- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 51/20
Total number of patents in this class: 606
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
24
|
115
|
134
|
184
|
143
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 44282 |
289 |
| Samsung Electronics Co., Ltd. | 148173 |
95 |
| Sandisk Technologies Inc. | 4892 |
31 |
| SK Hynix Inc. | 11558 |
30 |
| Micron Technology, Inc. | 26317 |
26 |
| Kioxia Corporation | 10440 |
15 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1393 |
13 |
| Sunrise Memory Corporation | 212 |
13 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1437 |
12 |
| Semiconductor Energy Laboratory Co., Ltd. | 11485 |
9 |
| Yangtze Memory Technologies Co., Ltd. | 2831 |
9 |
| Korea Advanced Institute of Science and Technology | 4425 |
5 |
| Kepler Computing Inc. | 314 |
4 |
| Tokyo Electron Limited | 13013 |
3 |
| Huawei Technologies Co., Ltd. | 114620 |
3 |
| Macronix International Co., Ltd. | 2549 |
3 |
| NEO Semiconductor, Inc. | 68 |
3 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2619 |
3 |
| International Business Machines Corporation | 61621 |
2 |
| Lam Research Corporation | 5332 |
2 |
| Other owners | 36 |