- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Patent holdings for IPC class H10B 43/35
Total number of patents in this class: 1270
10-year publication summary
|
0
|
0
|
0
|
2
|
13
|
150
|
290
|
245
|
529
|
49
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 139302 |
249 |
| Kioxia Corporation | 10128 |
210 |
| Yangtze Memory Technologies Co., Ltd. | 2348 |
187 |
| Micron Technology, Inc. | 25845 |
148 |
| Sandisk Technologies Inc. | 4948 |
100 |
| SK Hynix Inc. | 10824 |
97 |
| Lodestar Licensing Group LLC | 896 |
48 |
| Applied Materials, Inc. | 17779 |
31 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 40644 |
26 |
| Sandisk Technologies LLC | 1456 |
22 |
| Macronix International Co., Ltd. | 2552 |
18 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2362 |
16 |
| Semiconductor Energy Laboratory Co., Ltd. | 11114 |
12 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1274 |
7 |
| Intel NDTM US LLC | 424 |
7 |
| Monolithic 3D Inc. | 300 |
6 |
| Sunrise Memory Corporation | 206 |
6 |
| Western Digital Technologies, Inc. | 1567 |
5 |
| eMemory Technology Inc. | 375 |
5 |
| Renesas Electronics Corporation | 6146 |
4 |
| Other owners | 66 |