermost surface determined by analysis in a depth direction with XPS is 50% or more. The transition metal M is, for example, at least one kind of Co, Ni and Mn.

IPC Classes  ?

  • H01M 10/0562 - Solid materials
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
  • H01M 4/04 - Processes of manufacture in general
  • C01B 25/45 - Phosphates containing plural metal, or metal and ammonium
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates

42.

Negative electrode active material for lithium ion secondary battery, method for producing the same, negative electrode, and battery

      
Application Number 14793975
Grant Number 09634327
Status In Force
Filing Date 2015-07-08
First Publication Date 2015-11-12
Grant Date 2017-04-25
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi, Norihiro
  • Tohji, Kazuyuki
  • Tanaka, Yasumitsu
  • Zhang, Qiwu
  • Kai, Hiroyuki

Abstract

In the case where a silicon substance having a high theoretical capacity as a negative electrode active material for a lithium ion secondary battery is used as a negative electrode active material, such a negative electrode active material is provided that has a high initial battery capacity and suffers less deterioration in performance even when many cycles of charge and discharge are repeated. A lithium ion secondary battery using the negative electrode active material is provided. Silicon and copper (II) oxide, or silicon, metallic copper and water are pulverized and simultaneously mixed in a pulverization device, thereby providing a negative electrode active material that has good cycle characteristics and a large battery capacity.

IPC Classes  ?

  • H01M 4/00 - Electrodes
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • C04B 35/626 - Preparing or treating the powders individually or as batches
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • C04B 35/58 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 10/052 - Li-accumulators

43.

METHOD FOR PRODUCING SILVER NANOWIRES, SILVER NANOWIRES AND INK USING SAME

      
Application Number JP2015056162
Publication Number 2015/133453
Status In Force
Filing Date 2015-03-03
Publication Date 2015-09-11
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Saito Hirotoshi
  • Kodama Daisuke
  • Sato Kimitaka

Abstract

A method for producing silver nanowires, wherein silver is precipitated in the form of wires by reduction in an alcohol solvent into which a silver compound is dissolved. The precipitation is carried out in an alcohol solvent into which a chloride, a bromide, an alkali metal hydroxide, an aluminum salt and an organic protection agent, which is a copolymer having a polymer composition of vinyl pyrrolidone and a diallyldimethylammonium salt monomer, are dissolved. The molar ratio of the total amount of Al in the aluminum slat to be dissolved in the solvent to the total amount of hydroxide ions in the alkali metal hydroxide to be dissolved in the solvent, namely Al/OH is set to 0.01-0.40. The molar ratio of the amount of hydroxide ions in the alkali metal hydroxide to be dissolved in the solvent to the total amount of Ag in the silver compound to be dissolved in the solvent, namely OH/Ag is set to 0.005-0.50. Consequently, thin and long silver nanowires, which have an average diameter of 50 nm or less and an average length of 10 μm or more and are suitable for the production of a transparent conductor, are stably produced by this method for producing silver nanowires.

IPC Classes  ?

  • B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
  • B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
  • H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
  • H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
  • H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
  • H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables

44.

Radioactive cesium decontaminator and method of producing the same, and method of removing the radioactive cesium

      
Application Number 14427111
Grant Number 10233099
Status In Force
Filing Date 2013-09-10
First Publication Date 2015-08-27
Grant Date 2019-03-19
Owner
  • THE JIKEI UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Namiki, Yoshihisa
  • Ueyama, Toshihiko
  • Yoshida, Takayuki
  • Watanabe, Ryoei

Abstract

50 is less than 6. The decontaminator is made by adding a ferrocyanide aqueous solution and an aqueous solution containing at least one transition metal into a suspension liquid containing a precursor formed by magnetic particles coated with organic monomer or polymer while applying a strong shear force.

IPC Classes  ?

  • B03C 1/01 - Pretreatment specially adapted for magnetic separation by addition of magnetic adjuvants
  • C02F 1/00 - Treatment of water, waste water, or sewage
  • C02F 1/48 - Treatment of water, waste water, or sewage with magnetic or electric fields
  • G21F 9/12 - Processing by absorptionProcessing by adsorptionProcessing by ion-exchange
  • G21F 9/28 - Treating solids
  • B01J 20/02 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material
  • B01J 20/26 - Synthetic macromolecular compounds
  • B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
  • B01J 20/32 - Impregnating or coating
  • C02F 101/00 - Nature of the contaminant

45.

Field electron emission film, field electron emission device, light emission device, and method for producing them

      
Application Number 14424074
Grant Number 09324556
Status In Force
Filing Date 2013-08-12
First Publication Date 2015-08-13
Grant Date 2016-04-26
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi, Norihiro
  • Tohji, Kazuyuki
  • Tanaka, Yasumitsu
  • Kai, Hiroyuki

Abstract

2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.

IPC Classes  ?

  • H01J 63/06 - Lamps with luminescent screen excited by the ray or stream
  • H01J 1/304 - Field-emissive cathodes
  • H01J 9/02 - Manufacture of electrodes or electrode systems
  • H01J 31/12 - Image or pattern display tubes, i.e. having electrical input and optical outputFlying-spot tubes for scanning purposes with luminescent screen
  • H01J 63/02 - Details, e.g. electrode, gas filling, shape of vessel

46.

SILVER NANOWIRE PRODUCTION METHOD

      
Application Number JP2015051235
Publication Number 2015/108183
Status In Force
Filing Date 2015-01-19
Publication Date 2015-07-23
Owner
  • THE UNIVERSITY OF SHIGA PREFECTURE (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Jeyadevan Balachandran
  • Jhon Lehman Cuya Huaman
  • Kodama Daisuke

Abstract

Provided is a silver nanowire production method which also exhibits a yield improving effect for protective agents other than PVP. When precipitating silver nanowires in an alcohol solvent in which a silver compound, a halogen compound and an organic protective agent are dissolved, the silver precipitation reaction is advanced in a state in which aluminum nitrate is also dissolved in the solvent. Relative to the total amount of the silver compound, the total amount of aluminum nitrate dissolved in the solvent is 0.01-0.50, expressed as the molar ratio Al/Ag, and the organic protective agent comprises, for example, alkylated PVP and/or a PVP/PVA graft copolymer.

IPC Classes  ?

  • B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder

47.

Catalyst, method for producing catalyst, and method for producing hydrogen-containing gas using catalyst, and hydrogen generating device, fuel cell system, and silicon-supported CeZr-based oxide

      
Application Number 14378506
Grant Number 09673465
Status In Force
Filing Date 2013-03-07
First Publication Date 2015-06-18
Grant Date 2017-06-06
Owner
  • OITA UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Nagaoka, Katsutoshi
  • Miyazaki, Tatsuro
  • Yano, Takuya
  • Ikari, Kazumasa
  • Ueyama, Toshihiko

Abstract

2 (x+y=1) and the silicon satisfies molar ratios of 0.02≦Si/Zr and 0.01

IPC Classes  ?

  • B01J 23/63 - Platinum group metals with rare earths or actinides
  • B01J 23/76 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups
  • H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
  • C01B 3/40 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts characterised by the catalyst
  • H01M 8/06 - Combination of fuel cells with means for production of reactants or for treatment of residues
  • H01M 8/0612 - Combination of fuel cells with means for production of reactants or for treatment of residues with means for production of gaseous reactants from carbon-containing material
  • C01B 3/32 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air
  • B01J 23/00 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group
  • B01J 23/10 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of rare earths
  • B01J 35/00 - Catalysts, in general, characterised by their form or physical properties
  • B01J 8/08 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with moving particles
  • B01J 21/06 - Silicon, titanium, zirconium or hafniumOxides or hydroxides thereof
  • B01J 23/46 - Ruthenium, rhodium, osmium or iridium
  • B01J 23/755 - Nickel
  • B01J 35/02 - Solids
  • B01J 37/00 - Processes, in general, for preparing catalystsProcesses, in general, for activation of catalysts
  • B01J 37/02 - Impregnation, coating or precipitation
  • B01J 37/16 - Reducing
  • H01M 8/124 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte

48.

ACTIVE MATERIAL COMPOSITE POWDER, LITHIUM BATTERY, METHOD FOR PRODUCING ACTIVE MATERIAL COMPOSITE POWDER, AND METHOD FOR MANUFACTURING LITHIUM BATTERY

      
Application Number JP2014069251
Publication Number 2015/037330
Status In Force
Filing Date 2014-07-18
Publication Date 2015-03-19
Owner
  • TOYOTA JIDOSHA KABUSHIKI KAISHA (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Uchiyama, Takayuki
  • Miki, Nariaki
  • Aiki, Yoshiaki
  • Tanoue, Koji

Abstract

Provided are: an active material composite powder which is capable of reducing resistance; and a method for producing the active material composite powder. This active material composite powder contains an active material and lithium niobate adhered to the surface of the active material, and has a BET specific surface area (S [m2/g]) satisfying 0.93 < S < 1.44. This method for producing an active material composite powder comprises: a spray drying step wherein a solution containing lithium and a peroxo complex of niobium is sprayed onto an active material and dried thereon in parallel; and a heat treatment step wherein a heat treatment is carried out after the spray drying step. The temperature of the heat treatment is more than 123°C but less than 350°C.

IPC Classes  ?

  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 10/058 - Construction or manufacture

49.

Aggregate of radioactive material removing particles and method of producing the same, and method of removing contaminant

      
Application Number 14280979
Grant Number 09679670
Status In Force
Filing Date 2014-05-19
First Publication Date 2014-11-27
Grant Date 2017-06-13
Owner
  • THE JIKEI UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Namiki, Yoshihisa
  • Ueyama, Toshihiko
  • Yoshida, Takayuki

Abstract

There is provided an aggregate of radioactive material removing particles in which two or more radioactive material removing particles having magnetic particles and a radioactive material adsorption component are assembled, wherein a pore volume in the aggregate is 0.5 mL/g or more and 5.0 mL/g or less, and the pore volume means a cumulative value obtained by a mercury press-in method.

IPC Classes  ?

  • G21F 9/12 - Processing by absorptionProcessing by adsorptionProcessing by ion-exchange
  • C02F 1/28 - Treatment of water, waste water, or sewage by sorption
  • C02F 1/48 - Treatment of water, waste water, or sewage with magnetic or electric fields
  • B01J 20/26 - Synthetic macromolecular compounds
  • B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
  • B01J 20/32 - Impregnating or coating
  • C02F 101/00 - Nature of the contaminant
  • C02F 103/18 - Nature of the water, waste water, sewage or sludge to be treated from the wet purification of gaseous effluents

50.

POSITIVE-ELECTRODE ACTIVE-MATERIAL POWDER AND MANUFACTURING METHOD THEREFOR

      
Application Number JP2014062208
Publication Number 2014/181784
Status In Force
Filing Date 2014-05-06
Publication Date 2014-11-13
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Tanoue Koji
  • Aiki Yoshiaki

Abstract

[Problem] To provide a lithium-ion secondary-battery positive-electrode active material with drastically reduced transition-metal content near the outermost surfaces thereof. [Solution] A solid-electrolyte-coated positive-electrode active-material powder comprising particles having solid-electrolyte coating layers that can be represented by Li1+XAlXTi2−X(PO4)3, with 0 ≤ X ≤ 0.5, on the surfaces of particles of a lithium-ion secondary-battery positive-electrode active material comprising a compound oxide of lithium and one or more transition metals (M). An XPS depth profile shows that up to a depth of 1 nm from the outermost surfaces of the abovementioned particles, the total number of atoms of aluminum, titanium, and phosphorus is, on average, at least 50% of the total number of atoms of aluminum, titanium, the transition metal(s) (M), and phosphorus. The transition metal(s) (M) could be, for example, one or more of cobalt, nickel, and manganese.

IPC Classes  ?

  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy

51.

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERIES, METHOD FOR PRODUCING SAME, NEGATIVE ELECTRODE, AND BATTERY

      
Application Number JP2014057967
Publication Number 2014/162908
Status In Force
Filing Date 2014-03-24
Publication Date 2014-10-09
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi Norihiro
  • Tohji Kazuyuki
  • Tanaka Yasumitsu
  • Zhang Qiwu
  • Kai Hiroyuki

Abstract

[Problem] To obtain a negative electrode active material which is composed of a silicon-based substance having a high theoretical capacity in terms of a negative electrode active material for lithium ion secondary batteries, and which has a high initial battery capacity and is suppressed in deterioration of the performance even after a plurality of charge/discharge cycles if used as a negative electrode active material for a lithium ion secondary battery. To provide a lithium ion secondary battery which uses this negative electrode active material. [Solution] A negative electrode active material having good cycle characteristics and a high battery capacity is able to be obtained by pulverizing silicon and copper (II) oxide, or alternatively silicon, copper metal and water, using a pulverization means and mixing these materials at the same time.

IPC Classes  ?

  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • H01M 10/052 - Li-accumulators
  • H01M 10/0566 - Liquid materials

52.

RADIOACTIVE CESIUM DECONTAMINATING AGENT AND METHOD FOR PRODUCING SAME, AND METHOD FOR REMOVING RADIOACTIVE CESIUM

      
Application Number JP2013074408
Publication Number 2014/038713
Status In Force
Filing Date 2013-09-10
Publication Date 2014-03-13
Owner
  • THE JIKEI UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Namiki Yoshihisa
  • Ueyama Toshihiko
  • Yoshida Takayuki
  • Watanabe Ryoei

Abstract

Provided is a method for producing a decontaminating agent particle, which enables the easy and high-productivity production of a decontaminating agent particle that can decontaminate a radioactive substance with high efficiency, has high environmental resistance, is suitable for the treatment of a large amount of the radioactive substance, and can be used in a radioactive substance decontamination system or the like. Provided is a method for producing a radioactive cesium decontaminating agent, which comprises: a step of suspending a magnetic particle in a solvent and coating the magnetic particle with a monomer or polymer of an organic substance to form a precursor; a step of adding an aqueous ferrocyanide solution and an aqueous solution containing at least one transition metal to a suspension containing the coated precursor while applying strong shear force to the suspension to produce a radioactive cesium decontaminating agent; and a step of removing water from a slurry containing the radioactive cesium decontaminating agent.

IPC Classes  ?

  • G21F 9/28 - Treating solids
  • B01J 20/02 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material
  • B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
  • B01J 20/30 - Processes for preparing, regenerating or reactivating
  • B03C 1/00 - Magnetic separation
  • G21F 9/12 - Processing by absorptionProcessing by adsorptionProcessing by ion-exchange

53.

FIELD ELECTRON EMISSION FILM, FIELD ELECTRON EMISSION ELEMENT, LIGHT EMITTING ELEMENT, AND METHOD FOR PRODUCING SAME

      
Application Number JP2013071772
Publication Number 2014/034423
Status In Force
Filing Date 2013-08-12
Publication Date 2014-03-06
Owner
  • TOHOKU UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Shimoi Norihiro
  • Tohji Kazuyuki
  • Tanaka Yasumitsu
  • Kai Hiroyuki

Abstract

[Problem] Provided are a field electron emission film that can operate with a small electric power and has high uniformity of brightness in a light emission surface, a field electron emission element and a light emitting element using the field electron emission film, and a method for producing the same. [Solution] Provided is a field electron emission film that contains 60 to 99.9 mass% of tin-doped indium oxide and 0.1 to 20 mass% of carbon nanotubes, wherein grooves having a width in a range of 0.1 to 50 μm each and having a total length of 2 mm or more per 1 mm2 are formed on a surface of the film, and the carbon nanotubes are exposed on walls of the grooves. After an ITO film containing carbon nanotubes is formed on a substrate, grooves are formed on a surface of the ITO film, and ends of carbon nanotubes that are exposed on walls of the grooves are used as emitters.

IPC Classes  ?

  • H01J 1/304 - Field-emissive cathodes
  • H01J 9/02 - Manufacture of electrodes or electrode systems
  • H01J 31/12 - Image or pattern display tubes, i.e. having electrical input and optical outputFlying-spot tubes for scanning purposes with luminescent screen
  • H01J 63/06 - Lamps with luminescent screen excited by the ray or stream

54.

CATALYST, METHOD FOR PRODUCING CATALYST, AND METHOD FOR PRODUCING HYDROGEN-CONTAINING GAS USING CATALYST, AND HYDROGEN GENERATING DEVICE, FUEL CELL SYSTEM, AND SILICON-SUPPORTED CeZr-BASED OXIDE

      
Application Number JP2013001457
Publication Number 2013/132862
Status In Force
Filing Date 2013-03-07
Publication Date 2013-09-12
Owner
  • OITA UNIVERSITY (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Nagaoka, Katsutoshi
  • Miyazaki, Tatsuro
  • Yano, Takuya
  • Ikari, Kazumasa
  • Ueyama, Toshihiko

Abstract

The purpose of the present invention is to provide a catalyst, etc. having a low reaction start temperature at which a self-heating function appears, and whereby carbon accumulation is suppressed even when reaction is repeated. This catalyst comprises a CeZr-based oxide, silicon, and a catalytically active metal, and is characterized in that the CeZr-based oxide satisfies the formula CexZryO2 (x + y = 1), and the silicon satisfies the mole ratios 0.02 ≤ Si/Zr and 0.01 < Si/(Ce + Zr + Si) < 0.2. This catalyst is capable of lowering the initial reduction temperature for causing oxygen vacancies, and, according to the catalytically active metal, enables reductive activation even at approximately 20°C, at which there is no need for heating. In repeated hydrogen generation reactions, since deposition of generated carbon on the catalyst surface can also be suppressed, and catalytic activity can be prevented from decreasing, the performance of the catalyst can be maintained for a long time.

IPC Classes  ?

  • B01J 23/76 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups
  • B01J 23/63 - Platinum group metals with rare earths or actinides
  • C01B 3/40 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts characterised by the catalyst
  • H01M 8/06 - Combination of fuel cells with means for production of reactants or for treatment of residues
  • H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

55.

Lithium—transition metal oxide powder and method of producing the same, positive electrode active material for lithium ion battery, and lithium ion secondary battery

      
Application Number 13818264
Grant Number 09761868
Status In Force
Filing Date 2011-09-21
First Publication Date 2013-08-15
Grant Date 2017-09-12
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor Nagatomi, Akira

Abstract

There is provided a lithium-transition metal oxide powder with a coating layer containing lithium niobate formed on a part or the whole part of a surface of a lithium-transition metal oxide particle and having a low powder compact resistance, and a positive electrode active material for a lithium ion battery containing the lithium-transition metal oxide powder. Specifically, there is provided the lithium-transition metal oxide powder composed of a lithium-transition metal oxide particle with a part or the whole part of a surface coated with a coating layer containing lithium niobate, wherein a carbon-content is 0.03 mass % or less.

IPC Classes  ?

  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
  • H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
  • H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
  • C01G 33/00 - Compounds of niobium
  • C01G 51/00 - Compounds of cobalt
  • B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
  • H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
  • H01M 4/04 - Processes of manufacture in general

56.

DOWA

      
Serial Number 85955088
Status Registered
Filing Date 2013-06-10
Registration Date 2014-08-12
Owner Dowa Holdings Co., Ltd. (Japan)
NICE Classes  ?
  • 07 - Machines and machine tools
  • 37 - Construction and mining; installation and repair services

Goods & Services

Parts washing machines for industrial use; multi-purpose high pressure washers Installation, maintenance and repair of industrial furnaces

57.

DOWA

      
Application Number 011880515
Status Registered
Filing Date 2013-06-07
Registration Date 2013-10-10
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 07 - Machines and machine tools
  • 37 - Construction and mining; installation and repair services

Goods & Services

Waste crushing machines; waste compacting machines; washing machines for industrial use; high pressure washers; shredders [machines] for industrial use. Installation, maintenance and repair of contaminated soil purifying apparatus; installation, maintenance and repair of industrial furnaces; installation, maintenance and repair of air pollution control apparatus; installation, maintenance and repair of waste treatment apparatus; installation, maintenance and repair of effluent treatment apparatus; installation, maintenance and repair of sludge treatment apparatus; installation, maintenance and repair of sewage treatment apparatus; repair information.

58.

DOWA

      
Application Number 011161247
Status Registered
Filing Date 2012-09-04
Registration Date 2013-01-02
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ? 02 - Paints, varnishes, lacquers

Goods & Services

Foil (Silver -) [leaf]; Powders (Silvering -); Foil (Metal -) for use in the manufacture of paints; Multilayer foils of aluminium alloys for use in the manufacture of paints; Paste (Silver -); Silver emulsions [pigments]; Printing ink.

59.

CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, CHALCOGEN COMPOUND POWDER MANUFACTURING METHOD, CHALCOGEN COMPOUND PASTE MANUFACTURING METHOD AND CHALCOGEN COMPOUND THIN FILM MANUFACTURING METHOD

      
Application Number JP2010072318
Publication Number 2012/077242
Status In Force
Filing Date 2010-12-07
Publication Date 2012-06-14
Owner DOWA HOLDING Co., Ltd. (Japan)
Inventor
  • Ishikawa Yuichi
  • Fujino Takatoshi

Abstract

A method wherein a metal film composed of Cu, In and Ga is formed and then the metal film is selenized is known as a method for obtaining a film-like crystal of a chalcogen compound. This method, however, involves problems of film uniformity and productivity. Although a film-like crystal of a chalcogen compound with high uniformity can be obtained by a low-cost method for obtaining nanoparticles containing Cu, In, Ga and Se, the resistivity of the film-like crystal of a chalcogen compound is high since a large amount of carbon is contained in the chalcogen compound and thus the film-like crystal of the chalcogen compound does not have characteristics sufficient for applications such as solar cells. Specifically disclosed is a chalcogen compound powder which contains Cu, In, Se and optionally Ga, has an average particle diameter (D50) of less than 0.5 μm, and has a carbon content in the powder of 0.2% or less. The chalcogen compound powder is obtained by heating a metal hydroxide powder having an average primary particle diameter of 0.3 μm or less and one or more substances selected from among selenium and selenium compounds to a temperature not less than 220˚C in a reducing gas.

IPC Classes  ?

  • C01G 15/00 - Compounds of gallium, indium, or thallium

60.

CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE AND METHOD OF PRODUCING THESE

      
Application Number JP2010072319
Publication Number 2012/077243
Status In Force
Filing Date 2010-12-07
Publication Date 2012-06-14
Owner DOWA HOLDINGS Co., Ltd. (Japan)
Inventor
  • Ishikawa Yuichi
  • Tanoue Koji
  • Fujino Takatoshi

Abstract

A method wherein a metal film composed of Cu, In and Ga is formed and then the metal film is selenized is known as a method for obtaining a film-like crystal of a chalcogen compound. This method, however, involves problems of film uniformity and productivity. Although a film-like crystal of a chalcogen compound with high uniformity can be obtained by a low-cost method for obtaining nanoparticles containing Cu, In, Ga and Se, the resistivity of the film-like crystal of a chalcogen compound is high and thus the film-like crystal of the chalcogen compound does not have characteristics sufficient for applications such as solar cells. The disclosed low-carbon chalcogen compound powder containing Cu, In, Ga and Se, and having an average particle diameter (DSEM) of 80nm or less is obtained by generating a mixed solvent formed by mixing selenium or a selenium compound, a solvent with a boiling point of 250°C or less, and at least one of a mixture of copper salt and indium salt, a complex hydroxide of copper and indium, and a complex oxide of copper and indium, and heating the mixed solvent at a temperature of 220°C-500°C. By means of a paste of the chalcogen compound powder, a low-resistance thin film is obtained containing Cu, In, Ga and Se.

IPC Classes  ?

  • C01G 15/00 - Compounds of gallium, indium, or thallium

61.

SOLDER POWDER AND PROCESS FOR PRODUCING SOLDER POWDER

      
Application Number JP2010070562
Publication Number 2012/066664
Status In Force
Filing Date 2010-11-18
Publication Date 2012-05-24
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor Ishikawa, Yuichi

Abstract

[Problem] To obtain a solder powder having an average particle diameter of 0.05 µm or more but less than 3 µm. [Solution] A solder powder having an average particle diameter of, for example, 0.05 µm or more but less than 3 µm is obtained by using a process for solder powder production which comprises a step in which a solid or liquid metal, a nonaqueous solvent, and balls for pulverization which have a diameter of 0.05-5 mm are introduced into a vessel to obtain a mixture, a step in which the mixture is heated to 150ºC or higher and stirred, a step in which the balls for pulverization are separated from the stirred mixture to obtain a mixture of a solder powder and the nonaqueous solvent, and a step in which the solder powder/nonaqueous-solvent mixture is subjected to solid/liquid separation to obtain the solder powder.

IPC Classes  ?

  • B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material

62.

Carbon nanotube and method for producing same

      
Application Number 13376564
Grant Number 08858909
Status In Force
Filing Date 2010-05-28
First Publication Date 2012-04-05
Grant Date 2014-10-14
Owner
  • Dowa Holdings Co., Ltd. (Japan)
  • Tohoku University (Japan)
Inventor
  • Sato, Yoshinori
  • Tohji, Kazuyuki
  • Namura, Masaru

Abstract

There is provided a high-purity carbon nanotube, which can be produced with simple purification by causing graphite to be hardly contained in crude soot obtained immediately after being synthesized by arc-discharge, and a method for producing the same. Soot containing carbon nanotubes produced by arc-discharge using an anode which contains amorphous carbon as a main component is heated at a temperature of not lower than 350° C. to be burned and oxidized, immersed in an acid, heated at a temperature, which is not lower than the heating temperature in the previous burning and oxidation and which is not lower than 500° C., to be burned and oxidized, and immersed in an acid again.

IPC Classes  ?

  • B01J 21/18 - Carbon
  • C01B 31/00 - Carbon; Compounds thereof
  • C01B 31/02 - Preparation of carbon; Purification
  • H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
  • B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
  • B82Y 40/00 - Manufacture or treatment of nanostructures

63.

LITHIUM-TRANSITION METAL OXIDE POWDER, METHOD FOR PRODUCING SAME, POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERY, AND LITHIUM ION SECONDARY BATTERY

      
Application Number JP2011071444
Publication Number 2012/043321
Status In Force
Filing Date 2011-09-21
Publication Date 2012-04-05
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor Nagatomi Akira

Abstract

Provided are: a lithium-transition metal oxide powder, which has low powder compact resistance, and wherein a coating layer that contains lithium niobate is formed on a part or the entire of the surface of each lithium-transition metal oxide particle; and a positive electrode active material for a lithium ion battery, which contains the lithium-transition metal oxide powder. Specifically provided is a lithium-transition metal oxide powder that is composed of lithium-transition metal oxide particles each of which has a surface that is partially or entirely covered with a coating layer that contains lithium niobate. The lithium-transition metal oxide powder has a carbon content of not more than 0.03% by mass.

IPC Classes  ?

  • C01G 51/00 - Compounds of cobalt
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy

64.

METHOD FOR PRODUCING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR ELEMENT FABRICATION, METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE OR GROUP III NITRIDE SEMICONDUCTOR ELEMENT, AND GROUP III NITRIDE GROWTH SUBSTRATE

      
Application Number JP2011073154
Publication Number 2012/043885
Status In Force
Filing Date 2011-09-30
Publication Date 2012-04-05
Owner
  • DOWA Electronics Materials Co., Ltd. (Japan)
  • DOWA HOLDINGS Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Miyashita, Masahito
  • Yao, Takafumi
  • Fujii, Katsushi

Abstract

Provided is a method for producing a substrate for group III nitride semiconductor element fabrication with an improved area ratio of chromium nitride microcrystals with a triangular pyramid shape in a chromium nitride layer surface. That is, there is provided a method for producing a substrate for group III nitride semiconductor element fabrication comprising a depositing step of forming a chromium layer on a base substrate for growth, a nitriding step of nitriding the chromium layer under prescribed conditions to form a chromium nitride layer, and a crystalline layer growth step of epitaxially growing at least one layer of a group III nitride semiconductor layer on the chromium nitride layer, characterized in that the chromium layer is deposited by a sputtering method such that the deposition rate is in the range of 7 to 65 Å/sec in the sputtering particle range and the thickness is in the range of 50 to 300 Å, the chromium nitride layer is formed in a MOCVD growth furnace with a furnace pressure of 6.666-66.66 kPa and a temperature of 1,000°C or more in a gas atmosphere containing ammonia gas, the gas component other than the ammonia gas in the gas atmosphere is a carrier gas comprising a nitrogen gas and a hydrogen gas, and the content ratio of the nitrogen gas in the carrier gas is in the range of 60 to 100 volume%.

IPC Classes  ?

  • C30B 29/38 - Nitrides
  • C23C 14/14 - Metallic material, boron or silicon
  • C23C 14/34 - Sputtering
  • C23C 14/58 - After-treatment
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

65.

Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same

      
Application Number 13259788
Grant Number 08878189
Status In Force
Filing Date 2010-03-25
First Publication Date 2012-03-15
Grant Date 2014-11-04
Owner
  • Dowa Holdings Co., Ltd. (Japan)
  • Dowa Electronics Materials Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Miyashita, Masahito
  • Toyota, Tatsunori
  • Kadowaki, Yoshitaka

Abstract

1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.

IPC Classes  ?

  • H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

66.

III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity

      
Application Number 13142115
Grant Number 08736025
Status In Force
Filing Date 2009-12-25
First Publication Date 2011-10-20
Grant Date 2014-05-27
Owner
  • Dowa Electroncs Materials Co., Ltd. (Japan)
  • Dowa Holdings Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Miyashita, Masahito
  • Toyota, Tatsunori

Abstract

1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf.

IPC Classes  ?

  • H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

67.

METHOD FOR PRODUCING LOW-MELTING-POINT METAL NANOPARTICLES

      
Application Number JP2010070565
Publication Number 2011/114579
Status In Force
Filing Date 2010-11-18
Publication Date 2011-09-22
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor Ishikawa, Yuichi

Abstract

Provided is a method for producing low-melting-point metal nanoparticles, which can produce low-melting-point metal nanoparticles without using a high-vacuum container and which can produce alloy nanoparticles having a stable metal composition ratio. Specifically, provided is a method for producing low-melting-point metal nanoparticles, which involves: a step for obtaining a mixture by placing a solid or liquid low-melting-point metal, a non-water-based solvent, and pulverization balls having a diameter of 0.015mm to 5mm in a container; a step for stirring and heating the aforementioned mixture between the temperatures of -5°C to +20°C of the melting point of the aforementioned low-melting-point metal; a step for separating the aforementioned pulverization balls from the stirred mixture, and for obtaining a mixture of low-melting-point metal nanoparticles and the non-water-based solvent; and a step for performing solid-liquid separation on the mixture of the low-melting-point nanoparticles and the non-water-based solvent, and for obtaining low-melting-point nanoparticles.

IPC Classes  ?

  • B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material
  • B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling

68.

PROCESS FOR PRODUCING SOLDER POWDER

      
Application Number JP2010070563
Publication Number 2011/062222
Status In Force
Filing Date 2010-11-18
Publication Date 2011-05-26
Owner DOWA HOLDINGS CO., LTD. (Japan)
Inventor Ishikawa, Yuichi

Abstract

A process for producing a solder powder is provided by which it is possible to efficiently obtain a solder powder having an average particle diameter of 0.05 µm or larger but less than 3 µm in a stable yield. The process for producing a solder powder comprises: a step in which a solid or liquid metal, a nonaqueous solvent, and balls for pulverization that have a diameter of 0.05-5 mm are introduced into a vessel to obtain a mixture; a step in which the mixture is heated to a temperature between (melting point of the metal)-5ºC and (melting point of the metal)+20ºC and stirred; a step in which the balls for pulverization are separated from the stirred mixture to obtain a mixture of a solder powder and the nonaqueous solvent; and a step in which the mixture of a solder powder and the nonaqueous solvent is subjected to solid-liquid separation to obtain the solder powder.

IPC Classes  ?

  • B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material
  • B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
  • B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
  • B23K 35/40 - Making wire or rods for soldering or welding
  • B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
  • C22C 13/00 - Alloys based on tin

69.

CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, AND METHOD FOR PRODUCING CHALCOGEN COMPOUND POWDER

      
Application Number JP2010063598
Publication Number 2011/021546
Status In Force
Filing Date 2010-08-04
Publication Date 2011-02-24
Owner DOWA HOLDINGS Co., Ltd. (Japan)
Inventor
  • Ishikawa, Yuichi
  • Fujino, Takatoshi

Abstract

A method wherein a metal film composed of Cu, In and Ga is formed and then the metal film is selenized is known as a method for obtaining a film-like crystal of a chalcogen compound. This method, however, involves a problem of film uniformity, a problem of productivity and the like. Although a film-like crystal of a chalcogen compound with high uniformity can be obtained by a low-cost method for obtaining nanoparticles containing Cu, In, Ga and Se, the resistivity of the film-like crystal of a chalcogen compound is high since a large amount of carbon is contained in the chalcogen compound and thus the film-like crystal of the chalcogen compound does not have characteristics sufficient for applications such as solar cells. Specifically disclosed is a chalcogen compound powder which contains Cu, In, Se and optionally Ga, has an average particle diameter (D50) of less than 0.5 μm, and has a carbon content in the powder of 0.2% or less. The chalcogen compound powder is obtained by heating a metal hydroxide powder having an average primary particle diameter of 0.3 μm or less and one or more substances selected from among selenium, selenium compounds, sulfur and sulfur compounds, to a temperature not less than 220˚C in a reducing gas.

IPC Classes  ?

  • C01B 19/00 - SeleniumTelluriumCompounds thereof
  • H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices

70.

CARBON NANOTUBES AND PROCESS FOR PRODUCING SAME

      
Application Number JP2010059492
Publication Number 2010/143585
Status In Force
Filing Date 2010-05-28
Publication Date 2010-12-16
Owner
  • DOWA HOLDINGS CO., LTD. (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Sato, Yoshinori
  • Tohji, Kazuyuki
  • Namura, Masaru

Abstract

Provided are high-purity carbon nanotubes which can be produced through simple purification by conducting synthesis by arc discharge so that substantially no graphite is contained in the crude soot obtained immediately after the synthesis. Also provided is a process for producing the carbon nanotubes. Soot containing carbon nanotubes which was produced by arc discharge using an anode comprising amorphous carbon as a main component is burned and oxidized by heating the soot in the air at a temperature of 350ºC or higher, thereafter treated by immersion in an acid, subsequently burned and oxidized by heating the soot in the air at a temperature which is not lower than the heating temperature used in the preceding combustion/oxidation and is 500ºC or higher, and then treated by immersion in an acid again.

IPC Classes  ?

  • C01B 31/02 - Preparation of carbon; Purification

71.

A METAL RECOVERY METHOD USING PROTONEMATA OF MOSS PLANTS

      
Application Number JP2010059584
Publication Number 2010/140701
Status In Force
Filing Date 2010-06-01
Publication Date 2010-12-09
Owner
  • RIKEN (Japan)
  • DOWA HOLDINGS CO., LTD. (Japan)
Inventor
  • Sakakibara, Hitoshi
  • Itouga, Misao
  • Komatsu, Yukari
  • Kawakami, Satoshi

Abstract

Disclosed is a method for metal recovery using plants. The aforementioned metal recovery method involves bringing protonemata from moss plants belonging to the family Funariaceae into contact with a metal-containing solution in which is dissolved metal having an ionization tendency less than that of silver.

IPC Classes  ?

  • C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
  • C02F 3/32 - Biological treatment of water, waste water, or sewage characterised by the animals or plants used, e.g. algae
  • C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
  • C22B 11/00 - Obtaining noble metals
  • A01G 1/00 - Horticulture; Cultivation of vegetables (labels or name-plates G09F 3/00, G09F 7/00)

72.

SUBSTRATE FOR GROWING GROUP-III NITRIDE SEMICONDUCTORS, EPITAXIAL SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTORS, GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, STAND-ALONE SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTORS, AND METHODS FOR MANUFACTURING THE PRECEDING

      
Application Number JP2010055986
Publication Number 2010/110489
Status In Force
Filing Date 2010-03-25
Publication Date 2010-09-30
Owner
  • DOWA HOLDINGS Co., Ltd. (Japan)
  • DOWA Electronics Materials Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Miyashita, Masahito
  • Toyota, Tatsunori
  • Kadowaki, Yoshitaka

Abstract

Provided are an epitaxial substrate for group-III nitride semiconductors, a group-III nitride semiconductor element, and a stand-alone substrate for group-III nitride semiconductors, which produce good crystallinity not only for materials having growth temperatures at or below 1050°C, such as AlGaN, GaN, and GaInN, but also for high-aluminum AlxGa1-xN compositions having high growth temperatures. Also provided are a stand-alone substrate for group-III nitride semiconductors, for fabricating the above, and a method for efficient fabrication thereof. These are characterized by being provided with a crystal growth substrate, at least the surface region of which comprises an aluminum-containing group-III nitride semiconductor, and a scandium nitride film formed on top of said surface region.

IPC Classes  ?

  • H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
  • H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies

73.

III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE

      
Application Number JP2009071903
Publication Number 2010/074346
Status In Force
Filing Date 2009-12-25
Publication Date 2010-07-01
Owner
  • DOWA HOLDINGS Co., Ltd. (Japan)
  • DOWA Electronics Materials Co., Ltd. (Japan)
Inventor
  • Toba, Ryuichi
  • Miyashita, Masahito
  • Toyota, Tatsunori

Abstract

Disclosed are a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050°C, but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, a III-nitride semiconductor growth substrate for fabricating these, and a method to efficiently fabricate these, which is characterized by being equipped with a crystal growth substrate, at least the surface portion of which is made from a III-nitride semiconductor containing Al, and a single metallic layer that is made from Zr or Hf and is formed on the aforementioned surface portion.

IPC Classes  ?

  • H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
  • C30B 29/38 - Nitrides
  • H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

74.

WATER PURIFICATION METHOD AND PURIFICATION APPARATUS

      
Application Number JP2007062525
Publication Number 2008/155859
Status In Force
Filing Date 2007-06-21
Publication Date 2008-12-24
Owner DOWA Holdings Co., Ltd. (Japan)
Inventor
  • Sakurai, Yasumasa
  • Hanyu, Shinichi
  • Kasamatsu, Toshiki
  • Nakazato, Hiroyuki

Abstract

A method of water purification that is capable of efficiently reducing the contents of organic matter and nitrogen in various treatment object waters, such as wastewater and polluted water, and that is advantageous from the viewpoint of cost. There are provided a method of water purification, and water purification apparatus, characterized in that treatment object waters are brought into contact with plant materials, such as wood splinters, so as to attain purification thereof. The above method and apparatus are based upon noting of, for example, the availability of organic matter dissolved out from plant materials, such as wood splinters,as a supply source for organic matter needed for nitrogen elimination. The method and apparatus excel in the feasibility of easy, efficient water purification with the use of wood splinters procurable at low cost, etc.

IPC Classes  ?

  • C02F 3/04 - Aerobic processes using trickle filters
  • C02F 3/00 - Biological treatment of water, waste water, or sewage
  • C02F 3/06 - Aerobic processes using submerged filters
  • C02F 3/32 - Biological treatment of water, waste water, or sewage characterised by the animals or plants used, e.g. algae
  • C02F 3/34 - Biological treatment of water, waste water, or sewage characterised by the microorganisms used
  • C02F 7/00 - Aeration of stretches of water

75.

Semiconductor substrate fabrication by etching of a peeling layer

      
Application Number 12064584
Grant Number 08119499
Status In Force
Filing Date 2006-08-24
First Publication Date 2008-12-04
Grant Date 2012-02-21
Owner
  • Furukawa Co., Ltd. (Japan)
  • Mitsubishi Chemical Corporation (Japan)
  • Dowa Holdings Co., Ltd. (Japan)
  • Epivalley Co., Ltd. (Republic of Korea)
  • Wavesquare Inc. (Republic of Korea)
Inventor
  • Yao, Takafumi
  • Cho, Meoung-Whan

Abstract

A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.

IPC Classes  ?

  • H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
  • H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
  • H01L 21/36 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

76.

DOWA

      
Application Number 001132489
Status Registered
Filing Date 1999-03-31
Registration Date 2000-09-29
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 06 - Common metals and ores; objects made of metal
  • 09 - Scientific and electric apparatus and instruments
  • 11 - Environmental control apparatus
  • 40 - Treatment of materials; recycling, air and water treatment,
  • 42 - Scientific, technological and industrial services, research and design

Goods & Services

Battery material, namely silver oxide, silver powder, silver oxide powder, zinc powder, nickel powder, metal powder, ferrite powder. Copper alloy and its coil; high purity metal. Measurement equipment; carrier for use of electrostatic image development; LED (light emitting diode) chips; GaAs wafer. Heat treatment furnaces; environmental equipment, namely waste water treatment unit, incinerators. Heat treatment; waste treatment; recycling; soil remediation, namely purification of soil, treatment of soil for the purpose of prevention of contamination. Site assessment, namely analysis of environment and soil, particularly evaluation of soil substance for the purpose of analyzing contaminated substances in the soil, evaluation of the compatibility of environment and the soil.

77.

DOWA

      
Serial Number 75414369
Status Registered
Filing Date 1998-01-06
Registration Date 2000-04-04
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 06 - Common metals and ores; objects made of metal
  • 09 - Scientific and electric apparatus and instruments
  • 11 - Environmental control apparatus

Goods & Services

SILVER OXIDE POWDERS FOR USE IN MANUFACTURING DRY BATTERY OR CELL ELECTRODES METALS, NAMELY, SILVER POWDERS FOR USE IN THE MANUFACTURE OF CONDUCTIVE PASTES, IRON POWDERS FOR USE IN MANUFACTURING VIDEOTAPES, FERRITE POWDERS FOR USE IN MANUFACTURING MAGNETS, COPPER ALLOYS FOR USE IN MANUFACTURING SPRINGS AND REED FRAMES, COPPER ALLOY WIRES, AND HIGH PURITY METALS INCLUDING GALLIUM, INDIUM, COPPER, ANTIMONY, CADMIUM, ZINC, TELLURIUM, GERMANIUM, SILVER, SELENIUM, BISMUTH AND MAGNESIUM MEASURING EQUIPMENTS FOR MEASURING CARBON DIOXIDE DENSITY WITHIN A FURNACE, LIGHT EMITTING DIODE CHIPS, GALLIUM/ARSENITE WAFERS FOR USE IN MANUFACTURING SEMICONDUCTORS AND BATTERY MATERIALS INCLUDING ZINC POWDERS, SILVER OXIDE POWDERS, LITHIUM-COBALT ALLOY POWDERS, AND LITHIUM-NICKEL ALLOY POWDERS INDUSTRIAL FURNACES

78.

DOWA

      
Serial Number 75414415
Status Registered
Filing Date 1998-01-06
Registration Date 2001-10-16
Owner DOWA HOLDINGS CO., LTD. (Japan)
NICE Classes  ?
  • 02 - Paints, varnishes, lacquers
  • 09 - Scientific and electric apparatus and instruments
  • 11 - Environmental control apparatus
  • 40 - Treatment of materials; recycling, air and water treatment,

Goods & Services

[ TONER CARRIERS FOR ELECTRO PHOTOGRAPHING APPARATUS ] LED'S (LIGHT EMITTING DIODES), ELECTRICAL CONDUCTORS HAVING SUPERCONDUCTIVE PROPERTIES; CONTROLS AND MEASURING APPARATUS FOR USE IN CONNECTION WITH HEAT TREATMENT EQUIPMENT, NAMELY, FURNACES AND WASTE INCINERATORS EQUIPMENT, NAMELY, ENVIRONMENTAL EQUIPMENT, NAMELY, INCINERATORS, FURNACES, RESERVOIRS, PUMPS, FILTERS AND CLEANERS FOR TREATING SOLID WASTE, CONTAMINATED SOIL, WASTE WATER AND GAS AND FOR RECOVERING BYPRODUCTS FROM WASTE MATERIALS AND INCINERATING WASTE; HEAT TREATMENT EQUIPMENT FOR TREATING METAL PARTS, NAMELY, FURNACES AND GAS GENERATORS HEAT TREATMENT OF METALLIC PARTS, NAMELY, HARDENING, TEMPERING, CARBURIZING AND SHOT PEENING OF AUTOMOTIVE AND CONSTRUCTION MACHINERY METALLIC PARTS; METAL RECYCLING; ENVIRONMENTAL REMEDIATION, NAMELY, SOLID WASTE, WATER, SOIL AND GAS TREATMENT