- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/40 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
Patent holdings for IPC class H10D 84/40
Total number of patents in this class: 67
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
0
|
5
|
11
|
9
|
29
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 43854 |
7 |
| Analog Devices International Unlimited Company | 1957 |
7 |
| Samsung Electronics Co., Ltd. | 147983 |
4 |
| Rohm Co., Ltd. | 6511 |
4 |
| Fuji Electric Co., Ltd. | 5214 |
4 |
| Texas Instruments Incorporated | 19456 |
3 |
| Intel Corporation | 47239 |
2 |
| Tokyo Electron Limited | 12994 |
2 |
| Advanced Micro Devices, Inc. | 5768 |
2 |
| GLOBALFOUNDRIES U.S. Inc. | 6409 |
2 |
| TSMC China Company Limited | 229 |
2 |
| Tokyo Electron U.S. Holdings, Inc | 799 |
2 |
| Analog Power Conversion LLC | 30 |
2 |
| Qualcomm Incorporated | 86867 |
1 |
| Toshiba Corporation | 12516 |
1 |
| Micron Technology, Inc. | 26255 |
1 |
| Renesas Electronics Corporation | 5969 |
1 |
| Mitsubishi Electric Corporation | 46590 |
1 |
| STMicroelectronics S.r.l. | 3599 |
1 |
| Ideal Power Inc. | 91 |
1 |
| Other owners | 17 |