- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11597 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by three-dimensional arrangements, e.g. cells on different height levels
Patent holdings for IPC class H01L 27/11597
Total number of patents in this class: 301
10-year publication summary
|
6
|
10
|
22
|
29
|
52
|
87
|
65
|
31
|
2
|
0
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46069 |
51 |
| Micron Technology, Inc. | 26502 |
37 |
| Sandisk Technologies Inc. | 4924 |
34 |
| Kioxia Corporation | 10456 |
26 |
| SK Hynix Inc. | 11652 |
23 |
| Samsung Electronics Co., Ltd. | 148924 |
20 |
| Sandisk Technologies LLC | 1451 |
19 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1457 |
14 |
| IMEC VZW | 1686 |
6 |
| Sunrise Memory Corporation | 213 |
6 |
| Macronix International Co., Ltd. | 2542 |
5 |
| Intel Corporation | 46445 |
4 |
| International Business Machines Corporation | 61734 |
3 |
| Huawei Technologies Co., Ltd. | 115556 |
3 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1399 |
3 |
| National Taiwan Normal University | 136 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11547 |
2 |
| Applied Materials, Inc. | 19204 |
2 |
| Lam Research Corporation | 5362 |
2 |
| Japan Science and Technology Agency | 1282 |
2 |
| Other owners | 36 |