• All sections
  • H - Electricity
  • H10D - Inorganic electric semiconductor devices
  • H10D 84/40 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs

Patent holdings for IPC class H10D 84/40

Total number of patents in this class: 114

10-year publication summary

0
0
0
1
0
8
13
21
40
14
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Taiwan Semiconductor Manufacturing Company, Ltd.
47319
16
Analog Devices International Unlimited Company
2005
9
Samsung Electronics Co., Ltd.
153845
7
Rohm Co., Ltd.
6747
7
Fuji Electric Co., Ltd.
5390
7
Texas Instruments Incorporated
19631
4
GLOBALFOUNDRIES U.S. Inc.
6396
4
Intel Corporation
46680
2
Tokyo Electron Limited
13523
2
Advanced Micro Devices, Inc.
6008
2
STMicroelectronics S.r.l.
3406
2
National Taiwan University
1300
2
Monolithic 3D Inc.
330
2
Newport Fab, LLC
159
2
Siliconware Precision Industries Co., Ltd.
667
2
STMicroelectronics (Crolles 2) SAS
637
2
TSMC China Company Limited
247
2
Tokyo Electron U.S. Holdings, Inc
873
2
Analog Power Conversion LLC
30
2
Halo Microelectronics International
40
2
Other owners 34