- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Patent holdings for IPC class H10B 41/41
Total number of patents in this class: 686
10-year publication summary
|
0
|
0
|
1
|
8
|
28
|
149
|
129
|
125
|
148
|
102
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 157719 |
250 |
| SK Hynix Inc. | 12486 |
90 |
| Micron Technology, Inc. | 27657 |
89 |
| Kioxia Corporation | 10815 |
60 |
| Yangtze Memory Technologies Co., Ltd. | 3306 |
52 |
| Monolithic 3D Inc. | 335 |
32 |
| Lodestar Licensing Group LLC | 1205 |
24 |
| Sandisk Technologies Inc. | 5438 |
19 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48302 |
12 |
| Macronix International Co., Ltd. | 2494 |
8 |
| Intel NDTM US LLC | 458 |
7 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2695 |
6 |
| Semiconductor Energy Laboratory Co., Ltd. | 11821 |
4 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1656 |
3 |
| Tokyo Electron Limited | 13807 |
2 |
| STMicroelectronics (Rousset) SAS | 961 |
2 |
| Besang, Inc. | 16 |
2 |
| Silicon Storage Technology, Inc. | 734 |
2 |
| Infineon Technologies LLC | 512 |
2 |
| Centre National de La Recherche Scientifique | 11023 |
1 |
| Other owners | 19 |