- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/20 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 43/20
Total number of patents in this class: 486
10-year publication summary
|
1
|
0
|
1
|
8
|
31
|
80
|
115
|
126
|
109
|
17
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 10505 |
105 |
| Samsung Electronics Co., Ltd. | 150751 |
54 |
| Monolithic 3D Inc. | 321 |
54 |
| Micron Technology, Inc. | 26981 |
52 |
| Yangtze Memory Technologies Co., Ltd. | 3025 |
52 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46469 |
30 |
| SK Hynix Inc. | 11824 |
25 |
| Applied Materials, Inc. | 19531 |
17 |
| Sandisk Technologies Inc. | 5177 |
11 |
| Macronix International Co., Ltd. | 2530 |
10 |
| Sunrise Memory Corporation | 214 |
9 |
| Semiconductor Energy Laboratory Co., Ltd. | 11582 |
6 |
| Lodestar Licensing Group LLC | 1140 |
5 |
| Tokyo Electron Limited | 13324 |
4 |
| Lam Research Corporation | 5423 |
4 |
| NEO Semiconductor, Inc. | 69 |
4 |
| Winbond Electronics Corp. | 1341 |
4 |
| Chengdu PBM Technology Ltd. | 30 |
4 |
| United Microelectronics Corp. | 4360 |
2 |
| Korea Advanced Institute of Science and Technology | 4500 |
2 |
| Other owners | 32 |