- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 30/43 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
Patent holdings for IPC class H10D 30/43
Total number of patents in this class: 818
10-year publication summary
|
0
|
0
|
0
|
3
|
5
|
16
|
134
|
163
|
345
|
124
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47419 |
404 |
| Samsung Electronics Co., Ltd. | 154120 |
174 |
| International Business Machines Corporation | 62251 |
74 |
| Intel Corporation | 46681 |
23 |
| Socionext Inc. | 1589 |
11 |
| IMEC VZW | 1759 |
11 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1432 |
11 |
| Applied Materials, Inc. | 20053 |
9 |
| Tokyo Electron Limited | 13553 |
8 |
| Qualcomm Incorporated | 90374 |
7 |
| IBM United Kingdom Limited | 4103 |
7 |
| Adeia Semiconductor Solutions LLC | 758 |
6 |
| SK Hynix Inc. | 12171 |
5 |
| National Taiwan University | 1304 |
5 |
| Apple Inc. | 58122 |
4 |
| National Yang Ming Chiao Tung University | 370 |
4 |
| Semiconductor Manufacturing International (Shanghai) Corporation | 1741 |
3 |
| Changxin Memory Technologies, Inc. | 4924 |
3 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11013 |
2 |
| Korea Advanced Institute of Science and Technology | 4575 |
2 |
| Other owners | 45 |