- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Patent holdings for IPC class H10B 41/41
Total number of patents in this class: 361
10-year publication summary
|
0
|
0
|
0
|
0
|
7
|
25
|
117
|
87
|
119
|
9
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 139001 |
103 |
| SK Hynix Inc. | 10800 |
50 |
| Micron Technology, Inc. | 25824 |
47 |
| Kioxia Corporation | 10119 |
36 |
| Yangtze Memory Technologies Co., Ltd. | 2335 |
29 |
| Monolithic 3D Inc. | 299 |
26 |
| Lodestar Licensing Group LLC | 891 |
13 |
| Sandisk Technologies Inc. | 4946 |
11 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 40608 |
8 |
| Macronix International Co., Ltd. | 2556 |
7 |
| Intel NDTM US LLC | 425 |
5 |
| Semiconductor Energy Laboratory Co., Ltd. | 11101 |
3 |
| STMicroelectronics (Rousset) SAS | 942 |
2 |
| Western Digital Technologies, Inc. | 1563 |
2 |
| Besang, Inc. | 16 |
2 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1269 |
2 |
| Silicon Storage Technology, Inc. | 686 |
2 |
| Infineon Technologies LLC | 569 |
2 |
| Centre National de La Recherche Scientifique | 10102 |
1 |
| Hon Hai Precision Industry Co., Ltd. | 4043 |
1 |
| Other owners | 9 |