- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Patent holdings for IPC class H10D 30/47
Total number of patents in this class: 335
10-year publication summary
|
0
|
0
|
1
|
0
|
1
|
1
|
35
|
57
|
42
|
148
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| United Microelectronics Corp. | 4242 |
36 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 43015 |
12 |
| Enkris Semiconductor, Inc. | 383 |
12 |
| Innoscience (Suzhou) Technology Co., ltd. | 170 |
10 |
| Toshiba Corporation | 12376 |
9 |
| Rohm Co., Ltd. | 6468 |
8 |
| Sony Semiconductor Solutions Corporation | 10529 |
7 |
| NXP USA, Inc. | 4306 |
7 |
| Innoscience (Suzhou) Semiconductor Co., Ltd. | 147 |
7 |
| Panasonic Holdings Corporation | 1746 |
7 |
| Japan Display Inc. | 6970 |
6 |
| STMicroelectronics International N.V. | 3223 |
6 |
| Intel Corporation | 47051 |
5 |
| Infineon Technologies Austria AG | 2156 |
5 |
| National Research Council of Canada | 1546 |
5 |
| Toshiba Electronic Devices & Storage Corporation | 1989 |
5 |
| Nuvoton Technology Corporation Japan | 619 |
5 |
| Wolfspeed, Inc. | 722 |
5 |
| Cree, Inc. | 992 |
4 |
| The Ritsumeikan Trust | 163 |
4 |
| Other owners | 170 |