• All sections
  • H - Electricity
  • H10B - Electronic memory devices
  • H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H10B 41/27

Total number of patents in this class: 2287

10-year publication summary

0
0
0
0
15
167
581
468
706
359
2016 2017 2018 2019 2020 2021 2022 2023 2024 2025

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
146092
525
Micron Technology, Inc.
26262
351
SK Hynix Inc.
11336
290
Kioxia Corporation
10290
254
Yangtze Memory Technologies Co., Ltd.
2636
215
Sandisk Technologies Inc.
4802
207
Lodestar Licensing Group LLC
1010
92
Taiwan Semiconductor Manufacturing Company, Ltd.
42704
50
Macronix International Co., Ltd.
2557
40
Applied Materials, Inc.
18621
34
JPMorgan Chase Bank, N.A., AS The Agent
2516
31
Semiconductor Energy Laboratory Co., Ltd.
11403
20
Lam Research Corporation
5239
18
Sandisk Technologies LLC
1448
16
Tokyo Electron Limited
12712
12
Intel NDTM US LLC
417
12
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1392
8
Monolithic 3D Inc.
308
8
Winbond Electronics Corp.
1278
6
Intel Corporation
46962
5
Other owners 93