- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/20 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 43/20
Total number of patents in this class: 536
10-year publication summary
|
1
|
0
|
1
|
8
|
31
|
83
|
118
|
128
|
109
|
63
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 10788 |
112 |
| Samsung Electronics Co., Ltd. | 157300 |
60 |
| Micron Technology, Inc. | 27611 |
59 |
| Yangtze Memory Technologies Co., Ltd. | 3289 |
59 |
| Monolithic 3D Inc. | 332 |
58 |
| SK Hynix Inc. | 12443 |
31 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 48214 |
30 |
| Applied Materials, Inc. | 20344 |
20 |
| Sandisk Technologies Inc. | 5427 |
13 |
| Sunrise Memory Corporation | 216 |
11 |
| Macronix International Co., Ltd. | 2501 |
10 |
| Semiconductor Energy Laboratory Co., Ltd. | 11780 |
6 |
| Lodestar Licensing Group LLC | 1201 |
5 |
| Tokyo Electron Limited | 13770 |
4 |
| Lam Research Corporation | 5615 |
4 |
| NEO Semiconductor, Inc. | 70 |
4 |
| Winbond Electronics Corp. | 1421 |
4 |
| Chengdu PBM Technology Ltd. | 35 |
4 |
| Intel NDTM US LLC | 460 |
4 |
| JPMorgan Chase Bank, N.A., AS The Agent | 2695 |
3 |
| Other owners | 35 |