A projection unit for a level sensor, the projection unit including: a first light pipe having a first inlet configured to receive radiation from a source and a first outlet; and a second light pipe having a second inlet configured to receive the radiation from the first light pipe and a second outlet. The unit may include a lens device configured to receive radiation from the second outlet and to output radiation having a predetermined distribution of intensity and irradiance.
Systems, methods, and media for determining a processing parameter associated with a lithography process. In some embodiments, image data of features on a substrate may be obtained, and the image data may be analyzed in Fourier space. Based on the analysis, an amplitude and a phase may be determined, and an overlay of the features may be determined based on the amplitude and the phase.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of performing a lithographic performance qualification test. The method includes: obtaining one or more exposure layouts, each relating to exposure of multiple exposure fields on a substrate; performing a dummy exposure on a substrate including photoresist for each of the one or more exposure layouts, the dummy exposure using no exposure illumination or exposure illumination having an exposure energy below an exposure threshold of the photoresist; monitoring one or more exposure parameters of each dummy exposure to obtain exposure parameter data; and evaluating lithographic performance of each dummy exposure and/its corresponding exposure layout from the exposure parameter data respective to that dummy exposure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
4.
METHOD OF PATTERNING A TARGET LAYER, APPARATUS FOR PATTERNING A TARGET LAYER
Methods and apparatus are disclosed for patterning a target layer by selectively removing material. In one arrangement, the target layer is irradiated with a patterned beam. The patterned beam generates a plasma in a plasma pattern that locally interacts with the target layer to define where material is to be removed from the target layer. A bias voltage is applied to the substrate during the irradiation to control a distribution of energies of ions of the plasma impinging on the target layer.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
5.
OVERLAY METROLOGY BASED ON TEMPLATE MATCHING WITH ADAPTIVE WEIGHTING
A method of image template matching for multiple process layers of, for example, semiconductor substrate with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the image. A method of template matching a grouped pattern or artifacts in a composed template is described, wherein the pattern comprises deemphasized areas weighted less than the image templates. A method of generating an image template based on a synthetic image is described. The synthetic image can be generated based on process and image modeling. A method of selecting a grouped pattern or artifacts and generating a composed template is described. A method of per layer image template matching is described.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
The invention provides an elevation pin assembly for loading/unloading a substrate, the assembly comprising: - a plurality of support pins, the plurality of support pins being higher in number than 3; - an actuator assembly configured to cause a displacement of the plurality of support pins, and - a control unit configured to control the displacement of the plurality of pins to pre-shape the substrate while loading/unloading the substrate.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
7.
MANUFACTURING A HOLLOW CORE PHOTONIC CRYSTAL FIBER
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V (Germany)
Inventor
Lagler, Josef
Staab, Gordon
Bergler, Michael, Sebastian
Abstract
Disclosed is a method of manufacturing an optical fiber, the method comprising: providing a fiber manufacturing intermediate product, the fiber manufacturing intermediate product comprising: (i) a hollow core cane comprising a first jacket with a hollow inner structure, wherein a plurality of capillaries are fused to the first jacket within the hollow inner structure; and (ii) a second jacket around the hollow core cane; roughening an outer surface of the second jacket over a portion (310) of the second jacket; coupling an end of the fiber manufacturing intermediate product to a pressure connector (402); and drawing a hollow core photonic crystal fiber from the fiber manufacturing intermediate product.
An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source is configured to generate a beam of radiation. The optical system is configured to receive and direct the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer. The beam displacer includes two or more reflective surfaces. The beam displacer is configured to receive the beam along the optical axis, perform reflections of the beam so as to displace the optical axis of the beam, move linearly in at least a first dimension to shift the displaced optical axis, and preserve an optical property of the beam such that the optical property is invariant to the linear movement. The detector is configured to receive the scattered radiation and to generate a measurement signal based on the scattered radiation.
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
The embodiments of the present disclosure provide a charged particle optical device for projecting charged particle beams towards a sample position, arranged in a grid. The device comprises: a beam limiting aperture array and strip arrays. In the beam limiting aperture array is defined a plurality of apertures so as to generate the grid of beams. The strip arrays are positioned along beam paths. The strip arrays extend across the path of the plurality of beams to operate on the charged particles that pass along the path between strips of the respective strip array to collimate the path of the beams. The orientation of the strips in the array of two different arrays along the beam path are different. The beam limiting aperture array, the strip arrays or both are configured to mitigate a characteristic of the grid that is induced by passage of the beams through the strip arrays.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
10.
DATA PROCESSING METHOD, CHARGED PARTICLE ASSESSMENT METHOD AND SYSTEM
A data processing method for image data obtained by scanning a charged particle beam across a sample; the method comprising: classifying pixels of the image data into foreground pixels and background pixels to generate a foreground pixel map; and encoding the foreground pixel map as encoded data using a sparse matrix encoding technique.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts
H01L 21/66 - Testing or measuring during manufacture or treatment
A module for a laser-produced plasma radiation source includes: first optics; second optics; and a reverse beam monitoring apparatus. The first optics are arranged to receive a first radiation beam having a first wavelength and a second radiation beam having a second wavelength and to direct the first and second radiation beams so as to form a combined radiation beam propagating along a common optical path toward the second optics. The second optics includes a polarizing beam splitter. The second optics are arranged to receive the combined radiation beam and to direct at least a first portion of the combined radiation beam towards a target region. The second optics are further arranged to receive a reflected portion of the first portion of the combined radiation beam and to direct the reflected portion towards the reverse beam monitoring apparatus. Associated methods are also disclosed.
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V (Germany)
Inventor
Lagler, Josef
Bergler, Michael, Sebastian
Uebel, Patrick, Sebastian
Abstract
A method of manufacturing a preform for use in the manufacturing process of a hollow-core photonic crystal fiber, the method comprising: (i) providing an elongated preform jacket with a hollow inner structure, the elongated preform jacket having a first and second end; (ii) inserting a hollow capillary preform into the hollow inner structure such that the hollow capillary preform is in contact with the hollow inner structure at a contact position and protrudes out of the hollow inner structure at the first end and at the second end; (iii) at the first end, locally heating a protruding portion of the hollow capillary preform; (iv) bending the protruding portion around the first end of the preform jacket; and (v) applying additional heat to a portion of the hollow capillary preform that is bent around the elongated preform jacket to fuse it to an outer surface of the elongated preform jacket.
The present disclosure provides a deflector driver for driving a deflector of a charged-particle inspection apparatus. The deflector driver may comprise a fully-differential amplifier that is configured to generate fully-differential outputs of which absolute value is greater than 100V. Wherein the fully-differential outputs may enable a plurality of deflector electrodes of the deflector to influence a charged particle beam of the charged-particle inspection apparatus based on the fully-differential outputs.
A lithographic apparatus including: a patterning device; a first positioner to position the patterning device support; a substrate support; a second positioner to position the substrate support; and a projection system configured to project a radiation beam from a patterning device onto a substrate, wherein the patterning device support, the first positioner, the substrate support, and/or the second positioner has, during use, a plurality of superconductive coils that are configured to generate a magnetic field, wherein the plurality of superconductive coils are grouped in a plurality of separable and discrete modules which, when assembled, form the assembly, each module including a subset of one or more coils of the plurality of coils and including an electrical interface to provide electricity to the subset of one or more coils and a cooling interface to provide cooling for the superconductivity of the subset of one or more coils.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
15.
BEAM POSITION DISPLACEMENT CORRECTION IN CHARGED PARTICLE INSPECTION
An improved method and system for correcting inspection image error are disclosed. An improved method comprises acquiring a set of first beam positions on a test wafer while a wafer stage supporting the test wafer moves at a first velocity; acquiring a set of second beam positions, corresponding to the set of first beam positions, on the test wafer while the wafer stage moves at a second velocity; calculating a beam position displacement of a beam while the wafer stage moves at a third velocity in a range of velocities from the first velocity to the second velocity; and adjusting a beam position of the beam based on the calculated beam position displacement.
Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
17.
SELF-DIFFERENTIAL CONFOCAL TILT SENSOR FOR MEASURING LEVEL VARIATION IN CHARGED PARTICLE BEAM SYSTEM
A sensor may be used to measure a degree of tilt of a sample. The sensor may include an apparatus having a light source, first, second, and third optical elements, a lens, and an aperture. The first optical element may supply light from the light source toward the sample, and may supply light input into the first optical element from the sample toward the second optical element. The second optical element may supply light toward first and second sensing elements. An aperture may be arranged on a focal plane of the lens. A light beam incident on the first sensing element may be a reference beam.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
18.
CHARGED PARTICLE BEAM APPARATUS WITH MULTIPLE DETECTORS AND METHODS FOR IMAGING
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.
A substrate support (1) configured to support a substrate. The substrate support comprises a main body (10) having a first side configured to support the substrate, and a second side opposite to the first side. The second side is formed with a plurality of grooves. The plurality of grooves includes a plurality of channels (50) and a plurality of conduits (60). The plurality of channels comprises a first channel (51) and a second channel (52) substantially surrounding the first channel. The plurality of conduits includes at least one first conduit (61) and at least one second conduit (62). The first channel is in fluid communication with the at least one first conduit, and the at least one first conduit extends towards the periphery of the substrate support, and the second channel is in fluid communication with the at least one second conduit, and the at least one second conduit extends towards the periphery of the substrate support.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A method of lithography simulation comprising: obtaining a lower order component of a mask 3D (M3D) mask image that corresponds to a mask pattern; generating a higher order component of the M3D mask image by using a machine learning (ML) model provided with input corresponding to the mask pattern; and combining the lower order component and the higher order component of the M3D mask image to generate a resultant M3D mask image corresponding to the mask pattern.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
21.
A MULTIPLE-DEVICE TRAINING FLOW TO REDUCE THE TIME-TO-RECIPE FOR COMPUTATIONAL GUIDED INSPECTION
A method to train a computational defect probability model to guide inspection using an inspection tool is disclosed. More particularly, a method of combining input data from multiple devices, correlating metrology data and defect data from devices processed according to a same device fabrication technology to train a computational defect probability, as well as applying a trained computational defect probability model for guided inspection is disclosed. A computational defect probability prediction model is disclosed to generate defective die probability estimates in shorter time with improved accuracy and versatility to guide inspection.
A reference grating for a semiconductor metrology system is described. The reference grating has a changeable pitch, which is changed to match the pitch of a metrology target in a semiconductor wafer. The reference grating is configured to receive radiation simultaneously with the target grating, and a radiation sensor is configured to generate a metrology signal (e.g., an alignment signal) based on diffracted radiation received from the target grating and the reference grating. The reference grating comprises an actuator and a reflective grating mask. The reflective grating mask comprises various gratings with different layouts and/or pitches configured to match various different target gratings in the wafer. The actuator is configured to move the reflective grating mask such that the reference grating is in a physical position to receive the radiation from the radiation source simultaneously with the target grating; and diffract radiation back toward the radiation sensor.
An improved method and system for image alignment of an inspection image are disclosed. An improved method comprises acquiring an inspection image, acquiring a reference image corresponding to the inspection image, acquiring a target alignment between the inspection image and the reference image based on characteristics of the inspection image and the reference image, estimating an alignment parameter based on the target alignment, and applying the alignment parameter to a subsequent inspection image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of compensating for focus deviations on a substrate having a plurality of layers present thereon, the method includes generating a focus prediction map for the substrate. In one approach, the focus prediction map is generated by obtaining key performance indicator data on the substrate using an alignment sensor, determining a correlation between the KPI data and focus offset data for positions on the substrate, and using the correlation and the KPI data, generating a focus prediction map for the substrate. In another approach, the prediction map is generated by obtaining a first layer height map for a first layer, measuring, with a level sensor, a second layer height map for a second layer overlying the first layer, and subtracting the first height map from the second height map to obtain a delta height map for the substrate.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
25.
METHOD OF OPTIMIZING A WEIGHTING FOR PARAMETER OF INTEREST DATA AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES
Disclosed is a method of optimizing a weighting for parameter of interest data. The method comprises obtaining parameter of interest data and reference data relating to a lithographic process, optimizing the weighting such that application of the weighting to said parameter of interest data improves performance of said lithographic process in terms of the reference parameter; and constraining the optimization so as to penalize changes in an average of reference data.
System for in-situ cleaning of a clamp of a lithography apparatus, comprising: a body configured to be inserted into the lithography apparatus and engaged with a clamp, wherein cleaning features are arranged on a clamp facing surface of the body; a movement system of the clamp; and a control system; wherein the control system is configured to: control the clamp to use a first clamping force to engage the body with the clamp; control the movement system to move the clamp in an oscillatory movement with the first clamping force applied, wherein the first clamping force substantially prevents relative movement between the cleaning features and the clamp; and control the clamp to change the first clamping force to a second clamping force, the second clamping force being weaker than the first clamping force, so that relative movement between the cleaning features and clamp occurs in response to the oscillatory movement.
A sensor apparatus can include a transient optical pattern, a probe beam, and a detector. The transient optical pattern can be configured to induce a material change in an alignment mark thereby forming an effective alignment mark. The probe beam can be configured to interact with the effective alignment mark. The detector can be configured to measure diffracted light from the effective alignment mark generated by the probe beam. Advantageously the sensor apparatus can induce a transient change in a refractive index of the alignment mark with visible light, detect sub-wavelength features of the alignment mark, measure asymmetry of the alignment mark, and increase a resolution of the sensor apparatus by at least a factor of 4.
The disclosure provides a method of determining a set of machine constants used for a process and/or apparatus and/or a model of interest related to the process and/or apparatus; the method comprising: obtaining process data relating to said process and/or apparatus; obtaining a set of optimization ranges, comprising a respective optimization range calibrated for each machine constant of said set of machine constants; and optimizing said set of machine constants within said set of optimization ranges based on said process data.
A fluid handling system comprising a fluid handling structure configured to at least partly confine a liquid to an immersion space between a final element and a substrate, wherein the fluid handling structure comprises: a plurality of gas knife compartments and a plurality of gas supply compartments, wherein the flow of gas to each of the gas knife compartment and gas supply compartment is individually controllable by a respective variable flow valve.
Systems and methods of inspecting a sample using a charged-particle beam apparatus with enhanced probe current and high current density of the primary charged-particle beam are disclosed. The apparatus includes a charged-particle source, a first condenser lens configured to condense the primary charged-particle beam and operable in a first mode and a second mode, wherein: in the first mode, the first condenser lens is configured to condense the primary charged-particle beam, and in the second mode, the first condenser lens is configured to condense the primary charged-particle beam sufficiently to form a crossover along the primary optical axis. The apparatus further includes a second condenser lens configured to adjust a first beam current of the primary charged-particle beam in the first mode and adjust a second beam current of the primary charged-particle beam in the second mode, the second beam current being larger than the first beam current.
An aperture for detecting a laser beam misalignment, the aperture comprising: a body including a first opening and defining a first axis; a beam dump; an optical element including a second opening wherein the first opening and the second opening are coaxial with the first axis, the optical element being configured to redirect a misaligned laser beam to a detector or to split a misaligned laser beam into at least two sub-beams; a laser beam detection system configured to detect laser light, wherein the optical element is configured to direct a first sub-beam to the beam dump, and to direct a second sub-beam to the laser beam detection system. Also described is an aperture including an enclosure, a method of detecting misalignment of a laser beam, a radiation source comprising such an aperture, a lithographic apparatus comprising such a radiation source or aperture, and the use of the same in a lithographic apparatus or method.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The embodiments of the present disclosure provide a sensor substrate for a charged particle optical device and/or a charged particle assessment apparatus, the sensor substrate comprising: at least one distance sensor configured to generate a measurement signal representative of a distance between the distance sensor and a facing surface of a target; and at least one charged particle optical component.
A method of operating a lithographic apparatus that comprises: a projection system configured to provide exposure radiation for patterning a substrate underneath the projection system; a first stage configured to support a first substrate; a second stage configured to support a second substrate; and a third stage accommodating a component that includes at least one of a sensor and a cleaning device; wherein the method comprises starting a pre-exposure scrum sweep operation after starting a substrate exchange operation; wherein during the pre-exposure scrum sweep operation, the third stage moves away from underneath the projection system while the second stage moves to underneath the projection system; wherein during the substrate exchange operation, the first substrate is unloaded from the first stage.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A substrate height measuring apparatus comprising a cantilever extending from a body and having a generally spherical tip provided at a distal end, wherein the generally spherical tip and the cantilever have a conductive coating; a modulation system configured to apply a periodic position modulation to a substrate table; a voltage source configured to apply a DC voltage and a periodic voltage modulation to the cantilever and generally spherical tip; an interferometric detection system configured to measure movement of the cantilever whilst the position modulation and the voltage modulation are being applied; a lock-in detection system configured to receive a signal from the interferometric detection system and provide an output signal indicative of hydrodynamic force acting upon the cantilever and an output signal indicative of electrostatic force acting upon the cantilever; and a processor configured to provide a substrate height measurement based upon the output signals.
G01B 5/06 - Measuring arrangements characterised by the use of mechanical techniques for measuring length, width, or thickness for measuring thickness
G01B 5/20 - Measuring arrangements characterised by the use of mechanical techniques for measuring contours or curvatures
G01B 5/207 - Measuring arrangements characterised by the use of mechanical techniques for measuring contours or curvatures using a plurality of fixed, simultaneously operating transducers
G01B 7/06 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width, or thickness for measuring thickness
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01Q 20/02 - Monitoring the movement or position of the probe by optical means
G01Q 60/00 - Particular types of SPM [Scanning-Probe Microscopy] or apparatus thereforEssential components thereof
G01Q 90/00 - Scanning-probe techniques or apparatus not otherwise provided for
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
35.
AN OPTICAL ARRANGEMENT FOR USE IN AN EXPOSURE APPARATUS
Disclosed is an optical arrangement for use in an exposure apparatus, comprising: an object table assembly configured to hold and move an object in a plane of the object; and an optical scanning assembly configured to receive a radiation beam, direct the radiation beam towards the object so as to illuminate at least an area of the object in the plane of the object, and subsequently collect at least part of the radiation beam coming from the object; wherein the object table assembly and at least a part of the optical scanning assembly are operable to move concurrently while the object is being illuminated by the radiation beam such that the optical scanning assembly moves the radiation beam in a direction substantially anti-parallel to a direction of movement of the object table assembly thereby scanning the radiation beam over at least a portion of said object.
Systems and methods for inspecting a sample. Systems and methods may include determining a plurality of locations on the sample, each location corresponding to an inspection feature on the sample in a field of view (FOV); providing one or more charged particle beams to the sample, each charged particle beam being provided to a corresponding location of the plurality of locations; detecting, for each location, one or more particle emissions resulting from the charging of the corresponding location; and determining, for each location, defect information of the sample based on the one or more detected particle emissions.
A system and method for aberration detection in charged particle beam systems such as scanning electron microscopes. The method uses spatial information of the incidence locations of charged particle arrival events on a detector surface to determine characteristics of the incident beam on a sample. By irradiating a flat, open surface area on a sample, beam parameters such as beam tilt, 5 defocus, spherical aberration, chromatic aberration, coma, diffraction error, astigmatism, field curvature, distortion and others may have an identifiable relationship with the resulting spatial distribution that may be used to identify and correct beam aberrations.
A sensor for measuring energy of EUV radiation from combined radiation comprising EUV radiation and non-EUV radiation, the sensor (20) comprising: a radiation absorber (21) configured to absorb radiation derived from the combined radiation (15) via a surface (40) of the radiation absorber; a first reflector (30;31) having a first reflectivity to EUV radiation configured to modify the combined radiation entering the surface; a second reflector (30;32) having a second reflectivity to EUV radiation configured to modify the combined radiation entering the surface, the second reflectivity being different from the first reflectivity; a thermometer (26) configured to measure a temperature change of the radiation absorber; and a calculator configured to calculate the energy of EUV radiation based on a first temperature change associated with the combined radiation modified by the first reflector and a second temperature change associated with the combined radiation modified by the second reflector.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
39.
COMPENSATING OPTICAL SYSTEM FOR NONUNIFORM SURFACES, A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
A system includes a radiation source, an optical system, an optical element, a detection system, and a processor. The radiation source is configured to generate a radiation beam. The optical system is configured to direct the radiation beam toward a target structure and to receive the scattered radiation. The target structure is configured to produce scattered radiation comprising one or more scattered beams. The optical element is configured to control a position of the one or more scattered beams. The detection system is configured to receive a portion of the position-controlled scattered radiation and to generate a detection signal. The processor is configured to determine a property of the target structure based on at least the detection signal.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
40.
METHODS OF DETERMINING A MECHANICAL PROPERTY OF A LAYER APPLIED TO A SUBSTRATE, AND ASSOCIATED DEVICES
A method for determining a mechanical property of a layer applied to a substrate. The method includes obtaining input data including metrology data relating to the layer and layout data relating to a layout of a pattern to be applied in the layer. A first model or first model term is used to determine a global mechanical property related to the layer based on at least the input data; and at least one second model or at least one second model term is used to predict a mechanical property distribution or associated overlay map based on the first mechanical property and the layout data, the mechanical property distribution describing the mechanical property variation over the layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
41.
IDENTIFYING DEVIATING MODULES FROM A REFERENCE POPULATION FOR MACHINE DIAGNOSTICS
A fault in a subject production apparatus which is suspected of being a deviating machine, is identified based on whether it is possible to train a machine learning model to distinguish between first sensor data derived from the subject production apparatus, and second sensor data derived from one or more other production apparatuses which are assumed to be behaving normally. Thus, the discriminative ability of the machine learning model is used as an indicator to discriminate between a faulty machine and the population of healthy machines.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
42.
THERMAL CONTROL SYSTEMS, MODELS, AND MANUFACTURING PROCESSES IN LITHOGRAPHY
Dynamic aberration control in a semiconductor manufacturing process is described. In some embodiments, wavefront data representing a wavefront provided by an optical projection system of a semiconductor processing apparatus may be received. Wavefront drift may be determined based on a comparison of the wavefront data and target wavefront data. Based on the wavefront drift, one or more process parameters may be determined. The one or more process parameters include parameters associated with a thermal device, where the thermal device is configured to provide thermal energy to the optical projection system during operation.
G05B 19/4093 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by part programming, e.g. entry of geometrical information as taken from a technical drawing, combining this with machining and material information to obtain control information, named part programme, for the NC machine
43.
SYSTEMS AND METHODS FOR OPTIMIZING LITHOGRAPHIC DESIGN VARIABLES USING IMAGE-BASED FAILURE RATE MODEL
A method for determining values of design variables of a lithographic process based on a predicted failure rate for printing a target pattern on a substrate using a lithographic apparatus. The method includes obtaining an image corresponding to a target pattern to be printed on a substrate using a lithographic apparatus, wherein the image is generated based on a set of values of design variables of the lithographic apparatus or a lithographic process; determining image properties, the image properties representative of a pattern printed on the substrate, the pattern corresponding to the target pattern; predicting a failure rate in printing the pattern on the substrate based on the image properties; and determining a specified value of a specified design variable based on the failure rate, the specified value to be used in the lithographic process to print the target pattern on the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
44.
FLUID HANDLING STRUCTURE, LITHOGRAPHIC APPARATUS, METHOD OF CONTROLLING A FLUID HANDLING STRUCTURE, METHOD OF CONTROLLING A LITHOGRAPHIC APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Disclosed herein is a fluid handling structure for a lithographic apparatus, wherein the fluid handling structure is configured to at least partly confine a liquid to an immersion space between a final optical element of a projection system of the lithographic apparatus and a substrate onto which the projection system of the lithographic apparatus is configured to project a patterned beam, the fluid handling structure comprising: a plurality of channels configured to supply fluid towards the substrate and/or extract fluid away from the substrate; a flow adjuster configured to move relative to the channels so as to partially block the channels; an actuation device configured to move the flow adjuster relative to the channels; and a control system configured to control the actuation device so as to control partial blocking of the channels by the flow adjuster.
A system for generating extreme ultraviolet (EUV) radiation includes a source vessel having an interior volume, a source laser configured to generate light to enter the interior volume in an entering light direction along a light axis to provide energy to a target to cause the generation of EUV within the interior volume, and a heated gas delivery apparatus (336) within the interior volume configured to deliver heated gas into the interior volume and positioned on and extending along the light axis, the heated gas delivery apparatus having outlets to dispense the heated gas into the interior volume and one or more inlet openings to receive light from the source laser to heat the heated gas delivery apparatus. A process for providing EUV radiation is also disclosed.
Measuring overlay and alignment with a single system is described. Sensor output signals are generated based on diffracted radiation received from a metrology target having pads with different portions (e.g., gratings) in first and second metrology marks in first and second layers of a patterned substrate. Various sensor signals are combined for the realization of the joint detection of both overlay and alignment with said single system. Signal formation and related signal processing are described for gratings in the pads, for which a system of non-linear equations is derived from which overlay and alignment can be determined jointly (e.g., at the same time). Signal formation operations and the system of non-linear equations are configured to account for 4D aberrations associated with an imaging lens. An approach where 4D aberrations are taken into account enables the use of simpler optics as compared to prior systems, for example.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a computer implemented method of determining representative illumination profiles for performing a qualification action on an exposure apparatus. The method comprises obtaining aberration sensitivity data for a plurality of illumination profiles, said aberration sensitivity data describing the sensitivity of an exposure error metric with aberration associated with each respective different illumination profile of said plurality of illumination profiles; grouping said plurality of illumination profiles into one or more groups according to a similarity in their corresponding aberration sensitivity data; and determining a respective representative illumination profile for each of said groups.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
48.
SYSTEM AND METHOD FOR LOADING A SAMPLE TO A SAMPLE POSITION
The present invention provides a method of loading a sample to a sample position. The method comprises loading a sample, having an initial voltage, on to a sample handler; ramping up the voltage of the sample from the initial voltage to a predetermined voltage, while the sample is on the sample handler; when the sample is at the predetermined voltage, transferring the sample from the sample handler to a sample position of a sample holder, wherein the sample position of the sample holder is at the predetermined voltage; and processing the sample at the sample position.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
49.
APPARATUS AND METHOD FOR DETERMINING CRITICAL AREAS OF PATTERNED SUBSTRATE
A computer program product comprising a computer readable medium, having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least: generate a surface map of a surface of one or more investigation areas, based on obtained first scans of the one or more investigation areas of a substrate; calculate values of one or more key performance indicators (KPIs) of the surface map of each investigation area; and determine outlier investigation areas for investigation via a technique which generates second scans, wherein an outlier investigation area is one which has at least one KPI not within an acceptable predetermined range of values of the KPI.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
50.
SOURCE VESSEL, LIGHT SOURCE, EUV-UTILIZATION SYSTEM AND METHOD FOR CONTROLLING A SOURCE MATERIAL
There is provided a source vessel of a laser produced plasma source, the vessel including a collector region, and an intermediate focus (IF) region, wherein the vessel is configured to provide at least two different temperature zones wherein a temperature zone including the IF region is hotter than a temperature zone including the collector region. Also provided is a light source and an EUV-utilization system including such a source vessel. Also described is a method for controlling source material within a source vessel, and the use of such source vessel, light source, or EUV-utilization apparatus, or method in a lithographic method or system.
Disclosed is an apparatus for and method of using an in-system utility stage to provide service functions for wafer tables and other components in the photolithographic system in which the utility stage can access multiple tools without any need to open an enclosure containing the utility stage and the wafer tables and other components thus increasing throughput and decreasing downtime.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
53.
APPARATUS FOR SUPPLYING LIQUID TARGET MATERIAL TO A RADIATION SOURCE
The present invention relates to an apparatus for supplying a liquid target material to a radiation source, comprising a first reservoir, a pressurizing system configured to pressurize a hydraulic fluid, and a separating device configured to separate the hydraulic fluid from the liquid target material in the first reservoir and to transfer a pressure from the hydraulic fluid to the liquid target material. The invention also relates to an associated method of supplying liquid target material to a radiation source.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
54.
OBTAINING A PARAMETER CHARACTERIZING A FABRICATION PROCESS
A measurement process is performed for each of a plurality of locations on a product of a fabrication process at which a parameter of interest characterizing the fabrication process is believed to be nominally the same, to derive measured signals for each location including at least one image. A dimensional reduction method is applied to a dataset of the measured signals, to obtain components of the dataset, including components indicative of variation between the images. For at least one of these components, one or more associated ones of the measured signals are identified, comprising at least one set of corresponding pixels in the respective images for the plurality of locations. The contribution of the identified measured signals in the dataset is reduced or eliminated to obtain a processed signal, and the parameter of interest is obtained from the processed signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of calibrating a model for inferring a value for a parameter of interest from a measurement signal including obtaining a first set of metrology signals, corresponding known reference values for the parameter of interest; and at least first and second constraining sets of metrology signals relating to the same application as the first set of metrology signals. The first set of metrology signals and corresponding reference data is used to train at least one model to infer a value for the parameter of interest from the first set of metrology signals subject to a constraint that a difference between first inferred values for the parameter of interest using the model on at least the first constraining set of metrology signals and second inferred values for the parameter of interest using the model on the second constraining set of metrology signals is below a threshold value.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
56.
SYSTEMS AND METHODS FOR LITHOGRAPHIC TOOLS WITH INCREASED TOLERANCES
A method of use for a lithographic tool includes scanning a substrate relative to a first micro-lens array (MLA) and a second MLA each having rows of lenslets. The first MLA has functional lenslets and extra lenslets and the scanning includes delivering light through the lenslets of the first MLA and second MLA to the substrate. The delivering includes delivering light through the functional lenslets to form a pattern on the substrate, the pattern having gaps caused by a positional or rotational misalignment between the functional lenslets of the first MLA and the second MLA. The delivering also includes delivering light through the extra lenslets to fill the gaps in the pattern.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
57.
TRACK INTERFACE AND SUBSTRATE PROCESSING APPARATUS
A track interface for exchanging substrates between a track and a processing unit of a substrate handling apparatus is disclosed, comprising: first and second transfer units configured to transfer a substrate along respective first and second loading transfer paths from the track via one or more substrate track receiving stations to the processing unit and to transfer a substrate along respective first and second unloading transfer paths from the processing unit via one or more substrate track discharge stations to the track, wherein each of the one or more substrate track receiving stations is arranged to receive a substrate from the track and wherein each of the one or more substrate track discharge stations is arranged to discharge a substrate to the track, and wherein the first loading and unloading transfer paths are separated from the second loading and unloading transfer paths.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
There is provided a metrology apparatus for a lithographic system comprising: a plurality of independently movable fingers, configured to control a shape of an illuminated region of a patterning device, wherein one or more of the independently movable fingers comprise one or more reflective surfaces; and one or more radiation sensors; wherein the one or more reflective surfaces of the one or more independently moveable fingers are configured to reflect radiation towards the one or more radiation sensors.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
59.
STAGE AND TOOL FOR HETEROGENEOUS INTEGRATION OF VARIABLY SIZED DIE
A support structure for die comprising: an array of attachment connections configured to hold die actuators, each of the die actuators held by at least one attachment connection; and an array of controller connections configured to interface with die actuators to control movement of the die actuators, wherein the array of controller connections is interspersed in the array of attachment connections. And a system for die positioning comprising a first stage supporting an array of die actuators; a second stage supporting a plurality of acceptor target dies; and a measurement system functionally coupled to at least one of the first stage and the second stage and configured to: position at least one of the first stage and the second stage such that a position of the first donor die corresponds to a position of the first acceptor target die.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A lithographic apparatus comprising an illumination system (IL) configured to direct a radiation beam onto a patterning device (MA) to generate a patterned radiation beam, the patterning device comprising a region to be obscured during exposure of a substrate (W), a support structure (WT) configured to support the substrate, a projection system (PS) configured to project the patterned radiation beam onto the substrate, and a masking device (MD), wherein at least a part of the masking device is configured to at least partially mask a part of the patterned radiation beam that is reflected by the region of the patterning device during exposure of the substrate, the part of the masking device (MD) being arranged between the projection system (PS) and the support structure (WT).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
61.
METROLOGY METHOD AND DATA PROCESSING METHOD APPLICABLE TO METROLOGY
Disclosed is a method of metrology comprising: obtaining metrology data relating to measurement of one or more structures on a substrate, said metrology data comprising a plurality of data elements, and wherein at least some of said data elements comprise complex values; selecting a respective signal type for each respective data element of said plurality of data elements or a subset thereof to obtain processed metrology data; and determining at least one parameter of interest from said processed metrology data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
62.
SYSTEM AND METHOD FOR EXPOSING A SUBSTRATE EDGE AND LITHOGRAPHIC APPARATUS INCLUDING THE SYSTEM
The present disclosure provides a system for substrate edge exposure, comprising a support table for supporting a substrate and having a centrally located opening, wherein the support table is configured to thermally condition the substrate; a rotatable support unit moveable in a vertical direction through the centrally located opening of the support table; a sensor configured to detect an edge of the substrate when supported by the rotatable support unit; and an exposure unit for exposing an edge of the substrate when supported by the rotatable support unit. The exposure unit may be located adjacent to the sensor. The exposure unit can be configured to move laterally relative to a planar surface of the substrate.
Systems and methods for defect inspection including defect detection and defect classification associated with a sample are disclosed. The method for defect inspection includes acquiring a scanned inspection image of a region of a wafer using a charged-particle beam system, and training a deep learning model based on a scanned reference image of the region of the wafer. The trained deep learning model is configured to detect a defect in the acquired scanned inspection image, after detection, extract one or more features of the detected defect, and classify the detected defect based on the one or more extracted features.
The invention relates to an electrostatic holder comprising: a body, and a clamping element attached to the body, said clamping element comprising an electrode for applying an attractive force between the clamping element and a first to be clamped object, wherein an outer edge of the body is configured to provide a gap between the outer edge of the body and the first to be clamped object, which gap is configured for outputting a fluid for reducing dust particles reaching the first to be clamped object or a second to be clamped object on an opposite side of the holder.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
65.
METHODS AND SYSTEMS TO CALIBRATE RETICLE THERMAL EFFECTS
A method of reducing effects of heating and/or cooling a reticle in a lithographic process includes conditioning the reticle to adjust an initial temperature of the reticle to a predetermined temperature, reducing stress in the reticle to reduce parasitic thermal effects, calibrating a reticle heating model by exposing the reticle and a non-production substrate to a dose of radiation, and processing a production substrate by exposing the reticle and a production substrate to a dose of radiation based on the reticle heating model. The method can increase calibration accuracy and speed of the reticle heating model, reduce conditioning times of the reticle, reduce stress in the reticle, avoid rework of production substrates, and increase throughput, yield, and accuracy.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
66.
SYSTEMS AND METHODS FOR REDUCING PATTERN SHIFT IN A LITHOGRAPHIC APPARATUS
A method for improving imaging of a feature on a mask to a substrate during scanning operation of a lithographic apparatus. The method includes obtaining a dynamic pupil representing evolution of an angular distribution of radiation exposing a mask during a scanning operation of a lithographic apparatus and determining a variation of shift of a feature at a substrate during the scanning operation due to interaction of the dynamic pupil with the mask. The method includes configuring a mask parameter and/or or a control parameter of the lithographic apparatus to reduce the variation of shift of the feature.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An optical assembly includes a bulb and a lens for a laser-operated light source. The bulb has a chamber for accommodating an ionizable gas and a plasma formed by energizing the ionizable gas and has a longitudinal axis and a transverse axis perpendicular to the longitudinal axis. In use, the lens is arranged to focus a wavefront of radiation from a laser to a virtual object point located inside the chamber. In use, the bulb is arranged to transmit and refract the wavefront of the radiation to a first real image point in a first cross-section of the longitudinal axis and a second real image point in a second cross-section of the transverse axis. The first real image point and the second real image point are image conjugates of the virtual object point. The virtual object point, the first real image point and the second real image point coincide.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01J 61/16 - Selection of substances for gas fillingsSpecified operating pressure or temperature having helium, argon, neon, krypton, or xenon as the principle constituent
A new polishing tool comprises: a main support member; a polishing head support member; a first drive mechanism; and a second drive mechanism. The polishing head support member is coupled to the main support member such that the polishing head support member is linearly movable relative to the main support member in a first direction and a second direction that is different to the first direction. The first and second directions may be mutually orthogonal. The first drive mechanism is operable to move the polishing head support member relative to the main support member in the first direction. The second drive mechanism operable to move the polishing head support member relative to the main support member in the second direction. The new polishing head uses linear actuators rather than a rotary motor and, as a result, is advantageous over known polishing tools.
B24B 41/047 - Grinding heads for working on plane surfaces
B24B 7/07 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor involving a stationary work-table
B24B 7/24 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
69.
AN ILLUMINATION CONFIGURATION MODULE FOR A METROLOGY DEVICE
Disclosed is a radiation modulation device being operable to receive spectrally dispersed broadband input radiation and to selectively transmit, diffract, or reflect at least part of the spectrally dispersed broadband input radiation to obtain spectrally configured radiation, wherein the radiation modulation device comprises a plurality of individually configurable elements each comprising at least one configurable grating structure; and wherein each of the individually configurable elements is operable to controllably modulate a respective portion of the spectrally dispersed broadband input radiation by actuation on the at least one configurable grating structure in a direction comprising at least a directional component parallel to the direction of periodicity of the at least one configurable grating structure so as to obtain spectrally configured radiation.
LITHOGRAPHIC APPARATUS, UNIFORMITY SENSOR FOR USE THEREIN WITH A PLURALITY OF SENSING ELEMENTS, METHOD OF DETERMINING A PROPERTY OF A RADIATION BEAM AND METHOD OF DETERMINING A CALIBRATION FOR AN OPTICAL ELEMENT OF A LITHOGRAPHIC SYSTEM
Described herein there is a method of determining a property of a radiation beam within a lithographic system. The method comprises, for each one of a plurality of sections of the radiation beam having different positions in a first direction, measuring a plurality of intensities. Each one of the plurality of intensities is measured using a different one of a plurality of sensing elements of a sensor. Each one of the plurality of intensities corresponds to a different one of a plurality of portions of the radiation beam having different positions in a second direction. The plurality of portions of the radiation beam correspond to the entire section of the radiation beam. The method further comprises determining the property of the radiation beam using at least one of the plurality of measured intensities for at least one of the plurality of sections of the radiation beam.
Systems, apparatuses, and methods for reducing vibration of a chamber may include obtaining predefined motion data associated with a transferring device stiffly coupled to a chamber; determining movement of the transferring device based on the predefined motion data before the transferring device moves; determining, based on the movement, a first force to be applied to the chamber caused by the movement; and causing a support device of the chamber to apply a second force to the chamber to counteract the first force when the transferring device moves.
Systems and structures for venting and flow conditioning operations in charged particle beam systems. In some embodiments, a system may include a chamber configured to provide a vacuum environment; a vent valve; and a mass flow controller coupled to the chamber on a first side of the mass flow controller and to the vent valve on a second side of the mass flow controller.
A method and system for designing a mark for use in imaging of a pattern on a substrate using a lithographic process in a lithographic apparatus. The method includes obtaining a mark construction, obtaining a spatial variation of a geometric parameter associated with the mark construction, and determining a geometry design of individual patterns of a mark based on the spatial variation and a spatial location of the mark.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged particle device projects charged-particle beams along beampaths towards a sample location. The device comprises: a charged-particle lens assembly for manipulating the beams and a controller. The lens assembly comprises plates each having an aperture array for passage of beampaths. The plates are at different plate locations along the beampaths. The controller controls the charged-particle device such that charged particles of the beams have different energy values at the different plate locations along the beampaths. The lens assembly comprises a corrector comprising an individual correctors configured to perform aberration correction at respective apertures independently of each other. The corrector is associated with the plate at the plate location at which the energy value is smallest, the strength of an electric field adjacent to the plate is greatest and/or a ratio of the energy value to strength of an electric field adjacent to the plate is smallest.
Disclosed is a method of determining a complex-valued field relating to a structure, comprising: obtaining image data relating to a series of images of the structure, for which at least one measurement parameter is varied over the series and obtaining a trained network operable to map a series of images to a corresponding complex-valued field. The method comprises inputting the image data into said trained network and non-iteratively determining the complex-valued field relating to the structure as the output of the trained network. A method of training the trained network is also disclosed.
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/956 - Inspecting patterns on the surface of objects
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
76.
OBJECT HOLDER, OBJECT TABLE, METHOD OF CONTROLLING THE SHAPE OF A SURFACE, METHOD OF MANUFACTURING THE OBJECT HOLDER, AND THEIR USE IN A LITHOGRAPHIC METHOD OR APPARATUS
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Poiesz, Thomas
Abstract
There is provided an object holder configured to support an object, the object holder comprising a support surface having a plurality of support elements, wherein the plurality of support elements comprise a reversibly changeable crystalline/amorphous phase material configured to provide a selectively changeable height of individual support elements. Also provided is an object table comprising such an object holder, An apparatus for controlling the flatness of a surface comprising such an object holder, a lithographic apparatus or tool comprising such an object holder, a method of controlling the shape of a surface, a method of manufacturing an object holder, and the use of such apparatuses or method in a lithographic apparatus or process.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Van Rooij, René, Adrianus
Abstract
An electrostatic clamp arrangement comprising: a clamp member comprising a main body defining a plurality of clamp cells; wherein each clamp cell comprises: at least two raised support portions of the main body which define a recess between them; and an electrostatic sheet located in the recess, wherein the electrostatic sheet comprises an electrode and a dielectric layer; and an actuator mechanically coupled to said electrostatic sheet and configured to exert a force on said electrostatic sheet to move said electrostatic sheet relative to said raised support portions.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
78.
METHOD AND APPARATUS FOR IMPROVING ACCURACY OF SOFT X-RAY METROLOGY
A method for improving accuracy of SXR metrology, comprising: obtaining a first diffraction spectrum comprising a plurality of periodic discrete peaks and relating to a target structure having been illuminated with a first source spectrum; obtaining a second diffraction spectrum relating to said target structure having been illuminated with a second source spectrum, the second source spectrum being complementary to the first source spectrum; determining a first response spectrum of the target structure based on the first source spectrum and the first diffraction spectrum; determining a second response spectrum of the target structure on the second source spectrum and the second diffraction spectrum; combining the first response spectrum with the second response spectrum to construct an improved response spectrum having fewer gaps than the first response spectrum; and determining a property of interest of the target structure using the improved response spectrum.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
G02F 1/37 - Non-linear optics for second-harmonic generation
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
79.
OBJECT HOLDER, OBJECT TABLE, OPTICAL ELEMENT AND METHOD OF CONTROLLING THE FLATNESS OF A SURFACE, AND THEIR USE IN A LITHOGRAPHIC METHOD OR APPARATUS
There is provided an object holder configured to support an object, comprising a support surface having a plurality of support elements that comprise a metal-Si multilayer, metal-Ge multilayer, and/or a chromium nitride layer to provide a selectively changeable height of individual support elements via thermal treatment of the metal-Si multilayer, metal-Ge multilayer, and/or chromium nitride layer. Also provided is an object table comprising such an object holder, an apparatus for controlling the flatness of a surface comprising such an object holder, an optical element for a lithographic apparatus, an apparatus for controlling the flatness of a surface, a lithographic apparatus or tool comprising such an object holder, a method of controlling the shape of a surface, a method of manufacturing an object holder, a method of correcting the flatness of an object holder or optical element, and the use of such apparatuses or method in a lithographic apparatus or process.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
80.
PELLICLES AND MEMBRANES FOR USE IN A LITHOGRAPHIC APPARATUS
A method for forming a pellicle for use in a lithographic apparatus is disclosed. The method includes: providing a porous membrane formed from a first material; applying at least one layer of two-dimensional material to at least one side of the porous membrane; and applying a capping layer to the at least one layer of two-dimensional material on at least one side of the porous membrane such that the at least one layer of two-dimensional material is disposed between the or each capping layer and the porous membrane. The at least one layer of two-dimensional material may act to close the adjacent side of the porous membrane and to form a smoother and flatter exterior surface of the pellicle. Advantageously, this may allow the porous membrane to be protected from etching while reducing EUV flare, regardless of the material used for the capping layer.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
81.
METHOD OF IDENTIFYING SERVICE ACTIONS ON A MACHINE SUCH AS AN EXPOSURE APPARATUS
Disclosed is a computer implemented method of determining a service action history relating to a machine. The method comprises obtaining event data comprising events and/or observations relating to a machine over a time period and obtaining a plurality of candidate service actions. A process mining operation is performed to match and/or compare said event data and said plurality of candidate service actions. One or more of said plurality of candidate service actions is/are identified as being most likely to have been executed on the machine during said time period.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A metrology method comprises obtaining a first absolute position metric of a first structure in a first layer on a substrate and a second absolute position metric of a second structure in a second layer of the substrate; and determining from first absolute position metric and said second absolute position metric one or more of: an exposure induced first layer pattern displacement describing a displacement error of said first structure resultant from exposure of the structure, an exposure induced second layer pattern displacement describing a displacement error of said second structure resultant from exposure of the structure, a process induced first layer pattern displacement describing a displacement error of said first structure resultant from processing of the structure and/or an alignment error describing an error in alignment data used to align the second layer to the first layer.
The present disclosure relates to an electrostatic clamp arrangement comprising a clamp member comprising at least one electrode and a first electrically conductive layer; a mounting member, comprising a second electrically conductive layer, upon which the clamp member is mounted; and a dielectric layer sandwiched between the first and second electrically conductive layers.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
84.
PELLICLE MEMBRANE, PELLICLE, AND METHOD FOR MANUFACTURING THE SAME
There is provided a pellicle membrane for a lithographic apparatus, said membrane including a core comprising metal silicon carbon nitride. Also described is a pellicle comprising such a pellicle membrane as well as a lithographic apparatus including such a pellicle membrane or pellicle. Also provided is a method of manufacturing a pellicle membrane, the method comprising sputtering a metal silicide target and a silicon carbide target in a gas stream comprising nitrogen to form a metal silicon carbon nitride core, optionally wherein the metal is selected from one or more of niobium, molybdenum, titanium, tungsten, platinum, cobalt, tantalum, palladium, or vanadium. The use of such a pellicle membrane, pellicle, lithographic apparatus or method in a lithographic method or apparatus is described.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
85.
IN-VACUUM, IN-SITU WAFER TEMPERATURE MEASURING METHOD AND APPARATUS
An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a contactless temperature sensor for accurately measuring a temperature of a wafer without risk of contamination is disclosed. The charged particle beam apparatus may calibrate the contactless temperature sensor using a temperature adjustable calibration pad, and then use the calibrated contactless temperature sensor to determine a temperature of a sample with an accuracy of 0.01-0.1 °C. The charged particle beam apparatus may further optimize and adjust a thermal conditioning station based on the accurately measured sample temperature.
The invention provides a reluctance actuator configured to exert a substantially upward force on an object, that is displaceable by a mover of a positioning device in a horizontal direction, the reluctance actuator comprising: a first member configured to be connected to the object, a second member configured to be connected to the mover, the first and second member forming a magnetic flux path comprising a gap between the first member and the second member, a permanent magnet arranged in the magnetic flux path to generate a bias magnetic flux in the magnetic flux path, the bias magnetic flux causing a bias upward force on the first member and a coil configured to engage with either the first member or the second member and configured to, when energized, generate a variable magnetic flux in the magnetic flux path, the variable magnetic flux causing a variable force on the first member.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
87.
A SEALING SYSTEM AND A SYSTEM FOR SEALING AN OPENING IN A VACUUM SYSTEM
The present invention provides a sealing system. The system comprises at least a part of a vacuum chamber, in which an opening is defined, and a printed circuit board. The printed circuit board comprises a first part for exposing to an atmospheric environment, and a second part adjacent to the first part for exposing to a vacuum environment. The second part is configured to at least partially cover the opening in the vacuum chamber. The first part is configured to extend away from the opening for accommodating an interface.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A bearing comprises: a support and a plurality of bearing surfaces. The bearing surfaces are supported by the support and configured to at least partially define an aperture for receipt of a shaft, the aperture having a finite order of rotational symmetry about a centroid of the aperture. At least some of the bearing surfaces are configured so as to be independently displaceable relative to the support so as to allow a shaft received in the aperture to rotate about one or more axes of rotation orthogonal to a nominal axis of the shaft whilst substantially preventing rotation of the shaft about its nominal axis.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a method of metrology, comprising: obtaining metrology data relating to measurement of a target comprising at least a first grating in a first layer and a second grating in a second layer, wherein the first grating has a first chirped pitch starting with a first starting pitch and the second grating has a second chirped pitch starting with a second starting pitch, the first grating and second grating substantially overlapping, and the first chirped pitch and second chirped pitch being different, so as to generate at least one parameter of interest dependent Moire-pitch when measured. A parameter of interest is determined from said at least one parameter of interest dependent Moiré-pitch described in said metrology data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
90.
SYSTEM AND METHOD FOR SUBSTRATE ALIGNMENT, AND AN APPARATUS INCLUDING THE SYSTEM
The present disclosure provides a method of obtaining a substrate alignment image, comprising the steps of: arranging a substrate on a substrate stage, the substrate having at least a first marker at a respective first marker position; using an image sensor to acquire a first image of the substrate at a first position, the first position being at or near the first marker position; moving the substrate with respect to the image sensor or vice versa to a second position adjacent to the first position; determining a position error; using the image sensor to acquire a second image at the second position; correcting the second position of the second image using the position error; and stitching the second image to the first image taking into account the corrected second position of the second image, to provide a stitched image.
The disclosure provides a method of calibrating a substrate handler, the handler comprising: a first substrate support and a second substrate support, a first robot arm related to the first substate support, and a second robot arm related to the second substrate support, wherein the first substrate support is provided with a first sensor, the first sensor being an edge sensor for sensing an edge of a substrate, a second sensor arranged at a predetermined distance with respect to the second substrate support, the second sensor being an optical sensor, the method comprising the step of calibrating the first robot arm and the second robot arm with respect to the first substrate support and the second substrate support using the second sensor.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
92.
HOLLOW-CORE PHOTONIC CRYSTAL FIBER BASED BROADBAND RADIATION GENERATOR
A broadband radiation source device configured for generating broadband output radiation upon receiving substantially linearly polarized input radiation, the source device including: a hollow-core photonic crystal fiber; at least a first polarization element operable to impose a substantially circular or elliptical polarization on the input radiation prior to being received by the hollow-core photonic crystal fiber; and a second polarization element operable in combination with the first polarization element to impose a substantially elliptical polarization on the input radiation, wherein the second polarization element and the first polarization element are oriented such that the elliptical polarization compensates at least partially for birefringence of the hollow-core photonic crystal fiber.
G02F 1/365 - Non-linear optics in an optical waveguide structure
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
93.
METHOD OF MANUFACTURING AN ELECTRODE FOR AN OBJECT HOLDER
A method of manufacturing an electrode for an object holder, the method comprising forming at least two electrode portions on a first insulating layer, the at least two electrode portions being spaced from each other, forming at least one insulating portion on the first insulating layer between the at least two electrode portions such that the at least one insulating portion fills a space between the at least two electrode portions and the at least two electrode portions form a planar surface with the at least one insulating portion and bonding a second insulating layer to the planar surface.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
94.
ANTI-REFLECTIVE NANOSTRUCTURES FOR SEMICONDUCTOR LITHOGRAPHY, METROLOGY, AND INSPECTION SYSTEMS
Anti-reflective nanostructures for semiconductor lithography, metrology, and inspection systems are described. A surface structing process that utilizes short (e.g., femtosecond) laser pulses to create the anti-reflective nanostructures is also described. Short laser pulses are used to remove material from one or more surfaces of a semiconductor lithography, metrology, and/or inspection system. These short laser pulses reduce heat-affected zones on a surface, and debris and remelting in a processed area. This results in the formation of high precision anti-reflective nanostructures, with little to no subsurface damage. This technique is a reliable and cost efficient means of mass producing of anti-reflective surfaces. Surfaces of semiconductor lithography, metrology, and/or inspection systems that form antireflective nanostructures in this way improve optical module performance in lithography systems, and accuracy and efficiency in metrology and inspection systems, by attenuating and/or otherwise absorbing stray and/or unwanted light interaction with lithography, metrology, and/or inspection operations, among other advantages.
A computer-implemented method of predicting a response of an electromagnetic system to electromagnetic radiation from an illumination configuration. The system comprises an aberration element located in a radiation path which causes aberrations described by an aberration function to electromagnetic radiation transmitted along the radiation path, and an object at an object plane on the radiation path which interacts with the electromagnetic radiation. The method comprises various steps.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
96.
INTEGRATED PHOTONIC CHIP FOR INTERFERENCE BASED ALIGNMENT SENSING
A photonic integrated circuit (PIC) alignment sensor comprising: a plurality of apodized grating emitters, where each apodized grating emitter is configured to emit illumination of a particular wavelength range, where the plurality of apodized grating emitters are configured to illuminate a target; and a plurality of apodized grating detectors configured to receive diffracted illumination from the target, where each apodized grating detector is configured to detect illumination of a particular wavelength range; and at least one multi-mode interferometer used to interfere illumination from at least two of the plurality of apodized grating detectors; and a waveguide configured to propagate the interfered illumination from the at least one multi-mode interferometer to a detector.
An optical measurement mark for an imaging system comprising a reflective region configured to reflect incident radiation for the imaging system to form an image of the optical measurement mark. The optical measurement mark comprises a diffusive substructure configured to scatter the incident radiation for increasing an illumination of a numerical aperture of the imaging system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
A method for conditioning a reticle includes determining a target operating temperature of the reticle during use. The method includes controlling a temperature of the reticle to approximate the target operating temperature of the reticle during use. The method includes exposing the reticle to radiation to perform a manufacturing process.
A method of determining an overlay measurement of a substrate includes: injecting charge into a charge injection element of the substrate; determining a first capacitance of a first pair of elements and a second capacitance of a second pair of elements; and determining a capacitance ratio based on the first capacitance and the second capacitance. The overlay measurement may be determined based on the capacitance ratio, which may indicate an imbalance.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
100.
INSPECTION APPARATUS, POLARIZATION-MAINTAINING ROTATABLE BEAM DISPLACER, AND METHOD
An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source generates a beam of radiation. The optical system directs the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer including four reflective surfaces having a spatial arrangement. The beam displacer receives the beam along the optical axis, performs reflections of the beam so as to displace the optical axis of the beam, rotates to shift the displaced optical axis, and preserves polarization of the beam such that a polarization state of the beam along the deflected optical axis is invariant to the rotating based on the spatial arrangement of the four reflective surfaces. The detector receives the scattered radiation to generate a measurement signal based on the received scattered radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
