- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/40 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the peripheral circuit region
Patent holdings for IPC class H10B 51/40
Total number of patents in this class: 150
10-year publication summary
|
0
|
0
|
0
|
1
|
5
|
22
|
36
|
33
|
25
|
27
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 49027 |
59 |
| Samsung Electronics Co., Ltd. | 159298 |
41 |
| Micron Technology, Inc. | 27867 |
6 |
| Kepler Computing Inc. | 332 |
6 |
| Sandisk Technologies Inc. | 5505 |
5 |
| Renesas Electronics Corporation | 5859 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11877 |
3 |
| Sunrise Memory Corporation | 218 |
3 |
| Seoul National University R&db Foundation | 4259 |
3 |
| Yangtze Memory Technologies Co., Ltd. | 3418 |
3 |
| Changxin Memory Technologies, Inc. | 4933 |
3 |
| Intel Corporation | 46313 |
2 |
| Macronix International Co., Ltd. | 2487 |
2 |
| Kioxia Corporation | 11022 |
2 |
| SK Hynix Inc. | 12717 |
1 |
| The Regents of the University of Michigan | 5051 |
1 |
| Korea Advanced Institute of Science and Technology | 4715 |
1 |
| GLOBALFOUNDRIES U.S. Inc. | 6394 |
1 |
| Industry-university Cooperation Foundation Hanyang University Erica Campus | 651 |
1 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1472 |
1 |
| Other owners | 3 |