- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/23 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Patent holdings for IPC class H10B 43/23
Total number of patents in this class: 31
10-year publication summary
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0
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0
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0
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0
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2
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6
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12
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3
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4
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| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47675 |
5 |
| Samsung Electronics Co., Ltd. | 154987 |
3 |
| SK Hynix Inc. | 12237 |
3 |
| Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | 222 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11718 |
2 |
| Applied Materials, Inc. | 20135 |
2 |
| United Microelectronics Corp. | 4459 |
2 |
| Kioxia Corporation | 10724 |
2 |
| Sandisk Technologies Inc. | 5398 |
1 |
| National Institute of Advanced Industrial Science and Technology | 3790 |
1 |
| Monolithic 3D Inc. | 331 |
1 |
| ULVAC, Inc. | 1353 |
1 |
| Sunrise Memory Corporation | 215 |
1 |
| GLOBALFOUNDRIES Singapore Pte. Ltd. | 837 |
1 |
| Yangtze Memory Technologies Co., Ltd. | 3211 |
1 |
| Intel NDTM US LLC | 456 |
1 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2695 |
1 |
| Other owners | 0 |