- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/80 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs
Patent holdings for IPC class H10D 84/80
Total number of patents in this class: 583
10-year publication summary
|
0
|
0
|
0
|
1
|
5
|
30
|
65
|
64
|
209
|
190
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Semiconductor Energy Laboratory Co., Ltd. | 11834 |
102 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48438 |
67 |
| Fuji Electric Co., Ltd. | 5488 |
55 |
| Rohm Co., Ltd. | 6837 |
49 |
| Denso Corporation | 25579 |
18 |
| Minebea Power Semiconductor Device Inc. | 224 |
17 |
| Samsung Electronics Co., Ltd. | 157946 |
16 |
| Texas Instruments Incorporated | 19653 |
15 |
| United Microelectronics Corp. | 4496 |
15 |
| Mitsubishi Electric Corporation | 48048 |
10 |
| Microchip Technology Incorporated | 3324 |
10 |
| International Business Machines Corporation | 62671 |
8 |
| Infineon Technologies Austria AG | 2338 |
7 |
| Sony Semiconductor Solutions Corporation | 11613 |
7 |
| Nuvoton Technology Corporation Japan | 729 |
7 |
| Toshiba Corporation | 12569 |
6 |
| Psemi Corporation | 1082 |
6 |
| Intel Corporation | 47122 |
5 |
| Renesas Electronics Corporation | 5864 |
5 |
| STMicroelectronics International N.V. | 4165 |
5 |
| Other owners | 153 |