A method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method includes determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
2.
METHOD FOR DETERMINING DEFECTIVENESS OF PATTERN BASED ON AFTER DEVELOPMENT IMAGE
Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An apparatus comprising a multilayer structure configured to reflect electromagnetic radiation. The apparatus comprises a sensor configured to detect an angular distribution of the electromagnetic radiation after reflection from the multilayer structure. The apparatus comprises a processor configured to generate a first function at least partially based on the angular distribution of the electromagnetic radiation detected by the sensor. The processor is configured to compare the first function to a plurality of known functions associated with a plurality of known angular reflectivity profiles to identify a second function from the plurality of known functions that is most similar to the first function. The processor is configured to determine an angular reflectivity profile of the multilayer structure at least partially based on a known angular reflectivity profile that is associated with the second function.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Existing lithography apparatuses use a reticle clamp to hold a reticle, and a chuck having actuators and position sensors, for a reticle stage. This requires substantial mass and infrastructure on reticle stage chucks. Advantageously, new reticle motion control systems and methods for a lithography apparatus are described. In contrast to existing lithography apparatuses, the new systems and methods utilize magnetically actuatable targets configured to be coupled to a reticle. Electromagnetic actuators are configured to apply magnetic forces to the magnetically actuatable targets for suspending the patterning device in space in a lithography apparatus, and actuating the magnetically actuatable targets to facilitate contactless precision movements of the reticle for semiconductor lithography.
Disclosed herein is a computer system configured to perform a method of determining operational data for a control system of a lithographic apparatus, the method comprising: determining initial operational data for use in performing exposure processes on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics of the changed operational data so as to determine changes to the initial operational data that improve the one or more performance metrics; and using operational data with an applied change so as to improve one or more of the performance metrics; wherein: the operational data includes the route of the substrate for performing the exposure processes and the movement of the substrate along the route; and the applied change to the operational data includes a change to the route and/or a change to the acceleration of the substrate along part of the route.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An extreme ultraviolet (EUV) system includes a vessel for generating radiation, a mirror, a gas flow assembly, and an exhaust. The system provides a first gas flow path in the vessel when the system is generating EUV radiation. The system provides a second gas flow path in the vessel when the system is not generating EUV radiation. The system can switch between the first gas flow path and the second gas flow path in a few milliseconds.
A connection between an ion pump and a charged-particle beam apparatus includes a flexible conduit connecting the ion pump to the charged-particle beam apparatus. The flexible conduit may have a stiffness of less than 2E4 Newtons per meter. And the flexible conduit may be configured to maintain a vacuum level of less than 1E-6 Torr in the charged-particle beam apparatus.
A metrology method, and associated metrology apparatus, for determining one or more parameters of a periodic target on an object is disclosed. The periodic target is adjacent to a reference mark having a pitch equal to that of the periodic target. The method comprises projecting radiation onto the object such that a first portion of the radiation is incident on the periodic target and a second portion of the radiation is incident on the reference mark. The method further comprises measuring at least one interference pattern formed by contributions to a single diffraction order from both the first and second portions of radiation. The method further comprises determining the one or more parameters in dependence on the at least one interference pattern.
A system and method for correction of image offsets in a multi-detector charged particle beam apparatus comprises a plurality of charged particle detectors and a hardware-based time offset correction system. The hardware-based time offset correction system is configured to correct a time difference among detection signals from the plurality of detectors based on a predetermined time offset. The predetermined time offset may be calibrated according to a calibration process.
Disclosed is a method of predicting an effect of a potential substrate table maintenance action relating to a substrate table of a lithographic apparatus. The method comprises obtaining per-layer substrate loading distortion status data relating to a distortion of a substrate or group of substrates resulting from loading the substrate onto said substrate table when exposing one or more layers; obtaining at least one per-layer sensitivity value describing a sensitivity of a substrate loading distortion induced error metric to said substrate loading distortion status data for one or more respective layers on said substrate; and determining the effect of a potential substrate table maintenance action on said substrate loading distortion induced error metric based on said per-layer substrate loading distortion status data and said at least one per-layer sensitivity value.
A radiation source includes a matter delivery system, an illumination source, and a jet flow generator. The matter delivery system directs target material to a target region. The illumination source irradiates the target material at the target region to generate radiation as an output of the radiation source. The jet flow generator directs a jet flow of a gas to the target region. The jet flow generator includes a flow injector and a diffuser. The flow injector adjusts a velocity profile of the jet flow. The diffuser adjusts a spread of the jet flow.
A radiation source includes a chamber and a gas purification apparatus. The chamber includes an irradiation region. The gas purification apparatus includes a gas pathway structure to direct an unpurified gas having contaminants. The gas pathway structure includes a first pathway section and a second pathway section. The first pathway section includes contaminant capture elements to capture the contaminant to produce purified gas. At least a portion of the contaminant capture elements are disposed along a plane that is substantially normal to a drift direction of the unpurified gas at the plane. The second pathway section includes gas cooling elements disposed downstream of the contaminant capture elements. The gas cooling elements cool the purified gas. An orientation of the second pathway structure is such that a drift direction of the purified gas is different from the drift direction of the unpurified gas.
A clamping system is described. The clamping system includes a membrane that functions as an intermediate layer between a reticle (or a wafer) and a clamp in a lithography apparatus. This membrane can be replaced in the field if it experiences wear, for example, instead of having to replace permanent components of the clamp, which is far more difficult. Because the membrane's dimensions are similar to those of a typical reticle, the membrane can be replaced using an existing reticle handling system that is a part of the lithography apparatus. The membrane is relatively thin and compliant compared to the clamp and/or the reticle such that the membrane may be configured to first couple to the reticle and conform to a shape of the reticle, and then couple to the clamp. This way the membrane forms a known tunable interface configured for coupling the reticle to the clamp.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
14.
METHODS AND SYSTEMS TO REDUCE EFFECTS OF UNCERTAIN CONDITIONS FOR RETICLE HEATING
A lithographic apparatus is configured to perform a lithographic process. The lithographic apparatus comprises an illumination system configured to illuminate a reticle and a projection system configured to project an image of the reticle onto a substrate, wherein the illuminating and projection comprise the lithographic process. The lithographic apparatus further comprises a controller configured to reduce effects of non-uniformity of the reticle in the lithographic process. The controller is configured to determine a status of the reticle, identify a model from a plurality of models based on the status, and predict, using the identified model, a thermal deformation associated with the reticle.
The disclosure provides an electrical connector for high power in a low pressure environment, the connector comprising: a male connection part configured to be connected to a first power interface, a female connection part for receiving the male connection part and configured to be connected to a second power interface, a first conductive shield enclosing the male connection part and the female connection part, the first conductive shield being electrically connected to at least one of the male connection part and the female connection part, and an isolating part enclosing the first conductive shield.
H01R 13/53 - Bases or cases for heavy dutyBases or cases with means for preventing corona or arcing
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01R 43/26 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for engaging or disengaging the two parts of a coupling device
Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is an imaging method comprising obtaining a set of primary deconvolution kernels or a set of impulse responses relating to an optical system used to capture said image; obtaining said image signal, said image signal being subject to one or more imaging effects including at least one or more non-isoplanatic imaging effects; performing a low-rank approximation on said set of primary deconvolution kernels or impulse responses to determine respectively a set of deconvolution modes or a set of impulse response modes, each deconvolution mode comprising a modal secondary deconvolution kernel and a modal weight function and each impulse response mode comprising a modal impulse response and a modal inverse weight function; obtaining at least approximated imaging effect-free object information related to said object by applying said modal secondary deconvolution kernels and modal weight functions or said modal impulse responses and modal inverse weight functions to said image signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G06T 5/10 - Image enhancement or restoration using non-spatial domain filtering
Systems, non-transitory computer readable medium, and methods for determining one or more parameters used by an e-beam for an overlay measurement are disclosed. In some embodiments, the method comprises determining an acquisition time for the overlay measurement of a wafer stack based on a plurality of characteristics of the wafer stack and a plurality of backscattered electron (BSE) yields detected at a plurality of features on the wafer stack. The method also comprises determining the one or more parameters including a landing energy of the e-beam based on optimization of the acquisition time for the overlay measurement.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
19.
METHOD OF FORECASTIG A DRIFT IN A PARAMETER OF INTEREST IN A SEMICONDUCTOR MANAUFACTURING PROCESS
Described is a method for predicting future evolution of a parameter of interest of a manufacturing process for manufacturing integrated circuits, the method comprising: obtaining metrology data relating to the parameter of interest; forecasting a first statistical characteristic of future values of the parameter of interest by applying a first parameter model to the metrology data and subsequently obtaining residuals data of the first parameter model; forecasting a second statistical characteristic of future values of the parameter of interest by applying a second parameter model to the residuals data of the first parameter model; and predicting the future evolution of the parameter of interest of the manufacturing process based on comparison of at least one of the first statistical characteristic and the second statistical characteristic to at least one reference value.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
20.
METHOD FOR CONTROLLING A MANUFACTURING APPARATUS AND ASSOCIATED APPARATUSES
Disclosed is a method for determining a correction for control of at least one manufacturing apparatus used in a manufacturing process for providing structures to at least one region on a substrate, said region comprising at least a first sub-region and a second sub-region in a common layer. The method comprises obtaining process error data relating to said manufacturing process when forming said first sub-region on a substrate, determining a first on-product error from said process error data, said on-product error relating to an error in formation of said first sub-region; and determining, from said on-product error, a correction for said manufacturing process when forming said second sub-region on said substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A colour selection module, for outputting radiation having a desired spectral bandwidth and central wavelength, comprises: a radiation input for receiving an input beam of radiation; a first dispersive arrangement for receiving the input beam of radiation from the radiation input and outputting a first dispersed beam of radiation; a second dispersive arrangement for receiving at least a portion of the first dispersed beam of radiation and outputting a second dispersed beam of radiation; a radiation output arrangement for receiving said second dispersed beam of radiation and outputting said second dispersed beam of radiation from the colour selection module, whereby rotation of the second dispersive arrangement changes a second direction of travel and a second spatial distribution of the second dispersed beam of radiation, and hence spectral bandwidth and central wavelength of said second dispersed beam of radiation received and output by the radiation output arrangement.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a method of determining a correction for a measurement of at least one target on a substrate, the target comprising one or more parameter of interest sensitive sub-targets which are each sensitive to a parameter of interest and one or more parameter of interest insensitive sub-targets which are substantially less sensitive or insensitive to the parameter of interest, the method comprising. The method comprises obtaining a respective first measurement parameter value relating to each of said one or more parameter of interest sensitive sub-targets; obtaining a respective second measurement parameter value relating to each of said one or more parameter of interest insensitive sub-targets; and determining a correction for each said first measurement parameter value using said second measurement parameter values and/or detecting the presence of an effect likely to impact accuracy of first measurement parameter values from said second measurement parameter values.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
23.
WAFER EDGE INSPECTION OF CHARGED PARTICLE INSPECTION SYSTEM
An improved system is disclosed for wafer outer portion inspection in a charged particle beam system, such as a scanning electron microscope (SEM). The system uses multiple conductive rings around the wafer to correct an e-field distortion occurring at the wafer outer portion. The rings are applied with different complimentary voltages in order achieve a precise compensation of the e-field distortion.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.
A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each of the ADCs, at least one statistical value from a distribution of the image data output by the ADC; and changing at least one setting of at least one of the ADCs based on the calculated at least one statistical values so as to compensate for any mismatch between the at least one statistical value of the ADCs.
A method for determining an impact of a variation of a first pupil from a target pupil (for example a dipole) in a first direction within a two-dimensional field is disclosed. The method comprises carrying out the following for a plurality of positions within the field. First, reference and signal measurements are made of a quantity indicative of a position/orientation of an aerial image using a reference pupil and the first pupil. Second, a first error is determined as a difference between the reference measurement and the signal measurement. Third, the first error is corrected for a difference that is attributable to the difference between the reference pupil and the target pupil so as to form a second error. The second error quantifies the difference attributable to the variation of the first pupil from the target pupil across the field.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A pellicle for EUV lithography includes a core layer having silicon and having at least one non-oxidised surface, and a cap layer at at least one major surface of the core layer. The cap layer includes carbon and/or boron. The cap layer may be removed before or during an exposure operation.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A target material generator includes a fluid flow path between reservoir system and a nozzle supply system, and a coupling assembly in the fluid flow path. The target material generator is a part of an extreme ultraviolet light source. The coupling assembly includes a first fitting coupled to a second fitting to thereby form a flow conduit along the fluid flow path, wherein a seal is formed between the first fitting and the second fitting, and a sleeve disposed along inner walls of the flow conduit and between the seal and the flow conduit such that a contaminant trap is formed between the sleeve and the seal.
A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.
Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
31.
COOLING DEVICE FOR COOLING A POSITION-SENSITIVE COMPONENT OF A LITHOGRAPHY SYSTEM
A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
There is provided a method of configuring a lithographic apparatus comprising illuminator optics for directing at least a portion of a radiation beam to an illumination region of a patterning device so as to impart a pattern to the radiation beam and form a patterned radiation beam, the method comprising: configuring the illuminator optics such that at least two different portions of the patterning device, differing at least in position along a scanning direction of said illumination region, receive radiation from different regions of the illuminator optics within a pupil plane associated with the illuminator optics.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
33.
ELECTRON ENERGY FLUCTUATION STABILIZING AND COMPENSATING METHODS AND TECHNIQUES FOR ELECTRON-BEAM SYSTEMS
A method of particle beam parameter variation compensation for image inspection and enhancement are disclosed. Embodiments of the disclosure may provide a charged-particle beam parameter variation compensation method to correct electron source and electron beamlet fluctuations. Some embodiments of the disclosure may provide a method of monitoring an electrical signal of an electron source in real-time for fluctuations outside a threshold value and applying an adjustment signal to a component of a charged-particle beam apparatus based on the monitored electrical signal. The fluctuations of an electron beamlet may result from fluctuations of the electron source. This real-time fluctuation data may be used to adjust an image to remove unwanted noise and enable improved inspection accuracy and associated improved accuracy of metrology measurements.
A method for determining a measurement recipe for measuring a parameter of interest from a compound structure on a substrate. The method includes obtaining first training data relating to measurements of reference targets, the targets including: parameter of interest targets, each parameter of interest target having an induced set value which is varied over the parameter of interest targets; and one or more isolated feature targets, each including repetitions of one or more features. Second training data is obtained, the second training data including compound structure measurement signals obtained from measurement of one or more instances of the compound structure. One or more machine learning models are trained using the first training data and second training data to infer a value for the parameter of interest from a measurement signal related to the compound structure corrected for a feature asymmetry contribution.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An apparatus for adjusting the transmissivity of a pellicle membrane, the apparatus including an etching unit configured to etch material from the pellicle membrane, and a controller configured to control the etching unit to etch the pellicle membrane based on a predicted and/or observed wear pattern of the pellicle membrane. Also a method of adjusting the transmissivity of a pellicle membrane as well as a pellicle membrane, a pellicle assembly, and the use of the same.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01J 37/302 - Controlling tubes by external information, e.g. programme control
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
36.
SYSTEM AND METHOD FOR OVERLAY METROLOGY WITH REDUCED COHERENCE AND SPECKLE CONTRAST
An infinite impulse response optical filter includes at least one N x N multimode optical coupler and one or more mode-scrambling loops. The at least one N x N multimode optical coupler has N input ports and N output ports. One of the N input ports is coupled to a laser source that generates a light beam. The at least one N x N multimode optical coupler splits the light beam into a plurality of sub-beams divided in an amplitude domain across the N output ports. One of the N output ports is coupled to a detection system. The one or more mode-scrambling loops includes a mode scrambler and couples one of the N output ports to one of the N input ports. The one or more mode-scrambling loops produce a temporal incoherence and a spatial incoherence that reduce a peak power and a speckle contrast of the light beam.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A system includes an optical system, a reflective system, and a detection system. The optical system includes a lens element. The optical system generates a beam of radiation and directs the beam of radiation towards the reflective system. The reflective system directs the beam of radiation towards the lens element. The detection system receives scattered light from the lens element and directs the scattered light to an imaging sensor.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/94 - Investigating contamination, e.g. dust
38.
METHOD OF WAFER GROUNDING UTILIZING WAFER EDGE BACKSIDE COATING EXCLUSION AREA
Systems and methods are provided for grounding a wafer in a charged particle beam apparatus. The systems and methods include providing an exclusion area in a backside film on the wafer of sufficient size to allow an electrical connection between the wafer and an electrical contact of the charged particle beam apparatus. The systems and methods include contacting a pin body to a surface of the wafer, the wafer having a coating on the surface, and the pin body comprising a first tip and a second tip each extending from the pin body; wherein the contacting takes place at a first exclusion area of the coating by any one of the first tip, the second tip, or any combination thereof.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
39.
METHODS RELATED TO AN AUTOENCODER MODEL OR SIMILAR FOR MANUFACTURING PROCESS PARAMETER ESTIMATION
A method for ordering and/or selection of latent elements for modeling low dimensional data within a latent space representation, the low dimensional data being a reduced dimensionality representation of input data as determined by a first model component of a model, comprising the steps of training said model and selecting one of said latent element selections based on said training, said training comprising: reducing a dimensionality of the input data to generate said low dimensional data in said latent space representation; training a second model component of said model for each of one or more latent element selections; and optimizing an approximation of the input data as output by said second model component for each said latent element selection, thereby ranking at least one of said plurality of latent elements in the latent space representation based on a contribution of each latent element to the input data.
An extreme ultraviolet light source includes a laser, a target and a controller. The target may be a fuel droplet. The controller may determine optimal laser-to-droplet alignment positions in two orthogonal directions and update the position of the laser to maintain optimal alignment between the laser and fuel droplet during radiation generation. A method of determining an optimal laser-to-droplet alignment position includes fitting a polynomial to a radiation generation metric that varies based on the laser-to- droplet alignment position, and determining an optimal alignment position for the laser relative to the fuel droplet based on an apex of the polynomial fit; or evaluating commanded laser energy versus laser- to-droplet alignment position across an available alignment space to determine where commanded laser energy is maximum, and determining an optimal alignment position for the laser relative to the fuel droplet so that the alignment space is symmetric between the maximum points.
A method for selecting operating parameters of an EUV light source includes selecting a temporal or spatial relationship between a plurality of illuminations of a target by first, second, and third laser beams. The method further includes setting an initial value of a temporal delay between the second laser beam and the third laser beam. The method further includes setting an initial value of an energy of the second laser beam. The method further includes measuring an EUV energy generated by the illuminations of the target based on the initial value of the temporal delay between the second laser beam and the third laser beam and the initial value of the energy of the second laser beam. The method further includes adjusting the temporal delay between the second laser beam and the third laser beam and the energy of the second laser beam in response to the measuring.
A method and system for generating a mask pattern as multiple channels of information in which different types of features are generated in different channels of information. A target pattern is input to a machine learning (ML) model, and the ML model is executed to generate an output having multiple channels of information associated with a mask pattern corresponding to the target pattern. The multiple channels include: (a) a first channel that is configured to generate first mask information corresponding to main features to be printed on a substrate, and (b) a second channel that is configured to generate second mask information corresponding to sub-resolution assist features (SRAFs). The ML model may be trained by using a cost function configured to penalize a violation of a specified distance to be maintained between a predicted main feature and a predicted SRAF.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is an illumination module for a metrology device. The illumination module comprises a configurable illumination module operable to provide measurement illumination over a configurable range of illumination angles, a grating light valve module for controllably configuring a spectral configuration of the measurement illumination; and a controller operable to control the configurable illumination module and the grating light valve module such that the spectral configuration of the measurement illumination is varied in dependence with illumination angle within the range of illumination angles so as to obtain a desired detection condition for detection of diffracted radiation from a diffractive structure resultant from a measurement of the diffractive structure using the measurement illumination.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
44.
APPARATUS AND PROCESS FOR REDUCED DEPOSITION IN LIGHT SOURCE
A process for generating EUV radiation in an EUV light source includes: during a first period, mis- timing of light pulses in the EUV light source relative to a target material, resulting in a target material hit rate of zero during the first period and no production of EUV light; and, during a transition period following the first period, ramping up the target hit rate in the EUV light source.
The present disclosure provides methods and apparatus relating to assessing a sample surface using charged particles. In one arrangement, a method comprises, at a first region of a sample surface on which is an intended pattern, relative scanning a beam over an elongate row portion of the intended pattern along a first direction to generate a row data set. At a second region of the sample surface on which is a repeat of the intended pattern, the beam is relative scanned over an elongate column portion of the intended pattern along a second direction to generate a column data set. The row data set and the column data set are processed to compare between the row data set and the column data set a common portion of the intended pattern to assess the common portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
46.
CHARGING PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE-OPTICAL MODULE, METHOD OF PROJECTING A PLURALITY OF CHARGED PARTICLE BEAMS TOWARDS A SAMPLE
The disclosure relates to apparatus and methods for projecting a plurality of charged particle beams towards a sample, and particularly for projecting the beams with reduced aberrations. In one arrangement, a charged particle-optical device comprises a lens array configured to focus a plurality of beams in a beam grid towards a sample position. A corrector comprises at least two aperture arrays having aperture patterns, including one or more pairs of facing aperture surfaces. Each pair corresponds to a species of correction for a respective aberration of the beam grid. A voltage supply is configured to apply a potential difference between the or each pair of facing aperture surfaces to cause the respective species of correction to be applied, the applied potential difference selectable to define a magnitude of the respective species of correction substantially independently of focusing of the beam grid at a sample position.
An actuator for positioning a motion stage, the actuator comprising a coil and a temperature regulating unit for transferring heat to and from the coil, wherein the temperature regulating unit comprising: a thermal conducting cooling plate provided with a cooling fluid channel; a potting layer surrounding the coil for transferring actuation force, transferring dissipated heat from the coil to the cooling plate and electrically insulating the coil; and a phase-change material arranged proximate to the coil for buffering heat.
H02K 9/19 - Arrangements for cooling or ventilating for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02K 9/22 - Arrangements for cooling or ventilating by solid heat conducting material embedded in, or arranged in contact with, the stator or rotor, e.g. heat bridges
H02K 41/03 - Synchronous motorsMotors moving step by stepReluctance motors
H02K 3/24 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors with channels or ducts for cooling medium between the conductors
Disclosed is a method for exposing structures onto a plurality of substrates using at least one lithographic apparatus. The method comprises: measuring each substrate of the plurality of substrate in accordance with a set of measurement timings for measurement actions comprised in measuring each substrate; and performing a plurality of exposures on each of said substrates; wherein variation 5 in said set of measurement timings is reduced and/or minimized per substrate of said plurality of substrates.
A lithography system includes a reticle, an optical element, a substrate, a database, and a predictor. The database includes a plurality of heating models for the reticle, optical element, and/or substrate, which are generated offline using a combination of simulated and measured data. The predictor utilizes a heating model in the plurality of heating models to predict reticle, optical element, and/or substrate temperature and deformations before wafer production begins.
A method is disclosed for controlling power supplied to an EUV light source that includes receiving, by a controller, a trigger signal configured to initiate a plurality of pulses from a light source, and synchronizing, by the controller, a power control signal with the trigger signal. The power control signal is configured to control a supply of power to one or more light amplifiers. A controller for a light source and a light source are also disclosed.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
51.
METROLOGY METHOD FOR A DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED COMPUTER PROGRAM
A method of monitoring a path-length difference (PLD) between a scattered beam and a reference beam in a digital holographic microscope comprising obtaining at least one hologram image associated with at least a wavelength of the illumination radiation and identifying a point of coincidence for the at least one hologram image, the point of coincidence being a point in the at least one hologram image for which the PLD between the reference beam and the scattered beam of each of said beam pairs is zero.
G03H 1/04 - Processes or apparatus for producing holograms
G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
G03H 1/26 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique
52.
METHOD OF FORMING A PATTERNED LAYER OF MATERIAL, METHOD OF FORMING AN ELECTRONIC DEVICE, APPARATUS FOR FORMING A PATTERNED LAYER OF MATERIAL
The disclosure relates to methods and apparatus for forming a patterned layer of material. In one arrangement, the method comprises providing a substrate having a deposited layer of diamondoids on at least a portion of the substrate. A selected portion of a surface of the substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion and thereby form a patterned layer of material in a pattern defined by the selected portion.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
53.
SENSOR AND METHOD FOR QUALIFICATION OF A TOPOGRAPHY OF A SURFACE OF A DIE FOR DIE BONDING
A system for die bonding comprising a sensor configured to determine a characteristic of a topography of a surface of one or more semiconductor dies, the sensor comprising: a radiation emission system configured to emit radiation having a substantially flat wavefront; and a radiation detector configured to detect at least some of the radiation after reflection by the one or more semiconductor dies to determine the characteristic of one or more semiconductor dies, wherein the system is configured to, based on output of the sensor, either: 1) accept and/or reject a semiconductor die for die bonding, or 2) reposition a semiconductor die and/or output the semiconductor die for cleaning prior to bonding.
A system comprising: a targeted emission system configured to induce stress features in a semiconductor die; and a processor system configured to: obtain a pattern of stress features, the pattern of stress features configured to alter a distortion of the semiconductor die; and cause the targeted emission system to generate stress features in the semiconductor die based on the pattern of stress features, wherein the targeted emission system comprises a femtosecond laser system, wherein the semiconductor die is a semiconductor die bonded to a further semiconductor die and wherein the distortion is caused, at least in part, by stress induced by the bonding.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
G11C 29/00 - Checking stores for correct operationTesting stores during standby or offline operation
G11C 29/02 - Detection or location of defective auxiliary circuits, e.g. defective refresh counters
G11C 29/56 - External testing equipment for static stores, e.g. automatic test equipment [ATE]Interfaces therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An apparatus and method of operating said apparatus, the apparatus comprising at least a first stage configured to support one or more donor dies and a second stage configured to support one or more target dies, the apparatus configured to measure a position of the one or more donor dies and configured to measure a position of the one or more target dies and to provide relative movement between at least one of the one or more donor dies and a corresponding one of the one or more target dies for die bonding by movement of the first stage and/or the second stage.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/00 - Details of semiconductor or other solid state devices
56.
CONTROL OF LASER OF EUV SOURCE OF A LITHOGRAPHIC APPARATUS
Disclosed herein is a lithographic apparatus comprising: an EUV source that comprises a laser; and a control system; wherein: the control system is configured to obtain timing data of intended exposure processes; and the control system is configured to determine, in dependence on at least the timing data, control data for changing the instantaneous output power of the laser such that, during the intended exposure processes, an average output power of the laser is substantially maintained at a constant level, or changes at, or slower than, a pre-determined rate.
An improved technology for detecting discharge events in charged particle systems is discloses. An electron-optical apparatus for projecting a charged particle beam towards a sample comprises a stage configured to support a sample, a vacuum chamber configured to maintain a vacuum, an electron-optical device configured to generate a charged particle beam and direct the charged particle beam towards the sample, and an optical detection system configured to detect electromagnetic radiation within the apparatus, the optical detection system comprising a sensor and an optical waveguide having a first end positioned so as to detect electromagnetic radiation within the apparatus.
A method comprising: providing a semiconductor die on a carrier structure proximate to an acceptor location, wherein there is provided a flexible interposer layer between the semiconductor die and the carrier structure holding the die; applying radiation to, or near, the semiconductor die to cause transfer of the semiconductor die toward the acceptor location, wherein the transferred semiconductor die is bonded to the acceptor location by intermolecular bonding, wherein the radiation causes the flexible interposer layer to bend prior to contact of the semiconductor die with the acceptor location; and heating the semiconductor die in contact with the acceptor location to cause or improve electrical contact between the semiconductor die and the acceptor location.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
59.
METHOD OF PELLICLE DETECTION, AND COMPUTER PROGRAM FOR PELLICLE MONITORING
A method of pellicle monitoring using an alignment sensor of a lithographic apparatus, wherein: the alignment sensor is configured to sense alignment using a patterning device alignment mark and a stage alignment mark; and the pellicle intersects a light path between the alignment sensor and the patterning device; wherein the method comprises: using the alignment sensor, measuring a first detection intensity; using the alignment sensor, measuring a second detection intensity, being the intensity of light reflected from the patterning device; and comparing the first and second detection intensities.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
60.
READOUT CIRCUIT DESIGN FOR CHARGED PARTICLE DETECTION APPLICATIONS
An electron counting detector includes a sensing element and a detection circuit configured to detect electron arrival events by comparing the relative frequencies or phases of two ring oscillators. A reference ring oscillator may be configured to output a reference signal to a comparator, and a detection ring oscillator may be configured to output a detection signal to the comparator. In the absence of an electron arrival event, the detection signal may remain correlated with the reference signal. When an electron arrives at the sensing element, charges form the sensing element are injected to an N-well of the detection ring oscillator, altering its oscillation frequency or phase. The altered frequency or phase of the detection oscillator with respect to the reference oscillator may be detected by the comparator as an electron arrival event.
In low-energy-electron diffraction (LEED), an electron diffraction pattern is detected, and an image may be formed, based on electrons reflected and diffracted from a sample surface. A diffraction pattern can be generated from the interaction of a relatively localized coherent electron beam incident on the sample surface (e.g., a selected area of the sample surface). Information from the diffraction pattern can be used to determine (or reconstruct) structures on the sample surface. Advantageously, selected area LEED (SA-LEED), or LEED in combination with ptychography (to generate a series of diffraction patterns which are each associated with a given particle beam position, where particle beams centered at neighboring positions are partially overlapping), may be used to determine semiconductor wafer surface structures through lensless imaging for defect inspection and/or other purposes.
G01N 23/20058 - Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
A component for mounting a lens in a charged-particle beam apparatus has a coefficient of thermal expansion (CTE) and a shape configured to cause the component to deflect by a predictable amount in a Z direction when subject to a predetermined non-zero temperature change such that a working distance of the lens remains substantially unchanged over the predetermined non-zero temperature range.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
A method for determining a vertical position of a structure on a substrate with respect to a nominal vertical position is disclosed. The method comprises obtaining complex field data relating to scattered radiation from said structure, for a plurality of different wavelengths, determining variation in a phase parameter with wavelength from said complex field data; and determining said vertical position with respect to a nominal vertical position from the determined variation in phase with wavelength.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/22 - Measuring arrangements characterised by the use of optical techniques for measuring depth
64.
ILLUMINATION ARRANGEMENT FOR A METROLOGY DEVICE AND ASSOCIATED METHOD
Disclosed is an illumination arrangement for providing at least one radiation beam for use as an illumination beam and/or reference beam in a metrology device. The illumination arrangement comprises at least one radiation beam modifier module operable to receive source illumination and output a modified radiation beam comprising a first beam component and a second beam component. Each radiation beam modifier module comprises at least one path length varying arrangement for controllably varying the optical path length of at least one of said first beam component and said second beam component, such that said first beam component and second beam component of said modified radiation beam comprise a respective different optical path length.
G02B 21/16 - Microscopes adapted for ultraviolet illumination
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
G03H 1/04 - Processes or apparatus for producing holograms
G03H 1/06 - Processes or apparatus for producing holograms using incoherent light
G03H 1/26 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique
65.
SYSTEMS AND METHODS FOR VOLTAGE CONTRAST DEFECT DETECTION
Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.
G01N 1/44 - Sample treatment involving radiation, e.g. heat
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
66.
CHARGED PARTICLE-OPTICAL APPARATUS AND METHOD OF PROCESSING A SAMPLE
A charged particle-optical apparatus comprises: a charged particle-optical device configured to direct a beam grid of beams of charged particles toward a region of a sample surface of a sample; a sample support configured to support the sample; and a controller configured to control the charged particle-optical apparatus to selectively apply one of a plurality of predetermined beam area patterns so as to process portions of respective beam areas of the region with respective beams in accordance with the applied beam area pattern; wherein the beam area patterns are associated with respective proportions of the beam areas being processed, and at least one of the beam area patterns comprises at least one elongate strip.
This application provides a color selection module, and a method, for filtering a selectable wavelength band. The color selection module comprises a light input; a light output; a filter; an actuatable mirror, and a return mirror. The light input receives an input light beam. The actuatable mirror receives the input light beam and reflects the input light beam towards a selectable position on the filter. The actuatable mirror is configured for selecting the position by actuation. The filter receives the reflected input light beam from the actuatable mirror on the selectable position and filters the selectable wavelength band from the reflected input light beam. The return mirror reflects the filtered wavelength band towards the actuatable mirror, and the actuatable mirror reflects the filtered selectable wavelength band towards the light output. The light output outputs light of the selectable wavelength band.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
The present disclosure relates to a module for a charged particle-optical device configured to direct one or more primary beams of charged particles toward a sample location along a beam path, the module comprising: a wall for a vacuum chamber; and an actuatable charged particle-optical element configured to operate on charged particles directed along the beam path towards the sample location; wherein the actuatable charged particle-optical element is configured to be located outside the wall for the vacuum chamber and to be actuatable relative to the beam path in a direction across the primary beam and/or about an axis across the primary beam.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
There is provided a method of metrology comprising: obtaining calibration data from at least one first target comprising at least a first cluster of sub-targets and a second cluster of sub-targets, wherein said calibration data comprises a set of measurements of said at least one first target in a first orientation and a set of measurements of said at least one first target in a second orientation; and calibrating a model based on said calibration data such that the calibrated model is operable to: predict, from measurement data of at least one second target comprising at least a first cluster of sub-targets, predicted measurement data as would be obtained from a second cluster of sub-targets; or relate measurement data of at least one second target comprising at least a first cluster of sub-targets to corrected measurement data of the at least one second target.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
70.
METHOD OF MONITORING PROCESS DRIFT IN A SEMICONDUCTOR MANUFACTURING PROCESS
Described is a method of measuring at least one exposure offset error relating to a lithographic apparatus. The method comprises obtaining a substrate comprising a coating of a latent resist; performing at least a main exposure step to expose metrology structures into said latent resist; measuring at least said metrology structures in the undeveloped latent resist to obtain metrology data; and determining said exposure offset error from said metrology data. The measuring step is performed subsequently to said main exposure step without removing said substrate from the lithographic apparatus.
A charged-particle beam apparatus comprises a first aperture array including a plurality of elongated apertures configured to generate a plurality of primary beamlets from a primary charged- particle beam and project the plurality of primary beamlets on a second aperture array. The second aperture array may include a plurality of apertures configured to generate a plurality of probing beams from the plurality of primary beamlets. A first aperture located at a corner of the plurality of elongated apertures of the first aperture array may be vertically aligned with a second aperture located at a corner of the plurality of apertures of the second aperture array, and a size of the first aperture in a first direction may be smaller than the size of the second aperture in the first direction.
A method of monitoring and evaluating a wafer fabrication process variation using a characteristic of extracted two-dimensional measurement data of a fabricated feature on a wafer is disclosed. Two-dimensional measurement data may be determined without using a physical measurement or a mathematical model and does not rely on any prior assumption on how a process variation should behave. A wafer map may be generated to identify a spatial distribution of an impact of fabrication process variation on a fabricated feature. The extracted two-dimensional measurement of fabricated features may be combined and engineered to obtain more insight of the fabrication process and lead to the possibility of classification based on contour quality, modeling of process windows, and other wafer fabrication modeling applications.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
73.
CONVERSION LAYERS TO BLOCK OUTGASSING IN HYDROGEN PLASMA
A component for EUV lithographic apparatus comprises: a) a component core made of a material comprising i) at least a first metal Me or a Me-alloy core and ii) a contaminant X which is susceptible to form volatile compounds that outgas within an EUV lithographic apparatus environment, and b) a capping layer provided on the top of the core and forming an outer surface arranged to be in contact with the environment within the lithographic apparatus, wherein the capping layer comprises an oxide YO of a second metal Y, and wherein the second metal Y is selected such as at working temperature to chemically react with the X' contaminant atoms which diffuse from the core to the capping layer and towards the outer surface of the components, forming thereby an alloy X'Y within the capping layer such that substantially all the diffusing X' contaminant is bound in the capping layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
74.
SYSTEMS AND METHODS FOR SIGNAL-BASED DEFECT CLASSIFICATION IN TRANSIENT INSPECTION
Systems, methods, and non-transitory computer readable mediums for signal-based defect classification in transient inspection include obtaining a first image of a sample; locating a location of interest using the first image; obtaining a plurality of second images of the sample, wherein each second image of the plurality of second images corresponds to a different point in time of the location of interest; tracking variation of grey level (GLV) for the location of interest based on the plurality of second images; plotting a relationship between the GLV and a time at which the GLV was captured based on the plurality of second images; and determining, using the plotting, whether a defect has occurred at the location of interest.
Improved methods and apparatus for correcting measurements on an inspection image for a wafer inspection system are provided. An improved method comprises acquiring a first measurement for a first dimension and a second measurement for a second dimension on the inspection image; acquiring reference data associated with the first dimension and the second dimension; estimating a first measurement error for the first measurement and a second measurement error for the second measurement based on the reference data; and correcting the first measurement based on the estimated first measurement error and the second measurement based on the estimated second measurement error.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present invention provides a vacuum exposure apparatus. The vacuum exposure apparatus comprises: a vacuum chamber; a stage disposed within the vacuum chamber and configured to support a sample; a high voltage power supply unit disposed within the vacuum chamber; a high voltage power source disposed exterior to the vacuum chamber; and exactly one high voltage cable extending between 5 the high voltage power supply unit to an exterior of the vacuum chamber. A first end of the high voltage cable is connected to the high voltage power supply unit. A second end of the high voltage cable is connected to the high voltage power source. The high voltage cable is configured to carry a higher voltage than is output by the high voltage power source.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
H01J 5/50 - Means forming part of the tube or lamp for the purpose of providing electrical connection to it
A charged particle-optical module for generating a plurality of sub-beams 211-213 from a source beam 202 of electrons, the module for use in an charged particle-optical device for projecting a plurality of sub-beams 211-213 toward a sample. The charged particle module comprises: an electron source 201 comprising an emitter 63 configured to emit a source beam 202 along a divergent path; a beam limiter 236 defining an array of apertures 232 and positioned in the divergent path to form a grid of sub-beams from the source beam; a condenser lens array 231 configured to operate on the sub-beams; and a macro-corrector system 60 configured to act on the sub-beams. The macro-corrector system is at least partly comprised between the beam limiter and the condenser lens array.
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
Inventor
Dilissen, Ruben, Hendrik, C
Hettkamp, Philipp
Alvarez Alonso, Diego, Alejandro
Wiesweg, Florian
Abstract
An optical amplifier (200) comprising a flow passageway for a gas of the optical amplifier (200), a first swirl insert (150) in the flow passageway arranged to impart a desired swirling flow pattern to the gas, and a cyclonic particle trap (154) either or both around or downstream of the swirl insert (150) for collecting particle contamination from a radially outer portion of the swirling gas. The swirl insert comprises vanes (134) arranged to impart a cyclonic or helical flow to the gas, whereby particle contamination in the gas tends to move into or towards the radially outer portion of the swirling gas.
B01D 45/16 - Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by centrifugal forces generated by the winding course of the gas stream
A detection system is configured for a target material reservoir. The detection system includes: a feedthrough housing associated with a wall of the target material reservoir, the feedthrough housing defining a seal surface; an electrically-conductive member extending through the feedthrough housing; and a compressible element that is electrically insulating. The electrically-conductive member is inside the compressible element. The compressible element contacts the feedthrough housing at the seal surface of the feedthrough housing. The interface between the feedthrough housing seal surface and a surface of the compressible element forms a hermetic seal when the compressible element is compressed.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
80.
LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD WITH PREVENTING CONTAMINANT PARTICLES FROM BEING DEPOSITED ON A SENSITIVE COMPONENT, SUCH AS A PATTERNING SURFACE OF A PATTERNING DEVICE
Disclosed is a lithographic apparatus including: an illumination system for providing a beam of EUV radiation along a beam path; a holder for a patterning device configured to impart a pattern to the beam of radiation, the patterning device comprising a patterning surface with a pattern thereon; and an electron beam source configured to emit electrons toward the patterning surface and/or a part of the beam path adjacent the patterning surface.
An assembly comprising a vessel configured to receive a radiation beam. The assembly comprises an internal structure forming part of the vessel or enclosed within the vessel, and a temperature control system configured to control a temperature of the internal structure to be in a range of 77 K to 140 K.
A charged particle-optical arrangement for a charged particle beam apparatus configured to operate on at least one beam of charged particles, the electron-optical arrangement comprising: a first plate which defines at least one first aperture for passage of the at least one beam therethrough; and a second plate which defines at least one second aperture for passage of the at least one beam therethrough; and an actuator arrangement configured to apply a force to the first plate.
A method of inferring second metrology data relating to patterned substrate on which patterns have been exposed and on which processing has been performed, from first metrology data measured on the patterned substrate prior to performance of the processing. The method includes obtaining a model including a first model component. The first model component includes a machine learning model component having been trained to map the first metrology data to the second metrology data, the first model component further including a physics-based input channel for receiving physics-based input data. Second metrology data is inferred from the first metrology data using the first model component as biased by the physics-based input data on the physics-based input channel.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method is provided for measuring a characteristic feature or property of a sub-target (e.g., a component of an integrated circuit, IC, fabricated using a lithography production process). The sub-target is located on a target, which includes one or more other sub-targets. The method involves arranging each of the sub-targets in a plurality of disjunct positions within an illumination spot of electromagnetic radiation and measuring the intensity of electromagnetic radiation diffracted from each of the sub-targets at those respective positions. Corrected intensities of electromagnetic radiation diffracted by the corresponding sub-target are determined.
Described herein is a method and system for generating a mask pattern. A set of primitive elements of a target pattern is identified. The set of primitive elements are encoded in a feature vector space to generate a set of encoded primitive elements and aggregated to generate an encoded aggregation that represents the target pattern. The encoded aggregation is input to a mask prediction model, which generates a mask image that is representative of a mask pattern for the target pattern.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is an apparatus for and method of adjusting spectral properties of a laser curtain including a focal position of a laser curtain created by a tunable-wavelength laser with respect to a position of a mass of target material in which the wavelength of the laser radiation output by the tunable-wavelength laser is changed to cause a chromatic shift in the spectral property.
Systems, methods, and non-transitory computer readable mediums for scanning a sample with non-circular beam spots may include generating an elongated electron beam; orientating the elongated electron beam such that a length of the elongated electron beam is parallel to an edge of a pattern on the sample; scanning the pattern with the elongated electron beam; detecting electrons emitted from the sample during the scanning; and determining a characteristic of the pattern based on the detected electrons.
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
A substrate warpage determination system comprises at least three first supporting devices and at least three second supporting devices, forming first and second substrate support areas configured to carry a substrate, an actuator configured to move the at least three second supporting devices in a vertical direction, and a controller to drive the actuator. The controller is configured to determine a force exerted by the actuator, compare the determined force exerted by the actuator at the position in a vertical direction of the second substrate support area relative to the first substrate support area to a predetermined force at a predetermined position in the vertical direction of the second substrate support area relative to the first substrate support area, and determine a warpage of the substrate from the comparison.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
89.
METHOD AND SYSTEM FOR REDUCING CHARGING ARTIFACT IN INSPECTION IMAGE
Systems and methods for reducing charging artifacts in an inspection image include obtaining a set of inspection images, in which each of the set of inspection images includes a charging artifact; and training a machine learning model using the set of inspection images as input, in which the machine learning model outputs a set of decoupled features of the set of inspection images.
A method can include directing radiation toward at least two targets using an optical scanning system so as to generate first and second portions of scattered radiation. A first target can include a plurality of first grating line structures including features having a first bias value. A second target can include a plurality of second grating line structures including features having a second bias value. The method can include detecting the first and second portions of scattered radiation, generating a first measurement signal indicative of a first target position based on the first bias features, and generating a second measurement signal indicative of a second target position based on the second bias features. The method can include analyzing an effect of the first and second bias values on the first and second positions to determine at least one property of the set of targets.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
91.
DETECTION OF YIELD-CRITICAL DEFECTS USING THE MEDIAL AXIS OF 3D-STACKED CHARGED-PARTICLE BEAM INSPECTION IMAGES
An apparatus for detecting defects in a sample includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: acquiring a plurality of images, wherein each image is a location to be examined; segmenting each of the plurality of images; stacking the plurality of segmented images into a three-dimensional (3D) volume; calculating a medial axis of the 3D volume; generating a medial axis skeleton of the 3D volume based on the calculated medial axis; and evaluating the medial axis skeleton to determine whether there are any detected defects in the sample.
A method for performing a distributed wafer print check includes: inspecting a zone of a full field of a first wafer by a first inspection tool; determining defect locations in the zone of the first wafer by the first inspection tool; providing the defect locations of the zone of the first wafer to a second inspection tool; determining whether the defect locations of the zone of the first wafer repeat in a zone of a second wafer by the second inspection tool, wherein the zone of the first wafer is in a same location as the zone of the second wafer and the second inspection tool inspects the zone of the second wafer while the first inspection tool inspects another zone of the first wafer.
Samples and methods for determining a beam spot size include scanning a pattern on the sample with a charged-particle beam to generate an image. The pattern may include at least one inclined side edge and a top surface. The at least one inclined side edge may have an inclination angle that is controlled during manufacture of the sample to be between about 40-80 degrees. The beam spot size may be determined based on an imaging profile of the at least one inclined side edge derived based on the image.
A fluid handling structure configured to at least partly confine an immersion liquid to an immersion space between a final element of a projection system and a substrate, comprising: a gas channel configured to supply a gas flow towards the substrate via a gas channel opening; and a chamber configured to define a control volume fluidically connected to the gas channel, the chamber being actuatable to vary a flow rate of the gas via the gas channel opening by varying a size of the control volume.
A method of joining a support member to a substrate support, the method comprising: inserting the support member into a recess in the substrate support with a bonding material between facing surfaces of the support member and the substrate support; and applying a bonding temperature and a bonding pressure to the bonding material, wherein the bonding material comprises a first material and a second material, wherein the first material comprises a powder of an oxalate, and the second material comprises nanoparticles.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Described herein is a method and system for optimizing a source of a lithographic apparatus using a perturbed mask pattern. A mask pattern corresponding to a target pattern is obtained, and a contour of the mask pattern is extracted. A set of points are assigned along a contour and a random displacement of the contour is determined at each point. The mask pattern is perturbed by random displacements at each point to generate a perturbed mask pattern. The source is optimized by performing a source optimization, source mask optimization, or other such process using the perturbed mask pattern.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Metrology apparatus comprises: an illumination module; and an interferometer module. The interferometer module comprises: a beam splitter for forming measurement and reference radiation; first optics for: projecting the measurement radiation onto the object; and collecting measurement radiation reflected from the object; and a detector arranged to receive: the reference radiation and; the reflected measurement radiation and to measure an interference pattern therebetween. The illumination module is configured to illuminate a plurality of distinct portions of the first optics pupil plane, each comprising a plurality of regions having different polarization states in the beam spot region. The detector is disposed such that: portions of the reference radiation and the measurement radiation that originate from the same distinct portion of radiation in the pupil plane spatially overlap; and portions of the reference radiation and the measurement radiation that originate from different distinct portions of radiation in the pupil plane are spatially distinct.
A laser powered plasma, LPP, based EUV generation system is configured to generate EUV light by irradiating droplets of a target material with at least one laser beam. The system comprises a metrology module configured to determine a position of a droplet of the target material by comparing a portion of a forward beam with a portion of a reverse beam that is reflected off from the target material. The metrology module comprises a polarization state dependent beam pickup arranged to split a portion from the forward beam and the reverse beam depending on a polarization state, and a polarization state adjuster arranged downstream of a beam path when compared to the polarization state dependent beam pickup, arranged to change a polarization state of at least one of the forward beam and the reverse beam such that the polarization states of the forward and reverse beams incident at the polarization state dependent beam pickup differs.
Radiation source assembly and method for generating broadband radiation. The radiation source assembly comprises a solid core photonic crystal fiber, SC-PCF, having an input end and an output end, wherein the input end is configured to receive pulses of radiation from a pump source; a hollow core photonic crystal fiber, HC-PCF, that is filled with a gaseous 5 working medium and arranged to receive pulses of radiation at an input end of the HC-PCF that are output from the output end of the SC-PCF; and wherein the SC-PCF is configured to broaden a spectrum of the pulses of radiation by providing nonlinearity at normal group- velocity dispersion, and the HC-PCF is configured to generate broadband radiation by nonlinear interaction of the pulses of radiation with the gaseous working medium, and output 0 the broadband radiation at an output end of the HC-PCF.
A signal processing method comprising: receiving, from a detector, e.g. in a charged particle assessment apparatus, having a plurality of detector elements, a detection signal comprising a sequence of N ascending sample values for each detector element and for each sampling period, where N is an integer greater than 1; and outputting for each detector element and for each sampling period an output value; wherein outputting comprises: selecting, for at least one detector element and at least one sampling period, the Nth sample value in the sequence of ascending sample values of that sample period as the output value; and determining, for at least one detector element and at least one sampling period, the output value on the basis of at least an Mth sample value in the sequence of ascending sample values of that sample period, where M is an integer less than N.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01T 1/17 - Circuit arrangements not adapted to a particular type of detector