- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/23 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Patent holdings for IPC class H10B 41/23
Total number of patents in this class: 36
10-year publication summary
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0
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0
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0
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0
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0
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2
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3
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10
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14
|
6
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| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42549 |
7 |
| Kioxia Corporation | 10285 |
6 |
| Samsung Electronics Co., Ltd. | 145630 |
3 |
| Micron Technology, Inc. | 26258 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11388 |
2 |
| SK Hynix Inc. | 11307 |
2 |
| Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | 196 |
2 |
| Yangtze Memory Technologies Co., Ltd. | 2618 |
2 |
| Applied Materials, Inc. | 18565 |
1 |
| United Microelectronics Corp. | 4254 |
1 |
| Macronix International Co., Ltd. | 2561 |
1 |
| National Institute of Advanced Industrial Science and Technology | 3799 |
1 |
| National University of Singapore | 2443 |
1 |
| ULVAC, Inc. | 1380 |
1 |
| Sunrise Memory Corporation | 211 |
1 |
| GLOBALFOUNDRIES Singapore Pte. Ltd. | 800 |
1 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2516 |
1 |
| Other owners | 0 |