A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
Exemplary methods of packaging a substrate may include rotationally aligning a substrate to a predetermined angular position. The methods may include transferring the substrate to a metrology station. The methods may include measuring a topology of the substrate at the metrology station. The methods may include applying a first chucking force to the substrate to flatten the substrate. The methods may include generating a mapping of a die pattern on an exposed surface of the substrate. The methods may include transferring the substrate to a printing station. The methods may include applying a second chucking force to the substrate to flatten the substrate against a surface of the printing station. The methods may include adjusting a printing pattern based on the mapping of the die pattern. The methods may include printing the printing pattern on the exposed surface of the substrate.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes an inner region having a pattern formed in a top surface thereof, the pattern including a plurality of substrate support features separated by a plurality of venting channels. The susceptor includes a rim surrounding and coupled to the inner region, wherein the inner region is recessed relative to the rim to form a recessed pocket configured to receive a substrate. The susceptor includes a plurality of bumps extending radially inward from an inner diameter of the rim, the plurality of bumps configured to contact an outer edge of a substrate supported by the plurality of substrate support features for positioning the substrate within the recessed pocket.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
5.
SUBSTRATE CARRIER DETECTION USING CONTACTLESS COMMUNICATION
A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including receiving a signal from a reader of a contactless communication system integrated within a load port of an electronic device processing system, determining, based on the signal, whether a substrate carrier of the electronic device processing system is detected on the load port, wherein each substrate carrier of the electronic device processing system is associated with a respective tag of the contactless communication system, and in response to determining that a substrate carrier of the electronic device processing system is detected on the load port, preventing another substrate carrier from being placed on the load port.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
6.
METAL TREATMENT ON METAL SILICIDE FOR CMOS DEVICES
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structure having a p-type semiconductor region for a p-type metal oxide semiconductor (p-MOS) device, the cavity shaping process comprising forming a first cavity in an exposed surface of the p-type semiconductor region, performing a first selective deposition process to form a first cavity contact, selectively in the first cavity, and performing a metal treatment process on the formed first cavity contact, to remove oxides at interfaces of the first cavity contact with the first cavity.
A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
8.
DIGITAL LITHOGRAPHY APPARATUS WITH AUTOFOCUS POSITION CONTROL AND METHODS OF USE THEREOF
Embodiments of the disclosure relate to digital lithography system and related methods, the system including at least one light source configured to emit a light beam onto a substrate via a lens, at least one image sensor, configured to detect a reflected light beam from the substrate via the lens, at least one motor configured to move the lens to focus the light beam onto the substrate, and a controller in communication with the at least one light source, the at least one image sensor and the at least one motor, wherein the controller is to actuate the at least one motor to move the lens in response to at least one signal from the at least one image sensor.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
9.
METHOD OF MANUFACTURING A PLURALITY OF OPTICAL DEVICES AND OPTICAL DEVICE
An optical device comprising a substrate with a front surface, a back surface and a circumferential side surface is described. At least one portion of an edge of the front surface has a texturization, wherein recesses of the texturization are filled with a light-absorbent material. The circumferential side surface is free of light-absorbent material. Further, a method of manufacturing a plurality of optical devices is described
A fluid assembly includes a base and at least one first device. The base includes a single-piece body including a base outlet, a base inlet, and a first interface including a first interface inlet and a first interface outlet. The base also includes a first flow path segment formed within the single-piece body that extends from the base inlet to the first interface outlet. The base also includes a second flow path segment formed within the single-piece body that extends from first interface inlet. The base also includes a ground path disposed within the single-piece body. The first device is attachable to the first interface to fluidly connect a first device inlet to the first interface outlet and a second device outlet to the second interface inlet.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
F16K 27/02 - Structures des logementsMatériaux utilisés à cet effet des soupapes de levage
11.
MULTIDIRECTIONAL ILLUMINATION FOR HYBRID BONDING DEFECT DETECTION
An optical inspection system for pre-bonding inspection system includes a stage on which a sample to be inspected is placed, a sensor, optical assemblies, each including an optical head having optics to direct a sample field-of-view (FOV) to a portion of the sample, a first light source configured to illuminate the sample at a first oblique angle, a second light source configured to illuminate the sample at a second oblique angle, a focusing lens to focus a first optical image of the portion of the sample generated by the first light source, and a second optical image of the portion of the sample generated by the second light source onto a segment of the sensor, and a controller configured to combine the first optical image and the second optical image generated by each optical assembly, and generate a map of point defects on the sample.
A chemical mechanical polishing chamber may include a platen disposed within the chemical mechanical polishing chamber, the platen configured to support a polishing pad. The chamber may also include a slurry delivery arm configured to deliver a slurry to the polishing pad during a chemical mechanical polishing process. The chamber may include an arm may include one or more brackets, mechanically attached to an internal side of the chemical mechanical polishing chamber and positioned over the platen. The chamber may include a plurality of nozzles configured to deliver a gas to the polishing pad, the plurality of nozzles mechanically attached to the one or more brackets of the arm, each of the plurality of nozzles oriented such that an air gap is disposed between adjacent nozzles of the plurality of nozzles such that air may be pulled from the air gap and propelled with the gas towards the polishing pad.
Embodiments of the disclosure include a method of forming a gate-all-around (GAA) contact structure on a semiconductor substrate. The method will include removing material from surfaces of a feature formed in a surface of a substrate that includes a plurality of features that each include a plurality of source/drain contact surfaces, selectively forming a reaction product material over a surface of each of the plurality of source/drain contact surfaces, heating the substrate to a first temperature to remove the reaction product material from the surface of each of the plurality of contacts, selectively forming a first metal layer on the surface of each of the plurality of contacts, selectively forming a second metal layer on the first metal layer, and filling the feature with a conductor material, wherein the conductor material comprises tungsten (W) or molybdenum (Mo).
Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.
A waveguide combiner including a first substrate, a second substrate, and a wavelength selective film, wherein the wavelength selective film is disposed between the first substrate and the second substrate, the wavelength selective film is operable to reflect a red light, refract and transmit a blue light, and refract and transmit a green light.
A first structure for semiconductor devices having a dielectric film on the top surface can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The top surface of the dielectric film of the first structure can be hybrid bonded to a dielectric layer of a second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be different dielectrics. In this way, the hybrid bonding of the two structures includes the hybrid bonding of asymmetric dielectrics.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
17.
METHOD AND MATERIAL SYSTEM FOR HIGH STRENGTH SELECTIVE DIELECTRIC IN HYBRID BONDING
A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface can be used to form devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The dielectric constant of the dielectric film can be about or greater than 8. A device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A technique for forming the structure can include selectively depositing the dielectric film via atomic layer deposition after features filled with metal in a top layer of oxide in an oxide-metal-substrate stack. In order to selectively deposit the dielectric film, the metal may be covered with a polymer which can be burned off. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
18.
SYSTEMS AND METHODS FOR DETECTING MALFUNCTIONS WITHIN A GAS DISTRIBUTION SYSTEM
Systems and methods for monitoring and detecting a malfunction within a gas distribution system are provided. A system may first enable, by a controller, gas flow through a flow path of the gas distribution system. Afterwards, the system may receive data including pressure data and/or flow rate data associated with the flow path of the gas distribution system while gas flow is enabled through the flow path. The system may process the data to determine whether the first flow path of the gas distribution system includes a malfunction. Responsive to determining that the flow path includes a malfunction, the system may determine a relative location of the malfunction within the flow path, with respect to a mass flow controller (MFC) or sensor within the flow path. The system may generate a report indicating whether the flow path includes a malfunction and a relative location of any determined malfunction.
G01F 25/10 - Test ou étalonnage des appareils pour la mesure du volume, du débit volumétrique ou du niveau des liquides, ou des appareils pour compter par volume des débitmètres
G05D 7/06 - Commande de débits caractérisée par l'utilisation de moyens électriques
Disclosed herein is a seal assembly for a substrate processing chamber and a component assembly containing the seal assembly. The seal assembly includes a ring-shaped seal member; a holder disposed radially inward of the ring-shaped seal member; and a retaining mechanism coupling the ring-shaped seal member with the holder. The component assembly includes a first component coupled with a second component via a bonding layer; a groove formed by the first component, the second component, and the bonding layer; and the seal assembly disposed in the groove.
A substrate alignment system that includes (i) an illumination unit that is configured to illuminate an illuminated region that comprises an entire edge of a substrate; (ii) a sensing unit having a field of view that covers the entire edge of the substrate even when the substrate is misaligned, the sensing unit includes a sensor that is preceded by a fish eye lens, the sensor is configured to generate detection signals of the entire edge of the substrate; and (iii) a processing circuit that is configured to process the detection signals and determine whether the substrate is misaligned. A determining that the substrate is misaligned triggers an execution of one or more misalignment correction operation for aligning the substrate.
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande munis de moyens d'éclairage
A substrate support assembly includes a substrate support that is moveable between a raised position, a lowered position below the raised position, and an intermediate position between the raised and lowered positions. A lift pin is disposed in a hole through the substrate support, and is movable vertically with respect to the substrate support. In use, the substrate support assembly transitions between first and second configurations. In the first configuration, the substrate support and the lift pin are coupled such that the lift pin and the substrate support move simultaneously while the substrate support moves between the lowered position and the intermediate position. In the second configuration, the substrate support and the lift pin are decoupled such that the lift pin remains stationary while the substrate support moves between the intermediate position and the raised position.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
22.
METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH
Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si-O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
A chiplet-based system may include a first chiplet mounted to an interposer that is designated as being from one or more trusted sources, a second chiplet mounted to the interposer that is designated as not being from the one or more trusted sources, and an artificial intelligence (AI) accelerator. The AI accelerator may be programmed to monitor a state of the first chiplet, where the state may indicate an anomaly associated with the second chiplet. The AI accelerator may then select an action from a plurality of actions based at least in part on the state of the first chiplet, cause the action to be performed by the chiplet-based system, and execute a reinforcement learning algorithm update the plurality of actions based on a result of the action being performed.
A chemical mechanical polishing chamber may include a platen disposed within the chemical mechanical polishing chamber, the platen configured to support a polishing pad. The chamber may also include a slurry delivery arm configured to deliver a slurry to the polishing pad during a chemical mechanical polishing process. The chamber may include an arm may include one or more brackets, mechanically attached to an internal side of the chemical mechanical polishing chamber and positioned over the platen. The chamber may include a plurality of nozzles configured to deliver a gas to the polishing pad, the plurality of nozzles mechanically attached to the one or more brackets of the arm, each of the plurality of nozzles oriented such that an air gap is disposed between adjacent nozzles of the plurality of nozzles such that air may be pulled from the air gap and propelled with the gas towards the polishing pad.
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 55/02 - Équipement pour refroidir les surfaces abrasives, p. ex. dispositifs d'alimentation en agent de refroidissement
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
25.
GROWTH OF THIN OXIDE LAYER WITH SILICON NITRIDE AND CONVERSION
A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.
The present disclosure generally provides waveguide combiners and methods thereof. The methods include forming a waveguide combiner by disposing a first grating including a first device structure over a first donor substrate. The first grating is transferred from the first donor substrate to a waveguide substrate.
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
Disclosed herein is a seal assembly for a substrate processing chamber and a component assembly containing the seal assembly. The seal assembly includes a ring-shaped seal member; a holder disposed radially inward of the ring-shaped seal member; and a retaining mechanism coupling the ring-shaped seal member with the holder. The component assembly includes a first component coupled with a second component via a bonding layer; a groove formed by the first component, the second component, and the bonding layer; and the seal assembly disposed in the groove.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
28.
MULTIDIRECTIONAL ILLUMINATION FOR HYBRID BONDING DEFECT DETECTION
An optical inspection system for pre-bonding inspection system includes a stage on which a sample to be inspected is placed, a sensor, optical assemblies, each including an optical head having optics to direct a sample field-of-view (FOV) to a portion of the sample, a first light source configured to illuminate the sample at a first oblique angle, a second light source configured to illuminate the sample at a second oblique angle, a focusing lens to focus a first optical image of the portion of the sample generated by the first light source, and a second optical image of the portion of the sample generated by the second light source onto a segment of the sensor, and a controller configured to combine the first optical image and the second optical image generated by each optical assembly, and generate a map of point defects on the sample.
A substrate characterization device including a first roller assembly, a measurement assembly, and a deionizing assembly. A substrate characterization device including a sampling area, a measurement assembly, and a deionizing assembly. A method of characterizing a polymer substrate including maneuvering at least a portion of a polymer substrate to contact a sampling area, removing the at least a portion of the polymer substrate from the sampling area, measuring a surface charge of the sampling area, characterizing the at least a portion of the polymer substrate, informing a deionizing assembly of the characterization of the polymer substrate, and deionizing the sampling area with the deionizing assembly.
The present disclosure generally provides waveguide combiners and methods thereof. The waveguide combiners include a substrate. A first grating is disposed over the substrate. The first grating includes a first device structure. A first coating layer is disposed over the first device structure. A first donor substrate is disposed over the first coating layer. A second grating is disposed over the substrate. The second grating includes a second device structure. A second coating layer is disposed over the second device structure. A second donor substrate is disposed over the second coating layer. An encapsulation layer is disposed over the first grating and the second grating.
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
An ion source with a sputter target located at the end of the ion source is disclosed. The ion source may include an indirectly heated cathode and the sputter target may be disposed on the end opposite the cathode. The ion source may contain one or more side electrodes, wherein at least one of these electrodes is electrically biased relative to the arc chamber. In one embodiment, the second end of the ion source is made of a dopant containing material and serves as the sputter target. In another embodiment, there is an opening in the second end, and an insert is disposed in this opening. The insert is made of a dopant containing material and serves as the sputter target.
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structure having a p-type semiconductor region for a p-type metal oxide semiconductor (p-MOS) device, the cavity shaping process comprising forming a first cavity in an exposed surface of the p-type semiconductor region, performing a first selective deposition process to form a first cavity contact, selectively in the first cavity, and performing a metal treatment process on the formed first cavity contact, to remove oxides at interfaces of the first cavity contact with the first cavity.
Disclosed herein are a gas delivery module, a processing chamber, and a method for depositing a film on a substrate. In one example, a gas delivery module is provided that includes a deposition precision flow device (PFD) flow controller, a carrier PFD flow controller, and a plurality of mass flow controllers (MFCs). The deposition PFD flow controller is configured to control a flow of a deposition gas through a plurality of outlets. The carrier PFD flow controller is configured to control a flow of a carrier gas through a plurality of outlets. The first MFC of the plurality of MFCs includes a first inlet and an outlet. The first inlet of the first MFC is fluidly coupled to a first outlet of the plurality of outlets of the deposition PFD and to a first outlet of the plurality of outlets of the carrier PFD. The second MFC of the plurality of MFCs includes a second inlet and an outlet. The second inlet of the second MFC is fluidly coupled to a second outlet of the plurality of outlets of the deposition PFD and to a second outlet of the plurality of outlets of the carrier PFD. The third MFC of the plurality of MFCs includes a third inlet and an outlet. The third inlet of the third MFC is fluidly coupled to a third outlet of the plurality of outlets of the deposition PFD and to a third outlet of the plurality of outlets of the carrier PFD.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
34.
LI METAL BATTERY CYCLE LIFE IMPROVEMENT BY INTERFACE METAL/DIELECTRIC STACK
Alkali metal containing devices and methods for manufacturing alkali metal containing devices are provided. In one aspect, an anode electrode structure is provided. The anode electrode structure includes a current collector including copper and/or stainless steel, a lithium metal film formed over the current collector, and a protective film stack formed on the lithium metal film. The protective film stack includes a metallic film formed over the lithium metal film and a lithium salt film formed on the metallic film. The metallic film is selected from a bismuth film, a tin film, a silver film, or a combination thereof. The lithium salt film is formed on the metallic film, the lithium salt film selected from lithium sulfides, lithium oxides, lithium halides, lithium chalcogenides, lithium borohydride, or a combination thereof.
A waveguide combiner is provided. The waveguide combiner includes a waveguide combiner substrate. The waveguide combiner provides a plurality of staircase structures disposed on the substrate. Each staircase structure comprises a plurality of staircase steps. Each staircase step has a staircase width that is the same. The plurality of staircase steps have a trim width from an initial staircase step to a final staircase step. The plurality of staircase steps includes a top step having a top width.
Degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. The degas station includes a housing, a magnetic levitation system coupled to the housing configured to levitate and move a carrier within the housing, a first heater assembly and a second heater assembly. The first heater assembly is disposed in the housing. The first heater assembly includes a first support, a first reflector disposed within the housing by the first support, and a first heat source coupled to reflector. The second heater assembly is disposed in the housing above the first heater assembly. The second heater assembly includes a second support, a second reflector disposed within the housing by the second support, and a second heat source coupled to the second reflector. At least one substrate support member is disposed between the first heater assembly and the second heater assembly.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
37.
METHODS AND STRUCTURES FOR HIGH STRENGTH ASYMMETRIC DIELECTRIC IN HYBRID BONDING
A first structure for semiconductor devices having a dielectric film on the top surface can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The top surface of the dielectric film of the first structure can be hybrid bonded to a dielectric layer of a second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be different dielectrics. In this way, the hybrid bonding of the two structures includes the hybrid bonding of asymmetric dielectrics.
A system includes a memory and a processing device, operatively coupled to the memory, to perform operations including receiving a signal from a reader of a contactless communication system integrated within a load port of an electronic device processing system, determining, based on the signal, whether a substrate carrier of the electronic device processing system is detected on the load port, wherein each substrate carrier of the electronic device processing system is associated with a respective tag of the contactless communication system, and in response to determining that a substrate carrier of the electronic device processing system is detected on the load port, preventing another substrate carrier from being placed on the load port.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A fluid assembly includes a base and at least one first device. The base includes a single-piece body including a base outlet, a base inlet, and a first interface including a first interface inlet and a first interface outlet. The base also includes a first flow path segment formed within the single-piece body that extends from the base inlet to the first interface outlet. The base also includes a second flow path segment formed within the single-piece body that extends from first interface inlet. The base also includes a ground path disposed within the single-piece body. The first device is attachable to the first interface to fluidly connect a first device inlet to the first interface outlet and a second device outlet to the second interface inlet.
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 49/00 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
A substrate support assembly includes a substrate support that is moveable between a raised position, a lowered position below the raised position, and an intermediate position between the raised and lowered positions. A lift pin is disposed in a hole through the substrate support, and is movable vertically with respect to the substrate support. In use, the substrate support assembly transitions between first and second configurations. In the first configuration, the substrate support and the lift pin are coupled such that the lift pin and the substrate support move simultaneously while the substrate support moves between the lowered position and the intermediate position. In the second configuration, the substrate support and the lift pin are decoupled such that the lift pin remains stationary while the substrate support moves between the intermediate position and the raised position.
Disclosed herein are methods for direct backside contact formation. In some embodiments, a method may include providing a stack of layers defining a front side and a backside, wherein the front side comprises one or more devices, and forming a plurality of vias in the backside, wherein each via of the plurality of vias extends to a source/drain. The method may further include performing a dopant implant to the backside including into the plurality of vias, wherein the dopant implant is performed at a temperature greater than 300° C., forming a silicide region within each of the source/drains, and forming a backside contact within each of the plurality of vias, wherein the backside contact is formed over the silicide region.
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
The disclosure relates to a target for physical vapor deposition processes. In one embodiment, a physical vapor deposition (PVD) target, includes a monolithic target with a support region partially defined by a process face and radial sidewalls; and a recess within a mounting face of the monolithic target, the recess disposed opposite the process face and extending radially outward of the radial sidewalls.
Devices and methods may include providing a device structure having a shielding layer formed beneath each trench in a MOSFET to protect trench corner breakdown. The method may include providing a device structure comprising an epitaxial layer, a well over the epitaxial layer, and a source layer over the well, and providing a plurality of trenches through the device structure. The method may further include forming a shielding layer in the device structure by directing ions into the plurality of trenches.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
An ion source with a sputter target located at the end of the ion source is disclosed. The ion source may include an indirectly heated cathode and the sputter target may be disposed on the end opposite the cathode. The ion source may contain one or more side electrodes, wherein at least one of these electrodes is electrically biased relative to the arc chamber. In one embodiment, the second end of the ion source is made of a dopant containing material and serves as the sputter target. In another embodiment, there is an opening in the second end, and an insert is disposed in this opening. The insert is made of a dopant containing material and serves as the sputter target.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An apparatus that may be used to allow the rotation of a component that passes through a wall of a vacuum chamber is disclosed. The apparatus includes a rotatable shaft through which the component passes. The rotatable shaft is held in place using a holder, which retains a portion of the rotatable shaft. In some embodiments, the holder is affixed to a plate, which is then affixed to the chamber wall. The plate has an opening which is aligned to the opening in the chamber wall. A portion of the rotatable shaft passes through the opening in the plate and vacuum seals are disposed between the rotatable shaft and the plate. This apparatus may be used to allow use of rotatable components in an ion implanter.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Vertical cell dynamic random-access memory (DRAM) arrays and methods of forming arrays with improved stability and word line resistivity are provided. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels. In addition, arrays include a bridge extending between a first channel of the plurality of channels and a second channel of the plurality of channels, where the first channel is spaced apart from the second channel in a row extending in the second horizontal direction. Arrays include a gate formed around at least a portion of the plurality of channels and the bridge.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
A method of modifying an opening in a mask to achieve desired critical dimensions, the method including performing a pre-implant on the mask to implant the mask with a dopant material, wherein a material of the mask is densified and the opening is enlarged, directing a first radical beam at a first lateral side of the opening to deposit a layer of material on the first lateral side, and directing a second radical beam at a second lateral side of the opening opposite the first lateral side to deposit a layer of material on the second lateral side.
A chiplet-based system may include a first chiplet mounted to an interposer that is designated as being from one or more trusted sources, a second chiplet mounted to the interposer that is designated as not being from the one or more trusted sources, and an artificial intelligence (AI) accelerator. The AI accelerator may be programmed to monitor a state of the first chiplet, where the state may indicate an anomaly associated with the second chiplet. The AI accelerator may then select an action from a plurality of actions based at least in part on the state of the first chiplet, cause the action to be performed by the chiplet-based system, and execute a reinforcement learning algorithm update the plurality of actions based on a result of the action being performed.
G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
G06F 21/73 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information par création ou détermination de l’identification de la machine, p. ex. numéros de série
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
49.
METHOD AND APPARATUS FOR DETECTING DEFECTS IN A PACKAGE
An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having at least parts with a two dimensional (2D) periodic pattern which may include defects, an optical head including optics, a dark-field illuminator configured to illuminate the surface of the sample at an first angle, wherein the first angle is an oblique angle, a bright-field illuminator configured to illuminate the surface at a second angle, a dark-field collection path, a bright-field collection path, and a sensor configured to detect light transmitted from the dark-field illuminator, scattered at the surface of the sample, collected by the optical head, and relayed through the dark-field collection path, and light transmitted from the bright-field illuminator, reflected at the surface of the sample, and relayed through the bright-field collection path.
An electronic device manufacturing system is provided that includes a monitoring system coupled to a tool. The monitoring system comprises a body to mount to a surface of a tool; a vibration detecting sensor disposed in or on the body, the vibration detecting sensor to generate a signal based on a vibration of the surface; a wired communication device disposed in or on the body, wherein in a first configuration the wired communication device is to transmit the signal generated by the vibration detecting sensor to the computer system via a wired connection with the computer system; and a wireless communication device disposed in or on the body, wherein in a second configuration the wireless communication device is to establish a wireless connection with the computer system and to transmit the signal generated by the vibration detecting sensor to the computer system via the wireless connection.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/52 - Commande ou régulation du processus de dépôt
G01H 1/00 - Mesure des vibrations dans des solides en utilisant la conduction directe au détecteur
H04Q 9/00 - Dispositions dans les systèmes de commande à distance ou de télémétrie pour appeler sélectivement une sous-station à partir d'une station principale, sous-station dans laquelle un appareil recherché est choisi pour appliquer un signal de commande ou pour obtenir des valeurs mesurées
Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
52.
METHODS AND STRUCTURES FOR HIGH STRENGTH DIELECTRIC IN HYBRID BONDING
A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface of the structure can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. For example, the dielectric constant of the dielectric film can be about or greater than 7 or 8. A semiconductor device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A dielectric film-oxide-metal-substrate structure can be formed with the dielectric film on the top surface of the stack. A multi-material etch can be used etch features in the dielectric film and the oxide in a dielectric film-oxide-metal-substrate stack. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
Embodiments include a plasma processing apparatus including a chamber with an inner chamber wall. A workpiece support is within the inner chamber wall, the workpiece support for supporting a workpiece in a processing region of the chamber. An ion probe extends through the chamber and inner chamber wall and into a plasma region above the workpiece.
Disclosed herein are a gas delivery module, a processing chamber, and a method for depositing a film on a substrate. In one example, a gas delivery module is provided that includes a deposition precision flow device (PFD) flow controller, a carrier PFD flow controller, and a plurality of mass flow controllers (MFCs). The deposition PFD flow controller is configured to control a flow of a deposition gas through a plurality of outlets. The carrier PFD flow controller is configured to control a flow of a carrier gas through a plurality of outlets. The first MFC of the plurality of MFCs includes a first inlet and an outlet. The first inlet of the first MFC is fluidly coupled to a first outlet of the plurality of outlets of the deposition PFD and to a first outlet of the plurality of outlets of the carrier PFD. The second MFC of the plurality of MFCs includes a second inlet and an outlet. The second inlet of the second MFC is fluidly coupled to a second outlet of the plurality of outlets of the deposition PFD and to a second outlet of the plurality of outlets of the carrier PFD. The third MFC of the plurality of MFCs includes a third inlet and an outlet. The third inlet of the third MFC is fluidly coupled to a third outlet of the plurality of outlets of the deposition PFD and to a third outlet of the plurality of outlets of the carrier PFD.
A digital lithography system includes a stage configured to support a substrate, a bridge disposed above the stage, and a first lithographic processing unit coupled to the bridge. The first lithographic processing unit coupled to the bridge can include a scanning unit, a lithographic exposure unit, and an optical system shared by the scanning unit and the lithographic exposure unit. The scanning unit is to use the optical system to generate measurements of the substrate during a measurement operation, and the lithographic exposure unit is to use the optical system to perform digital lithographic exposure of the substrate using the optical system during an exposure operation.
Embodiments of the present disclosure generally relate to augmented reality (AR) systems. More specifically, embodiments described herein provide for an AR projection system and AR devices having the projection system. In one or more embodiments, an augmented reality device includes a projection system. The projection system includes a light engine. The light engine includes a pixel. The pixel includes an emission surface. A microlens is coupled to the emission surface of the pixel. The projection system further includes a projection lens configured to refract a first light emitted by the pixel. The first light has a first pupil length defined by a distance between a first end and a second end of the first light. The augmented reality device further includes a waveguide including an input coupler configured to incouple the first light at a first bounce length that is equivalent to the first pupil length.
G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie
G02B 6/10 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques
The disclosure relates to a target for physical vapor deposition processes. In one embodiment, a physical vapor deposition (PVD) target assembly, includes a monolithic target with a support region partially defined by a process face and radial sidewalls; and a recess within a mounting face of the monolithic target, the recess disposed opposite the process face and extending radially outward of the radial sidewalls.
Embodiments of the disclosure include a method of forming a gate-all- around (GAA) contact structure on a semiconductor substrate. The method will include removing material from surfaces of a feature formed in a surface of a substrate that includes a plurality of features that each include a plurality of source/drain contact surfaces, selectively forming a reaction product material over a surface of each of the plurality of source/drain contact surfaces, heating the substrate to a first temperature to remove the reaction product material from the surface of each of the plurality of contacts, selectively forming a first metal layer on the surface of each of the plurality of contacts, selectively forming a second metal layer on the first metal layer, and filling the feature with a conductor material, wherein the conductor material comprises tungsten (W) or molybdenum (Mo).
A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.
A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface can be used to form devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The dielectric constant of the dielectric film can be about or greater than 8. A device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A technique for forming the structure can include selectively depositing the dielectric film via atomic layer deposition after features filled with metal in a top layer of oxide in an oxide-metal-substrate stack. In order to selectively deposit the dielectric film, the metal may be covered with a polymer which can be burned off. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/32 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches en utilisant des masques
Embodiments of the present disclosure generally relate to augmented reality (AR) systems. More specifically, embodiments described herein provide for an AR projection system and AR devices having the projection system. In one or more embodiments, an augmented reality device includes a projection system. The projection system includes a light engine. The light engine includes a pixel. The pixel includes an emission surface. A microlens is coupled to the emission surface of the pixel. The projection system further includes a projection lens configured to refract a first light emitted by the pixel. The first light has a first pupil length defined by a distance between a first end and a second end of the first light. The augmented reality device further includes a waveguide including an input coupler configured to incouple the first light at a first bounce length that is equivalent to the first pupil length.
H04N 13/363 - Reproducteurs d’images utilisant des écrans de projection
H04N 13/307 - Reproducteurs d’images pour visionnement sans avoir recours à des lunettes spéciales, c.-à-d. utilisant des affichages autostéréoscopiques utilisant des lentilles du type œil de mouche, p. ex. dispositions de lentilles circulaires
G02B 30/27 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques en fournissant des première et seconde images de parallaxe à chacun des yeux gauche et droit d’un observateur du type autostéréoscopique comprenant des réseaux lenticulaires
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G02B 6/38 - Moyens de couplage mécaniques ayant des moyens d'assemblage fibre à fibre
62.
SYSTEMS AND METHODS FOR DIGITAL LITHOGRAPHY SCAN SEQUENCING
A digital lithography system includes a stage configured to support a substrate, a bridge disposed above the stage, and a first lithographic processing unit coupled to the bridge. The first lithographic processing unit coupled to the bridge can include a scanning unit, a lithographic exposure unit, and an optical system shared by the scanning unit and the lithographic exposure unit. The scanning unit is to use the optical system to generate measurements of the substrate during a measurement operation, and the lithographic exposure unit is to use the optical system to perform digital lithographic exposure of the substrate using the optical system during an exposure operation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
63.
METHODS AND STRUCTURES FOR HIGH STRENGTH DIELECTRIC IN HYBRID BONDING
A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface of the structure can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. For example, the dielectric constant of the dielectric film can be about or greater than 7 or 8. A semiconductor device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A dielectric film-oxide-metal-substrate structure can be formed with the dielectric film on the top surface of the stack. A multi-material etch can be used etch features in the dielectric film and the oxide in a dielectric film-oxide-metal-substrate stack. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.
An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having at least parts with a two dimensional (2D) periodic pattern which may include defects, an optical head including optics, a dark-field illuminator configured to illuminate the surface of the sample at an first angle, wherein the first angle is an oblique angle, a bright-field illuminator configured to illuminate the surface at a second angle, a dark- field collection path, a bright-field collection path, and a sensor configured to detect light transmitted from the dark-field illuminator, scattered at the surface of the sample, collected by the optical head, and relayed through the dark-field collection path, and light transmitted from the bright-field illuminator, reflected at the surface of the sample, and relayed through the bright-field collection path.
An apparatus that may be used to allow the rotation of a component that passes through a wall of a vacuum chamber is disclosed. The apparatus includes a rotatable shaft through which the component passes. The rotatable shaft is held in place using a holder, which retains a portion of the rotatable shaft. In some embodiments, the holder is affixed to a plate, which is then affixed to the chamber wall. The plate has an opening which is aligned to the opening in the chamber wall. A portion of the rotatable shaft passes through the opening in the plate and vacuum seals are disposed between the rotatable shaft and the plate. This apparatus may be used to allow use of rotatable components in an ion implanter.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Methods of manufacturing electronic devices, such as transistors (negative metal–oxide–semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal–oxide–semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.
An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having a two dimensional (2D) periodic pattern and defects, an optical fiber, a transmissive spatial light modulator (SLM), a measurement lens configured to transmit a beam of light transmitted through the transmissive SLM, a camera configured to detect the transmitted beam of light from the measurement lens, and a measuring beam path through which a beam of light from the optical fiber is incident on and reflected at the surface of the sample on the stage, and transmitted to the transmissive SLM, wherein the transmissive SLM is configured to block the beam of light reflected by the 2D periodic pattern on the surface of the sample.
A method for thermally processing an optically nonopaque substrate using radiant energy. In some embodiments, the method includes flipping the optically nonopaque substrate to expose a non-structure side, depositing an opaque thermal layer on the non-structure side of the optically nonopaque substrate where the opaque thermal layer has a uniform thickness, flipping the optically nonopaque substrate to expose the structure side, and thermally processing the optically nonopaque substrate in excess of approximately 900 degrees Celsius. In some embodiments, the opaque thermal layer is comprised of amorphous carbon, multiple layers of amorphous carbon with adjacent layers of the multiple layers having different optical properties, or alternating layers of different materials where a first layer of the alternating layers is comprised of amorphous carbon material and where a second layer of the alternating layers is comprised of amorphous silicon (Si)-based material.
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
69.
DUAL MANUFACTURING PROCESS AND CALIBRATION TO ACHIEVE HIGH ACCURACY THERMOCOUPLE SUBSTRATES
Embodiments herein are generally directed to a system and process for manufacturing temperature measurement devices for use in semiconductor and display manufacturing. A bifurcated thermocouple substrate is provided and includes a primary substrate with a substrate aperture, a secondary substrate disposed within the substrate aperture, and a thermocouple disposed within a thermocouple aperture of the secondary substrate. A method of calibrating a bifurcated thermocouple substrate includes placing a secondary substrate with an embedded thermocouple of a bifurcated thermocouple substrate into a calibrator, heating the calibrator, the secondary substrate, and the thermocouple to a number "n" of temperature points and recording the temperature readings of the calibrator and the thermocouple The method includes then performing a mathematical conversion using the recorded temperature readings, storing using the stored mathematical conversion to correct thermocouple readings during use in a substrate processing chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
70.
FAST SWITCHING GAS CIRCUITS AND PROCESSING CHAMBERS, AND RELATED METHODS AND APPARATUS, FOR GAS STABILIZATION
Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first ratio flow controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second ratio flow controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. The gas circuit further includes a first set of gas lines connected to the first ratio flow controllers, and a second set of gas lines connected to the second ratio flow controllers.
Degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. The method includes magnetically levitating a carrier with a substrate disposed thereon in a first position between a reflector assembly and a heater assembly disposed within a housing of the station. The method further includes moving both the reflector assembly and the heater assembly from a retracted position to an extended position while the carrier is disposed between the reflector assembly and heater assembly. The method further includes degassing the substrate disposed on the carrier with the heater assembly while the reflector assembly and heater assembly are each in the extended position, wherein the degassing includes pumping a purge gas through a gas port formed in at least one of the reflector assembly or the heater assembly towards the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The present disclosure generally provides waveguide combiners and methods thereof. The methods include forming a waveguide combiner by disposing a first grating including a first device structure over a first donor substrate. The first grating is transferred from the first donor substrate to a waveguide substrate.
Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.
G05D 23/19 - Commande de la température caractérisée par l'utilisation de moyens électriques
F27B 17/00 - Fours d'un genre non couvert par l'un des groupes
G01J 5/34 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique en utilisant des détecteurs électriques de radiations en utilisant des condensateurs, p. ex. des condensateurs pyroélectriques
G05B 13/02 - Systèmes de commande adaptatifs, c.-à-d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
G05D 23/27 - Commande de la température caractérisée par l'utilisation de moyens électriques avec l'élément sensible répondant au rayonnement
Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.
F27B 17/00 - Fours d'un genre non couvert par l'un des groupes
F27D 19/00 - Aménagement des dispositifs de commande
F27D 21/00 - Aménagement des dispositifs de surveillanceAménagement des dispositifs de sécurité
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
75.
GRAY TONE UNIFORMITY CONTROL OVER SUBSTRATE TOPOGRAPHY
Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. In one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. The plurality of shots exposes the photoresist layer to an intensity of light emitted from the image projection system. The local transmittance rate of the plurality of shots within an exposure area is varied to form varying step heights in the exposure area of the photoresist layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
C04B 35/12 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde de chrome
C04B 35/14 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base de silice
C04B 35/622 - Procédés de mise en formeTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
77.
OPTICAL SPECTRUM SENSOR WAFER OR ROBOT FOR CHAMBER CONDITION MONITORING
Embodiments disclosed herein include a diagnostic substrate. In an embodiment, the diagnostic substrate comprises a substrate, a circuit board on the substrate, and a spectrometer coupled to the circuit board. In an embodiment, the diagnostic substrate further comprises a processor on the circuit board and communicatively coupled to the spectrometer.
A susceptor includes a plurality of substrate support subsections. The susceptor further includes a vertical-movement component associated with a first substrate support subsection of the plurality of substrate support subsections. The vertical-movement component is configured to vertically move at least a portion of the first substrate support subsection.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A substrate support assembly including a shaft and a susceptor disposed on the shaft. The susceptor is configured to support a substrate in a processing chamber during a substrate processing operation. The substrate support assembly comprises cooling features configured to cool the susceptor at a cooling rate of greater than 2 degrees Celsius per minute subsequent to the substrate processing operation.
A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A sensor can be configured to measure wafer bowing characteristics associated with a bow of a wafer after a first fabrication process is performed on the wafer in a first processing chamber and before a second fabrication process is performed on the wafer in a second processing chamber. A transfer chamber, including the sensor, can be coupled to a first process chamber and a second process chamber. The wafer bowing characteristics can be used by a controller to determine recipe parameters. The recipe parameters can be used by the controller to control environmental conditions in the transfer chamber and/or processing chamber and cause the processing chamber to perform its associated fabrication process using the recipe parameters.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
82.
SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL
Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
An apparatus that includes an end effector for handling and transporting wafers, the end effector including: a base portion having a first end adapted to be attached to a robot; a wafer support platform having a surface to support a wafer, a slidable joint coupling the base portion to the wafer support platform; and a sensor configured to detect when the wafer support platform slides relative to the base portion beyond a predetermined distance.
Methods of semiconductor processing for etching silicon-containing materials to produce high aspect ratio features may include iteratively repeating a protection-etch cycle at least 50 times. The protection-etch cycle may include depositing a protective oxide layer on the sidewalls and the bottom of the feature. Then, the protective oxide layer may be exposed to first plasma effluents under conditions that cause etching at the bottom of the feature to expose the underlying silicon-containing material and deepen the feature. Then, the remaining protective oxide layer may be densified at the sidewalls of the feature. Then, the second protective oxide layer and the silicon-containing material may be exposed to second plasma effluents under conditions that cause concurrent (a) etching the silicon-containing material and the protective oxide layer and (b) depositing oxide at the protective oxide layer, which may deepen the feature while maintaining the protective oxide layer at the sidewalls of the feature.
Integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. In some embodiments, for example, the integrated substrate processing system may include an EFEM and a processing tool enclosure that are coupled together to form an integrated processing environment. The integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (RAM), in order to do so. In some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the EFEM and/or processing tool enclosure.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
A substrate support assembly including a shaft and a susceptor disposed on the shaft. The susceptor is configured to support a substrate in a processing chamber during a substrate processing operation. The substrate support assembly comprises cooling features configured to cool the susceptor at a cooling rate of greater than 2 degrees Celsius per minute subsequent to the substrate processing operation.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
An apparatus that includes an end effector for handling and transporting wafers, the end effector including: a base portion having a first end adapted to be attached to a robot; a wafer support platform having a surface to support a wafer; a slidable joint coupling the base portion to the wafer support platform; and a sensor configured to detect when the wafer support platform slides relative to the base portion beyond a predetermined distance.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
Embodiments of the present disclosure provide a passivation source apparatus for passivating a material deposited on a substrate is provided. The apparatus includes a radical source capable of generating radicals from at least one precursor gas, a precursor gas inlet coupled to the radical source, the precursor gas inlet providing the at least one precursor gas to the radical source, and a radical outlet coupled to the radical source. The radical outlet substantially faces a fresh surface of the material and is capable of passivating the material by directing the radicals to the fresh surface of the material.
Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
90.
SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL
Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
91.
TEMPERATURE CONTROL SYSTEM WITH FLAMMABLE HEAT TRANSFER FLUID
A system includes a closed loop configured to flow a heat transfer fluid to regulate temperature of a process tool. The heat transfer fluid includes a flammable or combustible fluid. The system further includes a temperature control unit configured to receive the heat transfer fluid and regulate temperature of the heat transfer fluid. The system further includes a plurality of sensor configured to measure one or more properties of the heat transfer fluid. The system further includes a controller configured to determine a fault in the closed loop based on sensor data received from the plurality of sensors and to further cause a corrective action responsive to determining the fault.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
92.
FAST SWITCHING GAS CIRCUITS AND PROCESSING CHAMBERS, AND RELATED METHODS AND APPARATUS, FOR GAS STABILIZATION
Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. The valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. The gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
93.
MIRROR FOLDED ILLUMINATION FOR COMPACT OPTICAL METROLOGY SYSTEM
Embodiments of the present disclosure generally relate to metrology systems and metrology methods to measure waveguides for image quality standards. In at least one embodiment, an optical device metrology system includes a stage, a body, and a light engine positioned within the body and mounted above the stage. The light engine includes, a light source, a fold mirror angled relative to the light source, the fold mirror is configured to turn a light beam toward the stage, one or more lenses or arrays positioned between the fold mirror and the stage, and a projection lens positioned between the one or more lenses or arrays and the stage. The system further includes, a first detector positioned within the body and mounted above the stage adjacent to the light engine configured to receive the projected light beam projected upwardly from the stage.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
94.
DUAL MANUFACTURING PROCESS AND CALIBRATION TO ACHIEVE HIGH ACCURACY THERMAL COUPLE SUBSTRATES
Embodiments herein are generally directed to a system and process for manufacturing temperature measurement devices for use in semiconductor and display manufacturing. A bifurcated thermocouple substrate is provided and includes a primary substrate with a substrate aperture, a secondary substrate disposed within the substrate aperture, and a thermocouple disposed within a thermocouple aperture of the secondary substrate. A method of calibrating a bifurcated thermocouple substrate includes placing a secondary substrate with an embedded thermocouple of a bifurcated thermocouple substrate into a calibrator, heating the calibrator, the secondary substrate, and the thermocouple to a number “n” of temperature points and recording the temperature readings of the calibrator and the thermocouple The method includes then performing a mathematical conversion using the recorded temperature readings, storing using the stored mathematical conversion to correct thermocouple readings during use in a substrate processing chamber.
H10N 10/17 - Dispositifs thermoélectriques comportant une jonction de matériaux différents, c.-à-d. dispositifs présentant l'effet Seebeck ou l'effet Peltier fonctionnant exclusivement par les effets Peltier ou Seebeck caractérisés par la structure ou la configuration de la cellule ou du thermocouple constituant le dispositif
Degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. The degas station includes a housing, a magnetic levitation system coupled to the housing configured to levitate and move a carrier within the housing, a first heater assembly and a second heater assembly. The first heater assembly is disposed in the housing. The first heater assembly includes a first support, a first reflector disposed within the housing by the first support, and a first heat source coupled to reflector. The second heater assembly is disposed in the housing above the first heater assembly. The second heater assembly includes a second support, a second reflector disposed within the housing by the second support, and a second heat source coupled to the second reflector. At least one substrate support member is disposed between the first heater assembly and the second heater assembly.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
The present disclosure generally provides waveguide combiners and methods thereof. The waveguide combiners include a substrate. A first grating is disposed over the substrate. The first grating includes a first device structure. A first coating layer is disposed over the first device structure. A first donor substrate is disposed over the first coating layer. A second grating is disposed over the substrate. The second grating includes a second device structure. A second coating layer is disposed over the second device structure. A second donor substrate is disposed over the second coating layer. An encapsulation layer is disposed over the first grating and the second grating.
A waveguide combiner is provided. The waveguide combiner includes a waveguide combiner substrate. The waveguide combiner provides a plurality of staircase structures disposed on the substrate. Each staircase structure comprises a plurality of staircase steps. Each staircase step has a staircase width that is the same. The plurality of staircase steps have a trim width from an initial staircase step to a final staircase step. The plurality of staircase steps includes a top step having a top width.
A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines an amount of gas loss within the system due to the abatement sub-system. The master controller determines a flow setpoint for the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers based on the identified flow ratio setpoint and the determined amount of gas loss. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G05D 11/13 - Commande du rapport des débits de plusieurs matériaux fluides ou fluents caractérisée par l'usage de moyens électriques
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
B23K 26/03 - Observation, p. ex. surveillance de la pièce à travailler
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
B23K 26/08 - Dispositifs comportant un mouvement relatif entre le faisceau laser et la pièce
B23K 26/12 - Travail par rayon laser, p. ex. soudage, découpage ou perçage sous atmosphère particulière, p. ex. dans une enceinte
B23K 26/352 - Travail par rayon laser, p. ex. soudage, découpage ou perçage pour le traitement de surface
C23C 16/52 - Commande ou régulation du processus de dépôt
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
100.
IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS
Methods and systems for in-situ temperature control are provided. The system includes a temperature-sensing dis. The temperature-sensing disc has a body, a front surface and a back surface opposing the front surface. One or more cameras are positioned on the front surface, the back surface, or both the front surface and the back surface. The one or more cameras are configured for performing infrared-based imaging of a surface of a processing chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H10N 10/13 - Dispositifs thermoélectriques comportant une jonction de matériaux différents, c.-à-d. dispositifs présentant l'effet Seebeck ou l'effet Peltier fonctionnant exclusivement par les effets Peltier ou Seebeck caractérisés par les moyens d'échange de chaleur à la jonction
