- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
Patent holdings for IPC class H10B 43/10
Total number of patents in this class: 1882
10-year publication summary
|
0
|
0
|
0
|
9
|
120
|
372
|
359
|
463
|
491
|
71
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 151017 |
443 |
| Kioxia Corporation | 10512 |
292 |
| SK Hynix Inc. | 11871 |
221 |
| Micron Technology, Inc. | 27174 |
213 |
| Yangtze Memory Technologies Co., Ltd. | 3035 |
196 |
| Sandisk Technologies Inc. | 5176 |
185 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46507 |
54 |
| Lodestar Licensing Group LLC | 1146 |
51 |
| Macronix International Co., Ltd. | 2529 |
45 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2656 |
25 |
| Sandisk Technologies LLC | 1455 |
23 |
| Sunrise Memory Corporation | 214 |
20 |
| Monolithic 3D Inc. | 324 |
14 |
| Applied Materials, Inc. | 19577 |
11 |
| Semiconductor Energy Laboratory Co., Ltd. | 11583 |
9 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1411 |
8 |
| Winbond Electronics Corp. | 1346 |
8 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1498 |
7 |
| NEO Semiconductor, Inc. | 69 |
5 |
| Intel Corporation | 46576 |
4 |
| Other owners | 48 |