• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11597 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by three-dimensional arrangements, e.g. cells on different height levels

Patent holdings for IPC class H01L 27/11597

Total number of patents in this class: 289

10-year publication summary

10
22
29
52
87
62
24
2
0
0
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
47734
47
Micron Technology, Inc.
27384
37
Sandisk Technologies Inc.
5400
34
Kioxia Corporation
10727
26
SK Hynix Inc.
12267
22
Sandisk Technologies LLC
1426
19
Samsung Electronics Co., Ltd.
155224
18
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1575
14
IMEC VZW
1767
6
Macronix International Co., Ltd.
2511
5
Sunrise Memory Corporation
215
5
Intel Corporation
46737
4
International Business Machines Corporation
62325
3
Huawei Technologies Co., Ltd.
121192
3
Institute of Microelectronics, Chinese Academy of Sciences
1447
3
Semiconductor Energy Laboratory Co., Ltd.
11705
2
Applied Materials, Inc.
20145
2
Lam Research Corporation
5560
2
Japan Science and Technology Agency
1221
2
Monolithic 3D Inc.
331
2
Other owners 33