• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H01L 27/11582

Total number of patents in this class: 5117

10-year publication summary

644
614
850
1130
1053
474
235
41
1
4
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
155224
960
Kioxia Corporation
10727
868
Micron Technology, Inc.
27384
675
Sandisk Technologies Inc.
5400
600
Yangtze Memory Technologies Co., Ltd.
3225
460
SK Hynix Inc.
12267
451
Sandisk Technologies LLC
1426
174
Macronix International Co., Ltd.
2511
151
Applied Materials, Inc.
20145
83
Lodestar Licensing Group LLC
1193
66
Sunrise Memory Corporation
215
58
Tokyo Electron Limited
13617
48
Taiwan Semiconductor Manufacturing Company, Ltd.
47734
34
Intel NDTM US LLC
455
33
Mimirip LLC
1382
30
Semiconductor Energy Laboratory Co., Ltd.
11705
28
Lam Research Corporation
5560
26
Toshiba Memory Corporation
236
25
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1575
24
Monolithic 3D Inc.
331
18
Other owners 305