- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Patent holdings for IPC class H10D 30/47
Total number of patents in this class: 1289
10-year publication summary
|
1
|
6
|
2
|
4
|
7
|
83
|
187
|
182
|
315
|
416
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| United Microelectronics Corp. | 4504 |
81 |
| Samsung Electronics Co., Ltd. | 158605 |
62 |
| Toshiba Corporation | 12625 |
52 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48629 |
46 |
| Intel Corporation | 47162 |
40 |
| Texas Instruments Incorporated | 19639 |
31 |
| Enkris Semiconductor, Inc. | 406 |
31 |
| Toshiba Electronic Devices & Storage Corporation | 2358 |
28 |
| Innoscience (Suzhou) Technology Co., ltd. | 171 |
25 |
| Rohm Co., Ltd. | 6885 |
24 |
| Innoscience (Suzhou) Semiconductor Co., Ltd. | 161 |
24 |
| NXP USA, Inc. | 4406 |
22 |
| Sumitomo Electric Industries, Ltd. | 16331 |
21 |
| GLOBALFOUNDRIES U.S. Inc. | 6385 |
21 |
| Panasonic Holdings Corporation | 1781 |
21 |
| Sony Semiconductor Solutions Corporation | 11764 |
20 |
| Nuvoton Technology Corporation Japan | 743 |
18 |
| Infineon Technologies Austria AG | 2351 |
17 |
| Huawei Technologies Co., Ltd. | 124379 |
17 |
| Mitsubishi Electric Corporation | 48236 |
15 |
| Other owners | 673 |