Abstract

System for treating an individual semiconductor wafer, comprising a process chamber having an interior volume, wherein a wafer positioned between first and second bodies in a closed position can be treated via the first and second bodies, wherein the system is configured to limit a net rate of increase of the free volume of the process chamber when the first and second bodies move away from each other so as to reduce their occupancy of the interior volume, wherein the limiting involves causing a third body to move in a direction from an outward position towards an inward position so as to increase its occupancy of the interior volume to compensate for the reduced occupancy of the interior volume by the first and second bodies. Advantageously, an overpressure in the process chamber can be maintained to prevent ingress of contaminants without excessive loss of process gas from the process chamber.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

An exhaust abatement apparatus comprising housing walls bounding an abatement chamber, and a nozzle extending through one of the housing walls. The nozzle includes a nozzle housing defining an outer channel, and a central pipe at least partially extending in and being concentric with the outer channel and bounding an inner channel. The central pipe has an inner channel outlet which is inside the abatement chamber and is bound by a distal end of the central pipe. The outer channel has an outer channel outlet which is ring-shaped and is bounded by the distal end of the central pipe and a distal end of the nozzle housing. The nozzle further comprises a drag flow interrupter being mounted on the distal end of the nozzle housing and having a transverse dimension which is substantially larger than an outer transverse dimension of the ring-shaped outer channel outlet.

IPC Classes  ?

• B01D 53/72 - Organic compounds not provided for in groups , e.g. hydrocarbons
• B01D 53/76 - Gas phase processes, e.g. by using aerosols
• B01J 19/14 - Production of inert gas mixturesUse of inert gases in general
• B01J 19/26 - Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
• B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
• B05B 7/06 - Spray pistolsApparatus for discharge with one outlet orifice surrounding another approximately in the same plane
• B05B 15/16 - Arrangements for preventing or controlling structural damage to spraying apparatus or its outlets, e.g. for breaking at desired placesArrangements for handling or replacing damaged parts for preventing non-intended contact between spray heads or nozzles and foreign bodies, e.g. nozzle guards
• B05B 15/525 - Arrangements for cleaningArrangements for preventing deposits, drying-out or blockageArrangements for detecting improper discharge caused by the presence of foreign matter for removal of clogging particles by increasing the cross section of the discharge openings
• B05B 15/50 - Arrangements for cleaningArrangements for preventing deposits, drying-out or blockageArrangements for detecting improper discharge caused by the presence of foreign matter

Abstract

An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Goods & Services

Machines for depositing a layer of silicon wafer in the semiconductor industry; industrial robots being electronically controlled apparatus and replacement parts therefore. Semiconductor wafer processing equipment, namely, thermal treatment reactors and chemical vapor deposition reactors, including components and replacement parts therefor.

Abstract

An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

IPC Classes  ?

• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

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IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1,...,S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1,...,S6), and that is configured to record said reference signal as a function of time and to process said reference signal.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/54 - Apparatus specially adapted for continuous coating
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• C23C 16/40 - Oxides

Abstract

A method of contactlessly advancing a substrate (140), comprising: -providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; -providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; -bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; -providing a substrate (140) in between the first wall (120) and the second wall (130); and 1 -allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/54 - Apparatus specially adapted for continuous coating
• B65G 51/02 - Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases
• B65G 49/06 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
• C03B 35/24 - Transporting hot glass sheets on a fluid support bed, e.g. on molten metal on a gas support bed

Abstract

A method, comprising: - providing a process space atmosphere at a process space atmosphere pressure; - providing an exterior atmosphere at an exterior atmosphere pressure that is different from the process space atmosphere pressure; - providing a passage via which the exterior atmosphere is in open communication with the process space atmosphere, and via which substrates are exchangeable between the exterior atmosphere and the process space atmosphere; - injecting an exchange fluid into the passage at at least one exchange fluid injection point, so as to effect a flow of exchange fluid that extends through at least a part of the passage, wherein said flow is directed towards - the exterior in case the exterior atmosphere pressure is greater than the process space atmosphere pressure; or - the process space in case the exterior atmosphere pressure is smaller than the process space atmosphere pressure.

IPC Classes  ?

• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

An apparatus (100) comprising: - a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T); - a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; and - a plurality of gas exhaust channels (110), provided in both said lateral tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations