- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H01L 27/11582
Total number of patents in this class: 5117
10-year publication summary
|
644
|
614
|
850
|
1130
|
1053
|
474
|
235
|
41
|
1
|
4
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 155224 |
960 |
| Kioxia Corporation | 10727 |
868 |
| Micron Technology, Inc. | 27384 |
675 |
| Sandisk Technologies Inc. | 5400 |
600 |
| Yangtze Memory Technologies Co., Ltd. | 3225 |
460 |
| SK Hynix Inc. | 12267 |
451 |
| Sandisk Technologies LLC | 1426 |
174 |
| Macronix International Co., Ltd. | 2511 |
151 |
| Applied Materials, Inc. | 20145 |
83 |
| Lodestar Licensing Group LLC | 1193 |
66 |
| Sunrise Memory Corporation | 215 |
58 |
| Tokyo Electron Limited | 13617 |
48 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47734 |
34 |
| Intel NDTM US LLC | 455 |
33 |
| Mimirip LLC | 1382 |
30 |
| Semiconductor Energy Laboratory Co., Ltd. | 11705 |
28 |
| Lam Research Corporation | 5560 |
26 |
| Toshiba Memory Corporation | 236 |
25 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1575 |
24 |
| Monolithic 3D Inc. | 331 |
18 |
| Other owners | 305 |