- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Patent holdings for IPC class H10D 30/47
Total number of patents in this class: 117
10-year publication summary
|
1
|
0
|
3
|
2
|
2
|
2
|
18
|
12
|
10
|
51
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| United Microelectronics Corp. | 4203 |
9 |
| Innoscience (Suzhou) Technology Co., ltd. | 170 |
7 |
| The Ritsumeikan Trust | 159 |
4 |
| Nuvoton Technology Corporation Japan | 575 |
4 |
| Patentix Inc. | 7 |
4 |
| Centre National de La Recherche Scientifique | 10266 |
3 |
| Intel Corporation | 46643 |
3 |
| Indian Institute of Science | 314 |
3 |
| National Research Council of Canada | 1546 |
3 |
| National University Corporation Tokai National Higher Education and Research System | 697 |
3 |
| Rohm Co., Ltd. | 6412 |
2 |
| The Regents of the University of Michigan | 4654 |
2 |
| Commissariat à l'énergie atomique et aux energies alternatives | 10787 |
2 |
| DYNAX Semiconductor, Inc. | 65 |
2 |
| Enkris Semiconductor, Inc. | 366 |
2 |
| Sony Semiconductor Solutions Corporation | 10180 |
2 |
| Universite de Montpellier | 971 |
2 |
| QROMIS, Inc. | 92 |
2 |
| Agc, Inc. | 4691 |
2 |
| Innoscience (Suzhou) Semiconductor Co., Ltd. | 144 |
2 |
| Other owners | 54 |