- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Patent holdings for IPC class H10B 43/50
Total number of patents in this class: 499
10-year publication summary
|
1
|
0
|
1
|
2
|
40
|
90
|
94
|
112
|
102
|
60
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 157719 |
104 |
| Kioxia Corporation | 10815 |
82 |
| Yangtze Memory Technologies Co., Ltd. | 3306 |
79 |
| Micron Technology, Inc. | 27657 |
71 |
| Sandisk Technologies Inc. | 5438 |
42 |
| SK Hynix Inc. | 12486 |
34 |
| Sandisk Technologies LLC | 1423 |
24 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48302 |
13 |
| Applied Materials, Inc. | 20375 |
11 |
| Lodestar Licensing Group LLC | 1205 |
6 |
| Macronix International Co., Ltd. | 2494 |
5 |
| Intel NDTM US LLC | 458 |
4 |
| Semiconductor Energy Laboratory Co., Ltd. | 11821 |
3 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1656 |
3 |
| Longitude Flash Memory Solutions Ltd. | 258 |
3 |
| Monolithic 3D Inc. | 335 |
2 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2695 |
2 |
| Tokyo Electron Limited | 13807 |
1 |
| United Microelectronics Corp. | 4492 |
1 |
| Lam Research Corporation | 5635 |
1 |
| Other owners | 8 |