- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/80 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs
Patent holdings for IPC class H10D 84/80
Total number of patents in this class: 42
10-year publication summary
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0
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0
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0
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0
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0
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0
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3
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2
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1
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36
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| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Semiconductor Energy Laboratory Co., Ltd. | 11341 |
11 |
| Fuji Electric Co., Ltd. | 5085 |
7 |
| Rohm Co., Ltd. | 6412 |
5 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 41903 |
4 |
| Monolithic 3D Inc. | 309 |
2 |
| Sony Semiconductor Solutions Corporation | 10180 |
2 |
| Nuvoton Technology Corporation Japan | 575 |
2 |
| Denso Corporation | 24058 |
1 |
| Tokyo Electron Limited | 12452 |
1 |
| Socionext Inc. | 1553 |
1 |
| Skyworks Solutions, Inc. | 3664 |
1 |
| Psemi Corporation | 983 |
1 |
| Innoscience (Suzhou) Semiconductor Co., Ltd. | 144 |
1 |
| Hitachi Astemo, Ltd. | 6342 |
1 |
| Zhuzhou CRRC Times Semiconductor Co., Ltd. | 56 |
1 |
| Pragmatic Semiconductor Limited | 79 |
1 |
| Other owners | 0 |