• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase

Patent holdings for IPC class H01L 21/223

Total number of patents in this class: 366

10-year publication summary

42
50
44
37
20
18
19
19
13
4
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
47734
58
Applied Materials, Inc.
20145
19
Varian Semiconductor Equipment Associates, Inc.
1192
18
International Business Machines Corporation
62325
17
Micron Technology, Inc.
27384
17
Infineon Technologies AG
8382
17
Kioxia Corporation
10727
11
Samsung Electronics Co., Ltd.
155224
9
Tokyo Electron Limited
13617
9
Intel Corporation
46737
5
Infineon Technologies Austria AG
2306
5
SK Hynix Inc.
12267
5
Sandisk Technologies Inc.
5400
5
Lam Research Corporation
5560
5
ION Beam Services
33
5
Toshiba Corporation
12687
4
Mitsubishi Electric Corporation
47722
4
Commissariat à l'énergie atomique et aux energies alternatives
11021
4
Boe Technology Group Co., Ltd.
43343
4
Institute of Microelectronics, Chinese Academy of Sciences
1447
4
Other owners 141