- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
Patent holdings for IPC class C30B 28/14
Total number of patents in this class: 107
10-year publication summary
|
5
|
3
|
2
|
2
|
4
|
3
|
1
|
14
|
16
|
10
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Tokai Carbon Co., Ltd. | 106 |
6 |
| Soitec | 1110 |
5 |
| Shin-Etsu Chemical Co., Ltd. | 6120 |
4 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11127 |
4 |
| Mersen France Gennevilliers SAS | 24 |
4 |
| SGL Carbon SE | 404 |
3 |
| Sixpoint Materials, Inc. | 78 |
3 |
| STMicroelectronics International N.V. | 4217 |
3 |
| Wacker Chemie AG | 2111 |
3 |
| Sumitomo Electric Hardmetal Corp. | 1102 |
2 |
| NGK Insulators, Ltd. | 5200 |
2 |
| The Board of Trustees of the Leland Stanford Junior University | 6687 |
2 |
| Toyoda Gosei Co., Ltd. | 1857 |
2 |
| Japan Science and Technology Agency | 1210 |
2 |
| Kennametal Inc. | 1355 |
2 |
| Globalwafers Co., Ltd. | 730 |
2 |
| MEMC Electronic Materials, Inc. | 71 |
2 |
| Okmetic Oyj | 16 |
2 |
| REC Silicon Inc | 76 |
2 |
| Sumco Corporation | 1109 |
2 |
| Other owners | 50 |