• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H01L 27/11582

Total number of patents in this class: 5072

10-year publication summary

644
614
850
1130
1052
472
204
31
1
4
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
158605
954
Kioxia Corporation
10879
858
Micron Technology, Inc.
27666
659
Sandisk Technologies Inc.
5474
599
Yangtze Memory Technologies Co., Ltd.
3375
453
SK Hynix Inc.
12611
449
Sandisk Technologies LLC
1423
174
Macronix International Co., Ltd.
2489
151
Applied Materials, Inc.
20514
82
Lodestar Licensing Group LLC
1214
66
Sunrise Memory Corporation
218
58
Tokyo Electron Limited
13884
48
Taiwan Semiconductor Manufacturing Company, Ltd.
48629
34
Intel NDTM US LLC
458
32
Mimirip LLC
1373
30
Semiconductor Energy Laboratory Co., Ltd.
11873
28
Lam Research Corporation
5676
26
Toshiba Memory Corporation
236
25
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1681
23
Monolithic 3D Inc.
339
18
Other owners 305