- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Patent holdings for IPC class H10B 43/50
Total number of patents in this class: 359
10-year publication summary
|
0
|
1
|
0
|
1
|
2
|
40
|
84
|
73
|
95
|
66
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 147003 |
76 |
| Kioxia Corporation | 10323 |
70 |
| Yangtze Memory Technologies Co., Ltd. | 2676 |
52 |
| Micron Technology, Inc. | 26251 |
43 |
| Sandisk Technologies Inc. | 4823 |
24 |
| Sandisk Technologies LLC | 1444 |
24 |
| SK Hynix Inc. | 11421 |
20 |
| Applied Materials, Inc. | 18759 |
11 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 43015 |
10 |
| Lodestar Licensing Group LLC | 1031 |
4 |
| Macronix International Co., Ltd. | 2560 |
3 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1406 |
3 |
| Longitude Flash Memory Solutions Ltd. | 271 |
3 |
| Intel NDTM US LLC | 417 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 11448 |
2 |
| Monolithic 3D Inc. | 308 |
2 |
| Tokyo Electron Limited | 12795 |
1 |
| United Microelectronics Corp. | 4242 |
1 |
| Lam Research Corporation | 5282 |
1 |
| Western Digital Technologies, Inc. | 1764 |
1 |
| Other owners | 5 |