- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/40 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
Patent holdings for IPC class H10D 84/40
Total number of patents in this class: 114
10-year publication summary
|
0
|
0
|
0
|
1
|
0
|
8
|
13
|
21
|
40
|
14
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47319 |
16 |
| Analog Devices International Unlimited Company | 2005 |
9 |
| Samsung Electronics Co., Ltd. | 153845 |
7 |
| Rohm Co., Ltd. | 6747 |
7 |
| Fuji Electric Co., Ltd. | 5390 |
7 |
| Texas Instruments Incorporated | 19631 |
4 |
| GLOBALFOUNDRIES U.S. Inc. | 6396 |
4 |
| Intel Corporation | 46680 |
2 |
| Tokyo Electron Limited | 13523 |
2 |
| Advanced Micro Devices, Inc. | 6008 |
2 |
| STMicroelectronics S.r.l. | 3406 |
2 |
| National Taiwan University | 1300 |
2 |
| Monolithic 3D Inc. | 330 |
2 |
| Newport Fab, LLC | 159 |
2 |
| Siliconware Precision Industries Co., Ltd. | 667 |
2 |
| STMicroelectronics (Crolles 2) SAS | 637 |
2 |
| TSMC China Company Limited | 247 |
2 |
| Tokyo Electron U.S. Holdings, Inc | 873 |
2 |
| Analog Power Conversion LLC | 30 |
2 |
| Halo Microelectronics International | 40 |
2 |
| Other owners | 34 |