- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 31/16 - Feed and outlet means for the gasesModifying the flow of the gases
Patent holdings for IPC class C30B 31/16
Total number of patents in this class: 20
10-year publication summary
1
|
2
|
1
|
0
|
2
|
0
|
2
|
2
|
3
|
0
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Taiwan Semiconductor Manufacturing Company, Ltd. | 42804 |
3 |
ASM IP Holding B.V. | 2078 |
2 |
Samsung Electronics Co., Ltd. | 146346 |
1 |
Toshiba Corporation | 12345 |
1 |
Applied Materials, Inc. | 18658 |
1 |
Okinawa Institute of Science and Technology School Corporation | 156 |
1 |
SEMCO Engineering SA | 2 |
1 |
TSMC China Company Limited | 211 |
1 |
Hpsp Co., Ltd. | 58 |
1 |
Swegan AB | 19 |
1 |
Woongjin Energy Co., Ltd. | 19 |
1 |
Taiwan Semiconductor Manufacturing Company Limited | 54 |
1 |
Holdingmij. Wilro B.V. | 1 |
1 |
Leading Edge Equipment Technologies, Inc. | 9 |
1 |
Longi Solar Technology (Ningxia) Co., Ltd. | 11 |
1 |
Wafer Works Epitaxial Corp. | 6 |
1 |
Destination 2D, Inc. | 18 |
1 |
Other owners | 0 |