• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11592 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the peripheral circuit region

Patent holdings for IPC class H01L 27/11592

Total number of patents in this class: 70

10-year publication summary

2
0
3
9
18
19
6
11
2
0
2016 2017 2018 2019 2020 2021 2022 2023 2024 2025

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
42549
19
Micron Technology, Inc.
26258
11
Samsung Electronics Co., Ltd.
145630
6
Sandisk Technologies Inc.
4795
4
Intel Corporation
46960
3
Renesas Electronics Corporation
6020
3
Sunrise Memory Corporation
211
3
Sandisk Technologies LLC
1438
2
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1376
2
Seoul National University R&db Foundation
3580
2
Ferroelectric Memory GmbH
73
2
Kioxia Corporation
10285
2
Kepler Computing Inc.
300
2
Sony Corporation
31080
1
SK Hynix Inc.
11307
1
Macronix International Co., Ltd.
2561
1
GLOBALFOUNDRIES U.S. Inc.
6427
1
IMEC VZW
1638
1
Sony Semiconductor Solutions Corporation
10404
1
Unist(ulsan National Institute of Science and Technology)
468
1
Other owners 2