- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
Patent holdings for IPC class C30B 15/04
Total number of patents in this class: 340
10-year publication summary
|
20
|
29
|
16
|
31
|
18
|
21
|
33
|
35
|
17
|
18
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Globalwafers Co., Ltd. | 730 |
57 |
| Sumco Corporation | 1108 |
51 |
| Sumco TECHXIV Corporation | 93 |
28 |
| Siltronic AG | 433 |
23 |
| Shin-Etsu Handotai Co., Ltd. | 1306 |
18 |
| Luxium Solutions, LLC | 119 |
18 |
| Xi'an Eswin Material Technology Co., Ltd. | 102 |
12 |
| Infineon Technologies AG | 8400 |
10 |
| Corner Star Limited | 95 |
9 |
| Globalwafers Japan Co., Ltd. | 71 |
7 |
| MEMC Electronic Materials SpA | 19 |
5 |
| LONGi Green Energy Technology Co., Ltd. | 438 |
5 |
| LG Siltron Inc. | 116 |
4 |
| Tokuyama Corporation | 1474 |
4 |
| SK Siltron Co., Ltd. | 171 |
4 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11127 |
3 |
| Showa Denko K.K. | 2072 |
3 |
| GT Advanced CZ, LLC | 5 |
3 |
| GTAT IP Holding LLC | 7 |
3 |
| Hanwha Solutions Corporation | 1168 |
3 |
| Other owners | 70 |