- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 51/20
Total number of patents in this class: 692
10-year publication summary
|
0
|
0
|
0
|
1
|
25
|
117
|
144
|
188
|
181
|
26
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46813 |
311 |
| Samsung Electronics Co., Ltd. | 152304 |
115 |
| Sandisk Technologies Inc. | 5307 |
40 |
| Micron Technology, Inc. | 27221 |
32 |
| SK Hynix Inc. | 11996 |
31 |
| Kioxia Corporation | 10586 |
18 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1414 |
15 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1510 |
14 |
| Sunrise Memory Corporation | 214 |
14 |
| Semiconductor Energy Laboratory Co., Ltd. | 11631 |
10 |
| Yangtze Memory Technologies Co., Ltd. | 3083 |
10 |
| Kepler Computing Inc. | 322 |
6 |
| Korea Advanced Institute of Science and Technology | 4535 |
5 |
| Tokyo Electron Limited | 13452 |
4 |
| Sandisk Technologies LLC | 1453 |
4 |
| International Business Machines Corporation | 62049 |
3 |
| Intel Corporation | 46597 |
3 |
| Huawei Technologies Co., Ltd. | 118879 |
3 |
| Macronix International Co., Ltd. | 2523 |
3 |
| NEO Semiconductor, Inc. | 69 |
3 |
| Other owners | 48 |