- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Patent holdings for IPC class H10D 30/47
Total number of patents in this class: 176
10-year publication summary
1
|
0
|
3
|
2
|
2
|
2
|
21
|
26
|
20
|
79
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
United Microelectronics Corp. | 4232 |
17 |
Innoscience (Suzhou) Technology Co., ltd. | 170 |
9 |
Japan Display Inc. | 7074 |
5 |
Innoscience (Suzhou) Semiconductor Co., Ltd. | 146 |
5 |
Intel Corporation | 46751 |
4 |
Enkris Semiconductor, Inc. | 379 |
4 |
The Ritsumeikan Trust | 159 |
4 |
Nuvoton Technology Corporation Japan | 582 |
4 |
Panasonic Holdings Corporation | 1711 |
4 |
Patentix Inc. | 7 |
4 |
Centre National de La Recherche Scientifique | 10350 |
3 |
Infineon Technologies Austria AG | 2137 |
3 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 42222 |
3 |
Indian Institute of Science | 314 |
3 |
National Research Council of Canada | 1548 |
3 |
Sony Semiconductor Solutions Corporation | 10315 |
3 |
National University Corporation Tokai National Higher Education and Research System | 704 |
3 |
Wolfspeed, Inc. | 694 |
3 |
Toshiba Corporation | 12300 |
2 |
Raytheon Company | 8388 |
2 |
Other owners | 88 |