- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 51/20
Total number of patents in this class: 548
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
24
|
113
|
127
|
181
|
99
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 42804 |
259 |
| Samsung Electronics Co., Ltd. | 146346 |
87 |
| Sandisk Technologies Inc. | 4809 |
28 |
| SK Hynix Inc. | 11368 |
27 |
| Micron Technology, Inc. | 26238 |
22 |
| Kioxia Corporation | 10293 |
14 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1383 |
13 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1397 |
12 |
| Sunrise Memory Corporation | 213 |
12 |
| Yangtze Memory Technologies Co., Ltd. | 2641 |
8 |
| Semiconductor Energy Laboratory Co., Ltd. | 11416 |
7 |
| Kepler Computing Inc. | 304 |
4 |
| Tokyo Electron Limited | 12733 |
3 |
| Huawei Technologies Co., Ltd. | 112690 |
3 |
| Macronix International Co., Ltd. | 2559 |
3 |
| Korea Advanced Institute of Science and Technology | 4382 |
3 |
| NEO Semiconductor, Inc. | 60 |
3 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2556 |
3 |
| International Business Machines Corporation | 61257 |
2 |
| Lam Research Corporation | 5252 |
2 |
| Other owners | 33 |