Disclosed herein is an multi-array lens configured in use to focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises: an entrance electrode; a focussing electrode and a support. The focusing electrode is down beam of the entrance electrode along a beamlet path and is configured to be at a potential different from the entrance electrode. The support is configured to support the focusing electrode relative to the entrance electrode. The focusing electrode and support are configured so that in operation the lens generates a rotationally symmetrical field around the beamlet path.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
A method of monitoring the performance of an immersion lithographic apparatus, the method comprising: moving a test substrate relative to a liquid confinement structure through a series of test route portions whilst projecting exposure radiation through an immersion liquid onto a photosensitive layer on the test substrate such that the photosensitive layer is exposed; wherein the series of test route portions include a first test route portion and a second test route portion; and the second test route portion is symmetric to the first test route portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed herein is a surface member for removable application to cover at least a part of a surface of an immersion lithographic apparatus. The surface member has two major orthogonal dimensions and comprises: a first layer comprising an adhesive configured to adhere the surface member to the surface of the immersion lithographic apparatus; a second layer disposed on the first layer; a third layer disposed on the second layer; a fourth layer disposed on the third layer; and a fifth layer disposed on the fourth layer. The third layer comprises an adhesive configured to adhere the second layer to the fourth layer. At least the second layer is patterned so as to tune stiffness of the surface member in at least one of magnitude and directionality.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Metrology systems and methods are described. In these systems and methods, one or more metasurfaces are used to correct aberrations caused by optical element(s) (e.g., lenses, beam splitters, mirrors, refractive or diffractive optical components, etc.). A metasurface (also known as a metalens) is a relatively thin 2D planar surface array of structures configured to modify the trajectory, amplitude, phase, polarization, and/or other characteristics of an incident beam. The one or more metasurfaces are configured to replace one or more refractive elements, diffractive elements, and/or a moving stage, for example, previously used for aberration correction in prior metrology systems. This makes the present metrology systems more compact, lighter, and cheaper than prior systems, among other advantages.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
5.
MULTI CORE WAVEGUIDES FOR SEMICONDUCTOR METROLOGY SYSTEMS AND METHODS
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
STICHTING VU (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Goorden, Sebastianus, Adrianus
Sokolov, Sergei
Heinisch, Jan-Brian, Mi-Yu
Huisman, Simon, Reinald
Abrashitova, Ksenia
Amitonova, Liubov, Vladimirovna
Abstract
Multi core waveguides such as fibers for semiconductor metrology systems and methods are described. The multi core waveguides are configured to conduct the radiation from a radiation source to a structure such as a metrology target in one or more layers of a patterned substrate, and the diffracted and/or reflected radiation from the metrology target to a radiation sensor. The multi core waveguides have a length configured to facilitate placement of the radiation source and/or the radiation sensor in a spaced location relative to the patterned substrate. The length of the multi core waveguides is configured to provide increased functional space for other components of a metrology system located proximate to the patterned substrate (e.g., various lenses and/or other optical components).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
Disclosed is a method of identifying a source of a reconstruction error relating to reconstruction of a plurality of model parameters describing a structure on a substrate formed in a lithographic process. The method comprises: obtaining model parameters describing a nominal profile for describing said structure; obtaining metrology data relating to a measurement of said structure; determining simulated data, from a simulation of the measurement of said structure described in accordance with said model parameters; determining a spatially resolved sensitivity metric describing a sensitivity of a cost function to at least one property and/or function of said structure, said cost function comparing the metrology data and simulated data; and identifying a source of a reconstruction error from said spatially resolved sensitivity metric.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
7.
METHOD OF DETERMINING A SAMPLING SCHEME AND ASSOCIATED METROLOGY METHOD
Disclosed is a method of determining a sampling scheme for measuring at least one substrate or a portion thereof, the substrate being subject to a lithographic process to expose structures thereon using a lithographic apparatus comprising a measurement station for measuring the substrate and an exposure station for performing exposures on the substrate. The method comprises determining a correlation between measurement actions on said measurement station and exposed portions of said at least one substrate; determining an expected variability of a parameter of interest related to the lithographic process from said correlation; and determining the sampling scheme from said expected variability.
An actuator assembly including a first piezo actuator and a second piezo actuator. The piezo actuator has a correction unit configured to determine an output voltage difference representing a difference between a voltage at the output terminal of the first piezo actuator and a voltage at the output terminal of the second piezo actuator, and a first power correction for correcting the first power signal and/or a second power correction for correcting the second power signal, based on the output voltage difference.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02N 2/02 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing linear motion, e.g. actuatorsLinear positioners
Reticle stage short-stroke devices can be made of a cordierite body. The cordierite body is polished and then a silicon dioxide coating or a ultra-low expansion (ULE) glass layer is deposited. After thinning and polishing the deposited layer, an optic is positioned on the layer. The optic can be made out of Zerodur® and forms an optical contact with the silicon dioxide or ULE glass layer. The optic then holds the reticle clamp as well as encoder scales and fiducials.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
10.
COOLING AND MECHANICAL STRUCTURE FOR A DISTRIBUTED WOUND POLY-PHASE FORCER
A cooling system for a linear actuator is described. The cooling system includes an iron core having multiple slots, wound electrical coils of a particular design shape, and cooling plates. Each electrical coil is shaped the same and in a ring configuration that has two opposite sides of the ring configured to fit into two different slots of the iron core. Each cooling plate may be shaped to mirror at least part of the contour of a coil to fit into at least one slot of the iron core. The particular design of the coils and cooling plates allows them to be stacked into multiple slots of the iron core such that there are no volume conflicts with each other.
H02K 3/12 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors arranged in slots
H02K 3/24 - Windings characterised by the conductor shape, form or construction, e.g. with bar conductors with channels or ducts for cooling medium between the conductors
The present invention provides an electron-beam imaging system comprising an electron-beam source for generating a primary beam, an optical system for directing and focusing the primary beam onto a sample, and a charge detector for collecting interaction products. The charge detector comprises: a current detection electrode configured to connect to current measurement circuitry, a low atomic mass region comprising a low atomic mass material, and a high atomic mass region comprising a high atomic mass material. The high atomic mass material has a higher atomic mass than the low atomic mass material. The electron-beam imaging system is configured such that during use the low atomic mass region is closer to the sample compared to the high atomic mass region for reducing a second- generation interaction products yield at the charge detector.
Wavefront measurement for multi core optical fibers is described. A multi core optical fiber is configured to conduct radiation from a radiation source to a structure such as a metrology target in one or more layers of a patterned substrate, and diffracted and/or reflected radiation from the metrology target to a radiation sensor. The multi core optical fiber has a length configured to facilitate placement of the radiation source and/or the radiation sensor in a spaced location relative to the patterned substrate. Optical path length differences between a subset of cores in the multi core optical fiber with reflectors are determined for different wavelengths of radiation from the radiation source. The optical path length differences are determined based on path lengths of reflected radiation that impinges on the radiation sensor after passing back through the subset of cores. The optical path length differences indicate wavefront distortion.
Described herein are systems and methods for providing output radiation, the systems and methods comprising broadening and/or temporally shortening radiation to produce the output radiation. The systems and methods may comprise broadening and/or temporally shortening two radiation beams having different wavelengths, for example a pump radiation beam and a converted (e.g. second harmonic) radiation beam.
Systems and methods of reducing SEM image distortion using feed-forward control for thermal drift correction are disclosed. The system may include a charged-particle beam apparatus comprising a charged-particle source configured to emit charged particles, a plurality of charged-particle beam deflectors configured to influence a path of a primary charged-particle beam formed from the emitted charged particles, and one or more processors configured to execute a set of instructions to cause the charged-particle beam apparatus to perform operations comprising: obtaining information associated with thermal drift of a sample stage, determining a thermal drift of the sample stage at an image acquisition location of the sample based on the obtained information, and applying a control signal to at least one of the plurality of charged-particle beam deflectors to compensate the determined thermal drift of the sample stage.
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
15.
MAGNETIC LEVITATION POSITIONER ASSEMBLY FOR USE IN A LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS THEREWITH, METHOD OF OPERATING THE ASSEMBLY AND METHOD OF MANUFACTURING DEVICES COMPRISING THE METHOD OF OPERATING OR USING THE APPARATUS
An assembly for use in a lithographic apparatus, the assembly comprising: a thermal conditioning plate; a plurality of superconducting coils for magnetically levitating and linearly displacing a stage thereon, wherein the plurality of superconducting coils is in thermal contact with the thermal conditioning plate; wherein: the thermal conditioning plate comprises a first internal passage for containing a first cryogen, and a second internal passage for containing a second cryogen; and the first and second internal passages are thermally coupled to each other and are fluidly isolated from each other, so as to enable heat transfer between the first and second cryogens while fluidly isolating the first and second cryogens from each other.
Systems and methods for training a machine learning model to classify defects with utility-function-based active learning are described. In one embodiment, one or more non-transitory, machine-readable mediums are configured to cause a processor to at least determine a utility function value for unclassified measurement images, based on a machine learning model, wherein the machine learning model is trained using a pool of labeled measurement images. Based on a determination that the utility function value for a given unclassified measurement image is less than a threshold value, the unclassified measurement image is output for classification without the use of the machine learning model. The unclassified measurement images classified via the classification without the use of the machine learning model are added to the pool of labeled measurement images. The machine learning model is trained based on the measurement images classified via the classification without the use of the machine learning model.
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
A controller system is configured to control a plant and comprising a feedforward controller to provide, based on a reference state signal, a feedforward signal to the plant, and a feedback controller system to provide a feedback signal to the plant, based on a difference between the reference state signal and a plant state signal representing an actual state of the plant. The feedback controller system comprises an integrator, a trajectory generator, and a selector. The feedback controller system is configured to operate as a function of the reference state in a first control mode or a second control mode, wherein the feedback controller system, in the first control mode, operates the selector to select the trajectory generator output signal generated by the trajectory generator, and wherein the feedback controller system, in the second control mode, operates the selector to select the integrator output signal generated by the integrator.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
An assessment method comprising: using an assessment apparatus to generate assessment signals representing a property of a surface of a sample; processing the assessment signals to identify candidate defects and outputting a candidate defect signal; monitoring the status of the assessment apparatus for error conditions and generating a status signal indicating any error conditions during functioning of the assessment apparatus; and analysing the candidate defect signal to determine if the candidate defects are real defects; wherein analysis of a candidate defect is not completed if the status signal indicates that the assessment signal(s) and/or the candidate defect signal corresponding to the candidate defect would have been affected by an error condition.
A broadband light source assembly, a metrology apparatus and a method of generating broadband radiation have been disclosed. The broad light source comprises a femtosecond pump laser arranged to emit pulses of radiation, wherein the pulses of radiation have an energy per pump pulse of greater than 50 nJ; and comprises an all-normal dispersion optical fiber arranged to receive the pulses of radiation.
A charged particle-optical device configured to assess a sample, the charged particle-optical device comprising: an emitter configured to emit a beam of charged particles along a beam path; a chopper configured to chop the beam into pulses; a compressor configured to compress the pulses into compressed pulses, wherein the charged particle-optical device is configured to direct the compressed pulses along the beam path onto a sample location; and a detector configured to detect signal charged particles from the sample location so as to assess a sample located at the sample location.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
21.
METHOD OF ASSESSING A SAMPLE, APPARATUS FOR ASSESSING A SAMPLE
The present disclosure relates to apparatus and methods for assessing samples using charged particles. In one arrangement, a degassing action is performed by exposing a target area of a sample with charged particles to stimulate degassing. A rate of degassing from the target area is measured during the degassing action. Initiation of an assessing of the sample is controlled based on a characteristic of the measured rate of degassing. The assessing of the sample comprising exposing the target area with charged particles and detecting signal charged particles from the target area.
G01N 7/16 - Analysing materials by measuring the pressure or volume of a gas or vapour by allowing the material to emit a gas or vapour, e.g. water vapour, and measuring a pressure or volume difference by heating the material
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
An optical apparatus for a reticle stage of a lithographic apparatus is disclosed. The optical apparatus comprises: a reflective optical element comprising a surface for exposure to radiation; at least two electrodes located at the surface; and a measurement system configured to measure one or more electrical characteristics of the reflective optical element between the at least two electrodes. Also disclosed is a method of measuring a degradation of a reflective optical element having a surface for exposure to radiation in a lithographic apparatus, the method comprising: providing at least two electrodes at the surface of the reflective optical element; and measuring one or more electrical characteristics of the reflective optical element between the at least two electrodes.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A radiation source, a metrology tool, a lithographic apparatus and a method of generating an acoustic mode in a gas medium are provided. The radiation spectrum configuration system comprising a hollow optical waveguide and one or more transducers. The hollow optical waveguide contains a gas medium. The one or more transducers are configured to generate an acoustic mode in the gas medium.
G02F 1/125 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
A method of refurbishing a substrate support, the substrate support comprising: a first surface, configured to support a substrate; and a second surface, opposite to the first surface. The method comprises: depositing a material on the second surface to form a coating layer which increases a thickness of the substrate support; and removing material from the first surface.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Assemblies and methods for wavelength calibration of radiation. The assembly comprises one or more spectrometers configured to measure a first radiation spectrum of the radiation. The assembly then measures a second radiation spectrum while a gas is present in a propagation path of the radiation. The gas has an absorption line that overlaps with at least one wavelength of the radiation. The assembly optionally further comprises a processor configured to determine a wavelength calibration of the one or more spectrometers based on a difference between the second radiation spectrum and the first radiation spectrum.
Described herein are machine learning based system, method, and non-transitory computer readable medium for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using a neural network to convert a two-dimensional image to a 3D image. In a method, the neural network is trained by supplying simulated images of a sample with varied parameters to model a real fabricated IC structure. The trained network generates a depth map from newly supplied images of a sample to predict defect location The depth map may be converted to a binary map to predict defect dimension and location that may be used to guide inspection of a sample using an inspection tool.
A supercontinuum radiation source including a pump laser arrangement for generating pump radiation and including a plurality of pump laser heads; a radiation combiner for combining the respective pump radiation from each pump laser head, and a non-linear fiber for receiving the pump radiation so as to excite a working medium within the non-linear fiber to generate supercontinuum radiation. Each pump laser head has dimensions no greater than 5 cm in any direction. Alternatively, or in addition the supercontinuum radiation source further includes a control arrangement for controlling the pump laser arrangement, the control arrangement configured for non-simultaneous emission of pulses from each pump laser head.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.
A measurement system (shearing interferometer) is for determining an aberration map for a projection system (for example within a lithographic apparatus). The measurement system comprises: a first patterning device positionable in an object plane of the projection system; a second patterning device positionable in an image plane of the projection system; and a radiation detector arranged to receive radiation from the second patterning device. The second patterning device has a variable pitch such that an angular separation between adjacent pairs of diffraction beams formed by the second patterning device is non-uniform. The pitch of the second patterning device may have an extremum value at a first position on the second patterning device and the pitch of the second patterning device may either increases or decreases as a function of distance from the first position.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Systems and methods for measuring an energy barrier of a transistor during fabrication of the transistor, including determining a photocurrent of a transistor for each of a plurality of photon energies; determining energy barriers based on photocurrents for each of a plurality of landing energies of the charged particle beam; and determining an energy barrier of the transistor based, wherein the energy barrier is a zero-voltage energy barrier or a substantially near zero-voltage energy barrier. Methods include irradiating a gate with a charged particle beam; irradiating underneath the gate with a photon beam; determining a secondary electron (SE) yield at each of a plurality of photon energies; and determining an energy barrier of the transistor.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or
H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32.
METHODOLOGY TO PREDICT A PART PER TRILLION FAILURE RATE
A method of predicting a part per trillion failure rate, and more particularly, a method of improving failure rate prediction by grouping features on a sample to drastically increase a number of features on a device or sample available for metrology and inspection is disclosed. A single-beam tool and a multi-beam tool may be used simultaneously to calibrate a computational model and leverage accurate part per trillion failure rate prediction for a sample.
A system includes an illumination system, an optical system, a detector system, and a processor. The illumination system directs a first illumination beam and a second illumination beam towards a target structure and a first reference beam towards the detector system. The optical system directs a first scattered beam and a second scattered beam from the target structure to a detector system. The detector system captures an interference pattern and outputs a measurement signal. The first scattered beam, the second scattered beam, and the first reference beam generate the interference pattern. The processor analyzes the measurement signal to determine a characteristic of the target structure.
A computer-implemented method is proposed for generating a spectral model representation of an electromagnetic element for use in determining an electromagnetic response to electromagnetic radiation interacting with the electromagnetic element. The spectral representation contains a two-dimensional array of elements corresponding to respective wave vectors, each of the wave vectors being defined by a (different) corresponding pair of wave numbers in two mutually transverse directions. The electromagnetic element is described geometrically as a plurality of slices stacked transverse to these directions, and each containing one or more polygons. The method comprises determining points along each of the polygon edges, a computes coefficient is computed based on an extent of the corresponding polygon edge in the transverse directions. Fourier components are generated in each of the transverse directions, for each of the wave vectors, by performing a Fast Fourier Transform, FFT, algorithm using the coefficients.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
35.
METHOD FOR DESIGNING A FOCUS TARGET FOR FOCUS METROLOGY
Disclosed is a method for designing a focus target for determining a focus setting of a lithographic apparatus used to form said target. The method comprises determining an initial target design, the initial target design being configure to enhance a mask 3D effect, resultant from the effect of three dimensional reticle features and an off-axis beam incidence on a reticle comprising target features arranged in accordance to said target design; modeling an exposure a target according to said initial target design and measurement of said target for at least a plurality of different focus settings; varying the target design based on said modeling so as to improve said target design in terms of at least one performance indicator; and determining a final target design based on said at least one performance indicator.
Methods and apparatus for assessing a charged particle beam are disclosed. In one arrangement, a plurality of images of a reference pattern on a sample is generated by scanning a charged particle beam over the reference pattern at each of a corresponding plurality of focus conditions and detecting signal charged particles emitted from the sample. At least an astigmatism characteristic of the beam is determined by analyzing the images.
A masking module for use in a lithographic apparatus, comprising a moveable masking blade configured to prevent part of a patterning device from being illuminated during operation of the lithographic apparatus. The masking module is configured to rotate the moveable masking blade about an axis substantially parallel to a plane in which the patterning device is held in the lithographic apparatus. The masking module may further comprise a support and a masking assembly, rotatable relative to the support. The masking assembly may comprise a moveable masking blade and an arm, extending from the moveable masking blade. The arm extends from the moveable masking blade in a first direction, and the masking assembly is rotatable relative to the support such that the moveable masking blade has at least a component of motion in a second direction, generally perpendicular to the first direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
38.
A METHOD OF SPECTRALLY CONFIGURING MEASUREMENT ILLUMINATION OF A METROLOGY TOOL AND ASSOCIATED APPARATUSES
Disclosed is a method of spectrally configuring measurement illumination of a metrology tool, the method comprising: projecting measurement radiation using said projection optical system to obtain projected measurement radiation; measuring a signal amplitude metric of said projected measurement radiation at a detector; determining a spectral shape of the projected measurement radiation from the signal amplitude metric; and spectrally configuring the measurement illumination before the projection optical system to adjust said spectral shape to match a desired spectral shape.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
A system for measuring the height of a resist-covered surface of a substrate, the system comprising a projection unit comprising at least one radiation source configured to emit radiation having a first wavelength and radiation having a second wavelength, the projection unit being configured to direct the radiation having the first and second wavelengths onto the resist covered surface of the substrate, the first wavelength being absorbed more by the resist than the second wavelength, a detection system configured to measure the radiation reflected from the substrate and resist in the first and second wavelengths, and a processor configured to process the measured first and second wavelength radiation to obtain a height map for the substrate, wherein the height map substantially compensates for thickness variation of the resist on the substrate.
A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a first image processing module to generate a processed image. The method may further include determining image quality characteristics of the processed image and determining whether the image quality characteristics of the processed image satisfy predetermined imaging criteria. The method may further include in response to the image quality characteristics of the processed image not satisfying the imaging criteria, updating a tuning condition of the charged-particle beam tool, acquiring an image of the portion of the sample using the charged-particle beam tool that has the updated tuning condition, and processing the acquired image using the first image processing module to enable the processed acquired image to satisfy the predetermined imaging criteria.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
41.
METHOD AND SYSTEM OF DEFECT DETECTION FOR INSPECTION SAMPLE BASED ON MACHINE LEARNING MODEL
Systems and methods for training a machine learning model for defect detection include obtaining training data including an inspection image of a fabricated integrated circuit (IC) and design layout data of the IC, and training a machine learning model using the training data. The machine learning model includes a first autoencoder and a second autoencoder. The first autoencoder includes a first encoder and a first decoder. The second autoencoder includes a second encoder and a second decoder. The second decoder is configured to obtain a first code outputted by the first encoder. The first decoder is configured to obtain a second code outputted by the second encoder.
A method of training a generator model comprising: using the generator model to generate the predictive data based on the first measured data, wherein the first measured data and the predictive data can be used to form images of the sample; pairing subsets of the first measured data with subsets of the predictive data, the subsets corresponding to locations within the images of the sample that can be formed from the first measured data and the predictive data; using a discriminator to evaluate a likelihood that the predictive data comes from a same data distribution as second measured data measured from a sample after an etching process; and training the generator model based on: correlation for the pairs corresponding to a same location relative to correlation for pairs corresponding to different locations, the correlation being the correlation between the paired subsets of data, and the likelihood evaluated by the discriminator.
Current substrate (e.g., semiconductor wafer) coupling (e.g., bonding) process control methodology uses measured substrate flatness and shape to control the coupling process. Current equipment configurations and coupling processes introduce high substrate (e.g., semiconductor wafer edge) distortion that causes pronounced non-correctable (e.g., overlay and/or other) errors, and significant substrate-to-substrate distortion variation because the current coupling processes are highly substrate material property dependent. The measured flatness and shape do not provide sufficient indications of these substrate material properties. Advantageously, in the described systems and methods, key substrate material properties, such as elastic modulus (E), geometrical properties (I), and deformation moments (M), are determined for a specific substrate just prior to coupling based on directly measured substrate deformation, then provided as feedback for real-time adjustments to the coupling process for that substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
44.
OPTICAL VORTEX BASED METROLOGY SYSTEMS AND METHODS
Optical vortex based metrology systems and methods are described. A radiation source is configured to irradiate a metrology target in one or more layers of a patterned substrate with radiation. The metrology target is configured to diffract and impart orbital angular momentum to the radiation from the radiation source. A radiation sensor is configured to generate a metrology signal based on the orbital angular momentum of the diffracted radiation received from the metrology target. The metrology signal comprises alignment position information and/or overlay information for the one or more layers. Advantageously, orbital angular of momentum of diffracted radiation can carry additional information useful to generate more accurate measurement compared to existing metrology systems, where only phase or intensity information is used.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
45.
PROJECTION SYSTEM CHARACTERISATION SYSTEM AND METHOD
Disclosed herein is a computing system configured to perform a method for determining aberrations of an optical system in response to patterned light, the method comprising: determining a combination of test features that substantially corresponds to an arrangement of product features on a patterning device arranged to pattern light before the light passes through the optical system; and determining aberrations caused by the response of the optical system to the patterned light in dependence on the known response of each test feature in the determined combination.
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Van Mil, Joost, Johannes, Lambertus
Van Kampen, Maarten
Cats, Selwyn, Yannick, Frithjof
Abstract
An optical element for an EUV lithographic apparatus, the optical element comprising: an optical surface (151) configured to receive radiation; a support member (152) that is electrically conductive; and a spacer (155) that is electrically insulating and configured to electrically isolate the optical surface, wherein a capacitance between surfaces separated by the spacer is less than 1 pF.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
A radiation system comprising a deformable minor having a reflective surface arranged to receive and reflect a laser beam to form a reflected laser beam, a beam splitter arranged to separate the reflected laser beam into a first portion and a second portion, a sensor, a focusing system configured to form an image of the reflective surface at the sensor using the first portion of the reflected laser beam, the sensor being configured to output beam data representative of the reflected laser beam, means for generating radiation using the second portion of the reflected laser beam, and a controller operable to cause the deformable mirror to deform the reflective surface based on the beam data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
48.
SYSTEMS AND METHODS FOR MOTION CONTROL OF A PATTERNING DEVICE IN A LITHOGRAPHY APPARATUS
A reticle is typically clamped to a chuck in a lithography apparatus by clamps. The force provided by the clamps may limit how fast the reticle can accelerate (e.g., if the reticle accelerates too quickly, momentum of the reticle may break the clamping force and the reticle may slip on the chuck). A new motion control system is described, which applies a pushing force to the reticle during acceleration, to keep the reticle in its intended position during movement. The system comprises a first portion coupled to a short stroke stage of the lithography apparatus and a second portion coupled to a long stroke stage. The first portion is configured to push on the reticle so that it stays in its intended position. The second portion is configured to interact with the first portion to cause the first portion to support the reticle.
A method of generating control actions for controlling a production system, such as by transmitting the control actions to a control system of the production system. The method includes receiving, by a memory unit, a set of observation data characterizing a current state of the production system; processing, by a first neural network module of the memory unit, an input based on at least part of the observation data to generate encoded observation data; updating, by a second neural network module of the memory unit, history information stored in an internal memory of the second module using an input based on at least part of the observation data; obtaining, based on the encoded observation data and the updated history information, state data; and generating, based on the state data, one or more control actions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06N 3/044 - Recurrent networks, e.g. Hopfield networks
An assembly for a lithographic apparatus, wherein the assembly is configured to heat a pellicle membrane by one of or a combination selected from: i) provision of heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm. Also a method of extending the operative lifespan of a pellicle membrane, the method including heating at least a portion of a pellicle membrane when illuminated by EUV by one of or a combination selected from: i) providing heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating to effect heating of the at least one portion of the pellicle membrane, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An improved systems and methods for generating a denoised inspection image are disclosed. An improved method for generating a denoised inspection image comprises acquiring an inspection image; generating a first denoised image by executing a first type denoising algorithm on the inspection image; and generating a second denoised image by executing a second type denoising algorithm on the first denoised image.
A heterodyne interferometer system comprises: a first light source providing a first laser beam having a first frequency f1; a second light source providing a second laser beam having a second frequency f2 which differs from the first frequency; a combiner for polarizing the first and second laser beams and for providing an input beam wherein the polarized first and second laser beams are combined; an optical resonator cavity comprising an odd number of at least partially reflective mirrors arranged in the cavity for reflecting and circulating the input beam in the cavity, the cavity being adapted for receiving the input beam and providing an output beam comprising a first spatial mode having the first frequency f1 and a first polarization and a second spatial mode having the second frequency f2 and a second polarization which differs from the first polarization; and a heterodyne interferometer for receiving the output beam.
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
A lithographic apparatus comprises: a substrate table; a projection system; a gas lock funnel; and a membrane. The substrate table is configured to hold a substrate. The projection system comprises optics configured to project radiation onto a target portion of the substrate. The membrane is supported by the gas lock funnel and arranged between the projection system and the substrate table. The gas lock funnel may defines a nozzle that is arranged to provide a gas in the vicinity of the membrane such that on the projection system side of the membrane the gas is directed preferentially towards a peripheral portion of the gas lock funnel. A final optical element of the projection system may have a central aperture and the nozzle may be arranged to direct the gas preferentially away from the central aperture in the final optical element.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
54.
MEMBRANE MONITORING APPARATUS AND METHOD, AND LITHOGRAPHIC APPARATUS
A monitoring subsystem for monitoring a membrane in use in a lithographic apparatus, the monitoring subsystem comprising: a light source configured to illuminate the membrane, the membrane being arranged between a first region and a second region of the lithographic apparatus; a light detector configured to measure a total power of light incident on a field of view of the light detector, the light being emitted from the light source and reflected off the membrane; and a controller configured to determine a level of degradation of the membrane at least in part based on the measured total power of light incident on the field of view of the light detector.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
Systems and methods for source or mask optimization of a patterning process. Methods may include performing a lithography simulation to predict patterning results; identifying stochastic defects from the predicted patterning results; defining a cost function and a pseudo-gradient; determining a metric of the stochastic defects and the pseudo-gradient for the cost function associated with a performance metric of the patterning process at evaluation locations; and iteratively adjusting the characteristics of the mask or the source based on the metric and the guide function. Methods may include performing a lithography simulation to generate a resist image (RI); determining stochastic errors as a function of a variable bias map (VBM) and the RI; determining a cost function comprising the stochastic errors; determining a gradient of the cost function; and iteratively adjusting the characteristics of the mask or the source based on the gradient of the cost function.
Systems and methods of aligning beams with an aperture array for multi-beam inspection of a sample are disclosed. The method comprises the steps of forming a plurality of primary charged-particle beamlets from a charged-particle beam, positioning a movable aperture plate upstream from a first aperture array in a first position, wherein in the first position, apertures of the movable aperture plate are aligned with corresponding apertures of the first aperture array, adjusting a path of the primary charged-particle beamlets, using a charged-particle beam alignment deflector, to enable a portion of charged particles of the primary charged-particle beamlets to pass through the aligned apertures, resulting in an alignment between the beamlets and the corresponding apertures of the first aperture array, and moving the movable aperture plate in a second position to enable the primary charged-particle beamlets to pass through the first aperture array without passing through the movable aperture plate.
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. (Germany)
Inventor
Uebel, Patrick, Sebastian
Frosz, Michael, Henoch
Abstract
A method of determining a dimensional parameter of a microstructured optical fiber (MOF), the method comprising: directing radiation towards the MOF; obtaining one or more signals associated with interference of the radiation between structural elements of the MOF; determining a distance between the structural elements based on the one or more signals associated with interference of the radiation between structural elements of the MOF; and determining the dimensional parameter based on the determined distance. A method for obtaining a MOF is also described.
The embodiments of the present disclosure provide a method of processing data derived from a sample, comprising processing an initial data set of elements derived from a detection by a detector for calibration, the data set comprising elements representing nuisance signals and detection signals. The processing of the initial data set comprising: fitting a distribution model to the initial data set to create a nuisance distribution model; setting a signal strength value, and selecting elements in the initial data set having a magnitude greater than the signal strength value as a set of defect candidates; fitting a distribution model to the set of defect candidates to create a defect distribution model of detection signals; and determining a signal strength threshold dependent on at least the defect distribution model. The determining comprising correcting the defect distribution model.
A charged particle-optical device for projecting a plurality of charged particle beams along respective beam paths towards a sample location, the charged particle-optical device comprising: a charged particle-optical assembly configured to manipulate the charged particle beams, the charged particle-optical assembly comprising a first charged particle-optical element comprising a plate having one or more apertures around a beam path of the charged particle beams; and an electrical connector configured to electrically connect the plate of the first charged particle-optical element to an electrical power source, wherein the electrical connector: comprises a shield configured to define a field free region substantially free of electric fields; and is configured to be electrically connectable to a flexible coupling configured to electrically connect the plate of the first charged particle-optical element to the electrical power source, the flexible coupling located within the field free region.
A substrate arrangement for use in a lithographic apparatus, the substrate arrangement including: a resist; a photosensitive resist under-layer; and a substrate, wherein an exposure threshold of the resist under-layer is lower than an exposure threshold of the resist. The resist and the resist under-layer may be both photosensitive to EUV radiation.
G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Described is a method for assessing a plurality of candidate actions for obtaining evidence data and relating to an assessment action of at least one manufacturing apparatus or system, the method comprising: obtaining at least one probabilistic model which relates said evidence data to an estimated probability of one or more root cause assessments of the manufacturing apparatus; determining, using the at least one probabilistic model, an estimated probability of one or more root cause assessments based on evidence data comprising additional evidence from one or more candidate actions which have not been performed (400); determining a reward based on the respective estimated probability of the one or more root cause assessments and an associated respective cost of said one or more candidate actions; and deciding on whether to perform any of said one or more candidate actions based on said reward.
The present disclosure provides a method for real time parameter tuning for a wafer inspection system. The method comprises acquiring one or more input images streamed from the wafer inspection system; applying a plurality of image enhancement parameters to the one or more input image to generate a plurality of images with different characteristics; identifying defects from the plurality of images by applying a plurality of defect detection parameters; and determining, based on the defects identified on the plurality of images, a parameter combination of the plurality of image enhancement parameters and of the plurality of the defect detection parameters to be used for detecting a first defect type.
A transfer line for transferring molten metal from a reservoir to a nozzle is disclosed. The transfer line comprises a plurality of heater zone members in thermal contact with one another. The heater zone members are arranged to maintain a temperature of the metal over the transfer line such that the metal remains in a molten state. The transfer line comprises thermal interconnection members arranged between adjacent ones of the heater zone members. Thermal contact between adjacent heater zone members is provided by the thermal interconnection members.
The invention provides a setpoint generator for a position control system of a positioner comprising a master module and a slave module, the positioner being configured to displace an object, the setpoint generator being configured to, during a displacement of the object: - determine a master setpoint trajectory for the master module; - determine a slave setpoint trajectory for the slave module by means of an optimization algorithm; the optimization algorithm using at least part of the master setpoint trajectory, one or more boundary conditions and an objective function, the objection function being associated with a performance characteristic of the positioner.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 19/19 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
65.
MEMBRANES FOR USE WITHIN A LITHOGRAPHIC APPARATUS AND A LITHOGRAPHIC APPARATUS COMPRISING SUCH A MEMBRANE
A self-standing membrane for a lithographic apparatus, the membrane comprising a MoSi2 layer, wherein the membrane is transmissive for at least 65% EUV radiation.
66.
SYSTEMS AND METHODS FOR GENERATING MULTIPLE ILLUMINATION SPOTS FROM A SINGLE ILLUMINATION SOURCE
Spots of illumination directed at a target are described. Ghost reflections often prevalent in wafer alignment sensors are reduced or eliminated. First, second, and third optical elements are described. The first optical element receives illumination along a first axis, reflects a first portion of the illumination away from the first axis, and transmits a second portion of the illumination along the first axis. The second first optical element receives the first portion of the reflected illumination and at least partially reflects a third portion of the illumination along a second axis. The third first optical element receives and fully reflects a fourth portion of the illumination along a third axis. The second portion, third and fourth portions of the illumination are directed toward the target at different angles relative to each other to create three different spots of illumination.
A charged particle assessment apparatus for detecting defects in samples by scanning a charged particle beam across a sample; the apparatus comprising:
A charged particle assessment apparatus for detecting defects in samples by scanning a charged particle beam across a sample; the apparatus comprising:
a detector unit configured to output a digital detection signal of pixel values in response to signal particles incident from the sample, the pixel values representing elongate pixels.
A metrology system includes a light beam metrology apparatus configured to sense one or more aspects of an amplified light beam and to make adjustments to the amplified light beam based on the sensed one or more aspects; a target metrology apparatus configured to measure one or more properties of a modified target after a target has interacted with the amplified light beam, and to determine a moment when the modified target achieves a reference calibration state; and a control apparatus configured to: receive the reference calibration state and the moment at which the reference calibration state is achieved from the target metrology apparatus; determine a light beam calibration state of the amplified light beam based on the received reference calibration state and the moment at which the reference calibration state is achieved; and provide the light beam calibration state to the light beam metrology apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
A charged particle-optical apparatus for assessing a sample at an assessment location, the charged particle-optical apparatus comprising: an assessment charged particle-optical device configured to project an assessment charged particle beam along an assessment beam path toward an assessment location, the assessment charged particle beam for assessing a sample at the assessment location; a preparatory charged particle-optical device configured to project a preparatory charged particle beam along a preparatory beam path, the preparatory charged particle beam for preparing a sample for assessment; and a light source configured to project a light beam toward an illumination location; wherein a locational relationship between the illumination location and the assessment charged particle-optical device is different from a locational relationship between the assessment location and the assessment charged particle-optical device.
In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure provides a lithographic process for handling two substrates in parallel, the process comprising the steps of: - exposing a first substrate on a first substrate table; - determining an available delay time for executing a second substrate sequence for measuring of a second substrate, and - optimizing the second substrate sequence taking into account the available delay time by delaying at least a part of the second substrate sequence. The second substrate is a closing wafer and the second substrate sequence is a closing wafer sequence. The process comprises the steps of determining whether the second substrate sequence is production critical; and if the second substrate sequence is production critical, executing the second substrate sequence without delay.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An actuator system includes a linear motor that has a first part, the first part being electrically communicable with a multi-phase power source and comprising an array of coils, the coils each having a respective ferromagnetic core, a second part, the second part comprising an array of magnets, the first and second parts being movable relative to each other in response to electrical signals from the multi- phase power source, a force sensor, configured to measure a force of mutual attraction between the first part and the second part, and a controller, configured to control the electrical signals responsive to variations in the force of mutual attraction.
A transport system includes an object stage, two opposing pairs of linear motors, and a controller. The two opposing pairs of linear motors accelerate the object stage along a longitudinal axis and maintain a vertical gap between the object stage and the two opposing pairs of linear motors along a vertical axis. The controller is coupled to the two opposing pairs of linear motors and controls movement of the object stage and the vertical gap. The transport system can include reluctance actuators coupled to the object stage to maintain the vertical gap and a horizontal gap between the object stage and the reluctance actuators by counter-balancing forces generated by the controller. Advantageously the transport system can reduce contamination (avoids gas bearings), reduce parasitic normal forces, reduce cogging, provide low negative stiffness, maintain precise linear control of the object stage, and maintain equal gaps around the object stage during high acceleration.
A reticle conditioning nozzle configured to supply conditioning fluid to a sub-volume of a reticle handling module includes an inlet end, configured to receive conditioning fluid from a conditioning fluid source, an outlet end, configured to distribute the conditioning fluid into the sub-volume of the reticle handling module, wherein the outlet end is configured to deliver two separated fluid flows, a first fluid flow across a top surface of a reticle in the reticle handling module, and a second fluid flow across a bottom surface of the reticle, and a transitional section, comprising vanes disposed between the inlet end and the outlet end, the transitional section being configured to vary a flow of the conditioning fluid across a width of the outlet end such that a temperature gradient across a surface of the reticle is reduced.
A droplet generator for an EUV light source includes a fluid cavity within a structure, the fluid cavity having a first fluid cavity end being open or otherwise capable of receiving a fluid and a second fluid cavity end; a particle filter within the fluid cavity dividing the fluid cavity into an upstream volume between an upstream surface of the particle filter and the first fluid cavity end, a filter volume occupied by the filter, and a downstream volume downstream of a downstream surface of the filter; and a tube having a first opening positioned outside the fluid cavity, the tube extending from the first opening through the second fluid cavity end to a second opening within the downstream volume, the tube extending into the downstream volume by more than 10% of a distance from the first opening to the second opening.
An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
G01K 11/12 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in colour, translucency or reflectance
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
77.
METHOD OF DETERMINING A POSITIONING CORRECTION FOR A LITHOGRAPHIC PROCESS
Disclosed is a method of determining a positioning correction of a substrate in a lithographic process. The method comprises obtaining a trained first model, the trained first model having been trained to minimize a force balance residual of forces on a substrate subsequent to performing at least one action resulting in a physical deformation of said substrate, said physical deformation being impacted by nonlinear frictional interaction between the substrate and a substrate support supporting the substrate, for various training datasets; obtaining estimated substrate deformation data relating to the substrate; inputting said estimated substrate deformation data into said trained first model to obtain modeled substrate deformation data relating to said substrate subsequent to said action, said modeled substrate deformation data accounting for said nonlinear frictional interaction between the substrate and the substrate support; and determining a positioning correction of said substrate in an exposure using said modeled substrate deformation data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
78.
SEMI-SUPERVISED, SELF-SUPERVISED, AND REINFORCEMENT LEARNING MACHINE LEARNING MODELS FOR MASK PREDICTION
A method for training a machine learning (ML) model for mask pattern generation, comprising: obtaining the ML model, the ML model configured to generate an output mask pattern based on an input pattern; and training the ML model by: applying the ML model to a input training pattern to generate a predicted mask pattern; applying a forward model to the predicted mask pattern to generate a predicted wafer pattern, the forward model configured to predict an output wafer pattern based on an input mask pattern; determining a difference between the target wafer pattern and the predicted wafer pattern; and adjusting the ML model based on the difference between the target wafer pattern and the predicted wafer pattern. A method for training a generative model to create mask patterns is also provided. Some embodiments provide model refinement through reinforcement learning, which may be used with any other model provided.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of measuring a parameter of a structure of a substrate comprises directing a beam of an emitted radiation onto the structure and thereby generating a diffracted radiation due to diffraction by the structure. The emitted radiation has a spectrum comprising a plurality of peaks. The method further comprises using an imaging sensor to detect the diffracted radiation; using knowledge regarding the spectrum and a prior of the diffraction efficiency to obtain an estimate of diffraction efficiency as a function of wavelength; and using the estimated diffraction efficiency to measure the parameter of the structure.
Multiple cover store positions are provided within an in-vacuum reticle library area of a lithographic apparatus. A system for handling a reticle includes a vacuum chamber, a library configured to hold reticle pods in vacuum in reticle pod positions disposed within the vacuum chamber, each reticle pod including a respective baseplate, reticle, and cover. The system includes an in-vacuum robot to selectively pick a reticle from the plurality of reticles and provide the picked reticle to a reticle exchange device, and a plurality of actuators, each actuator corresponding to a respective one of the pod positions, and each actuator being arranged to remove the cover from a corresponding reticle pod and move the cover into a cover storage position associated with the corresponding reticle pod.
A method of operating a microlithographic projection exposure apparatus (10) is described. The exposure apparatus comprises a mask holder (20) for holding a mask (18), a substrate holder (26) for holding a substrate (24), a projection lens (30) having several optical elements (R1 - R4) for imaging mask structures of the mask onto the substrate and a manipulator system (34), wherein the optical elements, the mask holder and the substrate holder each are an optical path element in an exposure optical path of the projection exposure apparatus and the manipulator system is configured for adjusting several travels, defined by travel variables (68), at the optical path elements of the projection lens. The method comprises the following steps: providing a wave front deviation (50) of the projection lens, and determining a control command (42) comprising travels for the manipulator system for correcting the wave front deviation using a model (60). The model describes the wave front deviation as a function of the travel variables and for this comprises a group of offset coefficients (62), which are independent of the travel variables, a group of linear coefficients (64), which are each attributed to one of the travel variables to the power of one, and a group of quadratic coefficients (66), which are each attributed to a product of two of the travel variables or to a square of one of the travel variables. The offset coefficients (62) are calibrated more frequently than the linear coefficients (64).
Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.
G06V 10/98 - Detection or correction of errors, e.g. by rescanning the pattern or by human interventionEvaluation of the quality of the acquired patterns
83.
UTILIZE MACHINE LEARNING IN SELECTING HIGH QUALITY AVERAGED SEM IMAGES FROM RAW IMAGES AUTOMATICALLY
A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A lithographic apparatus comprising a support structure configured to support a patterning device such that the patterning device is positionable in an illumination region; an illumination system operable to receive radiation and direct at least a portion of the received radiation to the illumination region; a substrate table configured to support a substrate; a projection system operable to form an image of a portion of a patterning device supported by the support structure on a substrate supported by the substrate table; a scanning system operable to move the support structure relative to the illumination region along a scanning trajectory so as to move the patterning device supported by the support structure through the illumination region along the scanning trajectory; wherein the illumination system is configured to control a shape of the illumination region based on an overlay error or a focus error.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
85.
ELECTROMOTIVE FORCE BRAKING IN A LITHOGRAPHIC APPARATUS
A braking system can include a moving frame, one or more balance masses, one or more actuators, and one or more mechanical buffers. The moving frame can move with a predetermined kinetic energy. The one or more balance masses can absorb reaction forces exerted by the moving frame. The one or more actuators can move the moving frame and stop movement of the moving frame through braking to prevent collision damage in an error scenario. The one or more actuators can be electrically shorted to generate an electromotive braking force opposite to a direction of motion of the moving frame to reduce the kinetic energy of the moving frame and to reduce a braking distance of the moving frame. The one or more mechanical buffers can absorb a remainder of the kinetic energy of the moving frame remaining after the one or more actuators have completed their braking action.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
86.
INSPECTION APPARATUS, WEDGE SYSTEM FOR REDUCING ABERRATIONS, AND METHOD OF FABRICATION THEREOF
A method of reducing optical aberrations in an optical system includes determining an aberration induced by the optical system. The determining includes transmitting a first beam of radiation having a first wavelength through a wedge system of the optical system. The wedge system includes radiation-curable adhesive disposed between first and second wedges. The determining also includes analyzing the first beam using a detector disposed downstream of the wedge system to determine the aberration. The method also includes curing the radiation-curable adhesive based on the analyzing of the first beam. The curing includes adjusting, using a spatial light modulator, an intensity distribution of a second beam of radiation, having a second wavelength different than the first wavelength, based on the analyzing of the first beam. The curing also includes directing the second beam to the radiation-curable adhesive to induce a position-dependent optical property at the radiation-curable adhesive.
There is provided a carbon nanotube pellicle membrane for a lithography apparatus, the pellicle membrane including a sacrificial coating. Also provided is a pellicle for a lithographic apparatus, the pellicle including such a pellicle membrane and a support frame for supporting the pellicle membrane, as well as a lithographic apparatus comprising such a pellicle membrane or pellicle. Also described is a method and apparatus for manufacturing a pellicle membrane, as well as the use of such a pellicle membrane, pellicle, lithographic apparatus, method or manufacturing apparatus in a lithographic method or apparatus.
Disclosed is a method of determining an exposure strategy for at least a first exposure in a first layer of a substrate with a first correction capability and at least a second exposure in a second layer of said substrate with a second correction capability, the second correction capability being different to the first correction capability, the method comprising: determining a first layer correctable error component of said first layer parameter of interest data, which is correctable according to said first correction capability; determining a first portion of said first layer correctable error component uncorrectable according to said second correction capability; dividing said first portion of said first layer correctable error into at least a first sub-portion and a second sub-portion; and attributing said first sub-portion to a first exposure error budget and said second sub-portion a second exposure error budget.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
89.
MULTIPLE PITCH SEM OVERLAY MARKS AND ALGORITHM FOR STITCHING AREA
Improved systems and methods for determining stitching overlay and other metrology parameters in semiconductor manufacturing are disclosed. The systems and methods may include acquiring a measured image of multiple overlay marks within a single field of view of an inspection system; individually tuning the image processing algorithm parameters of the measured image for each overlay mark to determine measured values of each overlay mark; and comparing the measured values to determine the stitching overlay or other metrology parameters.
The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An optical system comprising an optical component configured to modify electromagnetic radiation and an electric motor configured to actuate the optical component. The electric motor comprises a mover comprising a plurality of magnetic components connected to the optical component. The electric motor comprises a stator unconnected to the mover comprising a plurality of electric components configured to receive an electric current and thereby interact with a magnetic field of the plurality of magnetic elements for contactless actuation of the optical component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
92.
VERTICALLY FEDERATED TRAINING OF A MACHINE LEARNING MODEL USED BY DIFFERENT PARTICIPANTS FOR CONFIGURING A SEMICONDUCTOR MANUFACTURING PROCESS
Training a machine learning model used by different participants is described. Vertically federated learning is used to train the model with time series data sets. Time series data sets received from different participants are aligned, with each time series data set comprising different features corresponding to one or more samples common to each participant, but preserving the privacy of each time series data set for participants. First model parameters are received from a first participant. These are determined based on the aligning and first features provided by the first participant in a first time series data set. Second model parameters are received from a second participant. These are determined based on the aligning, second features provided by the second participant in a second time series data set, and semiconductor manufacturing process outputs associated with the second features. The model is trained based on the first and second model parameters.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
93.
LEARNING-BASED LOCAL ALIGNMENT FOR EDGE PLACEMENT METROLOGY
A charged particle beam inspection method for edge placement error detection includes acquiring a grayscale inspection image and performing a series of transformations between the inspection image and a binary reference image to calculate a deformation map. The deformation map may then be applied to the binary reference image to generate a binary customized contour image that matches the edge locations of patterns in the inspection image.
The invention provides an object holder to hold an object, comprising: a clamp side to clamp the object, wherein the clamp side is electrically conductive, at least one electrode arranged at a distance from the clamp side, and electrically isolated from the clamp side, a controller arranged to provide an electrode voltage to the at least one electrode based on a measured charge signal representative for a charge level of the object holder and/or the object in order to decrease a potential difference between an electrical potential of the clamp side and an electrical potential of the object.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
95.
MECHANICALLY CONTROLLED STRESS-ENGINEERED OPTICAL SYSTEMS AND METHODS
A fast and dynamic waveplate is described. The present systems and methods utilize stress birefringence that generates inside a plate when force is applied on one or more sides of the plate. The force is applied using one or more actuators distributed along the side(s) of the plate. The magnitude of the force can be controlled using a control unit. A generated stress birefringence is spatially varying across the plate. By carefully adjusting the force, the plate can be converted into a waveplate with an arbitrary value of retardance that is determined by the force. Since the parameter that determines the birefringence is force, a control unit can be used to apply different combinations of force values at a sub-millisecond speed to achieve fast control of the value of the birefringence as well as an orientation in the plate.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
96.
SUBSTRATE TABLE, LITHOGRAPHIC APPARATUS, STICKER, COVER RING AND METHOD OF OPERATING A LITHOGRAPHIC APPARATUS
A substrate table, for use in an immersion lithographic apparatus, having a support area defining a support plane to support a substrate to be patterned and an upper surface surrounding the support area, wherein: the upper surface has an outer region that is substantially planar and a transition region proximate the support area; and the transition region is not co-planar with the outer region so as to ameliorate a level transition between the outer region and a non-standard substrate, which has a thickness different than a distance between the support plane and a nominal plane defined by the outer region.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
97.
CONFIDENTIALITY-PRESERVING COLLABORATIVE MODEL FOR DERIVING INFORMATION ON A PRODUCTION SYSTEM
A method is presented for using a distributed network to derive information characterising a production system described by variables. The network comprises two probabilistic models implementing a graph comprising nodes associated with a corresponding one of the variables, and directed edges connecting respective pairs of the nodes. Each graph comprises an interface node for which the corresponding associated variable is common and normal nodes to which edge(s) are directed that are associated with a respective conditional probability table (CPT) specifying a probability of the variable being in a set of states based on the variables associated with the corresponding one or more nodes from which the one or more edges are directed. The interface node is associated with a partial CPT of the common variable. The method comprises generating, using the at least two models, conditioned data specifying a probability distribution of the state of the common variable.
Disclosed herein is a tool for an EUV exposure process, the tool comprising: a substrate support arranged to support a substrate; an electrode arranged in the path of the EUV radiation and between the substrate support and a main illumination region, wherein the main illumination region is a region through which patterned EUV radiation propagates to illuminate a substrate in the EUV exposure process; and a power supply arrangement configured to generate an electric field in a substrate supported by the substrate support.
Described is a method and system for reducing a mask three-dimensional (M3D) induced contrast loss in a lithography process. A diffraction pattern of a target pattern is determined based on a zeroth and first order diffraction of the target pattern. The diffraction pattern is discretized and partitioned into zeroth order and first order diffraction zones to create partitioned zones. A wavefront target is determined based on the partitioned zones and a desired phase shift between the zeroth order diffraction and the first order diffraction.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
100.
METHOD FOR REDUCING THE EFFECTS OF PARASITIC FORCES AND/OR MOMENTS ON THE IMAGING QUALITY OF A PROJECTION-EXPOSURE APPARATUS, AND PROJECTION-EXPOSURE APPARATUS WITH A MODULE
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
