• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11587 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the top-view layout

Patent holdings for IPC class H01L 27/11587

Total number of patents in this class: 129

10-year publication summary

1
7
18
19
48
26
10
2
0
0
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
46877
26
Sandisk Technologies Inc.
5317
20
Micron Technology, Inc.
27235
10
SK Hynix Inc.
12014
10
Sandisk Technologies LLC
1451
10
Kioxia Corporation
10680
7
Samsung Electronics Co., Ltd.
152534
6
Renesas Electronics Corporation
5881
3
Institute of Microelectronics, Chinese Academy of Sciences
1416
3
Sony Semiconductor Solutions Corporation
11123
3
Ferroelectric Memory GmbH
80
3
Macronix International Co., Ltd.
2522
2
Lam Research Corporation
5479
2
National Institute of Advanced Industrial Science and Technology
3794
2
Sunrise Memory Corporation
214
2
Parabellum Strategic Opportunities Fund LLC
205
2
Sony Corporation
30518
1
International Business Machines Corporation
62076
1
Intel Corporation
46625
1
Synopsys, Inc.
2729
1
Other owners 14