L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (France)
AIR LIQUIDE ADVANCED MATERIALS LLC (USA)
AIR LIQUIDE ELECTRONICS U.S. LP (USA)
AMERICAN AIR LIQUIDE, INC. (USA)
Inventor
Sanchez, Antonio
Itov, Gennadiy
Khandelwal, Manish
Ritter, Cole
Zhang, Peng
Girard, Jean-Marc
Wan, Zhiwen
Kuchenbeiser, Glenn
Orban, David
Kerrigan, Sean
Pesaresi, Reno
Stephens, Matthew Damien
Wang, Yang
Husson, Guillaume
Abstract
3x2yy], wherein x=0, 1, or 2 and y= 0, 1, or 2 when x+y=2; and x= 0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (France)
AIR LIQUIDE ADVANCED MATERIALS, LLC (USA)
Inventor
Girard, Jean-Marc
Zhang, Peng
Sanchez, Antonio
Khandelwal, Manish
Itov, Gennadiy
Pesaresi, Reno
Abstract
ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH3)2N-SiH2-X, wherein X is a halogen atom or an amino group.
C01B 21/088 - Compounds containing nitrogen and non-metals containing one or more hydrogen atoms containing also one or more halogen atoms
C01B 21/087 - Compounds containing nitrogen and non-metals containing one or more hydrogen atoms
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
5.
VAPOR DEPOSITION PROCESSES FOR FORMING SILICON- AND NITROGEN-CONTAINING THIN FILMS
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (France)
AIR LIQUIDE ADVANCED MATERIALS, LLC (USA)
Inventor
Girard, Jean-Marc
Zhang, Peng
Sanchez, Antonio
Khandelwal, Manish
Itov, Gennadiy
Pesaresi, Reno
Abstract
ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH3)2N-SiH2-X, wherein X is a halogen atom or an amino group.
C01B 21/088 - Compounds containing nitrogen and non-metals containing one or more hydrogen atoms containing also one or more halogen atoms
C01B 21/087 - Compounds containing nitrogen and non-metals containing one or more hydrogen atoms
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
6.
SI-CONTAINING FILM FORMING COMPOSITIONS AND METHODS OF USING THE SAME
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (France)
AIR LIQUIDE ADVANCED MATERIALS, LLC (USA)
Inventor
Girard, Jean-Marc
Zhang, Peng
Sanchez, Antonio
Khandelwal, Manish
Itov, Gennadiy
Pesaresi, Reno
Abstract
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N-SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
7.
CATALYST DEHYDROGENATIVE COUPLING OF CARBOSILANES WITH AMMONIA, AMNINES AND AMIDINES
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (France)
AIR LIQUIDE ADVANCED MATERIALS, LLC (USA)
Inventor
Kerrigan, Sean
Sanchez, Antonio
Abstract
Si-containing film forming compositions are disclosed comprising Si-N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si-N containing precursors.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
