• All sections
• H - Electricity
• H10B - Electronic memory devices
• H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H10B 43/27

Total number of patents in this class: 4362

10-year publication summary

Principal owners for this class