- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/70 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Patent holdings for IPC class H10B 41/70
Total number of patents in this class: 236
10-year publication summary
|
0
|
0
|
0
|
1
|
7
|
10
|
53
|
63
|
78
|
24
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Semiconductor Energy Laboratory Co., Ltd. | 11643 |
199 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46877 |
7 |
| Kioxia Corporation | 10680 |
5 |
| Samsung Electronics Co., Ltd. | 152534 |
4 |
| eMemory Technology Inc. | 402 |
4 |
| STMicroelectronics International N.V. | 3677 |
3 |
| STMicroelectronics S.r.l. | 3408 |
2 |
| Anaflash Inc. | 27 |
2 |
| Intel Corporation | 46625 |
1 |
| Micron Technology, Inc. | 27235 |
1 |
| Hon Hai Precision Industry Co., Ltd. | 4009 |
1 |
| AMIC Technology Corporation | 4 |
1 |
| Korea National University of Transportation Industry-Academic Cooperation Foundation | 227 |
1 |
| National Tsing Hua University | 1243 |
1 |
| Yield Microelectronics Corp. | 27 |
1 |
| Seoul National University R&db Foundation | 3944 |
1 |
| Chengdu Analog Circuit Technology Inc | 12 |
1 |
| Ipcell Corporation Limited | 3 |
1 |
| Other owners | 0 |