- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/00 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Patent holdings for IPC class H10D 84/00
Total number of patents in this class: 126
10-year publication summary
0
|
0
|
0
|
0
|
0
|
1
|
15
|
26
|
20
|
54
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Fuji Electric Co., Ltd. | 5203 |
13 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 43400 |
12 |
Toshiba Corporation | 12502 |
9 |
Rohm Co., Ltd. | 6487 |
9 |
Toshiba Electronic Devices & Storage Corporation | 2031 |
7 |
Renesas Electronics Corporation | 5987 |
4 |
Denso Corporation | 24480 |
4 |
Infineon Technologies AG | 8255 |
4 |
Semiconductor Energy Laboratory Co., Ltd. | 11481 |
3 |
Semiconductor Components Industries, L.L.C. | 5269 |
3 |
Infineon Technologies Dresden GmbH & Co. KG | 150 |
3 |
Pragmatic Semiconductor Limited | 99 |
3 |
Minebea Power Semiconductor Device Inc. | 209 |
3 |
Samsung Electronics Co., Ltd. | 147622 |
2 |
Mitsubishi Electric Corporation | 46449 |
2 |
Socionext Inc. | 1559 |
2 |
Richtek Technology Corp. | 626 |
2 |
Kioxia Corporation | 10441 |
2 |
Nuvoton Technology Corporation Japan | 640 |
2 |
Zhuzhou CRRC Times Semiconductor Co., Ltd. | 65 |
2 |
Other owners | 35 |