- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
Patent holdings for IPC class H10B 43/10
Total number of patents in this class: 1111
10-year publication summary
|
0
|
0
|
0
|
0
|
9
|
114
|
291
|
232
|
438
|
37
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 139001 |
251 |
| Kioxia Corporation | 10119 |
190 |
| SK Hynix Inc. | 10800 |
131 |
| Yangtze Memory Technologies Co., Ltd. | 2335 |
118 |
| Micron Technology, Inc. | 25824 |
104 |
| Sandisk Technologies Inc. | 4946 |
103 |
| Macronix International Co., Ltd. | 2556 |
33 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 40608 |
31 |
| Lodestar Licensing Group LLC | 891 |
31 |
| Sandisk Technologies LLC | 1455 |
17 |
| Sunrise Memory Corporation | 206 |
14 |
| Monolithic 3D Inc. | 299 |
12 |
| Applied Materials, Inc. | 17745 |
11 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2357 |
8 |
| Semiconductor Energy Laboratory Co., Ltd. | 11101 |
6 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1269 |
6 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1344 |
5 |
| Western Digital Technologies, Inc. | 1563 |
4 |
| eMemory Technology Inc. | 375 |
4 |
| NEO Semiconductor, Inc. | 59 |
3 |
| Other owners | 29 |