37 - Services de construction; extraction minière; installation et réparation
Produits et services
Maintenance and repair services for semiconductor processing
and production equipment and components thereof; maintenance
and repair services for semiconductor wafer processing
equipment and components thereof.
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Design, development, maintenance, updating, installation,
and implementation of computer software; computer system
design and engineering services; providing online non
downloadable software for monitoring, analyzing,
controlling, and optimizing manufacturing operations and
industrial process performance in the semiconductor
manufacturing industry.
A carrier includes fingers configured to support a process kit ring and one or more protrusions that extend past a perimeter of a carrier body portion of the carrier and are configured to be disposed proximate a flat inner surface of the process kit ring to prevent rotation of the process kit ring.
B25J 19/00 - Accessoires adaptés aux manipulateurs, p. ex. pour contrôler, pour observerDispositifs de sécurité combinés avec les manipulateurs ou spécialement conçus pour être utilisés en association avec ces manipulateurs
B25J 15/08 - Têtes de préhension avec des éléments en forme de doigts
Methods and apparatus for processing a substrate using a plasma processing assembly. One example plasma processing assembly includes a processing chamber including a processing region, a plasma screen disposed within the processing region that forms a first region of the processing region and a second region of the processing region, a substrate support assembly disposed within the processing region, and a field generation system. The field generation system generally includes a first coil assembly including one or more first coils, where the one or more first coils are aligned in a first direction and at least partially encircle the processing region and where the first coil assembly is disposed inside the first region, and a second coil assembly including one or more second coils, where the one or more second coils at least partially encircle the processing region and the second coil assembly is disposed inside the second region.
A drift tube assembly including a drift tube having a cylindrical main body and a mounting cuff extending from the main body and defining a mounting socket. A mounting device is disposed within the mounting socket and includes an inner sleeve having a tapered exterior surface, a tubular outer sleeve surrounding the inner sleeve and having a tapered interior surface engaging the exterior surface of the inner sleeve, and a nut surrounding the outer and inner sleeves and including a flange extending into a groove formed in an exterior of the outer sleeve, the nut threadedly engaging a threaded portion of the exterior surface of the inner sleeve. A mounting rod extends into a passthrough of the inner sleeve of the mounting device. Tightening the nut causes the inner sleeve to tighten against the mounting rod and causes the outer sleeve to tighten against the mounting cuff.
A method for forming an oxide layer includes forming at least a portion of a gate oxide layer on inner surfaces of an opening, forming a silicon nitride capping layer on the portion of the gate oxide layer, and performing a conversion process to at least partially oxidize the silicon nitride capping layer, forming a nitrogen-doped gate oxide layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
Described herein are embodiments related to a chamber and method for cleaning herein including a dual gas line system. The chamber includes a first input line including a first outlet positioned within the chamber to output a first gas stream and a second input line including a second outlet positioned within the chamber to output a second gas stream. The first input gas line and the second input gas line are coaxial to each other, and the outlets directly face each other.
B08B 9/093 - Nettoyage de récipients, p. ex. de réservoirs par la force de jets ou de pulvérisations
B08B 13/00 - Accessoires ou parties constitutives, d'utilisation générale, des machines ou appareils de nettoyage
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposition-enabling layer (DEL) on a side of the recess, and selective deposition of trap layer. After removing the sacrificial layer from a slit pattern opening, the deposition-enabling layer (DEL) is converted into an oxide to be used as blocking oxide.
H10B 43/27 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p. ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p. ex. avec des canaux inclinés les canaux comprenant des parties verticales, p. ex. des canaux en forme de U
H10D 30/69 - Transistors IGFET ayant des isolateurs de grille à piégeage de charges, p. ex. transistors MNOS
Methods and systems for process chamber qualification for maintenance process endpoint detection are provided. Sensor data collected by sensors of manufacturing equipment of a manufacturing system during performance of one or more initial maintenance operations of a maintenance process is obtained. The obtained sensor data is provided as an input to a machine learning (ML) model and one or more outputs of the ML model are obtained. The output(s) include a current state of the manufacturing equipment based on the performance of the initial maintenance operation(s). The current state represents a distance between the obtained sensor data and target sensor data associated with a final maintenance operation of the maintenance process. A set of subsequent maintenance operations of the maintenance process is determined based on the current state of the manufacturing equipment. Performance of the set of subsequent maintenance operations at the manufacturing equipment is initiated.
A method for in-situ inspection of a plurality of layers deposited on a substrate in a vacuum deposition system is described. The method includes: (1a) moving the substrate (10) and a first edge exclusion shield (100) past a first deposition source (51) to deposit a first material layer on the substrate, wherein the first edge exclusion shield (100) is moved in front of the substrate (10) on a first shield track (12) so that a first shielded region (121) of the substrate is shielded by the first edge exclusion shield (100); (1b) inspecting the first material layer (31); (2a) moving the substrate (10) and a second edge exclusion shield (100') past a second deposition source (52) to deposit a second material layer (32) on the substrate at least partially over the first material layer (31), wherein the second edge exclusion shield (100') is moved in front of the substrate (10) so that a second shielded region (122) of the substrate is shielded by the second edge exclusion shield (100'), the second shielded region being displaced relative to the first shielded region toward a first substrate edge (131) to expose a first substrate area (125) that is free of the first material layer; and (2b) inspecting the second material layer in the first substrate area (125). Further, a vacuum deposition system configured to carry out the in-situ inspection method is described.
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
A flow swirler comprising a first flow channel, defined by a first cylindrical wall, for first fluid flow, wherein a first end of the first cylindrical wall is arranged in the form of a swirl-inducing pattern, the swirl-inducing pattern comprising a plurality of bent-shaped swirl blades in a repeating pattern to induce swirling to the first fluid flow to generate swirl flow.
B01F 23/43 - Mélange de liquides avec des liquidesÉmulsion en utilisant des agitateurs entraînés
B01F 27/2323 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins caractérisés par l'orientation ou la disposition de l'axe du rotor avec plusieurs axes de rotation avec des axes perpendiculaires
B01F 27/80 - Mélangeurs à agitateurs tournant dans des récipients fixesPétrins avec des agitateurs tournant autour d'un axe sensiblement vertical
14.
FAST SCANNING ACOUSTIC MICROSCOPY FOR SUBSURFACE IMAGING AND INSPECTION
Embodiments of the present disclosure relate to fast scanning acoustic microscopy for subsurface imaging and inspection. For example, a system may include at least one processing device configured to perform operations including initiating imaging of a sample using an acoustic microscope, and causing the sample to be scanned at a radial distance relative to a center position of the sample to perform the imaging of the sample. The sample is located on a stage, and the stage rotates at a rotational speed determined based on the radial distance.
An optical system (100) for analyzing a diffuser (104) comprises an optical sensor (112) coupled to a support structure (106), wherein the optical sensor (112) comprises a lens assembly (114) operable to provide an image of one or more openings of a plurality of openings (102) of the diffuser (104). The optical system (100) further includes a plurality of alignment plates (120) positionable over the diffuser (104), wherein each of the plurality of alignment plates (120) comprises a plurality of main openings (138) arranged between a first end (140) and a second end (141), wherein each of the plurality of main openings (138) is positioned over a set of openings of the plurality of openings (102) of the diffuser (104), and wherein a base (108) of the support structure (106) is positionable directly atop the plurality of alignment plates (120). An optical system (100) for analyzing a plurality of openings (102) of a diffuser (104) and a portable optical system (100) are also provided.
Exemplary etching methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A metal-and-carbon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting the substrate may oxidize at least a portion of the metal-and-carbon-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the metal-and-oxygen-containing material with the halogen-containing precursor. The contacting the metal-and-oxygen-containing material may etch the metal-and-oxygen-containing material.
An embodiment of a gas confiner for a substrate processing chamber. The gas confiner includes a body having a pair of major sides and a pair of minor sides, wherein the pair of minor sides are shorter than the pair of major sides. In addition, the body includes an outer edge extending along the pair of major sides and the pair of minor sides and an inner edge extending along the pair of major sides and the pair of minor sides. Further, the body includes an opening through the body defined by the inner edge. A thickness of the body is different along the pair of major sides than along the pair of minor sides.
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
18.
CYCLIC DEPOSITION OF SILICON NITRIDE BASED DIELECTRIC FILMS
A method for depositing silicon nitride (SiN) films within high aspect ratio (HAR) features with a reduced number of deposition cycles is provided. The method includes depositing three layers, for example, a silicon seed/silicon nitride/ a silicon cap. The silicon seed and cap layers demonstrate improved bottom deposition performance with minimum sidewall and top deposition relative to silicon nitride. The silicon seed layer fills a portion of the HAR feature thus reducing the number of silicon nitride cycles needed to fill the HAR feature to targeted levels. The silicon cap layer protects the deposited silicon nitride during subsequent etching processes, which are performed to remove silicon nitride material formed on sidewalls and top surface of the feature.
Embodiments described herein generally relate to semiconductor devices. More specifically, embodiments described herein relate to the production of films with high thermal conductivity and low dielectric constants for use in 3D semiconductor device packages. In at least one embodiment, a 3D integrated circuit is provided. The 3D integrated circuit includes at least one inter metal dielectric layer disposed between two metal interconnect layers. The inter metal dielectric layer includes a hexagonal boron nitride film having a dielectric constant of less than or about 5.0 and a specific conductivity of about 10 W/(mK) or greater. The 3D integrated circuit further includes a via disposed through the hexagonal boron nitride film, electrically connecting the two metal layers.
Embodiments of the present disclosure generally relate to augmented reality systems. More specifically, embodiments described herein provide for a waveguide with at least one ophthalmic lens, an augmented reality system, a method of fabricating waveguides with ophthalmic lenses, and an assembly for fabricating waveguides with ophthalmic lenses are shown and described herein.
G02B 1/04 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de substances organiques, p. ex. plastiques
A computerized system for layer separation for e-beam overlay metrology that includes a processing and memory circuitry (PMC) configured to generate an X-ray image from an upper layer signal component and a lower layer signal component of an X-ray signal that is detected by an X-ray detector and is generated in response to illuminating a wafer with an e-beam. the wafer includes an upper layer composed of a first material and a lower layer composed of a different material. The upper layer includes a plurality of first patterns and the lower layer includes a plurality of second patterns, wherein at least a few of the second patterns are partially or fully occluded by a few of the first patterns. The upper layer signal component and the lower-layer signal component represents the patterns in the upper and lower layers respectively, and wherein the upper layer and lower layer signal components are segregable by unique wavelengths that depend on their respective first and second materials.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
Embodiments of the disclosure generally relate to methods for filling substrate features. Particularly, embodiments of the disclosure are directed to methods improving lateral gap fill. In one embodiment, a method includes positioning a substrate having a feature formed therein within a processing chamber, the feature comprising a vertical trench and one or more lateral trenches extending from the vertical trench; exposing the substrate to at least one pretreatment precursor to pretreat the substrate, wherein pretreating the substrate increases a hydrophobicity of one or more surfaces of the feature in the substrate; and depositing a gapfill material on the substrate and the feature formed therein to gapfill the vertical trench and the one or more lateral trenches of the feature.
Disclosed herein are approaches for forming a void-free trench fill material in a high aspect ratio trench using an angled ion implant. In some embodiments, a method may include providing a trench in a substrate, the trench including a set of sidewalls connected by a bottom surface, and forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate. The ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls.
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
24.
SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS
Exemplary semiconductor structures may include a substrate. The structures may include a silicon-and-oxygen material may overlying the substrate. The structures may include a silicon-carbon-and-nitrogen material overlying the silicon-and-oxygen material. The structures may include a metal-doped boron-containing material overlying the silicon-carbon-and-nitrogen material. The metal-doped boron-containing material may be or include a metal dopant comprising tungsten. The structures may include one or more additional materials overlying the metal-doped boron-containing material. The one or more additional materials may be or include a patterned photoresist material.
A method for controlling fluorine diffusion during plasma enhanced chemical vapor deposition (PECVD) of silicon nitride is disclosed. The process involves forming a chamber seasoning layer including silicon oxide and/or silicon nitride over aluminum-containing surfaces in the processing chamber after fluorine-based cleaning. The seasoning layer is then treated with hydrogen plasma, passivating silicon dangling bonds and blocking fluorine diffusion pathways. By reducing fluorine contamination in the films that are deposited afterward, this method enhances film quality, boosts device electrical performance, and increases manufacturing yield.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A metal-containing material may be disposed on a substrate housed within the processing region. The oxygen-containing precursor may be provided from a gas box of the semiconductor processing chamber, through a showerhead defining an upper surface of the processing region, and into the processing region without passing an intervening gas flow component. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize a portion of the metal-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the halogen-containing precursor to etch the metal-and-oxygen-containing material.
Disclosed herein is a gas panel assembly operable with a substrate processing chamber, the gas panel assembly including an enclosure defining a first compartment and a second compartment separated by a divider wall. A first gas pallet assembly within the first compartment is operable to provide a first gas to the substrate processing chamber, and a second gas pallet assembly within the second compartment is operable to provide a second gas to the substrate processing chamber. The gas panel assembly may further include a first flow control device between the first compartment and an exhaust, the first flow control device operable to control air flow between the first compartment and the exhaust, and a duct connecting the second compartment and the exhaust, wherein a second flow control device is operable to control air flow between the second compartment and the duct.
Embodiments of the disclosure generally relate to methods for filling substrate features. Particularly, embodiments of the disclosure are directed to methods improving lateral gap fill. In one embodiment, a method includes positioning a substrate having a feature formed therein within a processing chamber, the feature comprising a vertical trench and one or more lateral trenches extending from the vertical trench; exposing the substrate to at least one pretreatment precursor to pretreat the substrate, wherein pretreating the substrate increases a hydrophobicity of one or more surfaces of the feature in the substrate; and depositing a gapfill material on the substrate and the feature formed therein to gapfill the vertical trench and the one or more lateral trenches of the feature.
A substrate support assembly is provided, including: a substrate support that includes a lower portion and an upper portion; an electrode disposed in the upper portion; a heater disposed in the upper portion; and a plurality of spacers positioned between the lower portion and the upper portion to form a gap between the upper portion and the lower portion. The gap is open to allow gas to flow from outside the substrate support and through the gap.
Exemplary methods of semiconductor processing may include providing a silicon-free treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the silicon-free treatment precursor. The contacting may reduce a dielectric constant of the silicon-containing material. Subsequent to contacting the substrate with the silicon-free treatment precursor, a surface of the metal-containing material may be silicon-free.
A method of reducing defects in a beamline ion implanter. The method may entail, after performing an implantation procedure on a set of substrates disposed in a process chamber of a beamline of the ion implanter, using a first ion beam comprising a first ion species, the additional procedure of: performing a beam conditioning operation of at least a portion of the beamline. The beam conditioning operation may include generating a second ion beam and conducting the second ion beam to the process chamber along a direction of propagation, and moving the second ion beam within the process chamber, in a sweep direction, at an angle with respect to the direction of propagation, wherein a targeted region of the process chamber is impacted by the second ion beam.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A process chamber is provided including: a chamber body disposed around an interior volume; a substrate support in the interior volume, the substrate support having a substrate supporting surface; a gas delivery assembly positioned over the substrate support. A central vertical axis extends through the gas delivery assembly and through a center of the substrate support, and the substrate support includes an inner portion and an outer portion, the outer portion located further from the central vertical axis than the inner portion is to the central vertical axis. The process chamber further includes an electrode in the substrate support, the electrode located in the outer portion of the substrate support without extending into the inner portion of the substrate support.
Embodiments include a plasma processing apparatus including a chamber with an inner chamber wall. A workpiece support is within the inner chamber wall, the workpiece support for supporting a workpiece in a processing region of the chamber. A resonator probe is coupled to the inner chamber wall. The resonator probe includes an exposed resonator and a buried resonator.
Embodiments of the present disclosure are directed to methods of selectively etching silicon. The methods include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and one or more of an amine, a phosphine, a glycol, or an acid, or a mixture of one or more of the interhalogen, the halogen-containing species, the pseudohalogen species and a sulfur-containing species, into a semiconductor processing chamber containing a substrate; forming an activated species of the precursor; and exposing the substrate to the activated species to etch the substrate. The methods selectively etch silicon relative to silicon germanium, silicon oxide, and/or silicon nitride.
Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
The present disclosure provides a substrate processing chamber configured to produce an inductively coupled plasma. In one example, the substrate processing chamber includes a chamber body, a substrate support assembly disposed within the chamber body, a lid assembly enclosing a processing region within the chamber body, the lid assembly comprising an inductive coil configured to generate a plasma within the processing region of the chamber body, at least one magnet coupled to a magnet power source, and at least one electrode circumferentially extending along a perimeter of the chamber body. The at least one electrode is positioned below a metal lid support ring and above the at least one magnet.
Embodiments disclosed herein include electrode configurations for a plasma-enhanced deposition process. In an example, an electrode configuration includes a stack of wafer processing regions aligned along a vertical axis. A plurality of electrodes is surrounding the stack of wafer processing regions. Each one of the plurality of electrodes is extending along the vertical axis.
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
The present technology includes vertical cell dynamic random-access memory (DRAM) structures with improve bit line capacitance. Structures include a plurality of lower bit lines arranged in a first horizontal direction in a first horizontal plane. Structures include a plurality of upper bit lines arranged in the first horizontal direction in a second horizontal plane, where the first horizontal plane is vertically spaced apart from the second horizontal plane. Structures include one or more word lines arranged in a second horizontal direction. Structures include one or more channels extending in a vertical direction that is generally orthogonal to the first horizontal direction and the second horizontal direction such that the plurality of lower bit lines and plurality of upper bit lines intersect with a source/drain region of the one or more channels, and the one or more word lines intersect with a gated region of the one or more channels.
A carrier head assembly for a chemical mechanical polishing system is provided. The carrier head assembly includes a base assembly and a rectangular membrane. The rectangular membrane extends below and is coupled to the base assembly. The rectangular membrane defines pressurizable chambers including a first pressurizable chamber and a second pressurizable chamber arranged, at least in part, in a chamber stack in which the first pressurizable chamber is stacked on the second pressurizable chamber. The first and second pressurizable chambers are pressurizable to different pressures to create a pressure differential that provides a downward force through a side wall forming, at least in part, the second pressurizable chamber.
Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.
Methods and apparatus for processing a substrate are provided herein. For example, a method includes using an extended spectroscopic ellipsometer to direct a beam of electromagnetic radiation having a beam energy toward a portion of a substrate at an incident angle to produce an extended spectroscopic ellipsometry (ESE) data set from the portion of the substrate which includes a measured change of a phase and/or an amplitude of the beam of electromagnetic radiation reflecting away from the portion of the substrate relative to the beam of electromagnetic radiation directed toward the portion of the substrate. One or more properties of the portion of the substrate are then determined based at least in part on the ESE data set of the portion of the substrate.
Exemplary thief cartridges for an electroplating system may include a first body defining a thief electrode channel. The cartridges may include a second body defining a thief chamber. The cartridges may include at least one thief membrane disposed between and separating the thief electrode channel and the thief chamber. A collective thickness of the at least one thief membrane may be at least 35 mils. The cartridges may include a thief electrode disposed within the thief chamber.
A system includes a multi-substrate platform having a plurality of substrate holders, each substrate holder holding a respective substrate of a plurality of substrates. The system further includes an inspection system having a plurality of inspection heads to perform, concurrently, an inspection of the plurality of substrates, each inspection head collecting inspection data for the respective substrate of the plurality of substrates. The system further includes a processing device to identify, using the collected inspection data, at least one of (i.) presence of one or more defects in at least one substrate of the plurality of substrates or (ii.) one or more measurements of one or more properties of at least one substrate of the plurality of substrates.
A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include a screen plate, disposed immediately adjacent to the side of the plasma chamber, the screen plate having an angled portion that comprises a screen aperture, to extract an angled ion beam towards a first end of the extraction assembly. The extraction assembly may also include an acceleration plate, disposed outside of the screen plate, the acceleration plate having a middle portion that is shaped according to an outer surface of the screen plate. As such, the acceleration plate may include an acceleration aperture, aligned with the screen aperture, and the acceleration plate may include a distal portion adjacent to the middle portion, the distal portion having a distal end that extends beyond an end of the screen plate.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
Methods of season chamber components, methods of processing substrates, and seasoned chamber components are provided. Methods include flowing one or more deposition precursors at a deposition temperature into a substrate processing region of a semiconductor processing chamber housing the semiconductor processing chamber component. Methods include where the substrate processing region includes an electrostatic chuck, and the one or more deposition precursors are generally free of a nitride precursor. Methods include depositing at least a first seasoning layer on the semiconductor processing chamber component, where the at least the first seasoning layer has a thickness of greater than 0.5 µm.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
Embodiments of the present invention generally relate to devices and methods related to deoxyribonucleic acid (DNA) synthesis. A device for synthesizing DNA is provided. The device includes a LED panel, the LED panel includes a backplane, the backplane having a backplane surface, the backplane surface having at least one contact pad disposed over the backplane surface, a plurality of LED, the plurality of LEDs disposed over the backplane surface, where each LED of the plurality of LEDs couples to a contact pad, pixel isolation (PI) structures, the PI structures disposed over the backplane surface and between the plurality of LEDs, the PI structures defining a plurality of wells, and a coating disposed over the LED panel, the coating operable to seal each well to hold a liquid.
C12Q 1/6874 - Méthodes de séquençage faisant intervenir des réseaux d’acides nucléiques, p. ex. séquençage par hybridation [SBH]
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
Embodiments of the present disclosure generally relate to semiconductor processing equipment. In one or more embodiments, a flow assembly includes a baffle assembly coupled to a plasma source, the baffle assembly comprising a plurality of baffles and a mixing chamber disposed downstream of the plurality of baffles, and a manifold coupled to the plasma source and the baffle assembly, the manifold comprising a plurality of outlet openings, the plurality of outlet openings of the manifold configured to bypass the plurality of baffles.
Described are memory devices having an array region and a contact region adjacent the array region. The array region includes a cell transistor and a cell capacitor. The contact region includes a plurality of word line contacts extending in a first direction and a second plurality of word line contacts extending in a second direction. The memory stack comprises a plurality of conductor layers and a corresponding plurality of dielectric layers alternatingly arranged in a plurality of stacked pairs. Methods of forming a memory device are described.
Methods of reducing wafer bowing in 3D DRAM devices are described using stacks including one or more of epitaxial silicon (Si), carbon doped silicon (SiC), silicon germanium (SiGe), and carbon-doped silicon germanium (SiGeC). A plurality of film stacks is formed on a substrate surface, each of the film stacks comprises two doped silicon layers having different dopant amounts and a sacrificial layer that may be doped or undoped. 3D DRAM devices are also described.
The present disclosure provides a device that includes a substrate having a first face and a second face. The first face of the substrate includes a waveguide. The waveguide includes an input coupling grating, a pupil expansion grating, and an output coupling grating. An interposer is aligned with the input coupling grating and is coupled to the second face of the substrate using a reversible adhesive including a plurality of microstructures. A light engine is aligned with the input coupling grating and is coupled to the interposer.
Ampoules for precursors include a cavity, an outlet port, an inlet port configured to be connected to a carrier gas supply. The inlet port has an inlet conduit having a length extending into the cavity and defining a passageway. Gas openings along the length of the conduit are spaced at a distance that increases from the outlet port. The gas openings have an area that incrementally increases as the distance from the gas outlet port increases and the gas openings are configured to direct the flow the carrier gas parallel to a surface of the precursor contained in the cavity. A float within the passageway blocks carrier gas flow through the passageway and move away from the outlet port as a volume of the precursor in the ampoule decreases and to direct the carrier gas through one or more of the gas openings above the float.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
54.
REPAIRING LOW-K MATERIALS WITH SILICON-FREE TREATMENT PRECURSORS TO PREVENT SILICON RESIDUE FORMATION
Exemplary methods of semiconductor processing may include providing a silicon-free treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the silicon-free treatment precursor. The contacting may reduce a dielectric constant of the silicon-containing material. Subsequent to contacting the substrate with the silicon-free treatment precursor, a surface of the metal-containing material may be silicon-free.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
55.
BEAM CONDITIONING FOR DEFECT CONTROL IN BEAMLINE ION IMPLANTER
A method of reducing defects in a beamline ion implanter. The method may entail, after performing an implantation procedure on a set of substrates disposed in a process chamber of a beamline of the ion implanter, using a first ion beam comprising a first ion species, the additional procedure of: performing a beam conditioning operation of at least a portion of the beamline. The beam conditioning operation may include generating a second ion beam and conducting the second ion beam to the process chamber along a direction of propagation, and moving the second ion beam within the process chamber, in a sweep direction, at an angle with respect to the direction of propagation, wherein a targeted region of the process chamber is impacted by the second ion beam.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
56.
MEMBRANE DESIGN FOR RECTANGULAR SUBSTRATE POLISHING BY CHEMICAL MECHANICAL POLISHING
A carrier head assembly for a chemical mechanical polishing system is provided. The carrier head assembly includes a base assembly and a rectangular membrane. The rectangular membrane extends below and is coupled to the base assembly. The rectangular membrane defines pressurizable chambers including a first pressurizable chamber and a second pressurizable chamber arranged, at least in part, in a chamber stack in which the first pressurizable chamber is stacked on the second pressurizable chamber. The first and second pressurizable chambers are pressurizable to different pressures to create a pressure differential that provides a downward force through a side wall forming, at least in part, the second pressurizable chamber.
B24B 37/30 - Supports de pièce pour rodage simple face de surfaces planes
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
57.
CARBON-DOPED PVD DEPOSITED COBALT LINER LAYER FOR IMPROVED CU REFLOW
Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
58.
SYSTEMS AND METHODS FOR DEPOSITION RESIDUE CONTROL
Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen and a stem. The systems may include a baffle extending about a stem of the substrate support. The baffle may define one or more apertures through the baffle. The systems may include a fluid source fluidly coupled with the chamber body at an access between the stem of the substrate support and the baffle.
Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
60.
REDUCED STRAIN Si/SiGe HETEROEPITAXY STACKS FOR 3D DRAM
Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.
Apparatus and methods for plasma processing of a substrate in a processing chamber are provided. In one example, an apparatus is provided that includes reducing defectivity in features formed on the surface of a substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In another example, a method is provided that includes the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.
Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A method for bonding components of an electrostatic chuck includes applying a first melting point depressing layer (MDL) to a bottom surface of a first puck plate. A second MDL is applied to a top surface of a second puck plate. The first puck plate, and the second puck plate are heated to a temperature at or near the eutectic temperature of the first MDL or the second MDL, to thermally bond the first puck plate and the second puck plate.
B32B 37/06 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par le procédé de chauffage
B32B 37/08 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par le procédé de refroidissement
B32B 37/24 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui ne présente pas de cohésion avant la stratification, p. ex. constituée de matériau granulaire projeté sur un substrat
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H02N 13/00 - Embrayages ou dispositifs de maintien utilisant l'attraction électrostatique, p. ex. utilisant l'effet Johnson-Rahbek
64.
DIRECT WORD LINE CONTACT AND METHODS OF MANUFACTURE FOR 3D MEMORY
Described are memory devices having an array region and an extension region adjacent the array region. The array region includes at least two unit cells stacked vertically. The extension region includes a memory stack and a plurality of word line contacts. The memory stack comprises alternating layers of at least one conductive layer, a semiconductor layer, and an insulating layer. The plurality of word line contacts extend through the memory stack to the at least one conductive layer. Each of the plurality of word line contacts have a height that is different than the height of an adjacent word line contact. Each of the plurality of word line contacts has a metallization layer on the top surface. Methods of forming a memory device are described.
Methods and apparatus for processing a substrate are provided herein. For example, a method includes using an extended spectroscopic ellipsometer to direct a beam of electromagnetic radiation having a beam energy toward a portion of a substrate at an incident angle to produce an extended spectroscopic ellipsometry (ESE) data set from the portion of the substrate which includes a measured change of a phase and/or an amplitude of the beam of electromagnetic radiation reflecting away from the portion of the substrate relative to the beam of electromagnetic radiation directed toward the portion of the substrate. One or more properties of the portion of the substrate are then determined based at least in part on the ESE data set of the portion of the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Embodiments include a plasma processing apparatus including a chamber with an inner chamber wall. A workpiece support is within the inner chamber wall, the workpiece support for supporting a workpiece in a processing region of the chamber. A resonator probe is coupled to the inner chamber wall. The resonator probe includes an exposed resonator and a buried resonator.
A modular polishing system and substrate handling system can be configured to facilitate high throughput density substrate processing in a multi-stage substrate polishing process. The substrate is polished at a first polishing station for one of the stages in the multi-stage polishing process before being transferred to a second polishing station for a second stage of the multi-stage polishing process. Differently configured polishing stations can use different types of polishing pads, different types of pad conditioners, and/or may use one or more different types of polishing fluid during a stage of the substrate polishing process.
B24B 37/04 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes
B24B 37/10 - Machines ou dispositifs de rodageAccessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 51/00 - Systèmes pour la commande automatique d'une série d'opérations successives du meulage d'une pièce
68.
REMOVING OR PREVENTING RESIDUE SUBSEQUENT TO REPAIRING LOW-K MATERIALS
Exemplary methods of semiconductor processing may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the treatment precursor. The contacting may increase an amount of methyl groups (—CH3) in the silicon-containing material. The methods may include performing a wet clean to remove a silicon-containing residue from the metal-containing material.
A method and a system for modulating oxide growth. A substrate is provided. A substrate implantation process is performed. Subsequent to the implantation, an oxidation of the implanted substrate is performed to modulate oxide growth.
Disclosed herein is a gas panel assembly operable with a substrate processing chamber, the gas panel assembly including an enclosure defining a first compartment and a second compartment separated by a divider wall. A first gas pallet assembly within the first compartment is operable to provide a first gas to the substrate processing chamber, and a second gas pallet assembly within the second compartment is operable to provide a second gas to the substrate processing chamber. The gas panel assembly may further include a first flow control device between the first compartment and an exhaust, the first flow control device operable to control air flow between the first compartment and the exhaust, and a duct connecting the second compartment and the exhaust, wherein a second flow control device is operable to control air flow between the second compartment and the duct.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A computerized system for layer separation for e-beam overlay metrology that includes a processing and memory circuitry (PMC) configured to generate an X-ray image from an upper layer signal component and a lower layer signal component of an X-ray signal that is detected by an X-ray detector and is generated in response to illuminating a wafer with an e-beam. the wafer includes an upper layer composed of a first material and a lower layer composed of a different material. The upper layer includes a plurality of first patterns and the lower layer includes a plurality of second patterns, wherein at least a few of the second patterns are partially or fully occluded by a few of the first patterns. The upper layer signal component and the lower-layer signal component represents the patterns in the upper and lower layers respectively, and wherein the upper layer and lower layer signal components are segregable by unique wavelengths that depend on their respective first and second materials.
G01N 23/2252 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM] en mesurant les rayons X émis, p. ex. microanalyse à sonde électronique [EPMA]
09 - Appareils et instruments scientifiques et électriques
Produits et services
Semiconductor manufacturing machines, namely, electrochemical plating (ECP) machines, substrate cleaning machines, and surface preparation machines for processing substrate, all for use in semiconductor manufacturing and advanced semiconductor packaging and structural parts and fittings therefor; Semiconductor manufacturing machines and apparatus incorporating artificial intelligence-powered automation systems for optimizing equipment operation and production scheduling. Sensors and measuring instruments for monitoring and measuring the operation, condition, and performance of electrochemical plating (ECP), substrate cleaning, and surface preparation machines used in semiconductor manufacturing and advanced semiconductor packaging; downloadable computer software for controlling and operating electrochemical plating (ECP), substrate cleaning, and surface preparation machines, and for equipment monitoring, data acquisition, diagnostics, plating bath monitoring, process analytics, defect classification, yield analysis, and process optimization in semiconductor manufacturing and advanced semiconductor packaging
73.
METAL SILICIDE POST TREATMENT TO ENHANCE THERMAL STABILITY
A method of forming and post-treating a metal silicide layer in a semiconductor structure includes performing a silicide deposition process, in which a metal silicide layer is deposited on a substrate, performing a chemical vapor deposition (CVD) soak process in which the metal silicide layer is exposed to a nitrogen (N)-containing liquid precursor, forming a metal silicide nitride layer, and performing a cap deposition process, in which a cap layer is deposited on the metal silicide nitride layer.
Optical inspection of the surface of a substrate may take place in a factory interface where an aligner rotates the substrate to identify an alignment mark. While rotating, light may also be reflected off the surface of the substrate and captured by to identify defects or other variations on the substrate surface. However, the edge of the substrate often includes a bevel, and light directed at the edge of the substrate does not reflect off the bevel into the camera uniformly. Therefore, multiple light sources may be used simultaneously. For example, one light source may be directed perpendicularly at the edge of the bevel while another light source is directed at the bevel edge and configured such that light reflects off of the bevel into the camera. This provides an image with uniform lighting that can be more effectively used to identify defects on the edge of the substrate.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
75.
High Critical Temperature Metal Nitride Layer with Oxynitride Seed Layer
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include a screen plate, disposed immediately adjacent to the side of the plasma chamber, the screen plate having an angled portion that comprises a screen aperture, to extract an angled ion beam towards a first end of the extraction assembly.
A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include a screen plate, disposed immediately adjacent to the side of the plasma chamber, the screen plate having an angled portion that comprises a screen aperture, to extract an angled ion beam towards a first end of the extraction assembly.
The extraction assembly may also include an acceleration plate, disposed outside of the screen plate, the acceleration plate having a middle portion that is shaped according to an outer surface of the screen plate. As such, the acceleration plate may include an acceleration aperture, aligned with the screen aperture, and the acceleration plate may include a distal portion adjacent to the middle portion, the distal portion having a distal end that extends beyond an end of the screen plate.
Embodiments of the present disclosure are directed to methods of selectively etching silicon. The methods include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and one or more of an amine, a phosphine, a glycol, or an acid, or a mixture of one or more of the interhalogen, the halogen-containing species, the pseudohalogen species and a sulfur-containing species, into a semiconductor processing chamber containing a substrate; forming an activated species of the precursor; and exposing the substrate to the activated species to etch the substrate. The methods selectively etch silicon relative to silicon germanium, silicon oxide, and/or silicon nitride.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/10 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du bore
78.
METHODS OF DEPOSITING THERMALLY CONDUCTIVE POLYMERIC FILMS
Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C09D 161/22 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des composés contenant de l'hydrogène lié à l'azote d'aldéhydes avec des composés acycliques ou carbocycliques
C09D 167/02 - Polyesters dérivés d'acides dicarboxyliques et de composés dihydroxylés
C09D 175/12 - Polyuréthanes à partir de composés contenant de l'azote et un hydrogène actif, l'atome d'azote ne faisant pas partie d'un groupe isocyanate
C09D 177/06 - Polyamides dérivés de polyamines et d'acides polycarboxyliques
C23C 10/06 - Diffusion à l'état solide uniquement d'éléments métalliques ou de silicium dans la couche superficielle de matériaux métalliques au moyen de gaz
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
An optical interface includes a cladding layer having a plurality of inner cores and a plurality of turning elements formed therein. Each inner core the plurality of inner cores is associated with a respective turning element of the plurality of turning elements. The optical interface further includes an array of optical elements formed on the cladding layer. Each optical element of the array of optical elements is associated with a respective turning element of the plurality of turning elements.
In embodiments, a method includes receiving, by a processing device, first sensor data generated by a plurality of sensors of a process chamber of a manufacturing system during execution of a fabrication process. The method includes receiving, by the processing device, second sensor data generated by one or more external sensors that are not components of the process chamber during execution of the fabrication process. The method includes determining, by the processing device, environmental resource usage data indicative of an environmental resource consumption of the fabrication process run on the process chamber based on the first sensor data and the second sensor data. The method includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).
Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A method for sequencing a hybrid bonding process by double linking a source of dies and a target. The method may include selecting a source of dies for bonding, selecting a target on which the dies will be bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence that includes a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber allocations and process timing for the source and the target based on the integrated bonding product sequence, and bonding a die from the source to the target using the integrated bonding product sequence.
A substrate polishing apparatus having a cleaning station mounted to a wall of a housing of the polishing apparatus. The cleaning station includes a nozzle movable relative to the wall, and the nozzle configured to spray a cleaning fluid. The apparatus also include an image sensor configured to generate an image of a surface of the polishing apparatus. A controller coupled to the nozzle is configured to direct the nozzle to the surface and configured to monitor slurry buildup on the surface using the image.
B24B 53/017 - Dispositifs ou moyens pour dresser, nettoyer ou remettre en état les outils de rodage
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
B08B 3/02 - Nettoyage par la force de jets ou de pulvérisations
A method includes forming a plurality of dies on one or more first substrates. The method further includes stacking multiple dies of the plurality of dies on a second substrate to form a die stack. The method further includes forming a through-via in the die stack. The through-via electrically couples each of the multiple dies of the die stack.
Optical inspection of the surface of a substrate may take place in a factory interface where an aligner rotates the substrate to identify an alignment mark. While rotating, light may also be reflected off the surface of the substrate and captured by to identify defects or other variations on the substrate surface. However, the edge of the substrate often includes a bevel, and light directed at the edge of the substrate does not reflect off the bevel into the camera uniformly. Therefore, multiple light sources may be used simultaneously. For example, one light source may be directed perpendicularly at the edge of the bevel while another light source is directed at the bevel edge and configured such that light reflects off of the bevel into the camera. This provides an image with uniform lighting that can be more effectively used to identify defects on the edge of the substrate.
A method and corresponding device structure includes depositing a metal fill material on at least one electrical connection formed in a feature formed within a first dielectric layer of a semiconductor device structure, wherein the metal fill material completely fills the feature. The method further includes depositing a protective layer over an upper surface of the metal fill material, and depositing a barrier layer over the protective layer.
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/06 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique
Embodiments of the present disclosure generally relate to a display. More specifically, embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light- emitting diode (OLED) display. The device includes a plurality of overhang structures, each overhang structure including a first structure having a first portion opposing a second portion, a second structure disposed over the first structure, wherein an overhang of the second structure extends laterally past an upper surface of the first structure to define the overhang, and an auxiliary electrode is disposed partially under the second portion, and a plurality of sub-pixels defined by the plurality of overhang structures, each sub-pixel including an OLE material, and a cathode disposed over the OLE material, the cathode under the overhang disposed over the second portion of the first structure contacts the auxiliary electrode.
Embodiments of the present disclosure relate to substrate bow measurement and control. For example, a system may include a memory, and at least one processing device, operatively coupled with the memory, to initiate a process with respect to a substrate, obtain thermal radiation data corresponding to one or more locations on the substrate, determine an amount of bow of the substrate based on the thermal radiation data, and cause at least one corrective action to be performed based on the amount of bow of the substrate. The least one action includes at least one of cause an alert to be generated, or cause at least one process parameter of the process to be changed.
Embodiments of the present disclosure generally relate to a processing system. In one or more embodiments, the processing system includes a processing chamber and a flow assembly coupled to the processing chamber including a plasma source. A chamber body, a substrate support, and a lid assembly include an aluminum material treated with a coating having a y value of less than about 9x10-4. The processing chamber is configured to perform a method of pretreating a substrate. The method includes performing a first carbon clean process on the substrate disposed in a processing chamber utilizing a plasma formed in the plasma source using one or more gases. The plasma flows into the processing chamber via the flow assembly. A first selective oxide removal process is performed on the substrate disposed in the processing chamber. The first selective oxide removal process utilizes one or more process gases.
A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential steps of (a) loading the particles comprising the drug into a reactor, (b) applying a vaporous or gaseous metal precursor to the particles in the reactor, (c) performing one or more pump-purge cycles of the reactor using inert gas, (d) applying a vaporous or gaseous oxidant to the particles in the reactor, and (e) performing one or more pump-purge cycles of the reactor using inert gas. The temperature of the particles does not exceed 35° C. This produces a pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials.
A61J 3/07 - Dispositifs ou procédés spécialement conçus pour donner à des produits pharmaceutiques une forme physique déterminée ou une forme propre à leur administration la forme de capsules ou de petits conteneurs similaires à absorber par voie buccale
A61K 31/405 - Acides indole-alkanecarboxyliquesLeurs dérivés, p. ex. tryptophane, indométhacine
A61K 31/424 - Oxazoles condensés avec des systèmes hétérocycliques, p. ex. acide clavulanique
A61K 31/43 - Composés contenant des systèmes cycliques thia-4 aza-1 bicyclo [3.2.0] heptane, c.-à-d. composés contenant un système cyclique de formule , p. ex. pénicillines, pénèmes
A61K 31/506 - PyrimidinesPyrimidines hydrogénées, p. ex. triméthoprime non condensées et contenant d'autres hétérocycles
A61K 31/519 - PyrimidinesPyrimidines hydrogénées, p. ex. triméthoprime condensées en ortho ou en péri avec des hétérocycles
A61K 31/7048 - Composés ayant des radicaux saccharide et des hétérocycles ayant l'oxygène comme hétéro-atome d'un cycle, p. ex. leucoglucosane, hespéridine, érythromycine, nystatine
A61K 47/58 - Préparations médicinales caractérisées par les ingrédients non actifs utilisés, p. ex. les supports ou les additifs inertesAgents de ciblage ou de modification chimiquement liés à l’ingrédient actif l’ingrédient non actif étant chimiquement lié à l’ingrédient actif, p. ex. conjugués polymère-médicament l’ingrédient non actif étant un agent de modification l’agent de modification étant un composé organique macromoléculaire, p. ex. une molécule oligomérique, polymérique ou dendrimérique obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p. ex. poly[méth]acrylate, polyacrylamide, polystyrène, polyvinylpyrrolidone, alcool polyvinylique ou résine d’acide sulfonique de polystyrène
C07K 16/22 - Immunoglobulines, p. ex. anticorps monoclonaux ou polyclonaux contre du matériel provenant d'animaux ou d'humains contre des facteurs de croissance
C07K 16/28 - Immunoglobulines, p. ex. anticorps monoclonaux ou polyclonaux contre du matériel provenant d'animaux ou d'humains contre des récepteurs, des antigènes de surface cellulaire ou des déterminants de surface cellulaire
C07K 16/32 - Immunoglobulines, p. ex. anticorps monoclonaux ou polyclonaux contre du matériel provenant d'animaux ou d'humains contre des produits de traduction des oncogènes
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
Described are memory devices having an array region and a contact region adjacent the array region. The array region includes a cell transistor and a cell capacitor. The contact region includes a plurality of word line contacts extending in a first direction and a second plurality of word line contacts extending in a second direction. The memory stack comprises a plurality of conductor layers and a corresponding plurality of dielectric layers alternatingly arranged in a plurality of stacked pairs. Methods of forming a memory device are described.
Methods of season chamber components, methods of processing substrates, and seasoned chamber components are provided. Methods include flowing one or more deposition precursors at a deposition temperature into a substrate processing region of a semiconductor processing chamber housing the semiconductor processing chamber component. Methods include where the substrate processing region includes an electrostatic chuck, and the one or more deposition precursors are generally free of a nitride precursor. Methods include depositing at least a first seasoning layer on the semiconductor processing chamber component, where the at least the first seasoning layer has a thickness of greater than 0.5 μm.
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
The present technology includes vertical cell dynamic random-access memory (DRAM) structures with improve bit line capacitance. Structures include a plurality of lower bit lines arranged in a first horizontal direction in a first horizontal plane. Structures include a plurality of upper bit lines arranged in the first horizontal direction in a second horizontal plane, where the first horizontal plane is vertically spaced apart from the second horizontal plane. Structures include one or more word lines arranged in a second horizontal direction. Structures include one or more channels extending in a vertical direction that is generally orthogonal to the first horizontal direction and the second horizontal direction such that the plurality of lower bit lines and plurality of upper bit lines intersect with a source/drain region of the one or more channels, and the one or more word lines intersect with a gated region of the one or more channels.
Embodiments disclosed herein include electrode configurations for a plasma-enhanced deposition process. In an example, an electrode configuration includes a stack of wafer processing regions aligned along a vertical axis. A plurality of electrodes is surrounding the stack of wafer processing regions. Each one of the plurality of electrodes is extending along the vertical axis.
A heater pedestal may include a heater plate. The heater plate may include a monolithic body and one or more heater elements disposed within the monolithic body. The monolithic body may include a first surface for supporting a substrate. The monolithic body may define: a first plurality of openings in the first surface; a second plurality of openings in a second surface of the monolithic body; and a plurality of channels, each respective channel of the plurality of channels extending from a respective opening of the first plurality of openings to a respective opening of the second plurality of openings. The heater pedestal may further include a post having a first surface coupled to the second surface of the monolithic body.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Methods of processing a substrate are disclosed herein which include treating a surface of a first portion of the substrate to produce a treated substrate having a treated first portion and a second portion, wherein a bonding speed of the treated first portion to another substrate is different than a bonding speed of the second portion to the other substrate. A method of bonding a first substrate to a second substrate is also disclosed.
Methods of monitoring arcing in a process chamber, processing chambers and monitoring apparatus are described. At least one of the angular or radial position of a magnetron is determined in the chamber relative to a reference location on a surface of the substrate using positional information from one or more motors. An arcing profile is generated comprising a plurality of arcing states measured based at least on the determined angular and/or radial position of the magnetron.
A method of forming and post-treating a metal silicide layer in a semiconductor structure includes performing a silicide deposition process, in which a metal silicide layer is deposited on a substrate, performing a chemical vapor deposition (CVD) soak process in which the metal silicide layer is exposed to a nitrogen (N)-containing liquid precursor, forming a metal silicide nitride layer, and performing a cap deposition process, in which a cap layer is deposited on the metal silicide nitride layer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
Embodiments of the present disclosure generally relate to an ophthalmic lens assembly including ophthalmic lenses having fiducials formed thereon. In some embodiments, a method of forming an ophthalmic lens assembly includes aligning one or more fiducials of a waveguide with one or more fiducials of a first ophthalmic lens. The method further includes coupling a first surface of the waveguide with a surface of the first ophthalmic lens. The method further includes aligning one or more fiducials of a second ophthalmic lens with the one or more fiducials of the waveguide and the first ophthalmic lens. The method further includes coupling a second surface of the waveguide with a surface of the second ophthalmic lens.
