The present invention relates to a deposition unit of a reactor for the epitaxial deposition of semiconductor films on a substrate, wherein selected internal parts of said unit are provided with one or more layers of a monocrystalline, chemically inert material suitable to operate at temperatures up to 1700° C. and adapted to inhibit dendritic parasitic growth of semiconductor agglomerates on said internal parts. The present invention also relates to an epitaxial reactor comprising one or more deposition units as hereinbefore described.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present invention relates to a casing assembly of a reactor for the epitaxial deposition of semiconductor films on a substrate. The casing assembly comprises an inner and an outer casing made of quartz and connected by at least two flanges made of engineering plastics. The invention also relates to a reaction chamber enclosed by said casing assembly, and a reactor employing at least one of said reaction chambers.
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/10 - Heating of the reaction chamber or the substrate
3.
AUTOMATION SYSTEM FOR A REMOVABLE REACTION UNIT OF AN EPITAXIAL REACTOR
The present invention relates to an automated handling machine for the handling of removable reaction units for preventive maintenance operations, where said reaction units may be used in reactors for the epitaxial deposition of semiconductor films on substrates. The present invention further relates to a removable reaction unit of a reactor adapted to cooperate with the automated handling machines hereinbefore described, and an assembly incorporating said reaction unit and said automated handling machines.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a reaction chamber comprising a removable reaction unit and a susceptive casing. The present invention further relates to a reactor incorporating said reaction chamber, and to an assembly comprising said reactor. Additionally, the present invention relates to a method adapted to reduce the preventive maintenance times of the reactor hereinbefore described, and to the use of said reactor in the homoepitaxial or heteroepitaxial deposition of silicon carbide or gallium nitride films on a semiconductor substrate.
The present invention relates to a multi-chamber assembly for the handling and storage of removable reaction units for preventive maintenance operations, where said reaction units are used in reactors for the epitaxial deposition of semiconductor films on substrates. The present invention further relates to a reactor assembly integrating an epitaxial reactor for the deposition of semiconductor films on substrates, and the multi-chamber assembly hereinbefore described.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention relates to a reactor suitable for the epitaxial deposition of a semiconductor film on a substrate and adapted to reduce cool down times of the reactor after operation. The reactor features a reaction chamber and a thermal insulation system. The latter comprises a plurality of thermally insulating components and at least one actuator adapted to displace at least one of the thermally insulating components to minimize or maximize the thermal insulation of the reaction chamber as needed. The present invention further relates to a use of the reactor hereinbefore described and to a method for operating the same.
The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426B) thereof at least a protrusion (428A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
The innovative reactor comprises: a first reaction chamber, a second reaction chamber, an induction heating system for the reaction chambers, and a liquid flow cooling system for the reaction chambers. According to some designs, the cooling system comprises a reservoir that is designed to contain coolant and that is divided into a first reservoir section and a second reservoir section in fluidic communication with each other. The two reaction chambers are typically located in two side-by-side but separate spaces.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/08 - Reaction chambersSelection of materials therefor
C30B 25/10 - Heating of the reaction chamber or the substrate
9.
ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL DEPOSITION REACTORS
The present invention discloses a method for measuring and controlling the angular speed of a substrate in an epitaxial reactor for semiconductor film deposition. The present invention further discloses an assembly suitable to execute said method, as well as a reaction chamber and a reactor comprising said assembly. In particular, though not exclusively, the above assembly, reaction chamber, and method may be used in a hot-wall, crossflow reactor for the epitaxial deposition of silicon, silicon carbide or gallium nitride.
Apparatus for manufacturing semiconductor devices comprising a substrate and a film applied onto the substrate by a chemical-vapor-deposition process, comprising: a chamber containing a reaction and deposition zone in which at least one substrate is arranged, and comprising at least a wall delimiting the reaction and deposition zone; a first gas source for supplying process gas flow into the reaction and deposition zone in a first direction; and a second gas source for supplying inert gas into the reaction and deposition zone in a second direction. The at least a wall of the chamber comprises holes on the reaction and deposition zone, which are in fluid communication with the second gas source and are configured to introduce the inert gas into the reaction and deposition zone to form a gas layer separating at least a portion of the at least a wall from contact by the flow of process gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
11.
WAFER CASSETTE LOADING AND UNLOADING SYSTEM FOR AN EPITAXIAL REACTION AND AN EPITAXIAL REACTOR
A system for loading and unloading wafer cassettes for an epitaxial reactor, the system includes a carousel platform, configured to transport at least one cassette, wherein the carousel platform is pivotally able to be connected to the epitaxial reactor around a carousel axis; a carousel actuator, configured to drive the rotation of the carousel platform around the carousel axis in relation to the epitaxial reactor; at least one support platform, suitable to support at least one cassette, wherein at least one support platform is pivotally connected to the carousel platform around a rotation axis that differs from the carousel axis; a rotation actuator, configured to drive the rotation of at least one support platform around the rotation axis relative to the carousel platform.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
12.
REACTOR FOR EPITAXIAL DEPOSITION OF SEMICONDUCTOR MATERIAL ON SUBSTRATES WITH SLIDING SLEDGE FOR REACTION CHAMBER
The innovative reactor is used for epitaxial deposition of semiconductor material on substrates and comprises a reaction chamber extending along a longitudinal direction, a sledge adapted to support the reaction chamber or a portion of the reaction chamber, and a tube extending along the longitudinal direction and adapted to house the reaction chamber and the sledge supporting the reaction chamber; the sledge is adapted to slide along the longitudinal direction so as to extract/insert the reaction chamber from/into the tube when the reactor is in a non-operational condition.
A system for loading and unloading wafers into a reaction chamber of an epitaxial reactor, the system comprising a handling robot; a linear actuator, extended along a translation axis, wherein the handling robot is configured to transfer a wafer to the linear actuator, and wherein the linear actuator is configured to receive the wafer from the handling robot and to move the wafer along the translation axis so as to place the wafer inside the reaction chamber.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B25J 11/00 - Manipulators not otherwise provided for
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Apparatus for manufacturing semiconductor devices comprising a substrate and a film applied onto the substrate by a chemical-vapor-deposition (CVD) process, comprising: a process chamber in which to arrange substrates in a linear formation along a first axis and according to an orientation in which the substrates lie in parallel planes orthogonal to the first axis; a heating system for heating the process chamber to a predetermined temperature; a delivering unit for delivering process gas to the process chamber, in which the process gas undergoes a CVD process to form a film on each substrate of the linear formation; an exhaust gas extraction unit for extracting process exhaust gas from the process chamber; and a case enclosing the process chamber, which is configured to be traversed by gas flow that moves along a second axis transversal to the first axis and across the substrates' linear formation in the process chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
16.
METHOD FOR REMOVING LAYERS OF SILICON CARBIDE, AS WELL AS PROCESS AND APPARATUS FOR CLEANING EPITAXIAL REACTOR COMPONENTS
The innovative method is for removing a silicon carbide layer from a bulk piece; the bulk piece comprises a graphite substrate underlying the silicon carbide layer; the method comprises in succession the steps of: a) submerging the bulk piece in a first solution containing nitric acid, b) submerging the bulk piece in a second solution containing hydrofluoric acid and an oxidizing agent, and typically c) submerging the bulk piece in a third solution containing preferably only or essentially deionized water until the layer detaches from the piece; this method can advantageously be used to clean components of an epitaxial reactor e.g. after their use in the reactor in silicon carbide deposition processes.
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
17.
REACTION CHAMBER WITH COVERING SYSTEM AND EPITAXIAL REACTOR
The reaction chamber (100) comprises a covering system (90) that is located within its cavity (101) and comprises at least one lower covering element (120) resting on a lower wall of the cavity, and an upper covering element (130) resting on the lower covering element (120); the lower covering element (120) and the upper covering element (130) define an insulated inner space to accommodate at least one substrate, and make four walls surrounding this inner space and are spaced apart from the cavity walls; the walls of the chamber (100) are typically made of quartz and the covering system (90) is typically made of quartz.
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 25/10 - Heating of the reaction chamber or the substrate
The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate; the gaseous mixture comprises or consists of: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise to n-type doping; the dopant substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface made of silicon carbide of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, the reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa; the substrate is placed inside the reaction chamber in a region where trends in availability respectively of Si, C and N are all decreasing and where temperature is within a deposition temperature range.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The tool (4000) for handling substrates (3000) comprises a fork (4100); the fork (4100) comprises two arms (4120, 4140) configured to directly or indirectly grip or support one or more substrates (3000) by applying by contact lateral and/or vertical force when in use; there is provided a screen (4500) fixed or fixable to the fork (4100) so as to be overhanging at distance the substrate(s) (3000) when, in use, it/they is/are gripped or supported by the fork (4100).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
20.
Substrate support device for a reaction chamber of an epitaxial reactor with gas flow rotation, reaction chamber and epitaxial reactor
The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.
The reaction chamber (100) comprises a covering system (90) that is located within its cavity (101) and comprises at least one lower covering element (120) resting on a lower wall of the cavity, and an upper covering element (130) resting on the lower covering element (120); the lower covering element (120) and the upper covering element (130) define an insulated inner space to accommodate at least one substrate, and make four walls surrounding this inner space and are spaced apart from the cavity walls; the walls of the chamber (100) are typically made of quartz and the covering system (90) is typically made of quartz.
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
B08B 5/04 - Cleaning by suction, with or without auxiliary action
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
23.
TREATING ARRANGEMENT WITH STORAGE CHAMBER AND EPITAXIAL REACTOR
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
C30B 25/10 - Heating of the reaction chamber or the substrate
25.
METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR
The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate; the gaseous mixture comprises or consists of: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise to n-type doping; the dopant substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface made of silicon carbide of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, the reaction chamber is at a temperature comprised in the range between 1450°C and 1800°C and at a pressure comprised in the range between 5 kPa and 30 kPa; the substrate is placed inside the reaction chamber in a region where trends in availability respectively of Si, C and N are all decreasing and where temperature is within a deposition temperature range.
The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
27.
Reaction chamber for a deposition reactor with interspace and lower closing element and reactor
The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a second upper region of the tube (110) to facilitate circulation of the flowing liquid in the interspace (112).
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H05B 6/44 - Coil arrangements having more than one coil or coil segment
29.
Reaction chamber comprising a rotating element for the deposition of a semiconductor material
The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
C30B 25/10 - Heating of the reaction chamber or the substrate
30.
TOOL FOR HANDLING SUBSTRATES WITH OVERHEAD SCREEN AND RELEVANT HANDLING METHODS AND EPITAXIAL REACTOR
The tool (4000) for handling substrates (3000) comprises a fork (4100); the fork (4100) comprises two arms (4120, 4140) configured to directly or indirectly grip or support one or more substrates (3000) by applying by contact lateral and/or vertical force when in use; there is provided a screen (4500) fixed or fixable to the fork (4100) so as to be overhanging at distance the substrate(s) (3000) when, in use, it/they is/are gripped or supported by the fork (4100).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
31.
Reactor for epitaxial deposition with a heating inductor with movable turns
The present invention relates to a heating method for a reactor (1) for epitaxial deposition; the reactor (1) comprises a susceptor (2) and an inductor (4); the inductor (4) is adapted to heat the susceptor (2) by electromagnetic induction when it is electrically powered; the inductor (4) comprises a plurality of turns (41-47); during heating of the susceptor (2) from a first temperature to a second temperature, the position of one or more turns (43) of the inductor (4) with respect to the susceptor (2) and to the other turns of the inductor (4) is changed. The turns (43) are actuated by means of an appropriate actuation system (61, 62, 63).
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
32.
INDUCTIVELY HEATABLE SUSCEPTOR AND EPITAXIAL DEPOSITION REACTOR
The present invention concerns a susceptor comprising a disc-shaped portion (21) and a cylindrical or conical portion (22); the disc-shaped portion (21) is used to (directly or indirectly) support one or more substrates to be subjected to epitaxial deposition inside a reaction chamber of an epitaxial deposition reactor; the cylindrical or conical portion (22) is used to contribute to the heating of the disc-shaped portion (21); thanks to the configuration of the susceptor, it is possible to heat the disc-shaped portion (21) to a very uniform temperature; in fact, for example, the heating of the susceptor can be obtained through a first inductor (4) adapted to directly heat the disc-shaped portion (21), in particular its outer annular zone, and a second inductor (5) adapted to directly heat the cylindrical or conical portion (22) and indirectly heat the disc-shaped portion (21), in particular its central zone.
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
33.
SUBSTRATE SUPPORT DEVICE FOR A REACTION CHAMBER OF AN EPITAXIAL REACTOR WITH GAS FLOW ROTATION, REACTION CHAMBER AND EPITAXIAL REACTOR
The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc- shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lower!y positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
34.
TREATING ARRANGEMENT WITH TRANSFER CHAMBER AND EPITAXIAL REACTOR
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load- lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.
F27B 17/00 - Furnaces of a kind not covered by any of groups
F27D 3/12 - Travelling or movable supports or containers for the charge
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Equipment for semiconductor manufacturing including CVD
(chemical vapor deposition) and MOCVD (metallorganic)
epitaxial reactors, bubblers for low volatile semiconductor
precursors; physical vapor transport (PVT) sublimators for
compound materials growth, high temperature chemical vapor
deposition (HTCVD) reactors for compound materials growth,
LPCVD (low pressure chemical vapor deposition) reactors,
equipment for high temperature wafer treatment. Epitaxially coated semiconductor wafers; operational
software; software for the control of equipment for
semiconductor manufacturing. Equipment engineering for semiconductor manufacturing.
38.
REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER CLOSING ELEMENT AND REACTOR
The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a second upper region of the tube (110) to facilitate circulation of the flowing liquid in the interspace (112).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/08 - Reaction chambersSelection of materials therefor
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
40.
REACTION CHAMBER FOR AN EPITAXIAL REACTOR OF SEMICONDUCTOR MATERIAL WITH NON-UNIFORM LONGITUDINAL SECTION AND REACTOR
The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.
C23C 14/54 - Controlling or regulating the coating process
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Equipment for semiconductor manufacturing including but not
limited to: CVD (chemical vapor deposition) and MOCVD
(metallorganic) epitaxial reactors, bubblers for low
volatile semiconductor precursors; physical vapor transport
(PVT) sublimators for compound materials growth, high
temperature chemical vapor deposition (HTCVD) reactors for
compound materials growth, LPCVD (Low Pressure Chemical
Vapor Deposition) reactors, equipment for high temperature
wafer treatment. Epitaxially coated semiconductor wafers; operational
software; software for the control of equipment for
semiconductor manufacturing. Equipment engineering for semiconductor manufacturing.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Equipment for semiconductor manufacturing, namely, CVD (Chemical Vapor Deposition) and MOCVD (Metallorganic) epitaxial reactors, bubblers for low volatile semiconductor precursors; physical vapor transport (PVT) sublimators for compound materials growth, high temperature chemical vapor deposition (HTCVD) reactors for compound materials growth, LPCVD (Low Pressure Chemical Vapor Deposition) reactors Epitaxially coated semiconductor wafers and downloadable and/or recorded operational software; downloadable and/or recorded software for controlling equipment for semiconductor manufacturing Equipment engineering, namely, installation, maintenance and repair for semiconductor manufacturing equipment
43.
DEPOSITION REACTOR WITH INDUCTORS AND ELECTROMAGNETIC SHIELDS
The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).
C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
C30B 13/20 - Heating of the molten zone by induction, e.g. hot wire technique
C30B 13/30 - Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fieldsControlling the section of the crystal
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
H05B 6/44 - Coil arrangements having more than one coil or coil segment
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Semiconductor manufacturing equipment, including but not limited to: CVD (chemical vapour deposition) and MOCVD (metal organic) epitaxial reactors, scrubbers for low-volatility semiconductor precursors; Physical vapour transport (PVT) sublimers for growing compounds, high-temperature reactors for chemical vapour deposition (HTCVD) for growing compounds, LPCVD (low-pressure chemical vapour deposition) reactors, high-temperature wafer treatment apparatus. Semiconducting wafers with epitaxial coating; Computer operating programs; Computer software for controlling apparatus for the production of semiconductors. Installation, maintenance and repair of apparatus for the production of semiconductors.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Semiconductor manufacturing equipment, including but not limited to: CVD (chemical vapour deposition) and MOCVD (metal organic) epitaxial reactors, scrubbers for low-volatility semiconductor precursors; Physical vapour transport (PVT) sublimers for growing compounds, high-temperature reactors for chemical vapour deposition (HTCVD) for growing compounds, LPCVD (low-pressure chemical vapour deposition) reactors, high-temperature wafer treatment apparatus. Semiconducting wafers with epitaxial coating; Computer operating programs; Computer software for controlling apparatus for the production of semiconductors. Installation, maintenance and repair of apparatus for the production of semiconductors.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Equipment for semiconductor manufacturing, namely, CVD (Chemical Vapor Deposition) and MOCVD (Metallorganic) epitaxial reactors, bubblers for low volatile semiconductor precursors; physical vapor transport (PVT) sublimators for compound materials growth, high temperature chemical vapor deposition (HTCVD) reactors for compound materials growth, LPCVD (Low Pressure Chemical Vapor Deposition) reactors; equipment for high temperature wafer treatment, namely, semiconductor wafer processing equipment Epitaxially coated semiconductor wafers and downloadable and/or recorded operational software; downloadable and/or recorded software for controlling equipment for semiconductor manufacturing Equipment engineering for semiconductor manufacturing
47.
Epitaxial deposition reactor with reflector external to the reaction chamber and cooling method of a susceptor and substrates
The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates (100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates (100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).
C30B 25/08 - Reaction chambersSelection of materials therefor
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
48.
Susceptor with substrate clamped by underpressure, and reactor for epitaxial deposition
The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion (11, 12) which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket (200) where a substrate (100) to be subjected to an epitaxial deposition process is placed; the pocket (200) has a bottom; one or more conduits (13) fluidically connected to an intake system (300) open on the bottom of the pocket (200); when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the substrate (100) remains adhering to the bottom of the pocket (200). In particular: the upper body 12) superiorly has the pocket (200), the conduits (13) vertically cross only the upper body (12), the conduits (13) are fluidically connected to a plenum (14) located between the lower body (11) and the upper body (12) below the pocket (200), the plenum (14) is fluidically connected to the intake system (300); whereby when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the lower body (11) and the upper body (12) remain united.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
49.
HEATING METHOD FOR A REACTOR FOR EPITAXIAL DEPOSITION AND REACTOR FOR EPITAXIAL DEPOSITION
The present invention relates to a heating method for a reactor (1) for epitaxial deposition; the reactor (1) comprises a susceptor (2) and an inductor (4); the inductor (4) is adapted to heat the susceptor (2) by electromagnetic induction when it is electrically powered; the inductor (4) comprises a plurality of turns (41-47); during heating of the susceptor (2) from a first temperature to a second temperature, the position of one or more turns (43) of the inductor (4) with respect to the susceptor (2) and to the other turns of the inductor (4) is changed. The turns (43) are actuated by means of an appropriate actuation system (61, 62, 63).
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
50.
EPITAXIAL DEPOSITION REACTOR WITH REFLECTOR EXTERNAL TO THE REACTION CHAMBER AND COOLING METHOD OF A SUSCEPTOR AND SUBSTRATES
The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates ( 100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates ( 100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
51.
SUSCEPTOR WITH SUBSTRATE CLAMPED BY UNDERPRESSURE, AND REACTOR FOR EPITAXIAL DEPOSITION
The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion (11, 12) which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket (200) where a substrate (100) to be subjected to an epitaxial deposition process is placed; the pocket (200) has a bottom; one or more conduits (13) fluidically connected to an intake system (300) open on the bottom of the pocket (200); when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the substrate (100) remains adhering to the bottom of the pocket (200). In particular: the upper body (12) superiorly has the pocket (200), the conduits (13) vertically cross only the upper body (12), the conduits (13) are fluidically connected to a plenum (14) located between the lower body (11) and the upper body (12) below the pocket (200), the plenum (14) is fluidically connected to the intake system (300); whereby when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the lower body (11) and the upper body (12) remain united.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
52.
INDUCTIVELY HEATABLE SUSCEPTOR AND EPITAXIAL DEPOSITION REACTOR
The present invention concerns a susceptor comprising a disc-shaped portion (21) and a cylindrical or conical portion (22); the disc-shaped portion (21) is used to (directly or indirectly) support one or more substrates to be subjected to epitaxial deposition inside a reaction chamber of an epitaxial deposition reactor; the cylindrical or conical portion (22) is used to contribute to the heating of the disc-shaped portion (21); thanks to the configuration of the susceptor, it is possible to heat the disc-shaped portion (21) to a very uniform temperature; in fact, for example, the heating of the susceptor can be obtained through a first inductor (4) adapted to directly heat the disc-shaped portion (21), in particular its outer annular zone, and a second inductor (5) adapted to directly heat the cylindrical or conical portion (22) and indirectly heat the disc-shaped portion (21), in particular its central zone.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
53.
Tool for manipulating substrates, manipulation method and epitaxial reactor
The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B25J 15/06 - Gripping heads with vacuum or magnetic holding means
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
56.
TOOL FOR MANIPULATING SUBSTRATES, MANIPULATION METHOD AND EPITAXIAL REACTOR
The tool (1 ) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1 ) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
57.
REACTION CHAMBER FOR EPITAXIAL GROWTH WITH A LOADING/UNLOADING DEVICE AND REACTOR
A reaction chamber of a reactor for epitaxial growth comprises: - a wall (1) with a recess, - a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1), - a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and - a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
58.
SUSCEPTOR WITH CURVED AND CONCENTRIC GROOVES ON THE SUBSTRATES SUPPORT
The present invention relates to a susceptor for an epitaxial growth reactor; it substantially consists of a body (601) having a face (602) which comprises at least one zone (603) adapted to receive a substrate to be subjected to epitaxial growth; the zone (603) either has or is associated with a resting surface (604) for resting said substrate; the resting surface (604) is provided with patterns which comprise a plurality of curved groove stretches (606) having their center substantially in the same location (605) as said resting surface (604).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
59.
SUSCEPTOR WITH ARCHED SHAPE GROOVES ON THE SUBSTRATES SUPPORT SURFACE
The present invention relates to a susceptor for an epitaxial growth reactor; it substantially consists of a body (601) having a face (602) which comprises at least one zone (603) adapted to receive a substrate to be subjected to epitaxial growth; the zone (603) either has or is associated with a resting surface (604) for resting said substrate; the resting surface (604) is provided with patterns which comprise at least three pluralities (605A, 605B, 605C) of arch-shaped grooves (606); in particular, the concavity of said grooves (606) faces towards the edge of the resting surface (604).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention relates to a susceptor for a reactor for epitaxial growth, consisting of a disc-shaped body (20, 30) made of graphite having a first face and a second face; the first face comprises at least one zone, in particular a circular-shaped recess (21) or relief (31) adapted to receive a substrate to be subjected to epitaxial growth; the first face exposes a first upper surface (22, 32) corresponding to such a zone (21, 31) and a second upper surface (23, 33) which surrounds such a zone (21, 31); the second face exposes a lower surface (24, 34); the second upper surface (22, 33) and the lower surface (24, 34) are coated with a layer of silicon carbide; so, the outward curvature of the susceptor is limited during the life thereof, i.e. after having been used for many processes of epitaxial growth of silicon carbide.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
62.
Reaction chamber of an epitaxial reactor and reactor that uses said chamber
The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 25/10 - Heating of the reaction chamber or the substrate
The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1 ) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1 D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1 B, 1 C, 1 D) in such a manner as to form a counterwall and to be a wall of said zone (3).
C30B 25/08 - Reaction chambersSelection of materials therefor
C30B 25/10 - Heating of the reaction chamber or the substrate
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
The present invention relates to a reaction chamber of an epitaxial reactor, consisting essentially of a hollow quartz piece; the hollow quartz piece comprises a quartz piece section (1) having the shape of a cylinder or a prism or a cone or a pyramid and an axial through hole (2) provided in said quartz piece section (1 ); the quartz piece section (1 ) is adapted to define, according to two of three directions, a reaction and deposition zone (3) and to house at least one susceptor (4) to be heated inside the axial through hole (2). The chamber is provided with a reflecting layer (5) made of a quartz-based material and adapted to reflect back infrared radiations emitted by the susceptor (4); the reflecting layer (5) is applied to said quartz piece section (1 ) and/or to a quartz component of the reaction chamber.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
65.
TOOL FOR HANDLING A SUSCEPTOR, AND MACHINE FOR TREATING SUBSTRATES AND/OR WAFERS USING IT
The tool (1) according to the present invention is used for handling a susceptor (9) of a machine for treating substrates and/or wafers; the susceptor (9) has a disc-like shape and is adapted to support substrates and/or wafers; the tool (1 ) comprises a suction device (2) adapted to come in contact with the top face (91) of the susceptor (9) in order to grip and hold the latter by suction.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The present invention relates to a reactor for growing crystals of a compound material; the reactor comprises: a substantially cylindrical reaction chamber (1 ), which is adapted to be arranged in a manner such that the cylinder axis is substantially vertical and which is provided with walls (2, 3), the inner surfaces of which define at least partly an inner cavity (10) of the chamber (1), means adapted to heat said reaction chamber (1), in particular said cavity (10); the reaction chamber (1 ) comprises inlet means (4, 8) for feeding several precursor gases of said compound material into said cavity (10), which are located in the lower zone of the chamber (1), an assembly (6) adapted to hold at its bottom a seed or a substrate on which said growth takes place and located in the upper zone of the chamber (1 ), so that at least said seed or substrate and the growing crystal are kept within said cavity (10), outlet means (5) for discharging exhaust gases from said cavity (10), which are arranged around said assembly (6) in the upper zone of said chamber (1); the inlet means (4, 8) comprise: an opening (4) obtained in a bottom wall (2) of the chamber (1 ), an injector device (8) arranged outside said cavity (10) and adapted to inject at least a first and a second precursor gases of said compound material simultaneously into said cavity (10) through said opening (4); said injector device (8) is adapted to keep said two precursor gases cold and separate from each other until injection takes place.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a reactor (1) for growing crystals of a material, in particular of silicon carbide or a third-group nitride; it comprises a chamber (2) divided into a first zone (21) and a second zone (22), said division being accomplished through a dividing wall (3) having at least one opening (31 ) which puts said first and second zones (21,22) in communication with each other, injection means (41,42) adapted to supply said first zone (21) with at least one precursor gas of said material, exhaust means (5) adapted to discharge exhaust gases from said second zone (22), support means (6) located in said second zone (22) and adapted to support a growing crystal, and heating means (71,72) adapted to keep said first and second zones (21,22) at a temperature between 2000°C and 2600°C.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 25/10 - Heating of the reaction chamber or the substrate
The process according to the present invention is adapted to produce a silicon carbide substrate for microelectronic applications; it comprises the following steps: a) providing a conductive silicon carbide wafer, and b) growing an epitaxial layer of intrinsic silicon carbide on said wafer.
The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and/or arc made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.
The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).
H05B 6/10 - Induction heating apparatus, other than furnaces, for specific applications
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
09 - Scientific and electric apparatus and instruments
Goods & Services
EPITAXIAL REACTORS AND PARTS THEREFORE FOR USE IN DEPOSITING LAYERS OF SEMICONDUCTOR MATERIAL ONTO SEMICONDUCTOR WAFER SURFACES IN THE PRODUCTION OF ELECTRONIC COMPONENTS, SUCH AS TRANSISTORS, DIODES, AND INTEGRATED CIRCUITS, OPERATIONAL SOFTWARE FOR EPITAXIAL REACTORS
