- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 51/20
Total number of patents in this class: 785
10-year publication summary
|
0
|
0
|
0
|
1
|
25
|
119
|
158
|
193
|
181
|
93
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48861 |
330 |
| Samsung Electronics Co., Ltd. | 159029 |
142 |
| Sandisk Technologies Inc. | 5485 |
41 |
| Micron Technology, Inc. | 27793 |
39 |
| SK Hynix Inc. | 12667 |
35 |
| Kioxia Corporation | 11017 |
22 |
| Sunrise Memory Corporation | 218 |
17 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1696 |
16 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1472 |
15 |
| Yangtze Memory Technologies Co., Ltd. | 3400 |
12 |
| Semiconductor Energy Laboratory Co., Ltd. | 11896 |
11 |
| Kepler Computing Inc. | 332 |
9 |
| Tokyo Electron Limited | 13948 |
5 |
| Korea Advanced Institute of Science and Technology | 4708 |
5 |
| NEO Semiconductor, Inc. | 71 |
4 |
| International Business Machines Corporation | 62805 |
3 |
| Intel Corporation | 46292 |
3 |
| Huawei Technologies Co., Ltd. | 124837 |
3 |
| Macronix International Co., Ltd. | 2487 |
3 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11130 |
3 |
| Other owners | 67 |