- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11592 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the peripheral circuit region
Patent holdings for IPC class H01L 27/11592
Total number of patents in this class: 70
10-year publication summary
2
|
0
|
3
|
9
|
18
|
19
|
6
|
11
|
2
|
0
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Taiwan Semiconductor Manufacturing Company, Ltd. | 42549 |
19 |
Micron Technology, Inc. | 26258 |
11 |
Samsung Electronics Co., Ltd. | 145630 |
6 |
Sandisk Technologies Inc. | 4795 |
4 |
Intel Corporation | 46960 |
3 |
Renesas Electronics Corporation | 6020 |
3 |
Sunrise Memory Corporation | 211 |
3 |
Sandisk Technologies LLC | 1438 |
2 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1376 |
2 |
Seoul National University R&db Foundation | 3580 |
2 |
Ferroelectric Memory GmbH | 73 |
2 |
Kioxia Corporation | 10285 |
2 |
Kepler Computing Inc. | 300 |
2 |
Sony Corporation | 31080 |
1 |
SK Hynix Inc. | 11307 |
1 |
Macronix International Co., Ltd. | 2561 |
1 |
GLOBALFOUNDRIES U.S. Inc. | 6427 |
1 |
IMEC VZW | 1638 |
1 |
Sony Semiconductor Solutions Corporation | 10404 |
1 |
Unist(ulsan National Institute of Science and Technology) | 468 |
1 |
Other owners | 2 |