- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/00 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Patent holdings for IPC class H10D 84/00
Total number of patents in this class: 608
10-year publication summary
|
0
|
0
|
0
|
0
|
4
|
29
|
75
|
95
|
129
|
218
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Fuji Electric Co., Ltd. | 5541 |
63 |
| Toshiba Corporation | 12732 |
44 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 49027 |
44 |
| Rohm Co., Ltd. | 6916 |
44 |
| Toshiba Electronic Devices & Storage Corporation | 2435 |
37 |
| Microchip Technology Incorporated | 3387 |
27 |
| Mitsubishi Electric Corporation | 48409 |
23 |
| Denso Corporation | 25799 |
21 |
| Infineon Technologies AG | 8429 |
11 |
| Samsung Electronics Co., Ltd. | 159298 |
10 |
| Semiconductor Energy Laboratory Co., Ltd. | 11877 |
10 |
| Minebea Power Semiconductor Device Inc. | 236 |
10 |
| Semiconductor Components Industries, L.L.C. | 5260 |
9 |
| Renesas Electronics Corporation | 5859 |
7 |
| Infineon Technologies Austria AG | 2364 |
7 |
| Murata Manufacturing Co., Ltd. | 25981 |
7 |
| Nuvoton Technology Corporation Japan | 760 |
6 |
| Pragmatic Semiconductor Limited | 120 |
6 |
| Hitachi Energy Ltd. | 2662 |
6 |
| Qualcomm Incorporated | 93712 |
5 |
| Other owners | 211 |