- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
Patent holdings for IPC class H01L 21/223
Total number of patents in this class: 366
10-year publication summary
|
42
|
50
|
44
|
37
|
20
|
18
|
19
|
19
|
13
|
4
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47734 |
58 |
| Applied Materials, Inc. | 20145 |
19 |
| Varian Semiconductor Equipment Associates, Inc. | 1192 |
18 |
| International Business Machines Corporation | 62325 |
17 |
| Micron Technology, Inc. | 27384 |
17 |
| Infineon Technologies AG | 8382 |
17 |
| Kioxia Corporation | 10727 |
11 |
| Samsung Electronics Co., Ltd. | 155224 |
9 |
| Tokyo Electron Limited | 13617 |
9 |
| Intel Corporation | 46737 |
5 |
| Infineon Technologies Austria AG | 2306 |
5 |
| SK Hynix Inc. | 12267 |
5 |
| Sandisk Technologies Inc. | 5400 |
5 |
| Lam Research Corporation | 5560 |
5 |
| ION Beam Services | 33 |
5 |
| Toshiba Corporation | 12687 |
4 |
| Mitsubishi Electric Corporation | 47722 |
4 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11021 |
4 |
| Boe Technology Group Co., Ltd. | 43343 |
4 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1447 |
4 |
| Other owners | 141 |