The invention relates to a substrate storage system comprising an enclosure, a substrate loading port to load a substrate into and/or unload a substrate from a loading position within the enclosure, and a substrate holder to hold a substrate within the enclosure. The substrate holder is configured to move the substrate between the loading position and at least one storage position spaced from the loading position. The substrate storage system further comprises a purging system to mainly purge the substrate when located in the loading position, and wherein the at least one storage position is a mainly non-purged space.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
An electrostatic lens for a charged particle-optical device comprises: an upbeam charged particle- optical element in which are defined a plurality of upbeam apertures for respective beams of a plurality of beams of charged particles; a macroscopic charged particle-optical element in which is defined a macroscopic aperture for the plurality of beams; and a downbeam charged particle-optical element in which are defined a plurality of downbeam apertures for respective beams of the plurality of beams; wherein the macroscopic charged particle-optical element is located between the upbeam charged particle-optical element and the downbeam charged particle-optical element.
Disclosed is a method of determining a common point for each of a normal target image and complementary target image of at least one pair of target images. The method comprises obtaining the at least one pair of target images, each pair of target images of the at least one pair of target images comprising a normal target image and a complementary target image, the normal target image being obtained from a normal diffraction order of a pair of corresponding diffraction orders as diffracted from a target on a substrate and the complementary target image being obtained from a complementary diffraction order of the pair of corresponding diffraction orders; and determining the common point for each target image of the at least one pair of target images by referring each the target image to at least one application specific reference image.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
4.
METHOD OF PERFORMING A QUALIFICATION ACTION ON AN EXPOSURE APPARATUS
Disclosed is a method of method of performing a qualification action relating to an exposure apparatus. The method comprises: using the exposure apparatus to expose a qualification patterning device (400) onto at least one qualification substrate, the qualification patterning device (400) comprising one or more sets of metrology features (410) which comprise one or more overlay features (445) and one or more imaging features (440), the overlay (445) and imaging features (440) being in close proximity; measuring the at least one qualification substrate to obtain qualification data comprising at least overlay qualification data and imaging qualification data; determining at least one local structure placement metric from said at least overlay qualification data and imaging qualification data; and qualifying said exposure apparatus by assessing said local structure placement metric.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
5.
CLAMPING SYSTEMS AND METHODS FOR SEMICONDUCTOR PROCESSING
A new clamping system is described. The system comprises an electrode configured to generate an electric field to provide a clamping force, and a capping layer coupled to the electrode. The capping layer is configured to reduce a local maximum in the electric field strength, located at or near the edge of the electrode. The capping layer causes a redistribution of electric field lines around the edge of the electrode, as material of the capping layer is configured to store more electric energy, which locally reduces the electric field strength. This local reduction in electric field strength reduces or prevents "hot spots" in a clamp, which facilitates increased clamping pressure, reduces the risk of clamp failure, reduces or prevents residual clamp holding forces, and has other advantages.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
6.
SCANNING DEFLECTOR DESIGN FOR A CHARGED PARTICLE BEAM APPARATUS
A system and method for operating an electron deflector in a scanning electron microscope comprises operating the electron deflector in two different modes of operation. In a first mode of operation, a control circuit may comprise an amplifier stage configured as a transimpedance amplifier. The first mode of operation may be used for performing relatively higher scanning speeds with relatively lower spatial resolution. In a second mode of operation, the amplifier stage may be configured as an integrator amplifier. The second mode of operation may be used for performing relatively lower scanning speeds with relatively higher spatial resolution.
Improved systems and methods for optimizing a two-dimensional metrology target are disclosed. The method includes decomposing a two-dimensional metrology target associated with a lithography process into one or more reduced-dimension metrology targets, simulating a performance of the one or more reduced-dimension metrology targets, and optimizing the two-dimensional metrology target based on the simulated performance of the one or more reduced-dimension metrology targets.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
8.
IN-SITU DETECTOR BANDWIDTH MEASUREMENT USING IMAGES OF A CHARGED PARTICLE SYSTEM
A charged particle beam apparatus includes a charged particle beam source, a charged particle optical system, a charged particle detector, and a controller. The charged particle beam source generates a beam of primary charged particles. The charged particle optical system directs the beam of primary charged particles at a sample surface. The charged particle detector detects secondary charged particles associated with interaction of the primary charged particles with the sample surface. The controller determines an image of the sample surface based on the detected secondary charged particles. The image includes an array of pixels. The controller also determines an autocorrelation function between a signal represented by a line of the pixels and delayed copies of the signal. The controller also determines a bandwidth of the charged particle detector based on the autocorrelation function.
A method of inspecting an image includes receiving the image, and generating a reference image based on the received image. The method also includes comparing the received image with the reference image to identify one or more defects in the received image or confirm that the received image is free of defects.
The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
An assembly includes a window useful for optical access to an interior of an extreme ultraviolet (EUV) light source vessel, the window having a transmission band and a protector configured to shield the window from the interior of the EUV light source vessel, the protector comprising a sheet with a surface facing the window across a gap, the sheet having a thermal conductivity in the range of 10 to 2000 W/(m·K). The sheet can be a sapphire sheet, and can have an optical coating on the surface facing the window, the coating reflecting at least some radiation outside the transmission band, and the opposite side of the sheet can be bare sapphire.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
12.
SYSTEMS AND METHODS OF ENERGY DISCRIMINATION OF BACKSCATTERED CHARGED-PARTICLES
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a charged-particle source configured to generate primary charged particles, the primary charged particles forming a primary charged-particle beam along a primary optical axis, and a charged-particle detector comprising a plurality of con-centric segments of a charged-particle sensitive material configured to detect charged particles emitting from a sample after interaction of the primary charged-particle beam with the sample, wherein each segment of the plurality of concentric segments is configured to collect the emitted charged particles having a range of energy levels and a dominant energy level.
A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
14.
SYSTEMS AND METHODS FOR HANDLING THE IMPACT OF FAILING BEAMS IN MULTIBEAM INSPECTION
Systems and methods for handling the impact of failing beams in multibeam inspection. Methods include determining a capture rate that is based on a number of failing beams of the multibeam arrangement. Methods include determining a scanning strategy for scanning a sample surface having at least two regions having a common pattern using the multibeam arrangement by using multibeam arrangement information including positions of failing beams in the multibeam arrangement, wherein the multibeam arrangement has a field of view on the sample surface that is a portion of the sample surface and the scanning strategy determines the positions of different portions on the sample surface in the scanning strategy when stepping the sample and field of view of the beam grid relative to each other, the scanning strategy applying a shift between the positions of sequential portions that is a fraction of a dimension of the portion.
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Pays‑Bas)
STICHTING VU (Pays‑Bas)
RIJKSUNIVERSITEIT GRONINGEN (Pays‑Bas)
UNIVERSITEIT VAN AMSTERDAM (Pays‑Bas)
ASML NETHERLANDS B.V. (Pays‑Bas)
Inventeur(s)
Purvis, Michael, Anthony
Engels, Dion, Junior
Versolato, Oscar, Oreste
Abrégé
A method of adjusting an amount of extreme ultraviolet (EUV) radiation generated by directing laser pulses onto liquid fuel targets to generate EUV emitting plasma, the laser pulses having a wavelength between 1.6 microns and 2.5 microns, wherein the method comprises adjusting an intensity of the laser pulses, wherein the laser pulses burn fully through the liquid fuel targets before the intensity of the laser pulses is adjusted, and wherein the laser pulses burn fully through the liquid fuel targets after the intensity of the laser pulses is adjusted.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
There is provided method for controlling bonding of a donor substrate to an acceptor substrate, the method comprising: treating a surface of the donor and/or acceptor substrate; and applying a substrate region specific property to the treated surface of the donor and/or acceptor substrate to locally control an evolution of a bonding wave.
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
A charged particle beam apparatus includes a charged particle beam source, a charged particle optical system, a charged particle detector, and a controller. The charged particle optical directs a beam of primary charged particles at a sample surface. The controller determines a contour of a target feature disposed at the sample surface based on detected charged particles at the detector. A first layer structure and a second layer structure of the target feature are based on a design pattern that includes a first layer design pattern and a second layer design pattern. The controller determines an alignment position of the first layer structure, via an inverse die-to-database (iD2DB) alignment that includes a search for at least a portion of the first layer design pattern in a search area defined by the determined contour of the target feature, an alignment position of the second layer structure, and a difference thereof.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is a substrate bonding apparatus, comprising: a first clamp for securely holding a first substrate comprising a first bonding surface; and a second clamp for securely holding a second substrate comprising a second bonding surface arranged to face the first bonding surface and to be bonded therewith; wherein at least one of the clamps comprises a plurality of embedded actuators operable to displace along at least a direction perpendicular to a transversal plane in which the corresponding substrate is held; and wherein the first clamp and/or the second clamp are configured such that displacement of one or more of the actuators of the first clamp causes a deformation of the first bonding surface of the first substrate and/or displacement of one or more of the actuators of the second clamp causes a deformation of the second bonding surface of the second substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The present invention provides a module for measuring clamping status of a substrate on a substrate support. The module comprises a pin arranged such that, when a substrate is placed on the substrate support, the pin is displaced by contact with a local region of the substrate adjacent to the pin. The module further comprises a sensor configured to determine a distance between the local region of the substrate and the substrate support based on movement of the pin.
The invention provides a method for cleaning a sensor surface using a cleaning device which comprises a supply arrangement for delivering a cleaning gas and a cleaning liquid to a cleaning space, and an extract arrangement, wherein the method comprises: placing the cleaning device in proximity to the sensor surface, delivering the cleaning gas and the cleaning liquid to the cleaning space, controlling the cleaning device in such a way that during use a cleaning mixture is created and confined in the cleaning space, the cleaning mixture being in contact with the sensor surface, and wherein the cleaning gas and the cleaning liquid define contact surfaces between both, extracting the cleaning mixture and any cleaning residue from the cleaning space by applying a reduced pressure at the extract arrangement, and removing the cleaning device from the sensor.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
B08B 3/00 - Nettoyage par des procédés impliquant l'utilisation ou la présence d'un liquide ou de vapeur d'eau
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Van De Kerkhof, Marcus, Adrianus
Abrégé
An arrangement for a lithographic apparatus, comprising: a patterning device (MA) configured to impart a pattern to a beam of radiation, the patterning device (MA) comprising a patterning surface (110) with a pattern thereon; a support structure (100) configured to support the patterning device (MA); and a protective membrane (131) disposed in front of the patterning surface (110); wherein the protective membrane (131) is electrically connected to the support structure (100). Further, a method of applying a bias voltage to a patterning device (MA) in a lithographic apparatus, comprising: determining whether a protective membrane (131) is disposed in front of a patterning surface (110); in a case that the lithographic apparatus is in the production state and the protective membrane (131) is determined to be disposed in front of the patterning surface (110), applying a first bias voltage to the patterning surface (110); and in a case that the protective membrane (131) is determined not disposed, applying a second bias voltage to the patterning surface (110).
G03F 1/64 - Pellicules, p. ex. assemblage de pellicules ayant une membrane sur un cadre de supportLeur préparation caractérisés par les cadres, p. ex. du point de vue de leur structure ou de leur matériau
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is a method for exposing a substrate in an exposure process. The method comprises determining a received dose value per field of a plurality of fields having been exposed on the substrate in a plurality of first exposures; and deciding whether to perform a second exposure on each said field only if its respective received dose value in the first exposure is evaluated to comprise a dose error with respect to a target dose which is above a respective dose error threshold value for that field. A respective dose error threshold is set for each of one or more subsets of said plurality of fields based on one or more of: a property, a location and/or a predicted imaging performance of the field(s) within that subset.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
23.
FULL PLANE DIFFRACTION BASED DIGITAL HOLOGRAPHY METROLOGY SYSTEM AND METHOD
A metrology system comprising: a first illumination beam, the first illumination beam configured to be diffracted by a target; a second illumination beam, the second illumination beam configured to be dispersed by a dispersive element, wherein the dispersive element is configured to introduce a tilt in the second illumination beam in at least one direction; a detector, the detector configured to detect an interference pattern of the first illumination beam diffracted by the target and the second illumination beam dispersed and tilted by the dispersive element; and a processor operatively connected with the detector, the processor configured to determine a phase and/or amplitude of a waveform of the first illumination beam after it has interacted with the target based on the interference pattern detected by the detector.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Pays‑Bas)
STICHTING VU (Pays‑Bas)
UNIVERSITEIT VAN AMSTERDAM (Pays‑Bas)
ASML NETHERLANDS B.V. (Pays‑Bas)
Inventeur(s)
Cromwijk, Tamara, Christina
Mathijssen, Simon, Gijsbert, Josephus
Den Boef, Arie, Jeffrey
Abrégé
A method of correcting an image of a metrology target obtained when the metrology target is illuminated with radiation comprising obtaining a representation image of a metrology target from the image, determining a model of a contribution to the image, contribution which is adversely affecting the quality of the image wherein the model is determined using at least a portion of the representation image of the metrology target and obtaining a correction of the image based on the determined model of the contribution to the image adversely affecting the quality of the image.
G03H 1/04 - Procédés ou appareils pour produire des hologrammes
G03H 1/08 - Procédés ou appareils pour produire des hologrammes pour faire des hologrammes synthétiques
G03H 1/00 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une imageLeurs détails spécifiques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06T 5/10 - Amélioration ou restauration d'image utilisant le filtrage dans le domaine non spatial
25.
OPTICAL AMPLIFIER FOR A DRIVE LASER FOR USE IN A LITHOGRAPHY SYSTEM, LITHOGRAPHY SYSTEM AND METHOD FOR INSTALLING AN OPTICAL AMPLIFIER
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Allemagne)
ASML NETHERLANDS B.V. (Pays‑Bas)
Inventeur(s)
Siegle, Tobias
Fröhlich, Sascha
Geschwander, Mark
Struycken, Alexander Matthijs
Lansbergen, Rob
Janssen, Toni Wil
Abrégé
The present invention concerns an optical amplifier (2) for a drive laser (100) for use in a lithography system (101), in particular an extreme ultraviolet lithography system, with a base frame (400) and with an optics frame (200) to which optical cavities, and optionally beam guiding elements, are attached, wherein the optics frame (200) has a virtual centre plane (C) that is arranged essentially horizontally, wherein the optics frame (200) is supported on the base frame (400) via at least three supports (202, 203, 204) each that are arranged at a point within the virtual centre plane (C) of the optics frame (200). The present invention further concerns a lithography system (101), in particular extreme ultraviolet lithography system, comprising a drive laser (100) with an optical amplifier (200) as mentioned before.
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p. ex. au moyen d'un getter ou d'une réactivationMoyens pour faire circuler le gaz, p. ex. pour uniformiser la pression à l'intérieur du tube
H01S 3/07 - Structure ou forme du milieu actif consistant en une pluralité de parties, p. ex. segments
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
There is provided an optical element for an EUV utilisation apparatus, the optical element comprising alternating layers of crystalline materials having different refractive indices. Also provided is a radiation source for an EUV utilization system, said system including such an optical element. An exposure apparatus comprising such a radiation source and an EUV utilization system, said system including such an optical element, source laser system, or exposure apparatus is also provided. Also provided is a method of manufacturing an optical element, the method including depositing alternating layers of crystalline materials having different refractive indices, as well as the use of such an optical element, radiation source, exposure apparatus, EUV utilization system, and method in an EUV utilization apparatus or method.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
27.
CALIBRATION OF DIGITAL ANALOG CONVERTER TO CONTROL DEFLECTORS IN CHARGED PARTICLE BEAM SYSTEM
A method for controlling deflectors of a charged-particle inspection system is disclosed. The method comprises establishing a mapping relationship for each digital-to-analog converter (DAC) of a plurality of DACs included in a charged-particle inspection system, the mapping relationship characterizing non-linearity behavior of each of the DACs, determining target control signals for manipulating deflectors of the charged-particle inspection system, determining, for each DAC of the plurality of DACs, an error correcting digital input based on a corresponding target control signal among the target control signals and the corresponding mapping relationship, and inputting the corresponding error correcting digital input to each of the DACs to enable each of the DACs to generate a corresponding error compensated output.
Systems, apparatuses, and methods include a providing a raw image of a sample; observing a pixel size of the raw image; converting the raw image into a transformed image by applying a Fourier transform to the raw image; applying a function, based on the pixel size, to the transformed image; and determining a key performance indicator of a resolution of the raw image based on results of the applied function.
Systems, apparatuses, and methods include a detector including a detection element including a portion of a silicon substrate comprising: a front side of the portion of the silicon substrate including a PIN diode that comprises a p-type region and an n-type region; a back side of the portion of the silicon substrate, opposite of the front side, comprising a substantially uniform surface; and a layer on the back side of the portion of the silicon substrate; wherein: a region between the p-type region and the n-type region is configured to form a depletion region when a reverse bias is applied between the p-type region and the n-type region, and the PIN diode is configured to detect an electron that enters the back side of the portion of the silicon substrate and passes through the portion of the silicon substrate to the depletion region.
H10D 62/60 - Distribution ou concentrations d’impuretés
H10D 62/83 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé
30.
SYSTEM AND METHOD FOR GENERATING PREDICTIVE IMAGES FOR WAFER INSPECTION USING MACHINE LEARNING
A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06V 10/77 - Traitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
31.
FLUSHING SYSTEM AND METHOD FOR A LITHOGRAPHIC APPARATUS
There is provided a flushing system for a lithographic apparatus. said flushing system including a gas outlet configured to choke a flow of gas passing through the gas outlet at a predetermined rate. Also provided is a method of flushing a lithographic apparatus. the method including providing a flow of gas through the lithographic apparatus and operating a gas outlet from the lithographic apparatus such that the flow of gas is choked through the gas outlet.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method of classifying product units subject to a process performed by an apparatus, the method including: receiving key performance indicator (KPI) data, the KPI data associated with a plurality of components of the apparatus and including data associated with a plurality of KPIs; clustering the KPI data to identify a plurality of clusters; analyzing the plurality of clusters to identify a plurality of failure modes associated with the apparatus, for each identified failure mode assigning a threshold to each KPI associated with the failure mode; and for each of the plurality of product units: determining the likelihood of each of the plurality of failure modes based on KPI data of the product unit and the thresholds assigned to each KPI associated with one of the plurality of failure modes; and performing a classification based on the likelihoods of each of the plurality of failure modes.
A method of controlling a projection system during exposure of a substrate by a lithographic apparatus, the method comprising obtaining a measurement signal of a change of a differential pressure across one or more lenses of a projection system of the lithographic apparatus, calculating an imaging error caused by movement of one or more lens elements of the projection system due to the change of measured differential pressure during the exposure, calculating lens element adjustments which compensate for the calculated imaging error, applying the lens element adjustments, identifying which exposure areas of the substrate were exposed during a delay between the change of differential pressure occurring and the lens element adjustments being applied, and storing information of the identified exposure areas together with the calculated imaging error.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for evaluating a scanning electron microscope (SEM) system, the method including accessing an SEM image of two or more sets of overlay targets, wherein each set of overlay targets includes buried features and top features, the buried features at a buried depth, wherein, in at least one of the two or more sets of overlay targets, the top features are recessed, each of the recesses having a corresponding recess depth, wherein the recess depths for the top features of the two or more sets of overlay targets are different; and determining a beam tilt angle of a SEM system based on the SEM image of the two or more sets of overlay targets.
A system includes one or more power amplifiers and a controller. The one or more power amplifiers regulate optical output of a laser through an adjustment of the input power applied to the one or more power amplifiers. The controller can increase the amount of applied input power above a steady state input power limit, which increases output of the laser above a steady state output power. The controller can additionally restrict the input power to an input power limit in response to a limiting condition.
H01S 3/223 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c.-à-d. contenant plusieurs atomes
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/041 - Dispositions pour la gestion thermique pour des lasers à gaz
H01S 3/104 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p. ex. par commande des procédés ou des appareils pour l'excitation dans des lasers à gaz
36.
METHOD AND DEVICE FOR PRODUCING A PELLICLE FOR A LITHOGRAPHIC APPARATUS
The invention provides a method of producing a pellicle for covering a patterning device of a lithographic apparatus, the pellicle comprising a film, the method comprising transferring the film from a surface of a liquid in a liquid holding container to a film supporting element, the method comprising the steps of: - contacting the film with the supporting element on a contacting location, - moving the supporting element along a pulling vector with respect to the holding container, the pulling vector having a perpendicular surface component in a perpendicular surface direction perpendicular to the surface of the liquid, thereby transferring the film from the surface of the liquid to the supporting element, - applying a tension force to the film while transferring the film from the surface of the liquid to the supporting element. The invention furthermore provides a pellicle production device configured to perform said method.
A method of modeling and predicting wafer patterns fabricated by a spacer double patterning fabrication process is disclosed. More particularly, a method of using a two-stage simulation model to simulate and predict a feature contour for a wafer fabricated according to a spacer double patterning process. An AEI feature characteristic fabricated according to a spacer double patterning process may be simulated at least 90% faster than a conventional model.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
38.
INTEGRATED OPTICS DISTANCE, LEVELING AND TILT SENSOR
The present system(s) and method(s) use an integrated photonic sensor to determine tilt angle present at the metrology region or mark. The integrated photonic sensor uses two pairs of grating couplers, each pair having an emitting grating coupler and a capturing grating coupler. The positions of the grating couplers may be fixed where a first capturing grating coupler will capture a peak captured light value of its paired emitting grating coupler when the angle of tilt at the region is a positive angle, and a second capturing grating coupler will capture a peak captured light value of its paired emitting grating coupler when the angle of tilt at the region is a negative angle. Using this fixed configuration and knowing the tilt angles at which peak coupling efficiencies would be captured, a ratio is computed using the two captured light values. A tilt angle is determined using this ratio.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01B 11/26 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
A charged particle apparatus for projecting multiple beam grids of charged particle beams towards a plurality of samples. The apparatus includes: a stage configured to support a plurality of samples at respective sample positions; and an array of charged particle devices respectively configured to project a plurality of charged particle beams in a beam grid towards the respective the sample positions. The charged particle devices respectively include: an objective lens configured to direct the beam grid of the charged particle device on a sample at the respective sample position; and a detector configured to detect signal particles from the sample. The stage is configured to be actuated relative to the array of charged particle devices. The stage and the array of charged particle devices are configured such that the array of charged particle devices scan relative to the plurality of samples simultaneously.
Disclosed is an extreme ultraviolet (EUV) mirror, comprising: a substrate; a mirror coating deposited on the substrate and configured to reflect an EUV radiation; and at least one sensor integrated within either the mirror coating or the substrate and configured to detect at least part of the EUV radiation incident on the mirror coating and transmitting therethrough.
The present disclosure relates to a reflective mark for a lithographic apparatus, the reflective mark comprising one or more first portions and one or more second portions arranged to form a diffraction grating, wherein a reflectance of the one or more first portions is greater than a reflectance of the one or more second portions, and a reflectance of the one or more second portions is greater than 1%, and also to a transmissive mark for a lithographic apparatus, the transmissive mark comprising one or more first portions and one or more second portions arranged to form a diffraction grating, wherein a transmittance of the one or more first portions is greater than a transmittance of the one or more second portions, and a transmittance of the one or more second portions is greater than 1%.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Patterning devices enter a lithography apparatus through a load lock. The load lock comprises a vacuum chamber, which is configured to be depressurized from a higher pressure to a lower pressure when a patterning device is loaded inside. A sealing system is configured to maintain the lower pressure in the vacuum chamber. In prior sealing systems, a small volume of gas can become trapped during depressurization, and then escape into the vacuum chamber, causing an undesirable pressure spike. Advantageously, the new sealing systems and methods described herein provide a vented design, which reduces or prevents trapped gas and/or pressure spikes.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
F16J 15/06 - Joints d'étanchéité entre surfaces immobiles entre elles avec garniture solide comprimée entre les surfaces à joindre
An improved load lock chamber is provided. The load lock chamber includes a gas vent port, a first compartment configured to receive a wafer for loading into and unloading from a main vacuum chamber, and a second compartment partitioned from the first compartment. The second compartment is configured to receive gas through the gas vent port. The load lock chamber also includes a flow attenuation path connecting the first compartment and the second compartment. The flow attenuation path is configured to route the gas from the second compartment to the first compartment and to attenuate gas flow.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
44.
ILLUMINATION ADJUSTMENT APPARATUSES AND LITHOGRAPHIC APPARATUSES
An illumination adjustment apparatus includes a plate, actuators, and finger structures. The actuators include coils disposed on the plate. The finger structures include beryllium alloy material. Ones of the finger structures are coupled to corresponding ones of the actuators via magnets. The finger structures are moved independently using the actuators, are disposed at least partially in a path of a beam of radiation to intercept at least a portion of the beam, and adjust an intensity cross-section of the beam based on the moving and the intercepting.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
45.
SUPPRESSION OF PLASMA-INDUCED SURFACE DEGRADATION BY IRRADIATION OF LIGHT
An exposure apparatus comprising: an enclosure defining an environment, wherein the enclosure is configured to receive a main radiation from a main radiation source and to contain a plasma, wherein the enclosure comprises a plasma- facing surface; an additional radiation source configured to generate an additional radiation with wavelength of 300 nm or more and configured to irradiate at least a portion of said plasma-facing surface to generate electrons when the plasma is present.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
46.
METHOD OF DETERMINING CONTAMINATION INFORMATION AND AN OBJECT STAGE ADAPTED TO IMPLEMENT THE METHOD
The present disclosure provides a method of determining contamination information of at least one first sensor of an object table, the method comprising the steps of: - irradiating a first grating of the at least one first sensor with radiation originating from a radiation source related to a second sensor; - capturing reflected radiation as reflected from the first grating; and - determining the contamination information of the first grating based on the reflected radiation.
A method of determining a parameter of interest of a structure comprising at least one first feature oriented along a first axis of a structure coordinate system and at least one second feature oriented along a second axis of the structure coordinate system. The method comprising: illuminating the first feature and the second feature with first illumination from a first direction oblique to said first axis and second axis, so as to generate first scattered radiation from the first feature and second scattered radiation from the second feature, detecting a first interference pattern formed by interference between a portion of the first scattered radiation and first reference illumination; detecting a second interference pattern formed by interference between a portion of the second scattered radiation and the first reference illumination; and determining the parameter of interest of the structure using the first interference pattern and the second interference pattern.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03H 1/00 - Procédés ou appareils holographiques utilisant la lumière, les infrarouges ou les ultraviolets pour obtenir des hologrammes ou pour en obtenir une imageLeurs détails spécifiques
An improved method, apparatus, and system for generating a simulated inspection image are disclosed. According to certain aspects, the method comprises acquiring design data including a first pattern, generating a first gray level profile corresponding to the design data, and rendering an image using the generated first gray level profile.
G06T 11/60 - Édition de figures et de texteCombinaison de figures ou de texte
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p. ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersectionsAnalyse de connectivité, p. ex. de composantes connectées
A method of providing an additional EUV radiation exposure of part of a die on a substrate at a level of EUV radiation power which compensates for a previous low exposure, the method using EUV radiation power incident upon a patterning device of a lithographic apparatus, the lithographic apparatus comprising a first array of mirrors and a second array of mirrors, the first array of mirrors being configured to receive EUV radiation and to reflect the EUV radiation as sub-beams of radiation towards the second array of mirrors, wherein the method comprises rotating mirrors of the first array such that at least some of the sub-beams of radiation are incident on mirrors of the second array at positions which provide reduced transmission of the sub-beams of radiation to the patterning device.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A device for aligning and placing electrical components includes a first stage to support at least one first electrical component, each first electrical component having a plurality of conductive surfaces on a side opposite the first stage, a second stage to support at least one second electrical component, each second electrical component having a plurality of conductive surfaces on a side opposite the second stage, a voltage source to produce a voltage between the conductive surfaces of the first electrical components and conductive surfaces of the second electrical components, and a controller to control relative motion between the first stage and the second stage, and to align corresponding ones of the plurality of conductive surfaces of the first electrical component with corresponding ones of the plurality of conductive surfaces on the second electrical component at least partially on the basis of an electrostatic force therebetween.
A system and method for determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.
Existing die-to-wafer bonding tools use guided alignment to position the dies. A donor die position and its bonding location on an acceptor wafer are measured, and used as input for a bonding transfer mechanism. The measurements and the transfer mechanism contribute to placement errors. Die-to-wafer bonding accuracy requirements are increasing, with placement accuracy down to 50 nm and below often required. Achieving this accuracy with existing die-to-wafer bonding tools is challenging. As a result, new systems and methods for die bonding self-alignment have been developed. As with guided alignment, a transfer mechanism moves the donor die in proximity to a desired acceptor location on an acceptor wafer, but then a self-alignment mechanism controls a relative position between the die and the acceptor wafer during the bonding. This enhances bonding placement accuracy compared to existing die-to-wafer bonding tools, among other advantages.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
53.
METHOD OF DETERMINING DEGRADATION ON A SENSOR FIDUCIAL
Disclosed is a method of determining a fiducial degradation metric for a sensor fiducial. The method comprises obtaining fiducial plane position data describing a position over a time period, and in a fiducial plane, of a plurality of marks on a fiducial surface; determining first fiducial position drift data from the fiducial plane position data, said first fiducial position drift data describing a temporal drift in measured positions within the fiducial plane position data; obtaining height data describing a position over said time period, and perpendicular to the fiducial plane, of the fiducial surface; determining second fiducial position drift data from said height data; and determining the fiducial degradation metric from said first fiducial position drift data and said second fiducial position drift data.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
Disclosed herein is a support system for an EUV lithography apparatus (LA), the support system comprising: a support structure (MT) configured to support an object (MA); a component (31) located such that the object (MA) is between the support structure (MT) and the component (31); and at least one thermal conditioner (32, 33) configured to apply a temperature gradient of at least 1,000°C/m between the object (MA) and the component (31).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is a method of manufacturing devices by lithography, comprising: providing a resist stack on a first substrate, wherein the resist stack comprises a first resist layer, a splitable layer provided on top of the first resist layer and a second resist layer provided on top of the splitable layer; forming a pattern in at least the first resist layer and the second resist layer to obtain a first patterned resist layer and a second patterned resist layer; bonding a second substrate to the second patterned resist layer; and splitting the splitable layer by subjecting it to a splitting mechanism so as to obtain a first patterned device substrate comprising the first substrate and the first patterned resist layer and a second patterned device substrate comprising the second substrate and the second patterned resist layer.
Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
Disclosed is a method for monitoring proper functioning of one or more components of a lithography system. The method comprises determining a frequency response function for each of said one or more components during production activity using the lithography system, at a time during said production activity when control requirements are relatively less stringent; evaluating each of said frequency response functions with respect to control data indicative of nominal lithographic system behavior; and predicting whether to perform a maintenance action on the lithography system based on said evaluating step.
G06Q 10/20 - Administration de la réparation ou de la maintenance des produits
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
58.
METHOD OF FORMING A PATTERNED LAYER OF MATERIAL, APPARATUS FOR FORMING A PATTERNED LAYER OF MATERIAL
Methods and apparatus for forming a patterned layer of material on a substrate. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process. The irradiation locally drives the deposition process in the selected portion to form a patterned layer of material in a pattern defined by the selected portion. A bias voltage of alternating polarity is applied to the substrate during the irradiation to periodically drive secondary electrons generated inside the substrate by the irradiation towards the surface in the selected portion.
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H10D 62/00 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel
H10D 62/80 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux
59.
POSITIONING SYSTEM FOR AN OPTICAL ELEMENT OF A METROLOGY APPARATUS
A positioning system for an optical element such as an objective of a metrology apparatus (e.g., an overlay measurement apparatus used in a semiconductor manufacturing process) is described. The positioning system includes a stage and a positioner. The positioner includes at least one flexible support coupled to the stage, with the at least one flexible support configured to be relatively stiff in an axial direction of the positioner, and relatively flexible in other directions. The positioner includes a base coupled to the at least one flexible support, with the base configured to be actuated to move in the axial direction, and in turn move the stage. The positioner includes a guide configured to couple the base to a frame of the metrology apparatus, with the guide configured to bend when the base is actuated.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
60.
SENSOR MODULE, ILLUMINATOR, METROLOGY DEVICE AND ASSOCIATED METROLOGY METHOD
A sensor module is disclosed for a metrology apparatus. The sensor module comprises an illumination device for illuminating a structure on a substrate, said illumination device comprising at least a first set of illuminators and a second set of illuminators, wherein said first set of illuminators comprise one or more illuminators which are each operable to illuminate said structure with first illumination comprising a first optical characteristic and wherein said second set of illuminators comprise one or more illuminators which are each operable to illuminate said structure with second illumination comprising a second optical characteristic different to said first optical characteristic; an optical system being operable to capture scattered radiation scattered by the structure resultant from the structure being illuminated; and a detector operable to detect the scattered radiation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03H 1/04 - Procédés ou appareils pour produire des hologrammes
G03H 1/26 - Procédés ou appareils adaptés spécialement pour produire des hologrammes multiples ou pour en obtenir des images, p. ex. procédés pour l'holographie à plusieurs couleurs
61.
SYSTEMS FOR PATH COMPENSATION WITH A MOVING OBJECTIVE
A mirror set having a first mirror, a second mirror, and a movable stage to which the mirror set is mounted to cause the first mirror and the second mirror to move together with the movable stage. The first mirror is configured to receive a beam at a first angle from an axis of the mirror set and the second mirror is configured to provide the beam at a second angle from the axis of the mirror set, the beam providing an output after reflection by the second mirror. Movement of the mirror set parallel to the axis results in a parallel shift of the output along the beam and movement of the mirror set perpendicular to the axis results in a perpendicular shift of the output perpendicular to the beam.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Systems and methods for providing variable spot size and variable focus at a substrate are described. Sets of variable focal length lenses can be added to an alignment system to allow for adjustment of the spot size and focus. A variable focal length lens is a liquid lens that is tunable based on application of voltage across the lens. Toggling the voltage changes the water-oil interface in the liquid lens, which in turn changes the direction of light passing through. For example, turning on the voltage across the lens shifts the light output direction to converging at a focal point. As a result, variable focal length lenses provide adjustment to compensate for the fixed spot size and focus shortcomings of the prior art. Furthermore, variable focal length lenses can also be applied to compensate for spot shift and higher order diffraction orders.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
Cloin, Christian Gerardus Norbertus Hendricus Marie
Yakunin, Andrei Mikhailovich
Abrégé
A lithographic patterning device contamination control assembly comprising a support structure configured to support a patterning device floating with respect to ground, a masking apparatus configured to selectively mask the lithographic patterning device, the masking apparatus being connected to ground, a gas supply and an ionizer, the gas supply being configured to supply gas to the ionizer, and the ionizer being configured to convert the gas to a quasi-neutral plasma which is located in a region between the masking apparatus and the lithographic patterning device.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
64.
FLUID HANDLING SYSTEM, METHOD AND LITHOGRAPHIC APPARATUS
A fluid handling system for a lithographic apparatus, wherein the fluid handling system is configured to confine immersion liquid to a liquid confinement space between a part of a projection system and a surface of a substrate in the lithographic apparatus wherein a radiation beam projected from the projection system can irradiate the surface of the substrate by passing through the immersion liquid, the fluid handling system including a damper arranged between a first extraction member and a second extraction member both configured to extract fluid, wherein the damper is configured to support a meniscus of the immersion liquid between a surface of the damper and the surface of the substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
65.
MACHINE LEARNING BASED SUBRESOLUTION ASSIST FEATURE PLACEMENT
A method for training a machine learning model to generate a characteristic pattern, the method includes obtaining training data associated with a reference feature in a reference image. The training data includes (i) location data of each portion of the reference feature, and (ii) a presence value indicating whether the portion of the reference feature is located within a reference assist feature generated for the reference feature. The method includes training the machine learning model to predict a presence value based on the actual presence value in the training data. The predicted presence value indicates whether a portion of a feature (e.g., a skeleton point on a skeleton of a contour of the feature) is to be covered by an assist feature. The training is performed based on the training data such that a metric between a predicted presence value and the presence value is minimized.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
66.
DUAL COMB RADIATION SOURCE AND HETERODYNE DETECTION FOR OVERLAY METROLOGY SYSTEMS AND METHODS
Dual comb radiation sources and heterodyne detection for overlay metrology are described. A dual comb radiation source is configured to irradiate a metrology target with first radiation and second radiation. The first radiation and the second radiation have different repetition rates so the radiation signals can pass through each other. A detector receives diffracted radiation and generates a detection signal. For overlay determination, the first radiation irradiates the metrology target and the second radiation is used as a reference. The detector performs heterodyne detection of interference between different corresponding portions of the first radiation diffracted by the metrology target and the second radiation to provide a spectral response of an amplitude and phase of the diffracted radiation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
67.
A METHOD OF MANUFACTURING A HOLLOW CORE CANE FOR USE IN MANUFACTURING A HOLLOW-CORE PHOTONIC CRYSTAL FIBER
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. (Pays‑Bas)
Inventeur(s)
Lagler, Josef
Bergler, Michael, Sebastian
Frosz, Michael, Henoch
Abrégé
A method of manufacturing a hollow core cane, the method comprising: assembling a preform comprising a jacket with a hollow inner structure, wherein a plurality of capillaries are located within the hollow inner structure, the preform having a first end and a second end; creating a tapered portion of the preform at the first end; slicing the preform within the tapered portion to thereby create a sliced end of the preform and expose cavities of the plurality of capillaries and the hollow inner structure; inserting a pressurization tube into one or more of the cavities at the sliced end of the preform; sealing the least one pressurization tube within the one or more cavities with a sealing agent; coupling the least one pressurization tube to a pressure connector; and drawing a hollow core cane from the preform whilst providing pressure to the one or more cavities using the pressure connector.
A method is presented for generating, using a neural network, predicted metrology data of a patterned portion. The neural network comprises an input network and an output network. The input network comprises a common input model and a specific input model, wherein the common input model has been trained by a process in which the common input model processes data based on training metrology data generated by a plurality of metrology systems, and the specific input model is specific to a first metrology system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
69.
METHOD FOR CALIBRATING AN OPTICAL MEASUREMENT SYSTEM AND SYSTEM ADAPTED TO IMPLEMENT THE METHOD
The present disclosure provides a method for calibrating an optical measurement system involving radiation interference, the method comprising the steps of: determining an error of the optical measurement system during a first measurement, wherein a target of the optical measurement system is tilted in one or more degrees of freedom; defining parameters of an error model function based on the first measurement; determining an error of the optical measurement system during at least one second measurement, wherein the at least one second measurement comprises fewer data points than the first measurement; and updating a subset of the parameters of the error model function to define an updated error model function based on the at least one second measurement.
G01B 9/02055 - Réduction ou prévention d’erreursTestÉtalonnage
G01B 21/04 - Dispositions pour la mesure ou leurs détails, où la technique de mesure n'est pas couverte par les autres groupes de la présente sous-classe, est non spécifiée ou est non significative pour mesurer la longueur, la largeur ou l'épaisseur en mesurant les coordonnées de points
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
70.
SYSTEMS AND METHODS OF MEASUREMENT APPARATUS FABRICATION
An apparatus includes a plurality of bonded substrates. The plurality of bonded substrates form one or more measurement devices. Each measurement device includes at least one gas inlet. The gas inlet is coupled to a plurality of flow restrictions, which are coupled to either a reference chamber or a measurement chamber. The reference chamber is coupled to a reference nozzle and the measurement chamber is coupled to a measurement nozzle. One or more pressure sensors are configured to measure and/or infer differential pressure between the reference chamber and the measurement chamber. Each measurement device can have a total internal volume of less than about 15 mm3.
G01B 13/12 - Dispositions pour la mesure caractérisées par l'utilisation de fluides pour objets ou des ouvertures espacés
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
71.
SYSTEMS AND METHODS OF DEFECT DETECTION BY VOLTAGE CONTRAST IMAGING
Systems and methods of detecting a defect in a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles and a controller including circuitry configured to irradiate a region of a sample comprising a plurality of features with a first dosage of charged particles of the primary charged-particle beam; inspect the plurality of features using a second dosage of the charged particles of the primary charged-particle beam, acquire an image of the inspected plurality of features; and determining whether there is a defect based on a gray level value of a feature of the plurality of features, wherein the first dosage is smaller than a saturation dosage, and wherein the saturation dosage comprises a total number of charged particles exceeding a charge storage capacity of the feature.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01R 31/307 - Test sans contact utilisant des faisceaux électroniques de circuits intégrés
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
72.
IMPROVEMENTS TO LITHOGRAPHIC METHODS AND APPARATUS
A method for determining one or more parameters for an imaging system that is for forming an image of an object on a substrate is disclosed. The method comprises determining a value of one or more movement parameters of at least one optical element of the imaging system during the formation of the image. The one or more movement parameters are such that at least one degree of freedom of the at least one optical element has a non-zero acceleration during at least part of the formation of the image. The value of the one or more movement parameters is determined in dependence on an impact on imaging performance that would be achieved by a deformation of an optical surface of the at least one optical element caused when the at least one optical element moves according to the determined value of the one or more movement parameters.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method for calibrating illumination optics is disclosed. The illumination optics comprises: a first optical component comprising a two-dimensional array of independently movable reflective optical elements which is arranged to receive radiation from a radiation source; and a second optical component comprising a two-dimensional array of independently movable reflective optical elements and which is arranged to receive radiation from the first optical component and to direct it to an illumination region. The method comprises at least one calibration process. Each calibration process comprises: using the first optical component to direct radiation to a subset of the optical elements of the second optical component; receiving a portion of radiation reflected by the subset of the optical elements of the second optical component; and determining, from said reflected portion of radiation, at least one quantity that is indicative of an orientation of the subset of the optical elements.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A object chuck, comprising: a first body having mounts enabling it to be operatively driven by one or more motors, the first body being subjected to thermal-mechanical deformations and acceleration loads as a result of being driven; a second body configured to support an object clamp; and joints coupling the first body with the second body, the joints reducing the thermal-mechanical deformations and the acceleration loads from being transmitted from the first body to the second body.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
75.
METHOD OF PREDICTING AN ON PRODUCT EFFECT OF A WAFER LOAD GRID
Disclosed is a method of predicting an on-product parameter of interest data component attributable to physical interaction between a substrate and a substrate support. The method comprises obtaining inline on-product data relating to a measurement of said substrate; removing non-relevant components of said inline on-product data from said inline on-product data to obtain processed inline on-product data, said non-relevant components comprising components of said inline on-product data not attributable to the wafer load grid and/or which are correctable; determining at least one performance indicator describing a variation of the processed inline on-product data; and applying at least one scaling factor to said at least one performance indicator to obtain said on-product parameter of interest data component; the at least one scaling factor having been determined from a characteristic on- substrate wear pattern being representative for said physical interaction between substrate and substrate support.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06Q 10/20 - Administration de la réparation ou de la maintenance des produits
76.
CALIBRATION SUBSTRATE, METHOD TO DETERMINE AN OFFSET CORRECTION FOR A SUBSTRATE TO BE LOADED ON A SUBSTRATE SUPPORT, COMBINATION OF A SUBSTRATE SUPPORT AND A CALIBRATION SUBSTRATE, AND SUBSTRATE HANDLING APPARATUS
The invention provides a calibration substrate for determining an offset correction for a substrate to be loaded on a substrate support, the substrate support comprising a plurality of burls to support the substrate, the plurality of burls comprising edge supporting burls to support an edge area of the substrate, wherein a support side of the calibration substrate to be supported on the plurality of burls is provided with a height profile comprising one or more ridges, wherein, when the calibration substrate is correctly centered on the substrate support, the one or more ridges of the height profile are arranged close to a number of edge supporting burls.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
77.
VIBRATION CORRECTION FOR INTERFEROMETRIC OR HOLOGRAPHIC METROLOGY
Interferometric or holographic metrology systems may be used to determine overlay, alignment, and/or other metrics. Light scattered into different diffraction orders is detected by a first radiation sensor, together with two reference beams. The reference beams are carefully matched to two illumination paths from the two sources, such that a total interference pattern forms a hologram that encodes measurement information. Computational processing of the hologram determines metrology values. However, vibrations from metrology system stage settling and/or other sources cause path length shifts in the diffracted radiation. This negatively affects sensor performance. Advantageously, a second radiation sensor having a relatively higher frame rate is used to measure a phase shift from vibrations in near-real-time and make corrections for the vibrations.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A substrate alignment system, comprising: a fixed support; a plurality of detectors; a plurality of detector holders, each of the detector holders configured to hold an associated one of the detectors; a plurality of intermediate supports, each intermediate support operatively disposed between an associated one of the detector holders and the fixed support; a plurality of flexures, the fixed support and each intermediate support having at least one of the flexures therebetween, and each intermediate support and the associated one of the detector holders having at least one of the flexures therebetween; and a plurality of actuators, each of the actuators configured to effect relative positioning between the detectors by moving an associated one of the intermediate supports or the associated one of the detector holders, the relative positioning causing flexing of at least one of the flexures.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
09 - Appareils et instruments scientifiques et électriques
37 - Services de construction; extraction minière; installation et réparation
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Semiconductor manufacturing machines and semiconductor
machinery. Electronic imaging hardware and software in the field of
inspection of semiconductor materials, namely, semiconductor
wafers and reticles; computer hardware and software for
inspection of semiconductor materials, namely, semiconductor
wafers and reticles. Machinery maintenance and repair in the field of
semiconductor industry; installation of semiconductor
machines and semiconductor instruments and apparatus;
installation of machines, instruments and apparatus for the
manufacture of semiconductors. Technological supervision and inspection in the field of
quality control of semiconductor wafers and reticles.
Disclosed is a metrology method. The method comprises illuminating a target comprising one or more sub-targets on a substrate using underfilled illumination such that an illumination beam profile underfills each of said one or more sub-targets; capturing scattered radiation resultant from said illuminating the target; imaging the scattered radiation at a detection image plane to obtain an image; and determining a parameter of interest from the imaged scattered radiation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
81.
METHOD FOR RULE-BASED RETARGETING OF TARGET PATTERN
A method for generating a retargeted pattern for a target pattern to be printed on a substrate. The method includes obtaining (i) the target pattern comprising at least one feature, the at least one feature having geometry including a first dimension and a second dimension, and (ii) a plurality of biasing rules defined as a function of the first dimension, the second dimension, and a property associated with features of the target pattern within a measurement region; determining values of the property at a plurality of locations on the at least one feature of the target pattern, each location surrounded by the measurement region; selecting, from the plurality of biasing rules based on the values of the property, a sub-set of biases; and generating the retargeted pattern by applying the selected sub-set of biases to the at least one feature of the target pattern.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
A system for die bonding comprising a donor stage configured to accept one or more donor dies and configured to move the one or more donor dies to different locations; an acceptor stage configured to provide one or more acceptor positions; a measurement system configured to measure a position of the one or more donor dies relative to the donor stage and configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and a processor system configured to drive, based on the measured position of the one or more dies and/or measured position of the one or more acceptor positions, at least the donor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
The invention provides a masking module for use in a lithographic apparatus. The masking module comprises a movable masking member and a masking actuator for moving the masking member along a first linear direction within a masking movement range. The movable masking member is configured to block at least part of a radiation beam. The masking actuator comprises: - a rotary driven member configured to rotate around a rotational axis; - a reciprocal member connected to the masking member via a reciprocal member connection, wherein the reciprocal member is configured to perform a reciprocating movement along the first linear direction; - a linkage device connected to the reciprocal member via a reciprocal linkage connection and connected to the rotary driven member via a rotary linkage connection which connects the linkage device to the rotary driven member at a linkage position that is spatially distant from the rotational axis.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Disclosed is a coarse positioning apparatus for a stage apparatus, the coarse positioning apparatus comprising: at least one gas spring, each said at least one gas spring comprising a piston; and at least one electromagnetic actuator; wherein said at least one gas spring and said at least one electromagnetic actuator are operable to each apply respective complementary forces to said stage apparatus so as to accelerate said stage apparatus for coarse positioning of said stage apparatus, and wherein at least said gas spring is coupled to said stage apparatus throughout each full stroke of said stage apparatus.
A method to provide a model-assisted inline wafer-level inspection during high volume manufacturing is disclosed. More particularly, a method for using a computational model to generate fingerprint wafer defect maps and then guide wafer selection for inline inspection is disclosed. A computational probability prediction model is disclosed to generate defective die probability estimates with improved accuracy and versatility to guide different wafers for inspection.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
86.
SYSTEMS, METHODS, AND SOFTWARE FOR PHASE-BASED ALIGNMENT SENSORS
Disclosed is a metrology system having an optical module configured to receive signals from a target of interest. The optical module includes phase shifting optics configured to displace at least a portion of the signals such that a phase shift in the signals is introduced. Also disclosed is a metrology system that includes an array of phase masks configured to receive signals having multiple wavelengths. The array of phase masks provides dedicated phase retardances to the multiple wavelengths such that the signals passing through the array of phase masks combine into a single wavelength signal having discrete phase components corresponding to the multiple wavelengths.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G01N 21/956 - Inspection de motifs sur la surface d'objets
87.
SYSTEMS, METHODS, AND SOFTWARE FOR MODEL-BASED COMBINED ALIGNMENT AND OVERLAY METROLOGY
Disclosed are methods, systems, and computer programs for improved metrology. One method of metrology includes obtaining first signals generated by a first sensor measuring an alignment (AL) mark on a substrate and obtaining second signals generated by a second sensor measuring an overlay (OVL) mark on the substrate. An OVL of the substrate is determined by using 5 combined information derived from the first signals and the second signals.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
88.
MODE CONTROL OF PHOTONIC CRYSTAL FIBER BASED BROADBAND RADIATION SOURCES
A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01M 11/00 - Test des appareils optiquesTest des structures ou des ouvrages par des méthodes optiques, non prévu ailleurs
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
A broadband radiation source device configured for generating a broadband output radiation upon receiving pump radiation, the device including: a hollow-core photonic crystal fiber (HC-PCF) including at least one structurally varied portion having at least one structural parameter of the HC-PCF varied with respect to one or more main portions of the HC-PCF, wherein the at least one structurally varied portion includes at least a structurally varied portion located downstream of a position along the length of the HC-PCF where the pump radiation will be spectrally expanded by a modulation instability dominated nonlinear optical process, and wherein the at least one structurally varied portion is configured and located such that the broadband output radiation includes wavelengths in the ultraviolet region.
G02F 1/365 - Optique non linéaire dans une structure de guide d'ondes optique
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
An optical alignment system including an illumination system configured to condition a radiation beam to form a first off-axis monopole, a marker configured to diffract the first off-axis monopole to form zeroth and first diffraction orders, a projection system configured to collect the zeroth and first diffraction orders and form an image of the marker, and a sensor apparatus configured to detect the image of the marker.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Methods, systems, and computer software for predicting after-etch profiles of features at varying depths. A method can include accessing after-development resist profiles of features. The method can also include applying an etch bias model on the after-development resist profiles to obtain the after-etch profiles, where the etch bias model correlates an etch bias with an etch depth.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A new actuator comprises: a first member; a second member; an actuation mechanism; and a damping system. The actuation mechanism is configured to move the second member relative to the first member. The damping system comprises: at least one magnet disposed on one of the first and second members; and at least one conductor disposed on the other one of the first and second members. The at least one magnet and the at least one conductor are arranged such that when the second member moves relative to the first member a current is induced in the at least one conductor that acts to damp said movement. The new actuator has particular application for arrangements wherein there would be little or no damping of movement of the second member relative to the first member without the magnet and the conductor. The actuator may comprise a micro-electromechanical system (MEMS).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 27/64 - Systèmes pour donner des images utilisant des éléments optiques pour la stabilisation latérale et angulaire de l'image
There is provided an illumination uniformity correction apparatus for use in an illumination system comprising at least a first and a second transmissive correction plate. The transmissive correction plates are arranged to be moveable relatively to each other. At least one of the at least first and second transmissive correction plates comprising a varying parameter profile configured to make a local angular redistribution of radiation transmitted through said at least one transmissive correction plate.
An object support comprising a generally planar body having a first surface and having a second surface opposite to the first surface, wherein a first set of burls extend from the first surface and a second set of burls extend from the second surface, the first set of burls having a higher density than the second set of burls, and wherein a layer is provided at distal ends of at least some of the second set of burls, the layer having a static water contact angle of at least 70˚.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
95.
SYSTEMS AND METHODS FOR EVALUATING DATA FOR TRAINING MACHINE-LEARNING MODELS
Improved systems and methods for constructing a machine-learning model associated with lithography are disclosed. The method may include accessing a first set of data comprising metrology data, training a machine-learning model iteratively based on the first set of data, the machine-learning model associated with a lithography process, obtaining information generated by the machine- learning model from each of multiple iterations during the training, and identifying outlier data from the first set of data based on the obtained information.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Systems and methods for transiently inspecting transistors. Systems and methods include providing a beam of charged or non-charged particles to a first pad communicatively coupled to a capacitor to provide a supply voltage to the capacitor and an inverter chain; scanning a second pad with the beam; scanning a third pad with the beam; and determining a time delay based on detected signals from the scanning of the second and third pads, wherein the second and third pads are communicatively coupled to at least one inverter of the inverter chain.
G01R 31/303 - Test sans contact de circuits intégrés
G01R 31/307 - Test sans contact utilisant des faisceaux électroniques de circuits intégrés
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
97.
METHODS OF MITIGATING CROSSTALK IN METROLOGY IMAGES
Disclosed is a method of determining an orthonormalized structure of interest reference image. the orthonormalized structure of interest reference image for applying to a measured image of the structure of interest to correct for the effect of crosstalk from at least one nuisance structure. The method comprises determining a structure of interest reference image based on knowledge of the structure of interest; determining at least one nuisance structure reference image based on knowledge of the at least one nuisance structure; and orthonormalizing the structure of interest reference image to the at least one nuisance reference image to obtain the orthonormalized structure of interest reference image.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06T 5/50 - Amélioration ou restauration d'image utilisant plusieurs images, p. ex. moyenne ou soustraction
A method of training an inference model to determine one or more parameters of a product of a fabrication process from measurements of the product. The method includes obtaining a dataset of measurements of one or more products of the fabrication process, each of the measurements including an array of values obtained by measuring a corresponding one of the products. The method further includes selecting a proper subset of the dataset for use in training the inference model, the subset selected by applying an optimization procedure to an objective function providing a measure of differences between each measurement in the dataset and corresponding reproduced values of the measurements obtained using a reproduction function having a domain including the measurements in the subset and excluding the measurements not in the subset. The method also includes training the inference model using the proper subset of the dataset.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A charged particle-optical assembly configured to direct a plurality of beams of charged particles in a beam grid towards a sample location, the charged particle-optical assembly including: a planar charged particle-optical element configured to operate at a voltage on charged particle beams of a beam grid, the charged particle-optical element including a plurality of apertures for the paths of different beams of the beam grid; a conductive body electrically connected to the charged particle-optical element, wherein a recess is defined within the conductive body and is configured to provide a field free volume for insertion of an electrical coupling to electrically connect the charged particle-optical element via the electrical coupling with an electrical power source; and an electrical insulator covering at least part of a surface of the conductive body, the surface facing away from the charged particle-optical element.
Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
