ASML Netherlands B.V.

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G03F 7/20 - ExposureApparatus therefor 3,891
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor 1,017
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically 774
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma 542
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1.

SETUP AND CONTROL METHODS FOR A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES

      
Application Number 18844478
Status Pending
Filing Date 2023-02-22
First Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Hauptmann, Marc
  • Meijerink, Rick Jeroen
  • Zeng, Si-Han
  • Bao, Jiazi

Abstract

A method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method includes determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

2.

METHOD FOR DETERMINING DEFECTIVENESS OF PATTERN BASED ON AFTER DEVELOPMENT IMAGE

      
Application Number 19029961
Status Pending
Filing Date 2025-01-17
First Publication Date 2025-07-24
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Kooiman, Marleen
  • Pisarenco, Maxim
  • Slachter, Abraham
  • Maslow, Mark John
  • Oyarzun Rivera, Bernardo Andres
  • Tel, Wim Tjibbo
  • Maas, Ruben Cornelis

Abstract

Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G06T 7/00 - Image analysis
  • G06T 7/33 - Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods

3.

APPARATUS AND METHOD FOR DETERMINING AN ANGULAR REFLECTIVITY PROFILE

      
Application Number 18853674
Status Pending
Filing Date 2023-03-06
First Publication Date 2025-07-24
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Dikkers, Manfred Petrus Johannes Maria
  • Geelen, Paul Jean Maurice
  • Lof, Gerrit Jan Jacob
  • Hinnen, Karel Johannes Gerhardus

Abstract

An apparatus comprising a multilayer structure configured to reflect electromagnetic radiation. The apparatus comprises a sensor configured to detect an angular distribution of the electromagnetic radiation after reflection from the multilayer structure. The apparatus comprises a processor configured to generate a first function at least partially based on the angular distribution of the electromagnetic radiation detected by the sensor. The processor is configured to compare the first function to a plurality of known functions associated with a plurality of known angular reflectivity profiles to identify a second function from the plurality of known functions that is most similar to the first function. The processor is configured to determine an angular reflectivity profile of the multilayer structure at least partially based on a known angular reflectivity profile that is associated with the second function.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/20 - ExposureApparatus therefor

4.

DIRECTLY ACTUATED PATTERNING DEVICE FOR A LITHOGRAPHY APPARATUS

      
Application Number EP2024086755
Publication Number 2025/153282
Status In Force
Filing Date 2024-12-17
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Moliterno, Matthew, Stephen, Beaton
  • Zordan, Enrico

Abstract

Existing lithography apparatuses use a reticle clamp to hold a reticle, and a chuck having actuators and position sensors, for a reticle stage. This requires substantial mass and infrastructure on reticle stage chucks. Advantageously, new reticle motion control systems and methods for a lithography apparatus are described. In contrast to existing lithography apparatuses, the new systems and methods utilize magnetically actuatable targets configured to be coupled to a reticle. Electromagnetic actuators are configured to apply magnetic forces to the magnetically actuatable targets for suspending the patterning device in space in a lithography apparatus, and actuating the magnetically actuatable targets to facilitate contactless precision movements of the reticle for semiconductor lithography.

IPC Classes  ?

5.

METHOD OF DETERMINING OPERATIONAL DATA, COMPUTER PROGRAM AND LITHOGRAPHIC APPARATUS

      
Application Number EP2024086731
Publication Number 2025/153279
Status In Force
Filing Date 2024-12-17
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Gattobigio, Giovanni, Luca
  • Van Den Nieuwelaar, Norbertus, Josephus, Martinus
  • Nagy, István
  • Van Oene, Maarten, Marinus
  • Bloks, Ruud, Hendrikus, Martinus, Johannes
  • Gerritzen, Justin, Johannes, Hermanus
  • Duymelinck, Rob, Engelbertus, Jacobus
  • Van Grotel, Martinus, Franciscus, Adrianus, Maria
  • Migchelbrink, Ferdy
  • Bootsma, Timotheus, Marc, Vincent
  • Wang, Yen-Chieh
  • Malgoezar, Anwar
  • Van Der Hoff, Dennis, Emile

Abstract

Disclosed herein is a computer system configured to perform a method of determining operational data for a control system of a lithographic apparatus, the method comprising: determining initial operational data for use in performing exposure processes on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics of the changed operational data so as to determine changes to the initial operational data that improve the one or more performance metrics; and using operational data with an applied change so as to improve one or more of the performance metrics; wherein: the operational data includes the route of the substrate for performing the exposure processes and the movement of the substrate along the route; and the applied change to the operational data includes a change to the route and/or a change to the acceleration of the substrate along part of the route.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

6.

GAS FLOW REALLOCATION IN LIGHT SOURCE

      
Application Number EP2024085365
Publication Number 2025/153240
Status In Force
Filing Date 2024-12-09
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Frenzel, Alex, James
  • Braaksma, Niels

Abstract

An extreme ultraviolet (EUV) system includes a vessel for generating radiation, a mirror, a gas flow assembly, and an exhaust. The system provides a first gas flow path in the vessel when the system is generating EUV radiation. The system provides a second gas flow path in the vessel when the system is not generating EUV radiation. The system can switch between the first gas flow path and the second gas flow path in a few milliseconds.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

7.

DYNAMICALLY DECOUPLED ION PUMP AND CHARGED-PARTICLE BEAM SYSTEM

      
Application Number EP2025050136
Publication Number 2025/153335
Status In Force
Filing Date 2025-01-04
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Fu, Chenxi
  • Liu, Yu
  • Xi, Qingpo
  • Cao, Qian

Abstract

A connection between an ion pump and a charged-particle beam apparatus includes a flexible conduit connecting the ion pump to the charged-particle beam apparatus. The flexible conduit may have a stiffness of less than 2E4 Newtons per meter. And the flexible conduit may be configured to maintain a vacuum level of less than 1E-6 Torr in the charged-particle beam apparatus.

IPC Classes  ?

  • H01J 37/18 - Vacuum locks
  • F04D 29/60 - MountingAssemblingDisassembling
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

8.

METROLOGY METHOD FOR DETERMINING ONE OR MORE PARAMETERS OF A PERIODIC TARGET ON AN OBJECT AND ASSOCIATED METROLOGY APPARATUS

      
Application Number EP2024087627
Publication Number 2025/153300
Status In Force
Filing Date 2024-12-19
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Nienhuys, Han-Kwang
  • Van Der Post, Sietse, Thijmen
  • El Gawhary, Omar
  • Tinnemans, Patricius, Aloysius, Jacobus

Abstract

A metrology method, and associated metrology apparatus, for determining one or more parameters of a periodic target on an object is disclosed. The periodic target is adjacent to a reference mark having a pitch equal to that of the periodic target. The method comprises projecting radiation onto the object such that a first portion of the radiation is incident on the periodic target and a second portion of the radiation is incident on the reference mark. The method further comprises measuring at least one interference pattern formed by contributions to a single diffraction order from both the first and second portions of radiation. The method further comprises determining the one or more parameters in dependence on the at least one interference pattern.

IPC Classes  ?

  • G03F 7/20 - ExposureApparatus therefor
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined

9.

AUTOMATIC CORRECTION FOR HARDWARE-BASED SEM TOOL TIME OFFSET

      
Application Number EP2024086758
Publication Number 2025/153283
Status In Force
Filing Date 2024-12-17
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Fu, Jiyou
  • Wang, Yongxin
  • Xia, Zhenyang
  • Xiao, Hong

Abstract

A system and method for correction of image offsets in a multi-detector charged particle beam apparatus comprises a plurality of charged particle detectors and a hardware-based time offset correction system. The hardware-based time offset correction system is configured to correct a time difference among detection signals from the plurality of detectors based on a predetermined time offset. The predetermined time offset may be calibrated according to a calibration process.

IPC Classes  ?

  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 37/244 - DetectorsAssociated components or circuits therefor

10.

METHOD OF PREDICTING AN EFFECT OF A MAINTENANCE ACTION IN PRODUCTION OF INTEGRATED CIRCUITS AND ASSOCIATED APPARATUS

      
Application Number EP2024086477
Publication Number 2025/153272
Status In Force
Filing Date 2024-12-16
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Aarden, Frans, Bernard

Abstract

Disclosed is a method of predicting an effect of a potential substrate table maintenance action relating to a substrate table of a lithographic apparatus. The method comprises obtaining per-layer substrate loading distortion status data relating to a distortion of a substrate or group of substrates resulting from loading the substrate onto said substrate table when exposing one or more layers; obtaining at least one per-layer sensitivity value describing a sensitivity of a substrate loading distortion induced error metric to said substrate loading distortion status data for one or more respective layers on said substrate; and determining the effect of a potential substrate table maintenance action on said substrate loading distortion induced error metric based on said per-layer substrate loading distortion status data and said at least one per-layer sensitivity value.

IPC Classes  ?

11.

METHOD AND DEVICE FOR TUNING FLOW VELOCITY PROFILE

      
Application Number EP2024085367
Publication Number 2025/153242
Status In Force
Filing Date 2024-12-09
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ma, Yue
  • Yavuz, Mehmet, Altug
  • Van Den Dungen, Clemens, Johannes, Gerardus
  • Selvaraj, Richard, Johnson
  • Baumann, Torsten
  • Belekar, Viraj Vilas
  • Sellappan, Prabu
  • Frenzel, Alex, James
  • Braaksma, Niels
  • Wick, John, Charles, Hirschy
  • Stewart Iv, John, Tom

Abstract

A radiation source includes a matter delivery system, an illumination source, and a jet flow generator. The matter delivery system directs target material to a target region. The illumination source irradiates the target material at the target region to generate radiation as an output of the radiation source. The jet flow generator directs a jet flow of a gas to the target region. The jet flow generator includes a flow injector and a diffuser. The flow injector adjusts a velocity profile of the jet flow. The diffuser adjusts a spread of the jet flow.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

12.

MODULAR GAS PURIFICATION SYSTEM FOR RADIATION SOURCE

      
Application Number EP2024085366
Publication Number 2025/153241
Status In Force
Filing Date 2024-12-09
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Millar, William, Craig
  • Burke, Jeremy
  • Tedrow, Jon, David

Abstract

A radiation source includes a chamber and a gas purification apparatus. The chamber includes an irradiation region. The gas purification apparatus includes a gas pathway structure to direct an unpurified gas having contaminants. The gas pathway structure includes a first pathway section and a second pathway section. The first pathway section includes contaminant capture elements to capture the contaminant to produce purified gas. At least a portion of the contaminant capture elements are disposed along a plane that is substantially normal to a drift direction of the unpurified gas at the plane. The second pathway section includes gas cooling elements disposed downstream of the contaminant capture elements. The gas cooling elements cool the purified gas. An orientation of the second pathway structure is such that a drift direction of the purified gas is different from the drift direction of the unpurified gas.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

13.

CLAMPING WITH A REMOVABLE MEMBRANE IN A LITHOGRAPHY APPARATUS

      
Application Number EP2024086643
Publication Number 2025/153278
Status In Force
Filing Date 2024-12-16
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Monkman, Eric, Justin
  • Burroughs, John, Robert
  • Chieda, Michael, Andrew
  • Perez-Falcon, Victor, Antonio
  • Finney, Nathan, Robert
  • Uitterdijk, Tammo
  • Kochersperger, Peter, Conrad
  • Van De Kerkhof, Marcus, Adrianus
  • Stevens, Lucas, Henricus, Johannes
  • Van Eden, Gustaaf, Galein
  • Berghout, Pieter
  • Van De Ven, Emiel, Anton

Abstract

A clamping system is described. The clamping system includes a membrane that functions as an intermediate layer between a reticle (or a wafer) and a clamp in a lithography apparatus. This membrane can be replaced in the field if it experiences wear, for example, instead of having to replace permanent components of the clamp, which is far more difficult. Because the membrane's dimensions are similar to those of a typical reticle, the membrane can be replaced using an existing reticle handling system that is a part of the lithography apparatus. The membrane is relatively thin and compliant compared to the clamp and/or the reticle such that the membrane may be configured to first couple to the reticle and conform to a shape of the reticle, and then couple to the clamp. This way the membrane forms a known tunable interface configured for coupling the reticle to the clamp.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

14.

METHODS AND SYSTEMS TO REDUCE EFFECTS OF UNCERTAIN CONDITIONS FOR RETICLE HEATING

      
Application Number EP2024087924
Publication Number 2025/153303
Status In Force
Filing Date 2024-12-20
Publication Date 2025-07-24
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Paarhuis, Bart, Dinand
  • Moest, Bearrach
  • Van Eekelen, Koen

Abstract

A lithographic apparatus is configured to perform a lithographic process. The lithographic apparatus comprises an illumination system configured to illuminate a reticle and a projection system configured to project an image of the reticle onto a substrate, wherein the illuminating and projection comprise the lithographic process. The lithographic apparatus further comprises a controller configured to reduce effects of non-uniformity of the reticle in the lithographic process. The controller is configured to determine a status of the reticle, identify a model from a plurality of models based on the status, and predict, using the identified model, a thermal deformation associated with the reticle.

IPC Classes  ?

15.

ELECTRICAL CONNECTOR FOR HIGH POWER IN A VACUUM ENVIRONMENT AND METHOD

      
Application Number 18700125
Status Pending
Filing Date 2022-09-28
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Damen, Johannes Wilhelmus
  • Nijsmans, Nick
  • Lénárt, Attila
  • Driessen, Alexander Barbara Jacobus Maria
  • Van Diem, Cornelus Adrianus Aloïsius
  • Quanten, Dirk
  • Van Knippenberg, Martinus Wilhelmus Hendrikus

Abstract

The disclosure provides an electrical connector for high power in a low pressure environment, the connector comprising: a male connection part configured to be connected to a first power interface, a female connection part for receiving the male connection part and configured to be connected to a second power interface, a first conductive shield enclosing the male connection part and the female connection part, the first conductive shield being electrically connected to at least one of the male connection part and the female connection part, and an isolating part enclosing the first conductive shield.

IPC Classes  ?

  • H01R 13/53 - Bases or cases for heavy dutyBases or cases with means for preventing corona or arcing
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • H01R 13/6581 - Shield structure
  • H01R 43/26 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for engaging or disengaging the two parts of a coupling device

16.

METHOD AND APPARATUS FOR ILLUMINATION ADJUSTMENT

      
Application Number 18728004
Status Pending
Filing Date 2022-12-30
First Publication Date 2025-07-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Yoon, Changsik
  • Koolen, Armand Eugene Albert
  • Hoogveld, Jasper Niko Maria
  • Hack, Sjoerd Arthur

Abstract

Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

17.

IMAGING METHOD AND METROLOGY DEVICE

      
Application Number 18853923
Status Pending
Filing Date 2023-03-13
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Coene, Willem Marie Julia Marcel
  • Van Kraaij, Markus Gerardus Martinus Maria
  • Konijnenberg, Alexander Prasetya
  • Den Boef, Arie Jeffrey

Abstract

Disclosed is an imaging method comprising obtaining a set of primary deconvolution kernels or a set of impulse responses relating to an optical system used to capture said image; obtaining said image signal, said image signal being subject to one or more imaging effects including at least one or more non-isoplanatic imaging effects; performing a low-rank approximation on said set of primary deconvolution kernels or impulse responses to determine respectively a set of deconvolution modes or a set of impulse response modes, each deconvolution mode comprising a modal secondary deconvolution kernel and a modal weight function and each impulse response mode comprising a modal impulse response and a modal inverse weight function; obtaining at least approximated imaging effect-free object information related to said object by applying said modal secondary deconvolution kernels and modal weight functions or said modal impulse responses and modal inverse weight functions to said image signal.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G06T 5/10 - Image enhancement or restoration using non-spatial domain filtering
  • G06T 7/00 - Image analysis
  • G06T 7/60 - Analysis of geometric attributes

18.

E-BEAM OPTIMIZATION FOR OVERLAY MEASUREMENT OF BURIED FEATURES

      
Application Number 18853983
Status Pending
Filing Date 2023-03-06
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Gaury, Benoit Herve
  • Huisman, Thomas Jarik
  • Kiers, Antoine Gaston Marie
  • Chen, Guangqing

Abstract

Systems, non-transitory computer readable medium, and methods for determining one or more parameters used by an e-beam for an overlay measurement are disclosed. In some embodiments, the method comprises determining an acquisition time for the overlay measurement of a wafer stack based on a plurality of characteristics of the wafer stack and a plurality of backscattered electron (BSE) yields detected at a plurality of features on the wafer stack. The method also comprises determining the one or more parameters including a landing energy of the e-beam based on optimization of the acquisition time for the overlay measurement.

IPC Classes  ?

  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

19.

METHOD OF FORECASTIG A DRIFT IN A PARAMETER OF INTEREST IN A SEMICONDUCTOR MANAUFACTURING PROCESS

      
Application Number EP2024087002
Publication Number 2025/149331
Status In Force
Filing Date 2024-12-18
Publication Date 2025-07-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Regassa, Tariku Tessema
  • Campo Caicedo, Damian Andres
  • Dos Santos Guzella, Thiago

Abstract

Described is a method for predicting future evolution of a parameter of interest of a manufacturing process for manufacturing integrated circuits, the method comprising: obtaining metrology data relating to the parameter of interest; forecasting a first statistical characteristic of future values of the parameter of interest by applying a first parameter model to the metrology data and subsequently obtaining residuals data of the first parameter model; forecasting a second statistical characteristic of future values of the parameter of interest by applying a second parameter model to the residuals data of the first parameter model; and predicting the future evolution of the parameter of interest of the manufacturing process based on comparison of at least one of the first statistical characteristic and the second statistical characteristic to at least one reference value.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators

20.

METHOD FOR CONTROLLING A MANUFACTURING APPARATUS AND ASSOCIATED APPARATUSES

      
Application Number EP2024087007
Publication Number 2025/149332
Status In Force
Filing Date 2024-12-18
Publication Date 2025-07-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Hlod, Andriy, Vasyliovich
  • Bogers, Roland, Adrianus, Emanuel, Maria
  • Wang, Shu-Jin
  • Schets, Sicco, Ian
  • Shah, Anuj, Mayur
  • Schoonewelle, Hielke
  • Aveklouris, Angelos
  • Shrestha, Pratik
  • Pramodh, Arjun
  • Brouwer, Andreas, Michael
  • Yang, Yuanqing
  • Theeuwes, Thomas
  • Van Ittersum, Ronald
  • Bastenhof, Arno
  • Chaplick, Steven Aaron
  • Urbanczyk, Adam, Jan

Abstract

Disclosed is a method for determining a correction for control of at least one manufacturing apparatus used in a manufacturing process for providing structures to at least one region on a substrate, said region comprising at least a first sub-region and a second sub-region in a common layer. The method comprises obtaining process error data relating to said manufacturing process when forming said first sub-region on a substrate, determining a first on-product error from said process error data, said on-product error relating to an error in formation of said first sub-region; and determining, from said on-product error, a correction for said manufacturing process when forming said second sub-region on said substrate.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

21.

COLOUR SELECTION MODULE

      
Application Number EP2024087166
Publication Number 2025/149338
Status In Force
Filing Date 2024-12-18
Publication Date 2025-07-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Van Voorst, Peter, Danny

Abstract

A colour selection module, for outputting radiation having a desired spectral bandwidth and central wavelength, comprises: a radiation input for receiving an input beam of radiation; a first dispersive arrangement for receiving the input beam of radiation from the radiation input and outputting a first dispersed beam of radiation; a second dispersive arrangement for receiving at least a portion of the first dispersed beam of radiation and outputting a second dispersed beam of radiation; a radiation output arrangement for receiving said second dispersed beam of radiation and outputting said second dispersed beam of radiation from the colour selection module, whereby rotation of the second dispersive arrangement changes a second direction of travel and a second spatial distribution of the second dispersed beam of radiation, and hence spectral bandwidth and central wavelength of said second dispersed beam of radiation received and output by the radiation output arrangement.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G02B 27/10 - Beam splitting or combining systems
  • G01J 3/12 - Generating the spectrumMonochromators

22.

METHODS FOR MEASURING AT LEAST ONE TARGET ON A SUBSTRATE AND ASSOCIATED APPARATUSES AND SUBSTRATE

      
Application Number 18697656
Status Pending
Filing Date 2022-09-23
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Garcia Granda, Miguel
  • Van Den Bos, Karel Hendrik Wouter
  • Jacobs, Jort Adrianus Thomas
  • Yueh, Cheng-Teng

Abstract

Disclosed is a method of determining a correction for a measurement of at least one target on a substrate, the target comprising one or more parameter of interest sensitive sub-targets which are each sensitive to a parameter of interest and one or more parameter of interest insensitive sub-targets which are substantially less sensitive or insensitive to the parameter of interest, the method comprising. The method comprises obtaining a respective first measurement parameter value relating to each of said one or more parameter of interest sensitive sub-targets; obtaining a respective second measurement parameter value relating to each of said one or more parameter of interest insensitive sub-targets; and determining a correction for each said first measurement parameter value using said second measurement parameter values and/or detecting the presence of an effect likely to impact accuracy of first measurement parameter values from said second measurement parameter values.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

23.

WAFER EDGE INSPECTION OF CHARGED PARTICLE INSPECTION SYSTEM

      
Application Number 18854000
Status Pending
Filing Date 2023-03-13
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Gong, Zizhou
  • Ji, Xiaoyu
  • Krupin, Oleg
  • Ren, Weiming

Abstract

An improved system is disclosed for wafer outer portion inspection in a charged particle beam system, such as a scanning electron microscope (SEM). The system uses multiple conductive rings around the wafer to correct an e-field distortion occurring at the wafer outer portion. The rings are applied with different complimentary voltages in order achieve a precise compensation of the e-field distortion.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
  • H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support

24.

APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS

      
Application Number 19029123
Status Pending
Filing Date 2025-01-17
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Liu, Xuedong
  • Hu, Xuerang
  • Chen, Zhongwei

Abstract

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/06 - Electron sourcesElectron guns
  • H01J 37/10 - Lenses
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

25.

ADC CALIBRATION FOR MICROSCOPY

      
Application Number 19170979
Status Pending
Filing Date 2025-04-04
First Publication Date 2025-07-17
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Mook, Hindrik Willem
  • Dave, Dhara
  • Stylianou, Antri
  • Beugin, Vincent Claude
  • Brandt, Pieter Lucas
  • Martinez Negrete Gasque, Diego

Abstract

A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each of the ADCs, at least one statistical value from a distribution of the image data output by the ADC; and changing at least one setting of at least one of the ADCs based on the calculated at least one statistical values so as to compensate for any mismatch between the at least one statistical value of the ADCs.

IPC Classes  ?

  • H03M 1/10 - Calibration or testing
  • H01J 37/22 - Optical or photographic arrangements associated with the tube
  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for

26.

IMPROVEMENTS TO LITHOGRAPHIC METHODS AND APPARATUS

      
Application Number EP2024084309
Publication Number 2025/149231
Status In Force
Filing Date 2024-12-02
Publication Date 2025-07-17
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Imponente, Giovanni
  • De Winter, Laurentius, Cornelius
  • Zikos, Georgios
  • Duriau, Edouard, André, Marie, Louis

Abstract

A method for determining an impact of a variation of a first pupil from a target pupil (for example a dipole) in a first direction within a two-dimensional field is disclosed. The method comprises carrying out the following for a plurality of positions within the field. First, reference and signal measurements are made of a quantity indicative of a position/orientation of an aerial image using a reference pupil and the first pupil. Second, a first error is determined as a difference between the reference measurement and the signal measurement. Third, the first error is corrected for a difference that is attributable to the difference between the reference pupil and the target pupil so as to form a second error. The second error quantifies the difference attributable to the variation of the first pupil from the target pupil across the field.

IPC Classes  ?

  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

27.

PELLICLE FOR EUV LITHOGRAPHY

      
Application Number 18844707
Status Pending
Filing Date 2023-02-28
First Publication Date 2025-07-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Vermeulen, Paul Alexander
  • Hildenbrand, Volker Dirk
  • Donmez Noyan, Inci

Abstract

A pellicle for EUV lithography includes a core layer having silicon and having at least one non-oxidised surface, and a cap layer at at least one major surface of the core layer. The cap layer includes carbon and/or boron. The cap layer may be removed before or during an exposure operation.

IPC Classes  ?

  • G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

28.

HIGH PRESSURE COUPLING ASSEMBLY

      
Application Number 18853562
Status Pending
Filing Date 2023-03-20
First Publication Date 2025-07-10
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Kapadia, Rahul Sunil
  • Swerdlow, Ethan Marcus
  • Vaschenko, Georgiy Olegovich
  • Oliver, Ian Roger
  • Rajyaguru, Chirag
  • Trees, Dietmar Uwe Hubert
  • Sams, Benjamin Andrew
  • Driessen, Theodorus Wilhelmus
  • Telkar, Vikas Giridhar
  • Ershov, Alexander Igorevich

Abstract

A target material generator includes a fluid flow path between reservoir system and a nozzle supply system, and a coupling assembly in the fluid flow path. The target material generator is a part of an extreme ultraviolet light source. The coupling assembly includes a first fitting coupled to a second fitting to thereby form a flow conduit along the fluid flow path, wherein a seal is formed between the first fitting and the second fitting, and a sleeve disposed along inner walls of the flow conduit and between the seal and the flow conduit such that a contaminant trap is formed between the sleeve and the seal.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
  • F16L 21/00 - Joints with sleeve or socket

29.

SYSTEM AND METHOD FOR DEFECT INSPECTION USING VOLTAGE CONTRAST IN A CHARGED PARTICLE SYSTEM

      
Application Number 19011094
Status Pending
Filing Date 2025-01-06
First Publication Date 2025-07-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Fang, Wei
  • Zhou, Zhengwei
  • Pu, Lingling

Abstract

A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 37/244 - DetectorsAssociated components or circuits therefor
  • H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes

30.

DYNAMIC DETERMINATION OF A SAMPLE INSPECTION RECIPE OF CHARGED PARTICLE BEAM INSPECTION

      
Application Number 19091684
Status Pending
Filing Date 2025-03-26
First Publication Date 2025-07-10
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Chen, Zhong-Wei
  • Jau, Jack
  • Fang, Wei
  • Kuan, Chiyan

Abstract

Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

31.

COOLING DEVICE FOR COOLING A POSITION-SENSITIVE COMPONENT OF A LITHOGRAPHY SYSTEM

      
Application Number 19092004
Status Pending
Filing Date 2025-03-27
First Publication Date 2025-07-10
Owner
  • Carl Zeiss SMT GmbH (Germany)
  • ASML Netherlands B.V. (Netherlands)
Inventor
  • Fetzer, Matthias
  • Mettenleiter, Luca
  • Steijns, Richard

Abstract

A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).

IPC Classes  ?

  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

32.

LITHOGRAPHIC APPARATUS AND ASSOCIATED METHOD

      
Application Number EP2024084877
Publication Number 2025/146282
Status In Force
Filing Date 2024-12-05
Publication Date 2025-07-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Gang, Tian
  • Finders, Jozef, Maria
  • Mcnamara, John, Martin
  • Van Der Laan, Hans
  • Steeghs, Marco, Matheus, Louis
  • Hageman, Joost, Cyrillus, Lambert
  • De Winter, Laurentius, Cornelius
  • Imponente, Giovanni
  • Frisco, Pierluigi
  • Van Setten, Eelco
  • Biller, Jan
  • De Jong, Edwin
  • Van Den Broeke, Jette, Janine
  • Scholz, Christian, Oliver
  • Van Leuken, Dirk, Petrus, Josephus
  • Rio, David, Marie
  • Brunner, Timothy, Allan
  • Mitrias, Christos
  • Rusu, Paul, Constantin

Abstract

There is provided a method of configuring a lithographic apparatus comprising illuminator optics for directing at least a portion of a radiation beam to an illumination region of a patterning device so as to impart a pattern to the radiation beam and form a patterned radiation beam, the method comprising: configuring the illuminator optics such that at least two different portions of the patterning device, differing at least in position along a scanning direction of said illumination region, receive radiation from different regions of the illuminator optics within a pupil plane associated with the illuminator optics.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G02B 5/09 - Multifaceted or polygonal mirrors
  • G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light

33.

ELECTRON ENERGY FLUCTUATION STABILIZING AND COMPENSATING METHODS AND TECHNIQUES FOR ELECTRON-BEAM SYSTEMS

      
Application Number EP2025050052
Publication Number 2025/146461
Status In Force
Filing Date 2025-01-02
Publication Date 2025-07-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Luo, Ying
  • Liu, Zuliang
  • Sharma, Vineet
  • He, Xiaodong
  • Lu, He Sheng
  • Shankar, Siddharth
  • Wu, Jianxin
  • Zhang, Zhiming
  • Li, Weisong
  • Zhu, Dawei
  • Sun, Xiong Fei

Abstract

A method of particle beam parameter variation compensation for image inspection and enhancement are disclosed. Embodiments of the disclosure may provide a charged-particle beam parameter variation compensation method to correct electron source and electron beamlet fluctuations. Some embodiments of the disclosure may provide a method of monitoring an electrical signal of an electron source in real-time for fluctuations outside a threshold value and applying an adjustment signal to a component of a charged-particle beam apparatus based on the monitored electrical signal. The fluctuations of an electron beamlet may result from fluctuations of the electron source. This real-time fluctuation data may be used to adjust an image to remove unwanted noise and enable improved inspection accuracy and associated improved accuracy of metrology measurements.

IPC Classes  ?

  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • H01J 37/248 - Components associated with high voltage supply

34.

METHOD FOR DETERMINING A MEASUREMENT RECIPE AND ASSOCIATED APPARATUSES

      
Application Number 18681890
Status Pending
Filing Date 2022-07-28
First Publication Date 2025-07-10
Owner ASMLNETHERLANDS B.V. (Netherlands)
Inventor
  • Van Dongen, Jeroen
  • Tsiatmas, Anagnostis
  • Verma, Alok
  • Meijden, Vidar Van Der
  • Mc Namara, Elliott Gerard

Abstract

A method for determining a measurement recipe for measuring a parameter of interest from a compound structure on a substrate. The method includes obtaining first training data relating to measurements of reference targets, the targets including: parameter of interest targets, each parameter of interest target having an induced set value which is varied over the parameter of interest targets; and one or more isolated feature targets, each including repetitions of one or more features. Second training data is obtained, the second training data including compound structure measurement signals obtained from measurement of one or more instances of the compound structure. One or more machine learning models are trained using the first training data and second training data to infer a value for the parameter of interest from a measurement signal related to the compound structure corrected for a feature asymmetry contribution.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

35.

APPARATUS AND METHOD FOR A LITHOGRAPHIC APPARATUS

      
Application Number 18703434
Status Pending
Filing Date 2022-11-03
First Publication Date 2025-07-10
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Nikipelov, Andrey
  • Van Der Woord, Ties Wouter
  • Vermeulen, Paul Alexander
  • Houweling, Zomer Silvester

Abstract

An apparatus for adjusting the transmissivity of a pellicle membrane, the apparatus including an etching unit configured to etch material from the pellicle membrane, and a controller configured to control the etching unit to etch the pellicle membrane based on a predicted and/or observed wear pattern of the pellicle membrane. Also a method of adjusting the transmissivity of a pellicle membrane as well as a pellicle membrane, a pellicle assembly, and the use of the same.

IPC Classes  ?

  • G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • H01J 37/302 - Controlling tubes by external information, e.g. programme control
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

36.

SYSTEM AND METHOD FOR OVERLAY METROLOGY WITH REDUCED COHERENCE AND SPECKLE CONTRAST

      
Application Number EP2024084747
Publication Number 2025/140832
Status In Force
Filing Date 2024-12-04
Publication Date 2025-07-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ajgaonkar, Mahesh, Upendra
  • Kuzucu, Oktay, Onur
  • Baselmans, Johannes, Jacobus, Matheus
  • Sokolov, Sergei
  • Abdolvand, Amir

Abstract

An infinite impulse response optical filter includes at least one N x N multimode optical coupler and one or more mode-scrambling loops. The at least one N x N multimode optical coupler has N input ports and N output ports. One of the N input ports is coupled to a laser source that generates a light beam. The at least one N x N multimode optical coupler splits the light beam into a plurality of sub-beams divided in an amplitude domain across the N output ports. One of the N output ports is coupled to a detection system. The one or more mode-scrambling loops includes a mode scrambler and couples one of the N output ports to one of the N input ports. The one or more mode-scrambling loops produce a temporal incoherence and a spatial incoherence that reduce a peak power and a speckle contrast of the light beam.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G02B 27/48 - Laser speckle optics
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

37.

INTERNAL LIGHT SOURCE, LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, AND METHOD THEREOF

      
Application Number EP2024084748
Publication Number 2025/140833
Status In Force
Filing Date 2024-12-04
Publication Date 2025-07-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Pawlowski, Michal, Emanuel
  • Huang, Chien, Jung
  • Raub, Akram
  • Raub, Alexander, Kenneth
  • Zimmerman, Richard, Carl

Abstract

A system includes an optical system, a reflective system, and a detection system. The optical system includes a lens element. The optical system generates a beam of radiation and directs the beam of radiation towards the reflective system. The reflective system directs the beam of radiation towards the lens element. The detection system receives scattered light from the lens element and directs the scattered light to an imaging sensor.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01N 21/94 - Investigating contamination, e.g. dust

38.

METHOD OF WAFER GROUNDING UTILIZING WAFER EDGE BACKSIDE COATING EXCLUSION AREA

      
Application Number 18850497
Status Pending
Filing Date 2023-03-16
First Publication Date 2025-07-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Li, Yinglong
  • Bosch, Niels Johannes, Maria
  • Goossens, Jef
  • Wu, Aimin
  • Asghar, Humad
  • Chen, Tianming
  • Hempenius, Peter Paul
  • Ke, Xiang
  • Sans Mercader, Joan
  • Zhang, Zhi
  • Van Der Toorn, Jan-Gerard Cornelis

Abstract

Systems and methods are provided for grounding a wafer in a charged particle beam apparatus. The systems and methods include providing an exclusion area in a backside film on the wafer of sufficient size to allow an electrical connection between the wafer and an electrical contact of the charged particle beam apparatus. The systems and methods include contacting a pin body to a surface of the wafer, the wafer having a coating on the surface, and the pin body comprising a first tip and a second tip each extending from the pin body; wherein the contacting takes place at a first exclusion area of the coating by any one of the first tip, the second tip, or any combination thereof.

IPC Classes  ?

  • H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

39.

METHODS RELATED TO AN AUTOENCODER MODEL OR SIMILAR FOR MANUFACTURING PROCESS PARAMETER ESTIMATION

      
Application Number 18851375
Status Pending
Filing Date 2023-03-02
First Publication Date 2025-07-03
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Onose, Alexandru
  • Verheul, Nick
  • Tiemersma, Bart Jacobus Martinus
  • Cerfontaine, Pascal
  • Barbieri, Davide

Abstract

A method for ordering and/or selection of latent elements for modeling low dimensional data within a latent space representation, the low dimensional data being a reduced dimensionality representation of input data as determined by a first model component of a model, comprising the steps of training said model and selecting one of said latent element selections based on said training, said training comprising: reducing a dimensionality of the input data to generate said low dimensional data in said latent space representation; training a second model component of said model for each of one or more latent element selections; and optimizing an approximation of the input data as output by said second model component for each said latent element selection, thereby ranking at least one of said plurality of latent elements in the latent space representation based on a contribution of each latent element to the input data.

IPC Classes  ?

  • G06N 3/082 - Learning methods modifying the architecture, e.g. adding, deleting or silencing nodes or connections
  • G06F 17/11 - Complex mathematical operations for solving equations
  • G06N 3/0455 - Auto-encoder networksEncoder-decoder networks

40.

SYSTEMS AND METHODS OF LASER-TO-DROPLET POSITIONING WITH TILT RANGE KEEP ASSIST DURING EXTREME ULTRAVIOLET RADIATION GENERATION

      
Application Number EP2024083028
Publication Number 2025/140805
Status In Force
Filing Date 2024-11-20
Publication Date 2025-07-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Aparicio Vilanova, Jose, Manuel
  • Noordman, Oscar, Franciscus, Jozephus
  • Houtzager, Ivo
  • Mcgrogan, Sean W.
  • Nikolaev, Ivan
  • Ridinger, Armin, Bernhard
  • Matthes, Liane, Manuela

Abstract

An extreme ultraviolet light source includes a laser, a target and a controller. The target may be a fuel droplet. The controller may determine optimal laser-to-droplet alignment positions in two orthogonal directions and update the position of the laser to maintain optimal alignment between the laser and fuel droplet during radiation generation. A method of determining an optimal laser-to-droplet alignment position includes fitting a polynomial to a radiation generation metric that varies based on the laser-to- droplet alignment position, and determining an optimal alignment position for the laser relative to the fuel droplet based on an apex of the polynomial fit; or evaluating commanded laser energy versus laser- to-droplet alignment position across an available alignment space to determine where commanded laser energy is maximum, and determining an optimal alignment position for the laser relative to the fuel droplet so that the alignment space is symmetric between the maximum points.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

41.

EXTREME ULTRAVIOLET LIGHT GENERATION SEQUENCE FOR AN EXTREME ULTRAVIOLET LIGHT SOURCE

      
Application Number EP2024083488
Publication Number 2025/140811
Status In Force
Filing Date 2024-11-25
Publication Date 2025-07-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Piovan, Giulia
  • Chang, Steven
  • Rafac, Robert, Jay
  • Hall, Daniel, Leslie
  • Wang, Haining
  • Ghetmiri, Damon, Erfan
  • Hahn, Eric, Nicholas
  • Purvis, Michael, Anthony
  • Brown, Daniel, John, William

Abstract

A method for selecting operating parameters of an EUV light source includes selecting a temporal or spatial relationship between a plurality of illuminations of a target by first, second, and third laser beams. The method further includes setting an initial value of a temporal delay between the second laser beam and the third laser beam. The method further includes setting an initial value of an energy of the second laser beam. The method further includes measuring an EUV energy generated by the illuminations of the target based on the initial value of the temporal delay between the second laser beam and the third laser beam and the initial value of the energy of the second laser beam. The method further includes adjusting the temporal delay between the second laser beam and the third laser beam and the energy of the second laser beam in response to the measuring.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

42.

METHOD AND SYSTEM FOR MULTI CHANNEL MASK PREDICTION

      
Application Number EP2024083855
Publication Number 2025/140817
Status In Force
Filing Date 2024-11-28
Publication Date 2025-07-03
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Onose, Alexandru
  • Hamouda, Ayman
  • Ruiz, Hans-Christian
  • Boone, Robert, Elliott

Abstract

A method and system for generating a mask pattern as multiple channels of information in which different types of features are generated in different channels of information. A target pattern is input to a machine learning (ML) model, and the ML model is executed to generate an output having multiple channels of information associated with a mask pattern corresponding to the target pattern. The multiple channels include: (a) a first channel that is configured to generate first mask information corresponding to main features to be printed on a substrate, and (b) a second channel that is configured to generate second mask information corresponding to sub-resolution assist features (SRAFs). The ML model may be trained by using a cost function configured to penalize a violation of a specified distance to be maintained between a predicted main feature and a predicted SRAF.

IPC Classes  ?

  • G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G06N 3/02 - Neural networks

43.

ILLUMINATION MODULE AND ASSOCIATED METHODS AND METROLOGY APPARATUS

      
Application Number 18952550
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-06-26
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Warnaar, Patrick
  • Yoon, Changsik
  • Zhou, Zili

Abstract

Disclosed is an illumination module for a metrology device. The illumination module comprises a configurable illumination module operable to provide measurement illumination over a configurable range of illumination angles, a grating light valve module for controllably configuring a spectral configuration of the measurement illumination; and a controller operable to control the configurable illumination module and the grating light valve module such that the spectral configuration of the measurement illumination is varied in dependence with illumination angle within the range of illumination angles so as to obtain a desired detection condition for detection of diffracted radiation from a diffractive structure resultant from a measurement of the diffractive structure using the measurement illumination.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes

44.

APPARATUS AND PROCESS FOR REDUCED DEPOSITION IN LIGHT SOURCE

      
Application Number EP2024081782
Publication Number 2025/131421
Status In Force
Filing Date 2024-11-08
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Frenzel, Alex, James
  • Braaksma, Niels
  • Stewart Iv, John, Tom
  • Mandrusiak, Gary, Dwayne

Abstract

A process for generating EUV radiation in an EUV light source includes: during a first period, mis- timing of light pulses in the EUV light source relative to a target material, resulting in a target material hit rate of zero during the first period and no production of EUV light; and, during a transition period following the first period, ramping up the target hit rate in the EUV light source.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

45.

METHOD AND APPARATUS FOR ASSESSING A SAMPLE SURFACE, METHOD OF SCANNING A SAMPLE SURFACE, AND CHARGED PARTICLE ASSESSMENT APPARATUS

      
Application Number EP2024082359
Publication Number 2025/131457
Status In Force
Filing Date 2024-11-14
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Maassen, Martinus, Gerardus, Johannes, Maria

Abstract

The present disclosure provides methods and apparatus relating to assessing a sample surface using charged particles. In one arrangement, a method comprises, at a first region of a sample surface on which is an intended pattern, relative scanning a beam over an elongate row portion of the intended pattern along a first direction to generate a row data set. At a second region of the sample surface on which is a repeat of the intended pattern, the beam is relative scanned over an elongate column portion of the intended pattern along a second direction to generate a column data set. The row data set and the column data set are processed to compare between the row data set and the column data set a common portion of the intended pattern to assess the common portion.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

46.

CHARGING PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE-OPTICAL MODULE, METHOD OF PROJECTING A PLURALITY OF CHARGED PARTICLE BEAMS TOWARDS A SAMPLE

      
Application Number EP2024082437
Publication Number 2025/131468
Status In Force
Filing Date 2024-11-14
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Wieland, Marco, Jan-Jaco

Abstract

The disclosure relates to apparatus and methods for projecting a plurality of charged particle beams towards a sample, and particularly for projecting the beams with reduced aberrations. In one arrangement, a charged particle-optical device comprises a lens array configured to focus a plurality of beams in a beam grid towards a sample position. A corrector comprises at least two aperture arrays having aperture patterns, including one or more pairs of facing aperture surfaces. Each pair corresponds to a species of correction for a respective aberration of the beam grid. A voltage supply is configured to apply a potential difference between the or each pair of facing aperture surfaces to cause the respective species of correction to be applied, the applied potential difference selectable to define a magnitude of the respective species of correction substantially independently of focusing of the beam grid at a sample position.

IPC Classes  ?

  • H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

47.

ACTUATOR USING PHASE-CHANGE MATERIAL

      
Application Number EP2024082633
Publication Number 2025/131475
Status In Force
Filing Date 2024-11-18
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Gils, Rob, Wilhelmus
  • Van De Moesdijk, Remco, Yuri
  • Rovers, Johannes, Marinus, Maria
  • An, Jerry
  • Sarawgi, Saket
  • Liu, Kaituo

Abstract

An actuator for positioning a motion stage, the actuator comprising a coil and a temperature regulating unit for transferring heat to and from the coil, wherein the temperature regulating unit comprising: a thermal conducting cooling plate provided with a cooling fluid channel; a potting layer surrounding the coil for transferring actuation force, transferring dissipated heat from the coil to the cooling plate and electrically insulating the coil; and a phase-change material arranged proximate to the coil for buffering heat.

IPC Classes  ?

  • H02K 9/19 - Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • H02K 9/22 - Arrangements for cooling or ventilating by solid heat conducting material embedded in, or arranged in contact with, the stator or rotor, e.g. heat bridges
  • H02K 41/03 - Synchronous motorsMotors moving step by stepReluctance motors
  • H02K 3/24 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors with channels or ducts for cooling medium between the conductors

48.

METHOD OF LITHOGRAPHY AND ASSOCIATED APPARATUS

      
Application Number EP2024082757
Publication Number 2025/131485
Status In Force
Filing Date 2024-11-18
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Greijdanus, Erik, Martijn
  • Hofmans, Gerardus, Carolus, Johannus
  • Li, Jianfeng

Abstract

Disclosed is a method for exposing structures onto a plurality of substrates using at least one lithographic apparatus. The method comprises: measuring each substrate of the plurality of substrate in accordance with a set of measurement timings for measurement actions comprised in measuring each substrate; and performing a plurality of exposures on each of said substrates; wherein variation 5 in said set of measurement timings is reduced and/or minimized per substrate of said plurality of substrates.

IPC Classes  ?

49.

SYSTEM AND METHODS FOR OFFLINE CALIBRATION OF RETICLE, OPTICAL ELEMENT AND SUBSTRATE THERMAL HEATING MODELS

      
Application Number EP2024082881
Publication Number 2025/131506
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Subramanian, Raaja Ganapathy
  • Moest, Bearrach
  • Paarhuis, Bart, Dinand

Abstract

A lithography system includes a reticle, an optical element, a substrate, a database, and a predictor. The database includes a plurality of heating models for the reticle, optical element, and/or substrate, which are generated offline using a combination of simulated and measured data. The predictor utilizes a heating model in the plurality of heating models to predict reticle, optical element, and/or substrate temperature and deformations before wafer production begins.

IPC Classes  ?

50.

METHOD AND APPARATUS FOR POWER SUPPLY SYNCHRONIZATION

      
Application Number EP2024082898
Publication Number 2025/131510
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Das, Palash, Parijat
  • Riggs, Daniel, Jason
  • Mathew, John Philip
  • Schafgans, Alexander, Anthony

Abstract

A method is disclosed for controlling power supplied to an EUV light source that includes receiving, by a controller, a trigger signal configured to initiate a plurality of pulses from a light source, and synchronizing, by the controller, a power control signal with the trigger signal. The power control signal is configured to control a supply of power to one or more light amplifiers. A controller for a light source and a light source are also disclosed.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

51.

METROLOGY METHOD FOR A DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED COMPUTER PROGRAM

      
Application Number EP2024083057
Publication Number 2025/131523
Status In Force
Filing Date 2024-11-21
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Feil, Marvin, Gerold
  • Van Schaijk, Theodorus, Thomas, Marinus
  • Buijs, Robin, Daniel

Abstract

A method of monitoring a path-length difference (PLD) between a scattered beam and a reference beam in a digital holographic microscope comprising obtaining at least one hologram image associated with at least a wavelength of the illumination radiation and identifying a point of coincidence for the at least one hologram image, the point of coincidence being a point in the at least one hologram image for which the PLD between the reference beam and the scattered beam of each of said beam pairs is zero.

IPC Classes  ?

  • G03H 1/04 - Processes or apparatus for producing holograms
  • G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
  • G03H 1/26 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique

52.

METHOD OF FORMING A PATTERNED LAYER OF MATERIAL, METHOD OF FORMING AN ELECTRONIC DEVICE, APPARATUS FOR FORMING A PATTERNED LAYER OF MATERIAL

      
Application Number EP2024083103
Publication Number 2025/131527
Status In Force
Filing Date 2024-11-21
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Venugopalan, Syam, Parayil
  • Faramarzi, Vina
  • Gaury, Benoit, Herve

Abstract

The disclosure relates to methods and apparatus for forming a patterned layer of material. In one arrangement, the method comprises providing a substrate having a deposited layer of diamondoids on at least a portion of the substrate. A selected portion of a surface of the substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion and thereby form a patterned layer of material in a pattern defined by the selected portion.

IPC Classes  ?

  • C23C 16/02 - Pretreatment of the material to be coated
  • C23C 16/04 - Coating on selected surface areas, e.g. using masks
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
  • C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

53.

SENSOR AND METHOD FOR QUALIFICATION OF A TOPOGRAPHY OF A SURFACE OF A DIE FOR DIE BONDING

      
Application Number EP2024083252
Publication Number 2025/131543
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Jager, Pieter, Willem, Herman
  • Schouten, Christine, Henriette
  • Dolk, Victor, Sebastiaan
  • Wahbeh, Lotfi
  • Assendelft, Joep
  • Bustraan, Krijn, Frederik
  • Sahin, Buket
  • Alleleijn, Joep, Hanni, Hub, Maria
  • Broers, Sander, Christiaan
  • Venugopalan, Syam, Parayil

Abstract

A system for die bonding comprising a sensor configured to determine a characteristic of a topography of a surface of one or more semiconductor dies, the sensor comprising: a radiation emission system configured to emit radiation having a substantially flat wavefront; and a radiation detector configured to detect at least some of the radiation after reflection by the one or more semiconductor dies to determine the characteristic of one or more semiconductor dies, wherein the system is configured to, based on output of the sensor, either: 1) accept and/or reject a semiconductor die for die bonding, or 2) reposition a semiconductor die and/or output the semiconductor die for cleaning prior to bonding.

IPC Classes  ?

  • G11C 29/00 - Checking stores for correct operationTesting stores during standby or offline operation
  • G11C 29/56 - External testing equipment for static stores, e.g. automatic test equipment [ATE]Interfaces therefor
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 23/00 - Details of semiconductor or other solid state devices
  • G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
  • G11C 29/04 - Detection or location of defective memory elements

54.

SYSTEM AND METHOD FOR STRESS RELEASE IN DIE BONDING

      
Application Number EP2024083255
Publication Number 2025/131544
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Den Brink, Marinus, Aart
  • Beukman, Arjan, Johannes, Anton
  • Sokolov, Sergei

Abstract

A system comprising: a targeted emission system configured to induce stress features in a semiconductor die; and a processor system configured to: obtain a pattern of stress features, the pattern of stress features configured to alter a distortion of the semiconductor die; and cause the targeted emission system to generate stress features in the semiconductor die based on the pattern of stress features, wherein the targeted emission system comprises a femtosecond laser system, wherein the semiconductor die is a semiconductor die bonded to a further semiconductor die and wherein the distortion is caused, at least in part, by stress induced by the bonding.

IPC Classes  ?

  • H01L 21/66 - Testing or measuring during manufacture or treatment
  • H01L 23/00 - Details of semiconductor or other solid state devices
  • B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
  • G11C 29/00 - Checking stores for correct operationTesting stores during standby or offline operation
  • G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
  • G11C 29/06 - Acceleration testing
  • G11C 29/56 - External testing equipment for static stores, e.g. automatic test equipment [ATE]Interfaces therefor
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
  • H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
  • H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

55.

APPARATUS AND METHOD FOR MULTI-STAGE DIE BONDING

      
Application Number EP2024083262
Publication Number 2025/131545
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Jager, Pieter, Willem, Herman
  • Schouten, Christine, Henriette
  • Dolk, Victor, Sebastiaan
  • Wahbeh, Lotfi
  • Assendelft, Joep
  • Bustraan, Krijn, Frederik
  • Sahin, Buket
  • Alleleijn, Joep, Hanni, Hub, Maria
  • Broers, Sander, Christiaan
  • Venugopalan, Syam, Parayil

Abstract

An apparatus and method of operating said apparatus, the apparatus comprising at least a first stage configured to support one or more donor dies and a second stage configured to support one or more target dies, the apparatus configured to measure a position of the one or more donor dies and configured to measure a position of the one or more target dies and to provide relative movement between at least one of the one or more donor dies and a corresponding one of the one or more target dies for die bonding by movement of the first stage and/or the second stage.

IPC Classes  ?

  • G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
  • H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
  • H01L 23/00 - Details of semiconductor or other solid state devices

56.

CONTROL OF LASER OF EUV SOURCE OF A LITHOGRAPHIC APPARATUS

      
Application Number EP2024083364
Publication Number 2025/131549
Status In Force
Filing Date 2024-11-23
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Warnaar, Bastiaan
  • Boerman, Willem

Abstract

Disclosed herein is a lithographic apparatus comprising: an EUV source that comprises a laser; and a control system; wherein: the control system is configured to obtain timing data of intended exposure processes; and the control system is configured to determine, in dependence on at least the timing data, control data for changing the instantaneous output power of the laser such that, during the intended exposure processes, an average output power of the laser is substantially maintained at a constant level, or changes at, or slower than, a pre-determined rate.

IPC Classes  ?

57.

HIGH-VOLTAGE DISCHARGE DETECTION IN A CHARGED PARTICLE SYSTEM

      
Application Number EP2024084863
Publication Number 2025/131747
Status In Force
Filing Date 2024-12-05
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Langen, Johannes, Cornelis, Jacobus
  • Martinez Negrete Gasque, Diego

Abstract

An improved technology for detecting discharge events in charged particle systems is discloses. An electron-optical apparatus for projecting a charged particle beam towards a sample comprises a stage configured to support a sample, a vacuum chamber configured to maintain a vacuum, an electron-optical device configured to generate a charged particle beam and direct the charged particle beam towards the sample, and an optical detection system configured to detect electromagnetic radiation within the apparatus, the optical detection system comprising a sensor and an optical waveguide having a first end positioned so as to detect electromagnetic radiation within the apparatus.

IPC Classes  ?

  • H01J 37/244 - DetectorsAssociated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

58.

SYSTEM AND METHOD FOR DIE BONDING WITH RADIATION RELEASE

      
Application Number EP2024084913
Publication Number 2025/131758
Status In Force
Filing Date 2024-12-05
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • De Jager, Pieter, Willem, Herman
  • Derksen, Antonius, Theodorus, Anna, Maria
  • Ottens, Joost, Jeroen
  • Leenders, Martinus, Hendrikus, Antonius
  • Broers, Sander, Christiaan
  • Dolk, Victor, Sebastiaan
  • Singh, Shilpa

Abstract

A method comprising: providing a semiconductor die on a carrier structure proximate to an acceptor location, wherein there is provided a flexible interposer layer between the semiconductor die and the carrier structure holding the die; applying radiation to, or near, the semiconductor die to cause transfer of the semiconductor die toward the acceptor location, wherein the transferred semiconductor die is bonded to the acceptor location by intermolecular bonding, wherein the radiation causes the flexible interposer layer to bend prior to contact of the semiconductor die with the acceptor location; and heating the semiconductor die in contact with the acceptor location to cause or improve electrical contact between the semiconductor die and the acceptor location.

IPC Classes  ?

  • G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
  • H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
  • H01L 23/00 - Details of semiconductor or other solid state devices
  • H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
  • H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices

59.

METHOD OF PELLICLE DETECTION, AND COMPUTER PROGRAM FOR PELLICLE MONITORING

      
Application Number EP2024085116
Publication Number 2025/131791
Status In Force
Filing Date 2024-12-06
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Mulder, Tim
  • Carbone, Ludovico
  • Huang, Zhuangxiong
  • Jilisen, Reinier, Theodorus, Martinus
  • Gui, Li
  • Khorsand, Ali, Reza
  • Meijerink, Wouter, Rogier
  • Chong, Derick, Yun, Chek

Abstract

A method of pellicle monitoring using an alignment sensor of a lithographic apparatus, wherein: the alignment sensor is configured to sense alignment using a patterning device alignment mark and a stage alignment mark; and the pellicle intersects a light path between the alignment sensor and the patterning device; wherein the method comprises: using the alignment sensor, measuring a first detection intensity; using the alignment sensor, measuring a second detection intensity, being the intensity of light reflected from the patterning device; and comparing the first and second detection intensities.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

60.

READOUT CIRCUIT DESIGN FOR CHARGED PARTICLE DETECTION APPLICATIONS

      
Application Number EP2024085372
Publication Number 2025/131845
Status In Force
Filing Date 2024-12-09
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Chen, Wei-Zen
  • Lee, Chia-Chen
  • Wang, Yongxin
  • Lai, Rui-Ling

Abstract

An electron counting detector includes a sensing element and a detection circuit configured to detect electron arrival events by comparing the relative frequencies or phases of two ring oscillators. A reference ring oscillator may be configured to output a reference signal to a comparator, and a detection ring oscillator may be configured to output a detection signal to the comparator. In the absence of an electron arrival event, the detection signal may remain correlated with the reference signal. When an electron arrives at the sensing element, charges form the sensing element are injected to an N-well of the detection ring oscillator, altering its oscillation frequency or phase. The altered frequency or phase of the detection oscillator with respect to the reference oscillator may be detected by the comparator as an electron arrival event.

IPC Classes  ?

  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

61.

LEED AND PTYCHOGRAPHY BASED SURFACE PROFILE DETERMINATION AND INSPECTION

      
Application Number EP2024085948
Publication Number 2025/131995
Status In Force
Filing Date 2024-12-12
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Coene, Willem, Marie, Julia, Marcel
  • Van Rens, Jasper, Frans, Mathijs
  • Krecinic, Faruk
  • Garming, Mathijs, Wouter, Henk
  • Kooiman, Marleen
  • Van Der Molen, Sense Jan

Abstract

In low-energy-electron diffraction (LEED), an electron diffraction pattern is detected, and an image may be formed, based on electrons reflected and diffracted from a sample surface. A diffraction pattern can be generated from the interaction of a relatively localized coherent electron beam incident on the sample surface (e.g., a selected area of the sample surface). Information from the diffraction pattern can be used to determine (or reconstruct) structures on the sample surface. Advantageously, selected area LEED (SA-LEED), or LEED in combination with ptychography (to generate a series of diffraction patterns which are each associated with a given particle beam position, where particle beams centered at neighboring positions are partially overlapping), may be used to determine semiconductor wafer surface structures through lensless imaging for defect inspection and/or other purposes.

IPC Classes  ?

  • G03F 7/20 - ExposureApparatus therefor
  • G01N 23/20058 - Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
  • H01J 37/29 - Reflection microscopes
  • H01J 37/295 - Electron- or ion-diffraction tubes

62.

THERMAL DEFORMATION COMPENSATION IN CHARGED-PARTICLE BEAM APPARATUS

      
Application Number EP2024086977
Publication Number 2025/132492
Status In Force
Filing Date 2024-12-17
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Casucci, Paul
  • Cao, Qian
  • Yu, Le
  • Xi, Qingpo

Abstract

A component for mounting a lens in a charged-particle beam apparatus has a coefficient of thermal expansion (CTE) and a shape configured to cause the component to deflect by a predictable amount in a Z direction when subject to a predetermined non-zero temperature change such that a working distance of the lens remains substantially unchanged over the predetermined non-zero temperature range.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes

63.

A METHOD FOR DETERMINING A VERTICAL POSITION OF A STRUCTURE ON A SUBSTRATE AND ASSOCIATED APPARATUSES

      
Application Number 18848085
Status Pending
Filing Date 2023-02-22
First Publication Date 2025-06-26
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Den Boef, Arie Jeffrey
  • Van Schaijk, Theodorus Thomas Marinus
  • Buijs, Robin Daniel
  • De Boer, Johannes Fitzgerald
  • Messinis, Christos

Abstract

A method for determining a vertical position of a structure on a substrate with respect to a nominal vertical position is disclosed. The method comprises obtaining complex field data relating to scattered radiation from said structure, for a plurality of different wavelengths, determining variation in a phase parameter with wavelength from said complex field data; and determining said vertical position with respect to a nominal vertical position from the determined variation in phase with wavelength.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01B 11/22 - Measuring arrangements characterised by the use of optical techniques for measuring depth

64.

ILLUMINATION ARRANGEMENT FOR A METROLOGY DEVICE AND ASSOCIATED METHOD

      
Application Number 18848095
Status Pending
Filing Date 2023-02-21
First Publication Date 2025-06-26
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Schaijk, Theodorus Thomas Marinus
  • Ajgaonkar, Mahesh Upendra
  • Den Boef, Arie Jeffrey
  • De Boer, Johannes Fitzgerald
  • Messinis, Christos
  • Buijs, Robin Daniel

Abstract

Disclosed is an illumination arrangement for providing at least one radiation beam for use as an illumination beam and/or reference beam in a metrology device. The illumination arrangement comprises at least one radiation beam modifier module operable to receive source illumination and output a modified radiation beam comprising a first beam component and a second beam component. Each radiation beam modifier module comprises at least one path length varying arrangement for controllably varying the optical path length of at least one of said first beam component and said second beam component, such that said first beam component and second beam component of said modified radiation beam comprise a respective different optical path length.

IPC Classes  ?

  • G01J 9/02 - Measuring optical phase differenceDetermining degree of coherenceMeasuring optical wavelength by interferometric methods
  • G02B 21/00 - Microscopes
  • G02B 21/16 - Microscopes adapted for ultraviolet illumination
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
  • G03H 1/04 - Processes or apparatus for producing holograms
  • G03H 1/06 - Processes or apparatus for producing holograms using incoherent light
  • G03H 1/26 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique

65.

SYSTEMS AND METHODS FOR VOLTAGE CONTRAST DEFECT DETECTION

      
Application Number 18973985
Status Pending
Filing Date 2024-12-09
First Publication Date 2025-06-26
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Liu, Xuedong
  • Chen, Zhong-Wei
  • Ji, Xiaoyu
  • Chen, Xiaoxue
  • Zhou, Weimin
  • Zhang, Frank Nan

Abstract

Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.

IPC Classes  ?

  • G01N 23/2202 - Preparing specimens therefor
  • G01N 1/44 - Sample treatment involving radiation, e.g. heat
  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
  • H01J 37/244 - DetectorsAssociated components or circuits therefor
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

66.

CHARGED PARTICLE-OPTICAL APPARATUS AND METHOD OF PROCESSING A SAMPLE

      
Application Number EP2024082163
Publication Number 2025/131442
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Wieland, Marco, Jan-Jaco
  • Maassen, Martinus, Gerardus, Johannes, Maria
  • Slot, Erwin
  • Tsiatmas, Anagnostis

Abstract

A charged particle-optical apparatus comprises: a charged particle-optical device configured to direct a beam grid of beams of charged particles toward a region of a sample surface of a sample; a sample support configured to support the sample; and a controller configured to control the charged particle-optical apparatus to selectively apply one of a plurality of predetermined beam area patterns so as to process portions of respective beam areas of the region with respective beams in accordance with the applied beam area pattern; wherein the beam area patterns are associated with respective proportions of the beam areas being processed, and at least one of the beam area patterns comprises at least one elongate strip.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

67.

A COLOR SELECTION MODULE FOR FILTERING A SELECTABLE WAVELENGTH BAND

      
Application Number EP2024082240
Publication Number 2025/131447
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Greevenbroek, Hendrikus, Robertus, Marie
  • Kuzucu, Oktay, Onur
  • Zhou, Zili
  • Hinterding, Stijn Oskar Matisse
  • Warnaar, Patrick
  • Hesp, Niels, Caspar, Herman

Abstract

This application provides a color selection module, and a method, for filtering a selectable wavelength band. The color selection module comprises a light input; a light output; a filter; an actuatable mirror, and a return mirror. The light input receives an input light beam. The actuatable mirror receives the input light beam and reflects the input light beam towards a selectable position on the filter. The actuatable mirror is configured for selecting the position by actuation. The filter receives the reflected input light beam from the actuatable mirror on the selectable position and filters the selectable wavelength band from the reflected input light beam. The return mirror reflects the filtered wavelength band towards the actuatable mirror, and the actuatable mirror reflects the filtered selectable wavelength band towards the light output. The light output outputs light of the selectable wavelength band.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

68.

MODULE AND CHARGED PARTICLE-OPTICAL DEVICE

      
Application Number EP2024082324
Publication Number 2025/131453
Status In Force
Filing Date 2024-11-14
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Peijster, Jerry, Johannes, Martinus
  • Kuiper, Vincent, Sylvester
  • Ma, Yue

Abstract

The present disclosure relates to a module for a charged particle-optical device configured to direct one or more primary beams of charged particles toward a sample location along a beam path, the module comprising: a wall for a vacuum chamber; and an actuatable charged particle-optical element configured to operate on charged particles directed along the beam path towards the sample location; wherein the actuatable charged particle-optical element is configured to be located outside the wall for the vacuum chamber and to be actuatable relative to the beam path in a direction across the primary beam and/or about an axis across the primary beam.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
  • H01J 37/14 - Lenses magnetic
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

69.

NON-CENTROSYMMETRIC FRINGE-BASED METROLOGY TARGETS AND METHODS

      
Application Number EP2024082387
Publication Number 2025/131461
Status In Force
Filing Date 2024-11-14
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Naghibzadeh, Shahrzad
  • Zwier, Olger, Victor

Abstract

There is provided a method of metrology comprising: obtaining calibration data from at least one first target comprising at least a first cluster of sub-targets and a second cluster of sub-targets, wherein said calibration data comprises a set of measurements of said at least one first target in a first orientation and a set of measurements of said at least one first target in a second orientation; and calibrating a model based on said calibration data such that the calibrated model is operable to: predict, from measurement data of at least one second target comprising at least a first cluster of sub-targets, predicted measurement data as would be obtained from a second cluster of sub-targets; or relate measurement data of at least one second target comprising at least a first cluster of sub-targets to corrected measurement data of the at least one second target.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

70.

METHOD OF MONITORING PROCESS DRIFT IN A SEMICONDUCTOR MANUFACTURING PROCESS

      
Application Number EP2024082765
Publication Number 2025/131486
Status In Force
Filing Date 2024-11-18
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Schenkelaars, Thijs

Abstract

Described is a method of measuring at least one exposure offset error relating to a lithographic apparatus. The method comprises obtaining a substrate comprising a coating of a latent resist; performing at least a main exposure step to expose metrology structures into said latent resist; measuring at least said metrology structures in the undeveloped latent resist to obtain metrology data; and determining said exposure offset error from said metrology data. The measuring step is performed subsequently to said main exposure step without removing said substrate from the lithographic apparatus.

IPC Classes  ?

  • G03F 7/20 - ExposureApparatus therefor
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

71.

MULTI-BEAM CHARGED-PARTICLE APPARATUS FOR UNIFORM PROBE CURRENT

      
Application Number EP2024082897
Publication Number 2025/131509
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Xi, Qingpo
  • Gong, Zizhou

Abstract

A charged-particle beam apparatus comprises a first aperture array including a plurality of elongated apertures configured to generate a plurality of primary beamlets from a primary charged- particle beam and project the plurality of primary beamlets on a second aperture array. The second aperture array may include a plurality of apertures configured to generate a plurality of probing beams from the plurality of primary beamlets. A first aperture located at a corner of the plurality of elongated apertures of the first aperture array may be vertically aligned with a second aperture located at a corner of the plurality of apertures of the second aperture array, and a size of the first aperture in a first direction may be smaller than the size of the second aperture in the first direction.

IPC Classes  ?

  • H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
  • H01J 37/12 - Lenses electrostatic

72.

CONTOUR-BASED FRAMEWORK FOR MONITORING AND EVALUATING PROCESS QUALITY AND VARIATION

      
Application Number EP2024083108
Publication Number 2025/131528
Status In Force
Filing Date 2024-11-21
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Du, Zijian
  • Pu, Lingling
  • Wang, Bo
  • Yuan, Rui
  • Bu, Yizhe

Abstract

A method of monitoring and evaluating a wafer fabrication process variation using a characteristic of extracted two-dimensional measurement data of a fabricated feature on a wafer is disclosed. Two-dimensional measurement data may be determined without using a physical measurement or a mathematical model and does not rely on any prior assumption on how a process variation should behave. A wafer map may be generated to identify a spatial distribution of an impact of fabrication process variation on a fabricated feature. The extracted two-dimensional measurement of fabricated features may be combined and engineered to obtain more insight of the fabrication process and lead to the possibility of classification based on contour quality, modeling of process windows, and other wafer fabrication modeling applications.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

73.

CONVERSION LAYERS TO BLOCK OUTGASSING IN HYDROGEN PLASMA

      
Application Number EP2024083501
Publication Number 2025/131569
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Navarro Paredes, Violeta
  • Hultermans, Ronald, Johannes
  • Simionesie, Dorin
  • Van De Kerkhof, Marcus, Adrianus

Abstract

A component for EUV lithographic apparatus comprises: a) a component core made of a material comprising i) at least a first metal Me or a Me-alloy core and ii) a contaminant X which is susceptible to form volatile compounds that outgas within an EUV lithographic apparatus environment, and b) a capping layer provided on the top of the core and forming an outer surface arranged to be in contact with the environment within the lithographic apparatus, wherein the capping layer comprises an oxide YO of a second metal Y, and wherein the second metal Y is selected such as at working temperature to chemically react with the X' contaminant atoms which diffuse from the core to the capping layer and towards the outer surface of the components, forming thereby an alloy X'Y within the capping layer such that substantially all the diffusing X' contaminant is bound in the capping layer.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

74.

SYSTEMS AND METHODS FOR SIGNAL-BASED DEFECT CLASSIFICATION IN TRANSIENT INSPECTION

      
Application Number EP2024083503
Publication Number 2025/131570
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Jen, Chih-Yu
  • Hsu, Shih-Hsin
  • Wang, Hong
  • Liu, Chieh-Hung

Abstract

Systems, methods, and non-transitory computer readable mediums for signal-based defect classification in transient inspection include obtaining a first image of a sample; locating a location of interest using the first image; obtaining a plurality of second images of the sample, wherein each second image of the plurality of second images corresponds to a different point in time of the location of interest; tracking variation of grey level (GLV) for the location of interest based on the plurality of second images; plotting a relationship between the GLV and a time at which the GLV was captured based on the plurality of second images; and determining, using the plotting, whether a defect has occurred at the location of interest.

IPC Classes  ?

75.

METROLOGY ACCURACY IMPROVEMENT USING REFERENCE GEOMETRIC PARAMETER

      
Application Number EP2024083504
Publication Number 2025/131571
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Mos, Everhardus, Cornelis
  • Kiers, Antoine, Gaston, Marie
  • Van Der Schaar, Maurits
  • Meessen, Hieronymus, Johannus, Christiaan

Abstract

Improved methods and apparatus for correcting measurements on an inspection image for a wafer inspection system are provided. An improved method comprises acquiring a first measurement for a first dimension and a second measurement for a second dimension on the inspection image; acquiring reference data associated with the first dimension and the second dimension; estimating a first measurement error for the first measurement and a second measurement error for the second measurement based on the reference data; and correcting the first measurement based on the estimated first measurement error and the second measurement based on the estimated second measurement error.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

76.

VACUUM EXPOSURE APPARATUS AND ASSESSMENT SYSTEM

      
Application Number EP2024083625
Publication Number 2025/131589
Status In Force
Filing Date 2024-11-26
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Der Toorn, Jan-Gerard, Cornelis
  • Cao, Mingwei
  • Slot, Erwin

Abstract

The present invention provides a vacuum exposure apparatus. The vacuum exposure apparatus comprises: a vacuum chamber; a stage disposed within the vacuum chamber and configured to support a sample; a high voltage power supply unit disposed within the vacuum chamber; a high voltage power source disposed exterior to the vacuum chamber; and exactly one high voltage cable extending between 5 the high voltage power supply unit to an exterior of the vacuum chamber. A first end of the high voltage cable is connected to the high voltage power supply unit. A second end of the high voltage cable is connected to the high voltage power source. The high voltage cable is configured to carry a higher voltage than is output by the high voltage power source.

IPC Classes  ?

  • H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
  • H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
  • H01J 5/50 - Means forming part of the tube or lamp for the purpose of providing electrical connection to it
  • H01J 37/18 - Vacuum locks

77.

CHARGED PARTICLE-OPTICAL MODULE, CHARGED PARTICLE-OPTICAL DEVICE, AND A METHOD OF USING A CHARGED-PARTICLE APPARATUS

      
Application Number EP2024083794
Publication Number 2025/131599
Status In Force
Filing Date 2024-11-27
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Mangnus, Albertus, Victor, Gerardus

Abstract

A charged particle-optical module for generating a plurality of sub-beams 211-213 from a source beam 202 of electrons, the module for use in an charged particle-optical device for projecting a plurality of sub-beams 211-213 toward a sample. The charged particle module comprises: an electron source 201 comprising an emitter 63 configured to emit a source beam 202 along a divergent path; a beam limiter 236 defining an array of apertures 232 and positioned in the divergent path to form a grid of sub-beams from the source beam; a condenser lens array 231 configured to operate on the sub-beams; and a macro-corrector system 60 configured to act on the sub-beams. The macro-corrector system is at least partly comprised between the beam limiter and the condenser lens array.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

78.

OPTICAL AMPLIFIER AND COMPONENTS THEREFOR

      
Application Number EP2024084163
Publication Number 2025/131627
Status In Force
Filing Date 2024-11-29
Publication Date 2025-06-26
Owner
  • ASML NETHERLANDS B.V. (Netherlands)
  • TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
Inventor
  • Dilissen, Ruben, Hendrik, C
  • Hettkamp, Philipp
  • Alvarez Alonso, Diego, Alejandro
  • Wiesweg, Florian

Abstract

An optical amplifier (200) comprising a flow passageway for a gas of the optical amplifier (200), a first swirl insert (150) in the flow passageway arranged to impart a desired swirling flow pattern to the gas, and a cyclonic particle trap (154) either or both around or downstream of the swirl insert (150) for collecting particle contamination from a radially outer portion of the swirling gas. The swirl insert comprises vanes (134) arranged to impart a cyclonic or helical flow to the gas, whereby particle contamination in the gas tends to move into or towards the radially outer portion of the swirling gas.

IPC Classes  ?

  • B01D 45/16 - Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by centrifugal forces generated by the winding course of the gas stream
  • H01S 3/02 - Constructional details

79.

HIGH PRESSURE AND DEEP VACUUM ELECTRICAL FEEDTHROUGH

      
Application Number EP2024084538
Publication Number 2025/131697
Status In Force
Filing Date 2024-12-03
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Vaschenko, Georgiy, Olegovich
  • Swerdlow, Ethan, Marcus
  • Hoeijmakers, Pieter, Gerardus, Mathijs
  • De Geus, Sjoerd
  • Van Den Berk, Antonius, Johannes, Gerardus, Maria
  • Swamy, Kshitiz, Pravin

Abstract

A detection system is configured for a target material reservoir. The detection system includes: a feedthrough housing associated with a wall of the target material reservoir, the feedthrough housing defining a seal surface; an electrically-conductive member extending through the feedthrough housing; and a compressible element that is electrically insulating. The electrically-conductive member is inside the compressible element. The compressible element contacts the feedthrough housing at the seal surface of the feedthrough housing. The interface between the feedthrough housing seal surface and a surface of the compressible element forms a hermetic seal when the compressible element is compressed.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

80.

LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD WITH PREVENTING CONTAMINANT PARTICLES FROM BEING DEPOSITED ON A SENSITIVE COMPONENT, SUCH AS A PATTERNING SURFACE OF A PATTERNING DEVICE

      
Application Number EP2024084722
Publication Number 2025/131731
Status In Force
Filing Date 2024-12-04
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ranjan, Manish
  • Kvon, Vladimir
  • Van De Kerkhof, Marcus, Adrianus
  • Mayer, Peter, Matthew

Abstract

Disclosed is a lithographic apparatus including: an illumination system for providing a beam of EUV radiation along a beam path; a holder for a patterning device configured to impart a pattern to the beam of radiation, the patterning device comprising a patterning surface with a pattern thereon; and an electron beam source configured to emit electrons toward the patterning surface and/or a part of the beam path adjacent the patterning surface.

IPC Classes  ?

81.

VESSEL CONFIGURED TO RECEIVE A RADIATION BEAM WITH AN INTERNAL STRUCTURE CONFIGURED TO BE COOLED FOR CONTAMINANT REMOVAL

      
Application Number EP2024085347
Publication Number 2025/131837
Status In Force
Filing Date 2024-12-09
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Reinink, Johan
  • De Vries, Gosse, Charles
  • Van Der Post, Sietse, Thijmen
  • Van De Kerkhof, Marcus, Adrianus
  • Puth, Alexander, Detlef, Franziskus
  • Tumer, Can
  • Storm, Arnoldus, Jan
  • Osorio Oliveros, Edgar, Alberto
  • Brussaard, Gerrit, Jacobus, Hendrik

Abstract

An assembly comprising a vessel configured to receive a radiation beam. The assembly comprises an internal structure forming part of the vessel or enclosed within the vessel, and a temperature control system configured to control a temperature of the internal structure to be in a range of 77 K to 140 K.

IPC Classes  ?

82.

CHARGED PARTICLE-OPTICAL ARRANGEMENT FOR A CHARGED PARTICLE BEAM APPARATUS

      
Application Number EP2024085731
Publication Number 2025/131937
Status In Force
Filing Date 2024-12-11
Publication Date 2025-06-26
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Toonen, Wiebe, Floris
  • Krecinic, Faruk
  • Scaccabarozzi, Luigi

Abstract

A charged particle-optical arrangement for a charged particle beam apparatus configured to operate on at least one beam of charged particles, the electron-optical arrangement comprising: a first plate which defines at least one first aperture for passage of the at least one beam therethrough; and a second plate which defines at least one second aperture for passage of the at least one beam therethrough; and an actuator arrangement configured to apply a force to the first plate.

IPC Classes  ?

83.

METHODS OF METROLOGY AND ASSOCIATED DEVICES

      
Application Number 18847453
Status Pending
Filing Date 2023-03-14
First Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Batistakis, Chrysostomos
  • Werkman, Roy
  • Pisarenco, Maxim
  • Venugopalan, Syam Parayil

Abstract

A method of inferring second metrology data relating to patterned substrate on which patterns have been exposed and on which processing has been performed, from first metrology data measured on the patterned substrate prior to performance of the processing. The method includes obtaining a model including a first model component. The first model component includes a machine learning model component having been trained to map the first metrology data to the second metrology data, the first model component further including a physics-based input channel for receiving physics-based input data. Second metrology data is inferred from the first metrology data using the first model component as biased by the physics-based input data on the physics-based input channel.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

84.

HOLISTIC CALIBRATION

      
Application Number EP2024082552
Publication Number 2025/124834
Status In Force
Filing Date 2024-11-15
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Lemmers, Dorus

Abstract

A method is provided for measuring a characteristic feature or property of a sub-target (e.g., a component of an integrated circuit, IC, fabricated using a lithography production process). The sub-target is located on a target, which includes one or more other sub-targets. The method involves arranging each of the sub-targets in a plurality of disjunct positions within an illumination spot of electromagnetic radiation and measuring the intensity of electromagnetic radiation diffracted from each of the sub-targets at those respective positions. Corrected intensities of electromagnetic radiation diffracted by the corresponding sub-target are determined.

IPC Classes  ?

85.

METHOD AND SYSTEM FOR PRIMITIVE-BASED MASK PREDICTION

      
Application Number EP2024082675
Publication Number 2025/124841
Status In Force
Filing Date 2024-11-18
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Onose, Alexandru
  • Ruiz, Hans-Christian
  • Botari, Tiago
  • Van Kraaij, Markus, Gerardus, Martinus, Maria
  • Boone, Robert, Elliott
  • Hamouda, Ayman

Abstract

Described herein is a method and system for generating a mask pattern. A set of primitive elements of a target pattern is identified. The set of primitive elements are encoded in a feature vector space to generate a set of encoded primitive elements and aggregated to generate an encoded aggregation that represents the target pattern. The encoded aggregation is input to a mask prediction model, which generates a mask image that is representative of a mask pattern for the target pattern.

IPC Classes  ?

  • G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

86.

DROPLET METROLOGY USING TUNABLE-WAVELENGTH LASER

      
Application Number EP2024083412
Publication Number 2025/124870
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Urone, Dustin, Michael
  • Yanez Pagans, Sergio, Alejandro
  • Mckenzie, Paul, Alexander

Abstract

Disclosed is an apparatus for and method of adjusting spectral properties of a laser curtain including a focal position of a laser curtain created by a tunable-wavelength laser with respect to a position of a mass of target material in which the wavelength of the laser radiation output by the tunable-wavelength laser is changed to cause a chromatic shift in the spectral property.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

87.

METHOD OF SCANNING A SAMPLE WITH NON-CIRCULAR BEAM SPOTS

      
Application Number EP2024084581
Publication Number 2025/125017
Status In Force
Filing Date 2024-12-03
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Zhou, Yongjian
  • Gong, Zizhou
  • Ji, Xiaoyu
  • Ren, Weiming

Abstract

Systems, methods, and non-transitory computer readable mediums for scanning a sample with non-circular beam spots may include generating an elongated electron beam; orientating the elongated electron beam such that a length of the elongated electron beam is parallel to an edge of a pattern on the sample; scanning the pattern with the elongated electron beam; detecting electrons emitted from the sample during the scanning; and determining a characteristic of the pattern based on the detected electrons.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement

88.

SUBSTRATE WARPAGE DETERMINATION SYSTEM

      
Application Number 18851601
Status Pending
Filing Date 2023-03-17
First Publication Date 2025-06-19
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Stratis, Efthymios
  • Galaktionov, Oleksiy Sergiyovich
  • Poiesz, Thomas
  • Malakhovsky, Ilya

Abstract

A substrate warpage determination system comprises at least three first supporting devices and at least three second supporting devices, forming first and second substrate support areas configured to carry a substrate, an actuator configured to move the at least three second supporting devices in a vertical direction, and a controller to drive the actuator. The controller is configured to determine a force exerted by the actuator, compare the determined force exerted by the actuator at the position in a vertical direction of the second substrate support area relative to the first substrate support area to a predetermined force at a predetermined position in the vertical direction of the second substrate support area relative to the first substrate support area, and determine a warpage of the substrate from the comparison.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

89.

METHOD AND SYSTEM FOR REDUCING CHARGING ARTIFACT IN INSPECTION IMAGE

      
Application Number 18867005
Status Pending
Filing Date 2023-05-08
First Publication Date 2025-06-19
Owner ASML Netherlands B.V. (Netherlands)
Inventor
  • Van Rens, Jasper Frans Mathijs
  • Smit, Gijs
  • Kiers, Antoine Gaston Marie
  • Menkovski, Vlado

Abstract

Systems and methods for reducing charging artifacts in an inspection image include obtaining a set of inspection images, in which each of the set of inspection images includes a charging artifact; and training a machine learning model using the set of inspection images as input, in which the machine learning model outputs a set of decoupled features of the set of inspection images.

IPC Classes  ?

  • G06T 5/60 - Image enhancement or restoration using machine learning, e.g. neural networks
  • G06T 7/00 - Image analysis
  • G06V 10/774 - Generating sets of training patternsBootstrap methods, e.g. bagging or boosting

90.

MEASURING CONTRAST AND CRITICAL DIMENSION USING AN ALIGNMENT SENSOR

      
Application Number 18876101
Status Pending
Filing Date 2023-08-15
First Publication Date 2025-06-19
Owner
  • ASML Netherlands B.V. (Netherlands)
  • IMEC v.z.w. (Belgium)
Inventor
  • Duriau, Edouard André Marie Louis
  • Tabery, Cyrus Emil
  • Brunner, Timothy Allan
  • Ausschnitt, Christopher P.
  • Truffert, Vincent Patrick Thomas

Abstract

A method can include directing radiation toward at least two targets using an optical scanning system so as to generate first and second portions of scattered radiation. A first target can include a plurality of first grating line structures including features having a first bias value. A second target can include a plurality of second grating line structures including features having a second bias value. The method can include detecting the first and second portions of scattered radiation, generating a first measurement signal indicative of a first target position based on the first bias features, and generating a second measurement signal indicative of a second target position based on the second bias features. The method can include analyzing an effect of the first and second bias values on the first and second positions to determine at least one property of the set of targets.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
  • G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

91.

DETECTION OF YIELD-CRITICAL DEFECTS USING THE MEDIAL AXIS OF 3D-STACKED CHARGED-PARTICLE BEAM INSPECTION IMAGES

      
Application Number EP2024082109
Publication Number 2025/124824
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Pisarenco, Maxim
  • Kustra, Jacek, Lukasz

Abstract

An apparatus for detecting defects in a sample includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: acquiring a plurality of images, wherein each image is a location to be examined; segmenting each of the plurality of images; stacking the plurality of segmented images into a three-dimensional (3D) volume; calculating a medial axis of the 3D volume; generating a medial axis skeleton of the 3D volume based on the calculated medial axis; and evaluating the medial axis skeleton to determine whether there are any detected defects in the sample.

IPC Classes  ?

92.

A DISTRIBUTED SYSTEM FOR WAFER PRINT CHECK

      
Application Number EP2024082529
Publication Number 2025/124833
Status In Force
Filing Date 2024-11-15
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor Wang, Fuming

Abstract

A method for performing a distributed wafer print check includes: inspecting a zone of a full field of a first wafer by a first inspection tool; determining defect locations in the zone of the first wafer by the first inspection tool; providing the defect locations of the zone of the first wafer to a second inspection tool; determining whether the defect locations of the zone of the first wafer repeat in a zone of a second wafer by the second inspection tool, wherein the zone of the first wafer is in a same location as the zone of the second wafer and the second inspection tool inspects the zone of the second wafer while the first inspection tool inspects another zone of the first wafer.

IPC Classes  ?

93.

METHODS AND SAMPLES TO DETERMINE CHARGED-PARTICLE BEAM SPOT SIZE

      
Application Number EP2024085573
Publication Number 2025/125271
Status In Force
Filing Date 2024-12-10
Publication Date 2025-06-19
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Ren, Weiming
  • Sun, Yan
  • Fu, Jiyou
  • Ji, Xiaoyu

Abstract

Samples and methods for determining a beam spot size include scanning a pattern on the sample with a charged-particle beam to generate an image. The pattern may include at least one inclined side edge and a top surface. The at least one inclined side edge may have an inclination angle that is controlled during manufacture of the sample to be between about 40-80 degrees. The beam spot size may be determined based on an imaging profile of the at least one inclined side edge derived based on the image.

IPC Classes  ?

  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

94.

FLUID HANDLING STRUCTURE

      
Application Number EP2024080801
Publication Number 2025/119553
Status In Force
Filing Date 2024-10-31
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Lau, Yuk Man
  • Arts, Petrus, Martinus, Gerardus, Johannes
  • Wismeijer, Dagmar, Antoinette
  • Bakker, Ruben, Hendrik, Christiaan
  • Oana, Lucian, Petru

Abstract

A fluid handling structure configured to at least partly confine an immersion liquid to an immersion space between a final element of a projection system and a substrate, comprising: a gas channel configured to supply a gas flow towards the substrate via a gas channel opening; and a chamber configured to define a control volume fluidically connected to the gas channel, the chamber being actuatable to vary a flow rate of the gas via the gas channel opening by varying a size of the control volume.

IPC Classes  ?

95.

METHOD OF SUBSTRATE SUPPORT REPAIR

      
Application Number EP2024081197
Publication Number 2025/119563
Status In Force
Filing Date 2024-11-05
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Blumberg, Christian
  • Kieven, David

Abstract

A method of joining a support member to a substrate support, the method comprising: inserting the support member into a recess in the substrate support with a bonding material between facing surfaces of the support member and the substrate support; and applying a bonding temperature and a bonding pressure to the bonding material, wherein the bonding material comprises a first material and a second material, wherein the first material comprises a powder of an oxalate, and the second material comprises nanoparticles.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

96.

METHOD AND SYSTEM FOR PERTURBING MASK PATTERN

      
Application Number EP2024082056
Publication Number 2025/119604
Status In Force
Filing Date 2024-11-12
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kaplan, Christopher, James
  • Kabiri Rahani, Ehsan

Abstract

Described herein is a method and system for optimizing a source of a lithographic apparatus using a perturbed mask pattern. A mask pattern corresponding to a target pattern is obtained, and a contour of the mask pattern is extracted. A set of points are assigned along a contour and a random displacement of the contour is determined at each point. The mask pattern is perturbed by random displacements at each point to generate a perturbed mask pattern. The source is optimized by performing a source optimization, source mask optimization, or other such process using the perturbed mask pattern.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

97.

METROLOGY APPARATUS AND ASSOCIATED METHODS

      
Application Number EP2024082165
Publication Number 2025/119609
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Cunbul, Ahmet, Burak
  • Tukker, Teunis, Willem
  • Goorden, Sebastianus, Adrianus

Abstract

Metrology apparatus comprises: an illumination module; and an interferometer module. The interferometer module comprises: a beam splitter for forming measurement and reference radiation; first optics for: projecting the measurement radiation onto the object; and collecting measurement radiation reflected from the object; and a detector arranged to receive: the reference radiation and; the reflected measurement radiation and to measure an interference pattern therebetween. The illumination module is configured to illuminate a plurality of distinct portions of the first optics pupil plane, each comprising a plurality of regions having different polarization states in the beam spot region. The detector is disposed such that: portions of the reference radiation and the measurement radiation that originate from the same distinct portion of radiation in the pupil plane spatially overlap; and portions of the reference radiation and the measurement radiation that originate from different distinct portions of radiation in the pupil plane are spatially distinct.

IPC Classes  ?

  • G01B 9/02015 - Interferometers characterised by the beam path configuration

98.

LASER POWERED PLASMA BASED EUV GENERATION SYSTEM

      
Application Number EP2024082211
Publication Number 2025/119612
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Der Hoeven, Saartje, Willemijn
  • Ganguly, Vasishta, Parthasarathy
  • Scaccabarozzi, Luigi
  • Hagenaars, Hubertus, Luberta
  • Chowdhury, Yassin
  • Waiboer, Robert Rens

Abstract

A laser powered plasma, LPP, based EUV generation system is configured to generate EUV light by irradiating droplets of a target material with at least one laser beam. The system comprises a metrology module configured to determine a position of a droplet of the target material by comparing a portion of a forward beam with a portion of a reverse beam that is reflected off from the target material. The metrology module comprises a polarization state dependent beam pickup arranged to split a portion from the forward beam and the reverse beam depending on a polarization state, and a polarization state adjuster arranged downstream of a beam path when compared to the polarization state dependent beam pickup, arranged to change a polarization state of at least one of the forward beam and the reverse beam such that the polarization states of the forward and reverse beams incident at the polarization state dependent beam pickup differs.

IPC Classes  ?

  • H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

99.

RADIATION SOURCE ASSEMBLY FOR GENERATING BROADBAND RADIATION

      
Application Number EP2024082643
Publication Number 2025/119632
Status In Force
Filing Date 2024-11-18
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Kohler, Johannes, Richard, Karl
  • Uebel, Patrick, Sebastian
  • Abdolvand, Amir

Abstract

Radiation source assembly and method for generating broadband radiation. The radiation source assembly comprises a solid core photonic crystal fiber, SC-PCF, having an input end and an output end, wherein the input end is configured to receive pulses of radiation from a pump source; a hollow core photonic crystal fiber, HC-PCF, that is filled with a gaseous 5 working medium and arranged to receive pulses of radiation at an input end of the HC-PCF that are output from the output end of the SC-PCF; and wherein the SC-PCF is configured to broaden a spectrum of the pulses of radiation by providing nonlinearity at normal group- velocity dispersion, and the HC-PCF is configured to generate broadband radiation by nonlinear interaction of the pulses of radiation with the gaseous working medium, and output 0 the broadband radiation at an output end of the HC-PCF.

IPC Classes  ?

  • G02F 1/35 - Non-linear optics
  • G02F 1/365 - Non-linear optics in an optical waveguide structure

100.

SIGNAL PROCESSING METHOD, SIGNAL PROCESSOR, ASSESSMENT METHOD, AND ASSESSMENT APPARATUS

      
Application Number EP2024084871
Publication Number 2025/120058
Status In Force
Filing Date 2024-12-05
Publication Date 2025-06-12
Owner ASML NETHERLANDS B.V. (Netherlands)
Inventor
  • Van Leeuwen, Richard, Michel
  • Kuiper, Vincent, Sylvester

Abstract

A signal processing method comprising: receiving, from a detector, e.g. in a charged particle assessment apparatus, having a plurality of detector elements, a detection signal comprising a sequence of N ascending sample values for each detector element and for each sampling period, where N is an integer greater than 1; and outputting for each detector element and for each sampling period an output value; wherein outputting comprises: selecting, for at least one detector element and at least one sampling period, the Nth sample value in the sequence of ascending sample values of that sample period as the output value; and determining, for at least one detector element and at least one sampling period, the output value on the basis of at least an Mth sample value in the sequence of ascending sample values of that sample period, where M is an integer less than N.

IPC Classes  ?

  • G01T 1/40 - Stabilisation of spectrometers
  • G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
  • H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
  • G01T 1/17 - Circuit arrangements not adapted to a particular type of detector
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