- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/60 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of BJTs
Patent holdings for IPC class H10D 84/60
Total number of patents in this class: 9
10-year publication summary
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0
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0
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0
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0
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0
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1
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1
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3
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0
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4
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| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Fuji Electric Co., Ltd. | 5106 |
4 |
| Mitsubishi Electric Corporation | 45811 |
2 |
| Renesas Electronics Corporation | 6041 |
1 |
| GLOBALFOUNDRIES U.S. Inc. | 6431 |
1 |
| Nexperia B.V. | 417 |
1 |
| Other owners | 0 |